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Lasing waveg DARIA KOH WOLFGANG 1 Institute of P Engesserstra 2 Institute of M Helmholtz-Pl 3 daria.kohler 4 christian.koo Abstract: Lasers that together w applications be efficient Si 3 N 4 -organ alignment. W and distribu We discuss Introdu 1. Integrated s in biophoto highly sens applications absorption i leading to living-cell microscopy approximate than at near photonic se 1100 nm, w shorter wav In this platform fo range from index contr cladding ( n and are ther low analyte efficiently f CMOS tech [8,9]. This chips for on Howeve limited to p g in Si 3 guides HLER, 1,2,3 ISABE G FREUDE, 1 AN Photonics and Q asse 5, 76131 Ka Microstructure T latz 1, 76344 Eg [email protected] os@kit.edu operate in th with photonic s. We present tly integrated nic hybrid las We investigat uted feedback the laser prop uction sensors based o onics and in b sitive detectio s, operation in in aqueous sol low-backgrou imaging usin y [5]. Specifica ely three order r-infrared (NI ensors largely which offers a velengths and s context, silico or waveguide- VIS to NIR rast between 2 SiO 1.64 n = @ refore perfectly e consumption fabricated in l hnology base, opens a path ne-time use in er, despite its passive buildin 3 N 4 - orga EL ALLEGRO, 2 ND CHRISTIAN Quantum Electr arlsruhe, Germa Technology (IM ggenstein-Leopo he visible wav integrated c a new class o on the Si 3 N 4 sers are optica te different la resonators. Th perties with a f on optical wav biomedical di on of a wide in the visible lutions allows und absorption ng waveguide ally, absorptio rs of magnitud IR) wavelengt y relies on the good compro strong water a on nitride (S -based sensors wavelengths the core ( n @ λ = 600 nm) ly suited for de n. Moreover, large quantitie and for which towards cost- point-of-care various adva ng blocks. Sil 1 anic hy 2 SENTAYEHU N KOOS 1,2,4 ronics (IPQ), Ka any MT), Karlsruhe I oldshafen, Germ velength range circuits are of laser sources 4 platform usi ally pumped aser geometrie he lasers show focus on their veguides (WG iagnostics, es e variety of t wavelength r long interacti n spectroscop e-based total on in typical aq de smaller at v ths of, e. g., 1 e so-called th omise between absorption at h Si 3 N 4 ) has em s, offering low [8-10]. Silico 3 4 Si N 2.04 n = @ or the aqueo ensely integra Si 3 N 4 -based p es using matu h a world-wid -efficient mas diagnostics. antages, the ba licon nitride P ybrid (S U FETENE WON arlsruhe Institut Institute of Tech many e and can be of particular s that emit at 6 ing low-cost f from top with es based on sp w threshold flu application in G) have an eno specially when target molecu range is of p ion lengths in r py with large internal refle queous analyte visible (VIS) w 1550 nm [6]. S herapeutic win n pronounced higher wavelen merged as a h w-loss propag on nitride WG @ λ = 600 nm ous analyte ( n ated sensor arra photonic integ ure wafer-scale de ecosystem o ss production asic Si 3 N 4 int PIC hence hav SiNOH) NDIMU, 1,2 LOT te of Technolog hnology (KIT), H easily integra r interest for 600 nm wavel fabrication tec hout the need piral shaped r uences of (40. n the field of b ormous applic n it comes to ules [1,2]. Fo particular inte refractive-inde e dynamic ran ection fluores es, such as uri wavelength of Similarly, blo ndow between d haemoglobin ngths [7]. highly attractiv gation over a G feature a lar m) and the si 2 HO 1.33 n = @ ays with smal grated circuits e processes th of photonic fo of highly fun tegration platf ve to rely eith THAR HAHN, 2 gy (KIT), Hermann-von- ated on a chip r biophotonic length and can chniques. The d of a precise ring resonators 2 ...70)µJ cm bioscience. cation potentia o multiplexed or biophotonic erest. The low ex sensors [3] nge [4], or to scence (TIRF) ine or saliva, is f, e. g., 600 nm ood analysis in n 600 nm and n absorption a ive integration wide spectra rge refractive- ilicon dioxide @ λ = 600 nm) ll footprint and s (PIC) can be hat exploit the oundries exists nctional sensor form is so far her on externa p c n e e s . al d, c w ], o F) s m n d at n al - e ), d e e s r r al

Lasing in waveguides - arXiv

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Lasing in waveguides

DARIA KOHLER

WOLFGANG

1Institute of Ph t ics Q t m Electr ics (IPQ) K rlsr e I stit te f Tec l

Engesserstrasse2Institute of Micr str ct re Tec l y

Helmholtz-Platz E e stei3daria.kohler@kit e4christian.koos@kit

Abstract: Lasers that o erate i t e isi le wa ele t ra e a ca etogether wit t ic i te rate circ itsapplications. be efficiently i te rate t e SiSi3N4-organic ri lasersalignment. Weand distribute fee ac res at rsWe discuss

Introduction1.

Integrated sens rs ase tical wa e i esin biophotonics ahighly sensiti e etecti f a wi e ariet f tar et m lec lesapplications, erati i t e isi le wa ele t ra e is f artic lar i terestabsorption in a e s s l ti sleading to living-cell ima i si wa e i emicroscopy [approximatel t ree r ers f ma it e smaller at isi le (VIS) wa ele t f ethan at nearphotonic sens rs lar el relies t e s1100 nm, whic ffers a c m r mise etwee r ce aem l i a s r ti atshorter wavele t s a str

In this co te t silic itri e (Siplatform for wa e i erange from VIS t NIR wa ele t sindex contrast etwee t e c re (cladding ( n

and are theref re erfectl s ite f r e sel i te rate se s r arra slow analyte c s m ti M re er Siefficiently fa ricate i lar e a tities si mat re waferCMOS techn l ase[8,9]. This ope s a at t war s c stchips for one

However, es ite its ari s a a ta es t elimited to passi e il i l c s Silic itri e PIC e ce a e t rel eit er e ter al

Lasing in Si3

waveguides

OHLER,1,2,3

ISABEL

OLFGANG FREUDE,1

AND

I stit te of Photonics and Qu t m Electr ics (IPQ) K rlsr e I stit te f Tec l

asse 5, 76131 Karlsr e Germ y

Microstructure Tec l y

Platz 1, 76344 Egge stei

ri k [email protected]

c risti [email protected]

Lasers that operate in the isi le wa ele t ra e a ca et et er with photonic i te rate circ itsa lications. We present a ew class f laser s rces t at emite efficiently integrated o t e Si

rganic hybrid lasersWe investigate

istributed feedback res at rse iscuss the laser propertie

Introduction

te rated sensors based on tical wa e i esi i hotonics and in bi me ical ia stics es eciall w e it c mes t m lti lei l sensitive detection f a wi e ariet f tar et m lec les

a lications, operation in t e isi le wa ele t ra e is f artic lar i teresta s r tion in aqueous soluti slea i to low-backgroun a s r ti s ectr sc wit lar e amic ra e [

cell imaging using wa e i emicr scopy [5]. Specificall a s r ti i t ical a e s a al tes s c as ri e r sali a isa r imately three orders f ma it e smaller at isi le (VIS) wa ele t f et a at near-infrared (NIR) wa ele t s f e

t ic sensors largely relies t e sm, which offers a g c m r mise etwee r ce aem l i a s r ti at

s rter wavelengths and strI this context, silicon itri e (Si

latf rm for waveguide-from VIS to NIR wa ele t s

i e contrast between the c re (

2SiO 1.64n = @ a are therefore perfectly s ite f r e sel i te rate se s r arra s

yte consumption. M re er Siefficie tly fabricated in lar e a tities si mat re waferCMOS technology base,

] This opens a path towar s c stone-time use in

H wever, despite its vari s a a ta es t elimite to passive building l c s Silic itri e PIC e ce a e t rel eit er e ter al

3N4-organic hybrid (SiNOH)

SABEL ALLEGRO,2

AND CHRISTIAN

I stit te f P t ics d Quantum Electro ics (IPQ) K rlsr e I stit te f Tec l

Karlsruhe, Germany

Micr str ct re Technology (IMT

Pl tz Eggenstein-Leopol s fe Germ y

Lasers t at erate in the visible wavele t ra e a ca et et er wit tonic integrated circ its

We resent a new class of laser s rces t at emite efficie tl i te rated on the Si3N4

r a ic rid lasers are opticall mi estigate different laser e met

istri te fee ack resonators. Theproperties with a foc s

te rate se s rs ased on optical wave i esin biomedical dia stics es eciall w e it c mes t m lti le

i l se siti e etection of a wide ariet f tar et m lec lesa licati s eration in the visible wa ele t ra e is f artic lar i teresta s r ti i a e s solutions allows lo i teracti le t s i refracti e

ac ground absorption s ectr sc wit lar e amic ra e [cell ima i using waveguide

] S ecifically, absorption i t ical a e s a al tes s c as ri e r sali a isa r imatel t ree orders of magnitude smaller at isi le (VIS) wa ele t f e

i frare (NIR) wavelengths f et ic se s rs largely relies on the s

m w ic ffers a good compromise etwee r ce aem l i a s r ti ats rter wa ele t s and strong water abs r ti at i er wa ele t s [

I t is c te t silicon nitride (Si-based sensors, fferi l w

fr m VIS t NIR wavelengths i e c trast etween the core ( n

@ λ = 600 nm) or t e a e s a al te (a are t eref re erfectly suited for densel i te rate se s r arra s

te c s mption. Moreover, Siefficie tl fa ricate in large quantities si mat re wafer

and for which ] T is e s a path towards cost-

point-of-care dia sticsH we er es ite its various advanta es t e

limite t assi e uilding blocks. Silic itri e PIC e ce a e t rel eit er e ter al

1

organic hybrid (SiNOH)

2 SENTAYEHU

HRISTIAN KOOS1,2,4

I stit te f P t ics Q t m Electronics (IPQ), Karlsr e I stit te f Tec l

K rlsr e Germany

MT), Karlsruhe Instit te f Tec l y (KIT)

Leopoldshafen, Germ y

Lasers t at erate i t e isi le wavelength range a ca et et er wit t ic i te rated circuits are of artic lar i terest f r

We rese t a ew class of laser sources t at emit4 platform usin

are ptically pumped ifferent laser geometries

. The lasers show tfocus on their

te rate se s rs ase tical waveguides (WG) a ei me ical diagnostics, especiall w e it c mes t m lti le

i l se siti e etecti f a wide variety of tar et m lec lesa licati s erati i t e isible wavelength ra e is f artic lar i terest

allows long interaction le t s i refracti eac r a s rption spectroscopy wit lar e amic ra e [

cell ima i si wa e uide-based total inter al reflecti] S ecificall a s rption in typical aque s a al tes s c as ri e r sali a is

a r imatel t ree r ers f ma nitude smaller at visi le (VIS) wa ele t f ei frare (NIR) wa elengths of, e. g., 15

t ic se s rs lar el relies n the so-called thera e tic wi w etweem w ic ffers a c mpromise between r ce aem l i a s r ti at

water absorption at hig er wa ele t s [I t is c te t silic itri e (Si3N4) has emer e as a i l attracti e i te rati

ase sensors, offering low [8-10]. Silicon itri e WG feat re a lar e refracti e

3 4Si N 2.04n = @nm) or the aqueous a al te (

a are t eref re erfectl s ite for densely integrate se s r arra ste c s m ti M re ver, Si3N4-based ph t ic i te rate circ its (PIC) ca e

efficie tl fa ricate i lar e antities using mature waferf r which a world-wide ec s stem f t ic f ries

-efficient mass r cti f i l f cti al se s rcare diagnostics.

H we er es ite its ari s advantages, the basic Silimite t assi e il i l c s. Silicon nitride PIC e ce a e t rel eit er e ter al

organic hybrid (SiNOH)

ENTAYEHU FETENE WONDIMU

I stit te f P t ics Q t m Electr ics (IPQ) Karlsruhe Institute f Tec l

) K rlsr he Institute of Techn l y (KIT)

Le l s fe Germany

Lasers t at erate i t e isi le wa ele t range and can be are of particular i terest f r

We rese t a ew class f laser s urces that emit at 60using low-cost fa ricati

from top withries based on spiral s a e ri res at rs

show threshold flue ces ftheir application in

(WG) have an enormi me ical ia stics, especially when it c mes t m lti le

i l se siti e etecti f a wi e ariet of target moleculesa licati s erati i t e isi le wa ele gth range is of partic lar i terest

all ws l i teraction lengths in refracti eac r a s r ti s ectr scopy with large d amic ra e [

ase total internal reflecti] S ecificall a s r ti i t ical aqueous analytes s c as ri e r sali a is

a r imatel t ree r ers f ma it e smaller at visible (VIS) wa ele t f eg., 1550 nm [6]. Similarl l a al sis i

called therapeutic wind w etweem w ic ffers a c m r mise etween pronounced haem l i a s r ti at

water a s r ti at higher wavelengt s [) as emerged as a hig l attracti e i te rati

ase se s rs fferi g low-loss propagati er a wi e s ectral] Silicon nitride WG feat re a lar e refracti e

@ λ = 600 nm) a t e silic i i em) r t e aqueous analyte ( n

a are t eref re erfectl s ite f r e sel i tegrated sensor arraysased photonic integrate circ its (PIC) ca e

efficie tl fa ricate i lar e a tities si mature wafer-scale r cesses t at e l it t ewide ecosystem of t ic f ries

efficie t mass production of i l f cti al se s r basic Si3N4 inte rati latf rm is

limite t assi e il i l c s Silic itride PIC hence have t rel eit er e ter al

organic hybrid (SiNOH)

ONDIMU,1,2

LOTHAR

I stit te f P t ics Q t m Electr ics (IPQ) K rlsr e I stitute of Technology (KIT)

) K rlsr e I stit te f Technology (KIT), Herm

Lasers t at erate i t e isi le wa ele t ra e a ca be easily integrate a c iare f articular interest for

at 600 nm wavele t a cafabrication tech i es

fr m t without the need fase on spiral shaped rin res at rses ld fluences of (40... )µJ cm

in the field of bioscie ce

enormous applicatii me ical ia stics es eciall when it comes to m lti le

i l se siti e etecti f a wi e ariet f tar et molecules [1,2]. For i t ica licati s erati i t e isi le wa ele t ra e is of particular interest

all ws l i teracti le t s in refractive-index se s rs [ac r a s r ti s ectr sc wit large dynamic range [

ase t tal i ter al reflection fluoresce ce] S ecificall a s r ti i t ical a e s a alytes, such as urine r sali a is

a r imatel t ree r ers f ma it e smaller at isi le (VIS) wavelength of, e]. Similarly, blood a al sis i

calle t era e tic window between m w ic ffers a c m r mise etwee r nced haemoglobin a s r ti at

water a s r ti at i er wavelengths [7]. ) as emer e as a highly attractive i te rati

l ss ropagation over a wi e s ectral] Silic itri e WG feature a large refracti e

nm) and the silic i i e

2H O 1.33n = @ a are t eref re erfectl s ite f r e sel i te rate se s r arrays with small f t ri t a

ase t ic integrated circuits (PIC) ca escale processes that e l it t e

wi e ec s stem of photonic fou riesefficie t mass r ction of highly functi al se s r

integration platform islimite t assi e il i l c s Silic itri e PIC e ce have to rely either e ter al

OTHAR HAHN,2

ogy (KIT),

Hermann-von-

i tegrated on a chip are f artic lar i terest for biophotonic

m wavelength and can techniques. The

t t e need of a precisease s iral s a ed ring resonators

2(40...70)µJ cmbioscience.

application potential i me ical ia stics es eciall w e it c mes to multiplexed,

For biophotonic a licati s erati i t e isi le wa ele t ra e is f artic lar interest. The low

index sensors [3], ac r a s r ti s ectr sc wit lar e amic range [4], or to

fl orescence (TIRF) ] S ecificall a s r ti i t ical a e s a al tes s c as urine or saliva, is

a r imatel t ree r ers f ma it e smaller at isi le (VIS) wa ele th of, e. g., 600 nm ] Similarl , blood analysis in

calle t era e tic wi w etween 600 nm and m w ic ffers a c m r mise etwee r ce aem lobin absorption at

) as emer e as a i l attractive integration l ss r a ati er a wide spectral

] Silic itri e WG feat re a large refractive-m) a the silicon dioxide

@ λ = 600 nm)small footprint and

ase t ic i te rate circuits (PIC) can be scale r cesses that exploit the

wi e ec s stem f t ic foundries exists efficie t mass r cti f i l functional sensor

i te rati platform is so far limite t assi e il i l c s Silic itri e PIC e ce a e t rel either on external

i te rate a chip i tonic

m wa ele t a d can The

recise ase s iral s a e ri res ators

2( )µJ cm .

tential ed,

F r i tonic low

], to

(TIRF) ] S ecificall a s r ti i t ical a e s a al tes s c as ri e r saliva, is

nm ] Similarl l a al sis in

m and m w ic ffers a c m r mise etwee r ce aem l i a s r tion at

) as emer e as a i l attracti e i te ration l ss r a ati er a wi e s ectral

-m) a t e silic ioxide

nm), small f t ri t and

ase t ic i te rate circ its (PIC) can be scale r cesses t at e l it the

exists efficie t mass r cti f i l f cti al sensor

so far limite t assi e il i l c s Silic itri e PIC e ce a e t rel eit er e ternal

Page 2: Lasing in waveguides - arXiv

light sources t at are c le t t e c i [materials in c m i ati witrequires delicate fi ertolerances, a t e ass ciate c m le it is r i iti e f r l wMoreover, grati c lers w ic are t e mai sta f r fi erphotonics, suffer fr mleads to low rati stre t r irecti alit a l w c li efficie cies [challenges ca e erc mesources on the SiSi3N4 WG c res a c tai li tquantum dots [such as materialtechniques are t c m ati le wit c stbased process w r fl ws w ic w l e ma at r f r is sa le i t

In this paper we em strate a ew class f laser s rces t at ca e efficie tl i te rateon the Si3Nlithographic str ct riand dye-dope r a ic cla i materialslaser or a lightand without a mec a ical c tact t t e c iefficiently de site t e wafer s i c atiAn appropriate(SiNOH) lasers wit ari s emissi wa ele t s acr ss t e VIS a NIR s ectral ra esIn our work we e el a t e retical m el f SiNOH lasersresonators alasing in both str ct relasers on the In combinati wit sim le cameradisposable se s r c i s f r i l m lti le e etecti f a wi e ra e f a al tes i i tof-care diagn stics

Si3N4-organic hybrid device concept and2.

The basic co ce t f SiSiNOH lasers are ticall m e fr m t wit a e ter al li t s rce seehigh-precisio ali mea Si3N4 singleillustrated as outputs, light is ra iateconcept allows c tactkeeping the c m le it f t e c i l w

2.1 Device con ept

The SiNOH WG a e a Siis provided a r a ic t cla i t at is e wit a li tappropriate c ice f t e ai me i m a f t e e ice esi ari s emissiwavelengths

source. Note t at similar c ce ts f rdemonstrated t e silic latf rm [resonator types: A s iralstructure, Fig

li t s urces that are couple t t e c i [in combination wit

re ires delicate fiber-chi c li sc emes tt lera ces, and the associate c m le it is r i iti e f r l wM re ver, grating couplers w ic are t e mai sta f r fi er

t ics, suffer from low refracti elea s to low grating strengt r irecti alit a l w c li efficie cies [c alle ges can be overcomes rces on the Si3N4 platform c m rise ri a is res at rs t at are erticall c le t

WG cores and co tai li tt m dots [19]. Howe er t ese a r ac es re ire c m le ma fact ri r cesses

s c as material depositiontec i ues are not compati le wit c stase rocess workflows, w ic w l e ma at r f r is sa le i t

I this paper we demonstrate a ew class f laser s rces t at ca e efficie tl i te rate3N4 platform

lit raphic structuring. The e icesdoped organic cla i materials

laser r a light-emitting dio e (a without any mechanical c tact t t e c iefficie tly deposited on the wafer s i c ati

propriate choice of laser es all wslasers with vario s emissi wa ele t s acr ss t e VIS a NIR s ectral ra es

I r work, we develop a t e retical m el f SiNOH lasersres ators and for distributelasi in both structure typelasers n the Si3N4 platform t at e l itI c mbination with simple camerais sable sensor chips for i l m lti le e etecti f a wi e ra e f a al tes i i t

care diagnostics.

organic hybrid device concept and

asic concept of Si3

SiNOH lasers are optically m e fr m t wit a e ter al li t s rce seerecision alignment of t e m s t is t re ire Laser li t is emitte irectl i t

single-mode WG a ca e efficie tl c le till strated as a laser array

, light is radiated c ce t allows contact-less e citati aee i g the complexity of t e c i l w

Device concept

SiNOH WG have a Siis r ided by an organic t cla i t at is e wit a li ta r riate choice of the ai me i m a f t e e ice esi ari s emissiwa elengths 1...nλ can be realize t e same c i te tiall m e wit t e same li t

s rce Note that similar co ce ts f rem strated on the silic latf rm [

res ator types: A spiralFig 1(c). The rin res at r is c ile i t a l s iral a c les e a esce tl

li t s rces t at are coupled to the chip [i c m i ation with passive Si

chip coupling sc emes tt lera ces a t e associated complexit is r i iti e f r l wM re er rati couplers, which are t e mai sta f r fi er

low refractive-inlea s t l w rati strength, poor directi alit a l w c li efficie cies [c alle es ca e ercome by on-chip li t s rces Pre i s em strati s

platform comprise ri a is res at rs t at are erticall c le tWG c res and contain light-

owever, these ap r ac es re ire c m le ma fact ri r cessese osition from the gas ase a

tec i es are t compatible with costase r cess w r flows, which would be ma at r f r is sa le i t

I t is a er we demonstrate a new class f laser s rces t at ca e efficie tl i te ratelatform using low-cost

. The devices coe r anic cladding materials

emitting diode (LED) wit t aa wit t a mechanical contact to t e c iefficie tl e site on the wafer by spi c ati

c ice of laser dyes all wslasers wit various emission wa ele t s acr ss t e VIS a NIR s ectral ra es

I r w r we evelop a theoretical m el f SiNOH lasersistributed-feedback (DFB)

types. To the best f r wle e t is is t e first em strati flatform that exploit

I c m i ati wit simple camera reais sa le se s r c ips for highly multiple e etecti f a wi e ra e f a al tes i i t

organic hybrid device concept and

3N4-organic hybri (SiNOH) lasers [SiNOH lasers are ptically pumped from t wit a e ter al li t s rce see

t of the pump sp t is t re ire Laser li t is emitte irectl i tm e WG and can be efficie tl c le t

a laser array feeding an arra fli t is ra iated into free space ia rati c lers a ca t re a

less excitation aee i t e c m le ity of the chip low.

SiNOH WG a e a Si3N4 core on t f a silic i i e tt m cla i O tical aiis r i e a organic top claddin t at is e wit a li ta r riate c ice of the gain medi m a f t e e ice esi ari s emissi

can be realized on the same c i te tiall m e wit t e same li t

s rce N te t at similar concepts for onem strate t e silicon platform [

res at r t es: A spiral-shaped ring res at r(c) The ring resonator is c ile i t a l s iral a c les e a esce tl

2

li t s rces t at are c le t t e chip [3,11,12], or assive Si3N4 WG [13

c i c pling schemes that are s ject t stri e t mec a icalt lera ces a t e ass ciate c mplexity is prohibiti e f r l wM re er rati c lers w ich are the mainsta f r fi er

index contrast w e realize t e Silea s t l w rati stre t r directionality, and l w c li efficie cies [

chip light sources. Pre i s em strati slatf rm c mprise ring and disk res at rs t at are erticall c le t

-emitting perovs ite materials [we er t ese approaches require c m le ma fact ri r cesses

fr m the gas phase and subse e ttec i es are t c m ati le with cost-efficient mase r cess w r fl ws w ic would be mandatory f r is sa le i t

I t is a er we em strate a new class of laser s rces t at ca e efficie tl i te ratecost fabricationcombine in a hy ri

e r a ic cla i materials, which ca e ticall m e a e ter alLED) without any high

a wit t a mec a ical c tact to the chip. The eefficie tl e site t e wafer by spin coating, by

c ice f laser dyes allows the lasers wit ari s emission wavelengths acr ss t e VIS a NIR s ectral ra es

I r w r we e el a t eoretical model of SiNOH lasersfee back (DFB) resonat rs

s T the best of our knowle e t is is t e first em strati flatf rm t at exploits light emissi i acti e r a ic cla

read-out schemes r c ce tis sa le se s r c i s f r i l multiplexed detecti f a wi e ra e f a al tes i i t

organic hybrid device concept and

r a ic hybrid (SiNOH) lasers [SiNOH lasers are ticall m ed from top with a e ter al li t s rce see

t f t e mp spot is not require Laser li t is emitte irectl i tm e WG a can be efficiently c le t

fee i an array of Macht free space via grating c lers a ca t re a

less e citation and the read t f lar eee i t e c m le it f t e c i low.

c re on top of a silicon i i e tt m cla i O tical aiis r i e a r a ic t cladding that is do e wit a li ta r riate c ice f t e ai medium and of t e e ice esi ari s emissi

ca e realize on the same chip, te tiall m e wit t e same li t

s rce N te t at similar c ce ts for on-chip lasers emitti i t e NIR a e ee re i slem strate t e silic latform [21]. In our e erime ts we i esti ate tw laser

s a e ring resonator, Fig(c) T e ri res ator is coiled up into a l s iral a c les e a esce tl

], or on a hybrid inte rati f li t13-15]. Light su liehat are subject t stri e t mec a ical

t lera ces a t e ass ciate c m le it is prohibitive for lowM re er rati c lers w ic are t e mainstay for fiber

e c trast when realized o t e Silea s t l w rati stre t r irecti ality, and low couplin efficie cies [

c i li t s urces. Previous dem strati slatf rm c m rise ri a d disk resonators that are erticall c le t

emitti perovskite materials [we er t ese a r ac es require complex ma fact ri r cesses

subsequent litho ra ic str ct riefficient mass production t r sta ar CMOS

ase r cess w r fl ws w ic w l e ma atory for disposable i tI t is a er we em strate a ew class f laser sources that ca e efficie tl i te rate

fa rication techniquesa hybrid way nano t ic Si

w ich can be opticall m e a e ter alhigh-precision ali me t f

The dye-doped r a ic cla i ca eby local dispensi

the co-integration flasers wit ari s emissi wa ele gths across the VIS a NIR s ectral ra es

I r w r we e el a t e retical m el of SiNOH lasersresonators and we ex erime tall em strate

s T t e est f r knowledge, this is t e first em strati fli t emission in active or a ic cla

t schemes, our conce tis sa le se s r c i s f r i l m lti le e detection of a wide ra e f a al tes i i t

design considerations

r a ic ri (SiNOH) lasers [20] is ill strateSiNOH lasers are ticall m e fr m t with an external lig t s rce see

t f t e m s t is t required. Laser lig t is emitte irectl i tm e WG a ca e efficiently coupled to

Mach-Zehnder interfer meters At t e se s rt free s ace ia rating couplers and ca t re a

readout of large

c re t f a silicon dioxide bott m cla i O tical aiis r i e a r a ic t cla i t at is doped with a li ta r riate c ice f t e ai me i m a d of the device desi ari s emissi

ca e realize t e same chip, potentially pum e wit t e same li t

c i lasers emitting in the NIR a e ee re i sl] I our experiments, we i esti ate tw laser

Fig 1(b), and a distri te(c) T e ri res at r is c ile up into a long spiral a c les e a esce tl

brid integration of li tsupplied by exter al s rces

at are subject to stringent mec a icalt lera ces a t e ass ciate c m le it is r i iti e for low-cost disposa le se s rsM re er rati c lers w ic are t e mai sta f r fiber-chip couplin i silic

e c trast w e realized on the Si3N4 lea s t l w rati stre t r irecti alit a l w coupling efficiencies [

c i li t s rces Pre i s demonstrations olatf rm c m rise ri a is res ators that are verticall c le t

emitti er s ite materials [17,18] or C S/C Sewe er t ese a r ac es re ire c mplex manufacturin r cesses

lithographic struct riass r uction through standar CMOS

ase r cess w r fl ws w ic w l e ma at r f r is osable point-of-care se s rsI t is a er we em strate a ew class f laser s rces that can be efficientl i te rate

tec iques and do not re ire ananophotonic Si

w ic ca e ptically pumped by a e ter alrecision alignment of the

doped organic clad i ca el cal ispensing, or by inkjet ri ti

i te ration of Si3N4-orga ic rilasers wit ari s emissi wa ele t s acr ss t e VIS and NIR spectral ra es

I r w r we e el a t e retical m el f SiNOH lasers for spirala we experimentally em strate

s T t e est f r wle e this is the first dem strati fli t emissi i active organic claddin materials

t sc emes r concept shows a ro teis sa le se s r c i s f r i l m lti le e etecti f a wide range of analytes i i t

design considerations

] is illustrated SiNOH lasers are ticall m e fr m t wit a e ternal light source, see

t f t e m s t is t re ire Laser light is emitted irectl i tm e WG a ca e efficie tl c le to a subsequent se s r

Ze er interferometers. At t e se s rt free s ace ia rati c lers and captured by a

rea t f large-scale sensor arra s w ile

c re t f a silic i i e bottom cladding. O tical aiis r i e a r a ic t cla i t at is e with a light-emitting ea r riate c ice f t e ai me i m a f t e evice design, vario s emissi

ca e realize t e same c i te tially pumped with the same li t

c i lasers emitti in the NIR have bee re i sl] I r e eriments, we investigate tw laser

( ) a d a distributed-feed ac (DFB)(c) T e ri res at r is c ile i t a l spiral and couples e a esce tl

ri i te rati n of light-emitting y external sources

at are s ject t stringent mechanical c st isposable sensors.

c i coupling in silicon platform. This

lea s t l w rati stre t r irecti alit a l w c li efficiencies [16]. These c i li t s rces Pre i s em strations of visible-light

latf rm c m rise ri a is res at rs t at are ertically coupled to] or CdS/CdSe

we er t ese a r ac es re ire c m le ma facturing processeslit ra ic structuring. These

ass r cti t r h standard CMOS-care sensors.

I t is a er we em strate a ew class f laser s rces t at ca e efficiently integrated not require any

a t ic Si3N4 WG coresw ic ca e ticall m ed by an external

the pump spote r a ic cladding can be

inkjet printing. organic hybrid

lasers wit ari s emissi wa ele t s acr ss t e VIS a NIR spectral ranges. spiral-shaped ring

a we e erimentally demonstrate s T t e est f r wle e t is is t e first demonstration of

ding materials. s ws a route towards

is sa le se s r c i s f r i l m lti le e etecti f a wi e ra e f analytes in point-

] is ill strated in Fig 1. The SiNOH lasers are ticall m e fr m t wit a e ter al li t s rce, see Fig 1(a). A

t f t e m s t is t re ire Laser li t is emitted directly intos se uent sensor, here

Ze er i terfer meters. At the sensort free s ace ia rati c lers a ca t re by a camera. This

scale sensor arrays while

c re t f a silic i i e tt m cla ding. Optical gain emitting dye. By an

a r riate c ice f t e ai me i m a f t e e ice esi various emission ca e realize t e same c i te tiall m e with the same light

c i lasers emitti i t e NIR ave been previously ] I r e erime ts we i estigate two laser

feedback (DFB) (c) T e ri res at r is c ile i t a l s iral a c uples evanescently

emitting e ter al s urces

at are s ject t stri e t mec anical c st is sa le se sors.

c i c li i silicon latf rm. This

] These light

latf rm c m rise ri a is res at rs t at are erticall c led to ] r C S/CdSe

we er t ese a r ac es re ire c m le ma fact ri r cesses, These

-

I t is a er we em strate a ew class f laser s rces t at ca e efficie tl i te rated t re ire any

cores w ic ca e ticall m e a e ternal

m spot, e r a ic cla i can be

i jet rinting. r a ic ybrid

lasers wit ari s emissi wa ele t s acr ss t e VIS a NIR s ectral ranges. s a e ring

a we e erime tall em strate s T t e est f r wle e t is is t e first em stration of

i materials. t wards

-

. The . A

t f t e m s t is t re ire Laser li t is emitte irectl into here

Ze er i terfer meters At t e sensor This

scale se s r arra s while

c re t f a silic i i e tt m cla i O tical gain By an

a r riate c ice f t e ai me i m a f t e e ice esi ari s emission ca e realize t e same c i te tiall m e wit t e same light

c i lasers emitti i t e NIR a e ee re iously ] I r e erime ts we i esti ate tw laser

fee ac (DFB) (c) T e ri res at r is c ile i t a l s iral a c les e a escently

Page 3: Lasing in waveguides - arXiv

3

to a single-mode output WG, Fig 1(b). Compared to the DFB laser, the spiral covers a much larger chip area, and hence provides a large overlap with a moderately focused pump beam that leads to relaxed alignment tolerances. The distributed-feedback resonator is formed by a straight strip WG with sidewall corrugations, Fig 1(c). The footprint of the DFB laser resonator is small; therefore many SiNOH lasers can be pumped simultaneously with one pump beam. The DFB structure supports lasing in basically two longitudinal modes spectrally located at both sides of the Bragg wavelength. Asymmetries or a quarter-wavelength defect reduces the number of lasing modes to one. Pump efficiency, threshold and spectral properties depend strongly on the modal gain and on the loss of the respective laser types. This is discussed in the next subsections.

2.2 Gain and loss in SiNOH WG

The power of the oscillating laser mode depends on the SiNOH WG loss and on the efficiency with which the pump is coupled to the active WG region. Assuming effective propagating properties, the waves experience a net power gain of ( )exp 2G g Lα= − for one round-trip of length 2L in the resonator. In the case of a ring resonator, 2L denotes the ring perimeter, while for the case of a DFB laser L represents the geometrical resonator

Fig. 1. Basic concept of integrated Si3N4-organic hybrid (SiNOH) lasers. (a) SiNOH lasers feeding an array of waveguide-based sensors. The lasers are optically pumped from top by an external light source with an extended spot, without any need for high-precision mechanical alignment. Laser light is emitted directly into the Si3N4 single-mode WG and can hence be efficiently coupled to an array of on-chip sensors, here illustrated as Mach-Zehnder interferometers. The light from the sensor output is coupled out via grating couplers and captured by a camera. (b) SiNOH laser with spiral-shaped resonator. The WG consists of a Si3N4 core with a dye-doped organic cladding as a gain medium. An appropriate resonator design in combination with a suitable gain medium allows to realize various emission wavelengths λ1…n on the same chip. The ring resonator is coiled up into a spiral and couples evanescently to a single-mode output WG. (c) SiNOH laser with distributed-feedback resonator, formed by a strip WG with sidewall corrugations.

Page 4: Lasing in waveguides - arXiv

4

length. The modal power gain and loss coefficients are denoted by g and α , respectively (unit 1cm− ). When lasing, the power gain is 1G = , i. e. g α= .

The gain of the laser resonator results from the interaction of the evenanescent parts of the WG mode with the dye molecules in the organic top cladding, which are excited by the pump light. The simulated electric field magnitudes | |E

r of the quasi-TE and quasi-TM modes in

the cross-section of a strip WG are shown in Fig. 2(a) and (b), respectively.

Gain and loss in ring resonators Loss of the laser mode is caused by attenuation of the mode when propagating along the ring, and by the power output coupling

2rκ to the bus

WG [23]. The net roundtrip power gain and the net modal gain at threshold is therefore

( ) ( ) ( ) ( )2 22

r re 1 1, 2 ln 1g LG g L

α ακ κ−= − = − −= − . (1)

Gain and loss in DFB resonators The resonator mode can be described by two counter-propagating waves. The grating couples these fields with a coupling factor κ . This coupling factor is real, because the penetration depth of the evanescent field follows the grating closely so that the amplifying volume remains virtually constant along the grating, Fig. 2(d),(e). For low gain, ( )1

2g α− «κ , the first order resonances of a DFB laser are at the stopband edges,

Fig. 2. Coiled-up Si3N4 ring resonator (spiral resonator) and Si3N4 DFB resonator on a SiO2 substrate. The WG cores are clad with an organic material. Simulated electric field magnitudes ����� and spectral transmission of the laser resonator. Field propagation is along the z-axis. (a), (b) Spiral resonator. Cross-section of strip WG with width w and height h. Fundamental quasi-TE mode (a), and fundamental quasi-TM mode (b). (d), (e) DFB resonator: Top view of corrugated strip WG with width w, height h, corrugation period a, and corrugation depth d. The fundamental quasi-TE mode fields are plotted for y = const. at half the WG height. Upper band edge with larger photon energy and short-wavelength resonance λup (d), lower band edge with smaller photon energy and long-wavelength resonance λlo (e). (c) Spiral resonator: Schematic power transmission between the input and the output of the straight bus WG (black solid line) as a function of the vacuum wavelength λ. Lasing occurs at the resonances (red dashed line) marked by notches in the transmission. (f) DFB resonator: Schematic power transmission between the input and the output of the corrugated section (black solid line) as a function of the vacuum wavelength λ. Lasing occurs at the resonances closest to the Bragg wavelength λB (red dashed lines).

Page 5: Lasing in waveguides - arXiv

5

and the net modal threshold power gain can be approximated by [22, Eq. (29), (6)]

( )2

2gL

Lπ

ακ − =

. (2)

2.3 Design considerations

For lasers operated in sensor applications, the important characteristics are the spectrum, the polarization, the threshold and the output power. These parameters are defined by the resonator, the properties of the laser gain medium, and the pump.

Spectrum and polarization The organic gain medium is dominantly inhomogeneously broadened. If there is no longitudinal mode filtering, the laser emission wavelengths are determined by the spectral dependence of the laser dye emission as depicted in Fig. 3(d), red curve.

With a ring-shaped laser resonator, the emission spectrum of the organic laser dye is longitudinally filtered according to the comb-shaped transmission spectrum with a free spectral wavelength range 2

0 egFSR ( )n Lλ= centered at the operating wavelength 0λ , Fig. 2(c). In addition to the fundamental TE and TM mode, Fig. 2(a)(b), transverse modes of higher order can propagate in wider WG ( 400 nmw ≥ ). For the ring resonator we find one set of longitudinal modes for each transverse mode in each polarization. The amount of lasing modes can be reduced with additional filters.

For a DFB grating with period a , the refractive index modulation along the waveguide can be described by an effective index modulation ( )e av Bsin(2 )n z n n zβ∆= + , an amplitude

n∆ , and an average effective refractive index avn . The propagation constant is

B Bπ2 avnβ λ= at the Bragg wavelength vB a2 anλ = . The coupling strength of the grating for weak coupling is given by [22]

B

nπκ

λ∆

= . (3)

The transmission spectrum of a DFB structure and its associated stopband can be seen in Fig. 2(f), black line. The transmission bandgap is centered at the Bragg wavelength

vB a2 anλ = . For a grating with length L ma= , m is the amount of grating periods. The

bandwidth λ∆ of the stopband for a first order Bragg grating is given by [22]

av

2 22B

2

π

πn L

λλ κ +∆ = . (4)

In a DFB grating, laser emission does not occur at Bλ in the center of the stopband. However, two first-order longitudinal resonant modes are located at the stopband edges, Fig. 2(f), red dashed line, and lead to laser oscillation. If a quarter-wavelength shift is included in the center of the Bragg grating, i. e., if a defect is introduced in the periodic structure, laser emission occurs only at the Bragg wavelength, where the resonator loss is minimum.

As with the ring resonator, we find one set of longitudinal modes for each transverse mode in each polarization.

Laser threshold and output power The estimation for the net modal threshold power gain, Eq. (1),(2), holds for laser modes in inhomogeneously broadened gain media, as longitudinal modes do not compete for gain. The organic gain medium emission is inhomogeneously broadened, while in a sufficiently small wavelength range the transitions are homogeneously broadened. Within that range all longitudinal modes compete for gain and finally the mode with the largest net gain oscillates. The more modes are competing, the higher the threshold for the dominant mode becomes. The two lasing modes of DFB lasers without quarter-

Page 6: Lasing in waveguides - arXiv

wavelength s iftresonators wit lar e iameterslongitudinal m esfilter reducereduces the p m t res l

TE and TM larize m es a e a lar e s atial erla iFig. 2(a),(b). T eref rcompete for gai

A high power. For hi er mlifetime of the SiNOH laser is re ceinduced and s ta e s emissi )the total num er f m es i si e t e li ewi t f t e s ta e s emissi a t eref rethe volume f t e m e re i

1 1P Rτ τ τ− − −= +

compared tothen given by

Low propagati l sshigh quantumoptimized for e tracti t e ma im m wer fr m t e res at ra small number f m esthan a large

DFB lasers a e a small f t ri tthe pump spotdecreases wit l er WGefficient pum i f t e r a ic ai material a lea s tinternal laser wer isthe outcoupli m st e timize f r t e ma im m t t wer i eac case

Fabrication3.

The SiNOH laserare structured iwhich is mec a icall s rte a silic wafer T e etc masstructured bySF6 and CHFplasma etchin800 nm thick PMMA la eracts as the acti e cla iGmbH). For c aracterizati t e c i sthe facet of the s WG

Figure 3WG cores of a s iral laserwith a minimalof a strip WG wit si ewallcore embedde i t e e

wa elength shift are separatewith large diameters

l it dinal modes exist r reduces the number f l it i al m es i si e t e m e e s li ewi t a

the pump thresholdTE and TM polarized m es a e a lar e s atial erla i

(a),(b). Therefore c m ete for gain so that the t res l i creases i t ese cases

differential qua t m efficie cFor higher pump powers t e r a ic laser es are e ra i faster

lifetime of the SiNOH laser is re cei ced and spontaneous emissi )t e t tal number of modes i si e t e li ewi t f t e s ta e s emissi a t eref ret e lume of the pum e re i

1 1ατ τ τ− − −= + , including res a

c m ared to the lifetime iven by

L w ropagation loss αuantum efficiency

timized for extracting the ma im m wer fr m t e res at ra small number of modes

a larger active volumeFB lasers have a small f t ri t

t e mp spot so that the t resecreases with longer WG.

t pumping of the or a ic ai material a lea s ti ter al laser power is unif rmlt e tcoupling must be optimize f r t e ma im m t t wer i eac case

Fabrication

T e SiNOH laser waveguidestructured in a 200 nm t ic Si

mechanically su rte a silic wafer T e etc masby electron beam lit ra a s ra e el i Dr etc i wit a mi t re f

a d CHF3 is used to tra sfer t e strlasma etching step follow

m thick PMMA layeracts as the active cladding

For characterizati t e c i st e facet of the bus WG.

Fi ure 3(a) shows a sca i electr micr sc (SEM) ima e f tof a spiral laser

minimal curvature ra i sf a strip WG with sidewall

embedded in the dye

are separated sufficientlwit lar e diameters have a small FSR

exist with consequentlumber of longitudi al m es i si e t e m e e s li ewi t a

t e m t reshold. TE a TM larized modes have a lar e s atial erla i

laser modes wit similar fre e cies t iffere t larizati ss that the threshold increases i t ese cases

quantum efficie cpowers the orga ic laser es are e ra i faster

lifetime f t e SiNOH laser is reducedi ce a s ta eous emission) is de te ast e t tal m er f modes inside the linewi t f t e s ta e s emissi a t eref ret e l me f t e pumped region.

i cluding resonator losseslifetime Rτ due to out

α requires a low t res lefficiency for a given tc li

timize f r e tracting the maximum p wer fr m t e res at ra small m er f modes which can

olume, if the gain in t cases is e alFB lasers a e a small footprint, an t eref r

the threshold is relati el lar eecreases wit l er WG. A large overla f t e m s t wit a l s iral WG ffers a

t m i f the organic gain material a lea s tuniformly distrib te al t e s iral WG

t e tc li m st be optimized for the ma im m t t wer i eac case

waveguides are fabricate wit l e lit ranm thick Si3N

mec a ically supported by a silic wafer T e etc maselectr n beam lithography a s ra e el i Dr etc i wit a mi t re f

sed to transfer the strste follows and remove

m t ic PMMA layer in which the laser e PMacts as t e acti e cladding ( 25µM g , P rr met e e Ra ia t D es Laser & Access ries

F r c aracterization, the chips

(a) s ws a scanning electr micr sc (SEM) ima e f tf a s iral laser with ring reso at r m e filter

c r ature radius of 40 µf a stri WG wit sidewall corrugations

em e e i t e dye-loaded PMMA

6

s fficiently so that no c m etiti cc rs T e m es f riave a small FSR,

c sequently high thres l sm er f l gitudinal modes insi e t e m e e s li ewi t a

TE a TM larize m es have a large spatial erla im des with similar fre e cies t iffere t larizati s

s t at t e t res old increases in these casesa t m efficiency dη of the laserwers the organic laser dyes are e ra i faster

lifetime f t e SiNOH laser is reduced. The ratio is denoted as indη

t e t tal m er f m es i si e the linewidth of the s ta e s emissi a t eref ret e l me f t e m e region. The total

tor losses 1ατ α− ∝

outcoupling only T

Rd ind

P

1

1

τη η

τ=

low threshold mo alf r a given outcoupling

timize f r e tracti t e ma imum power from the res at rw ic can accept spontane s emissi

f t e gain in both cases is e aland therefore the acti e re i as a small

ld is relatively largeA lar e overlap of the pum s t wit a l s iral WG ffers a

t m i f t e r a ic ain material and lea s tdistributed along the s iral WG

t e tc li m st e timize for the maximum o t t wer i eac case

fabricated with only e lit raN4 layer, on top f

mec a icall s rte by a silicon wafer T e etc maselectr eam lit raphy and spray devel i Dr etc i wit a mi t re f

se t tra sfer the structure of the mas t t e Siremoves the etch mas After str ct ri t e WG c res a

the laser dye PM, Pyrromethene 5 Ra ia t D es Laser & Access ries

F r c aracterizati t e chips are cleaved o e si e

(a) s ws a sca i electron microscop (SEM) ima e f twit ri g resonator mode filter

µm for low radiati l ssesc rr gations. Figure 3(c)

l a e PMMA cladding.

s that no competition occ rs T e m es f ri, and therefore ma cl sel ei

i h thresholds. An additi al l it i al m em er f l it i al m des inside the hom e e s li ewi t a

TE a TM larize m es a e a large spatial overlap im es wit similar frequencies b t iffere t larizati s

s t at t e t res l i creases in these cases. of the laser is im rta t f r a i t t

wers t e r a ic laser dyes are degradin fasterratio of induced and t tal emissi

indη . The spontane s emist e t tal m er f m es i si e t e li ewi t of the spontaneous emissi a t eref re

total photon lifetime1τ α∝ and outcouplionly. The differential

R

P

1

1

ττ

.

modal gain g , f r a i e tc pling, Eq. (5). The tc li as t

timize f r e tracti t e ma im m wer from the resonator. ntaneous emissio

f t e ai i t cases is equal. the active regio as a small

l is relati ely large. According tA lar e erla f the pump spot with a l s iral WG ffers a

t m i f t e r a ic ai material and leads to a low istri te along the spiral WG.

t e tc li m st e timize f r t e ma imum output power i eac case

fa ricate with only one lithograpon top of a 2 µm t ic silic i i e la er

mec a icall s rte a silic wafer. The etch maselectr eam lit ra a s ray developing. Dry etc i wit a mi t re f

ct re of the mask to the Sit e etch mask. After str ct ri t e WG c res a

t e laser dye PM597 is disperseP rr methene 597, Radiant D es Laser & Access ries

cleaved on one side there

(a) s ws a sca i electr microscopy (SEM) ima e f twit ri res at r mode filter. The spiral

m f r l w radiation losses(c) shows a cross

s t at c m etition occurs. The m es f rit erefore many closely ei

An additional longit i al m em er f l it i al m es i si e t e homogeneous li ewi t a

TE a TM larize m es a e a lar e s atial erlap inside the gai me i mm es wit similar fre e cies but different larizati s

is important for a i t twers t e r a ic laser es are egrading faster, and t eref r

f i ced and total emissiT e spontaneous emission e e s

t e t tal m er f m es i si e t e li ewi t f t e s taneous emission and t eref ret lifetime Pτ in the

utcoupling loss τifferential quantum efficie c

g , Eq. (1), (2), The outcoupling as t A small active l me

ta e s emissions results in a lar e

t e acti e region has a smallAccording to Eq. (2), t e t res l

A lar e erla f t e m s t with a long spiral WG ffers alow threshold gain,

istri te al t e s iral WG. However, as sai ef ret e tc li m st e timize f r t e ma im m t t ower in each case.

fa ricate wit l e lithographical step. The WGµm thick silicon di i e la er

mec a icall s rte a silic wafer T e etch mask is a ne ati e resistelectr eam lit ra a s ra e el i g. Dry etching with a mi t re f

ct re f t e mas to the Si3N4 layer. At e etc mas After structuring the WG c res a

persed was spin c ateP rr met e e Radiant Dyes Laser & Access ries

thereby providi access t

(a) s ws a sca i electr micr sc (SEM) image of the struct re Sispiral WG is curle

m f r l w ra iati l sses. Figure 3(b) dis la s as ws a cross-section of the Si

s t at c m etiti cc rs The modes of ring t eref re ma closely neighbored

A a iti al longitudinal mode m er f l it i al m es i si e t e m e eous linewidth and

the gain medium,m es wit similar fre e cies t ifferent polarizations

is im rta t for a high output and therefore the

f i ce a t tal emission (meaning sion depends on

t e t tal m er f m es i si e t e li ewi t f t e s ta e s emissi n and therefore on in the resonator

1Rτ− , is to be

antum efficiency is

(5

and leads to a T e tc upling has to be

A small active volume with res lts in a larger indη

t e acti e re i as a small overlap with , the threshold

A lar e erla f t e m s t wit a l spiral WG offers an t res l gain, Eq. (1). The

e er, as said before, t e tc li m st e timize f r t e ma im m t t wer i eac case.

step. The WG coresµm t ic silicon dioxide layer

a negative resist electr eam lit ra a s ra e el i Dr etc i with a mixture of

layer. An oxygen t e etc mas After str ct ri g the WG cores a

was spin coated and P rr met e e Ra ia t D es Laser & Accessories

roviding access to

e structured Si3N4

WG is curled-up densely (b) displays a part

secti n of the Si3N4 WG

s t at c m etiti cc rs T e m es f ring bored

A a iti al l it i al mode m er f l it i al m es i si e t e m e e s li ewi t and

t e ai medium, m es wit similar fre e cies t iffere t larizations

is im rta t f r a i utput the

meaning si e e ds on

t e t tal m er f m es i si e t e li ewi t f t e s ta e s emissi a t eref re on res nator,

to be is

5)

a be

with

indη

erla with t e t reshold

A lar e erla f t e m s t wit a l s iral WG ffers an . The

e er as sai efore,

cores µm t ic silic i i e layer

a e ati e resist electr eam lit ra a s ra e el i Dr etc i wit a mi t re of

ygen t e etc mas After str ct ri t e WG c res a

and P rr met e e Ra ia t D es Laser & Accessories

r i i access to

4

ensely part WG

Page 7: Lasing in waveguides - arXiv

Figure 3in PMMA. The emission f t e SiNOH lasermaximum of t e emissi f t e laser e re li e T is ca e e lai e t e i erprobabilities f r reMoreover, for s rter wa ele t s als i erto mode competiti a a lar er t res l ai f r eac si le laser m e

Characteri atio4.

We first investi ate t e i fl e ce f t e res at r e metr t e laser t res l a t elaser spectrum i a set acc r i t Fioperating pro erties f t e s iral a f

4.1 Characteri ation etup

The SiNOH lasers523 nm wavele tCrystaLaser),P1, and a beam s litter BSlight is focuse t e c i a le swith a polarizati mai tai idirect the emitte li tintegration inserted betwee t epolarization of t e lasi m eactively adjusti t e le se fi er t t

Fig. 3. SEM ima es f t e Si(a) Spiral res at r: T e s iral WG is e sel c iradiation losses smalla. (c) Crossand absorpti cr ssabsorption ma im m f PM i PMMA ree li e (SiNOH laser is earemission ma im m eca se f t e str er rea s r ti f r s rter wa ele t s

Fi ure 3(d) finally shows t e a s r ti a emissi cr ss sectii PMMA. The SiNOH laser is m e ear t e a s r ti ma im mT e emission of the SiNOH laserma imum of the emission f t e laser e re li e T is ca e e lai e t e i err a ilities for re-absorpti mar e a erla f t e a s r ti a emissi s ectra

M re ver, for shorter wavele t s als i ert m e competition and a lar er t res l ai f r eac si le laser m e

Characterization and demonstration of lasing

investigate the infl e ce f t e res at r e metr t e laser t res l a t elaser spectrum in a setup acc r i t Fi

erating properties of the s iral a f

Characterization setup

T e SiNOH lasers are pum e fr mwavelength, a pulse rati f

Cr staLaser), Fig. 4. The p lse e era beam splitter BSfocused on the chip a le spolarization maintai ithe emitted light

i te ration time). In the case f a s iral laserbetween the fiber c llimat r a t e ref c si le s

larization of the lasing m eacti ely adjusting the lense fi er t t

SEM images of the Si(a) S iral resonator: The spiral WG is e sel c ira iation losses small. (b) DFB res at r: C rr ate WG wit wi t

(c) Cross-section of the Sia absorption cross-sections f PM em e e i PMMA T e material is lasera s rption maximum of PM i PMMA ree li e (SiNOH laser is near 600 emission maximum, because f t e str er rea s r ti f r s rter wa ele t s

shows the absorpti a emissi cr ss sectiT e SiNOH laser is pumped ear t e a s r ti ma im m

T e emissi f t e SiNOH laser appearsma im m f t e emission of the laser e re li e T is ca e e lai e t e i er

absorption, marked b a erla f t e a s r ti a emissi s ectraM re er f r s rter wavelengths also hi ert m e c m etiti and a larger threshol ai f r eac si le laser m e

and demonstration of lasing

i esti ate the influence of the res at r e metr t e laser t res l a t elaser s ectr m i a setup according to Fi

erati r erties of the spiral and of

Chara teri ation setup

pumped from top, a pulse duration fThe pulse energy

a eam s litter BS transmits halff c se t e chip by a lens L

larizati maintaining (PM) t e emitte light to a spectrometer (S amr c i A r

I the case of a spiral laserfiber collimator a t e ref c si le s

larizati f t e lasing mode. An auxiliaracti el a j sti t e lensed fiber to the

SEM ima es f the Si3N4 WG with abs r ti a emissi s ectra f t e r a ic cla i material(a) S iral res at r: The spiral WG is densel c i

(b) DFB resonator: C rr ate WG wit wi tsecti of the Si3N4 WG core cla wit PMMA a P rr met e

sections of PM597 em e e i PMMA T e material is lasera s r ti ma im m of PM597 in PMMA, ree li e (

nm, red hatched area (emissi ma im m ecause of the stronger rea s r ti f r s rter wa ele t s

7

s ws t e absorption and emissi cr ss sectiT e SiNOH laser is umped near the absor ti ma im m

appears at around ma im m f t e emissi f t e laser dye, red line T is ca e e lai e t e i er

a s r ti marked by an overlap f t e a s r ti a emissi s ectraM re er f r s rter wa ele t s also higher-order tra s erse m es ca e i e lea it m e c m etiti a a lar er threshold gain for eac si le laser m e

and demonstration of lasing

i esti ate t e i fl e ce of the resonator geometr t e laser t res l a t elaser s ectr m i a set acc r ing to Fig. 4. In su se e t secti s we t e isc ss

erati r erties f t e s iral and of the DFB laser

top by a freque c le N :YLF lse lasera lse ration of 20 ns and a re etiti rate f

T e lse e ergy is varied with a alfhalf of the pumpL1. The SiNOH laser li t lensed fiber.

t a s ectrometer (Shamroc i A rI t e case f a spiral laser, an o ti

fi er c llimator and the refoc si le sAn auxiliary alignme t laser

he output WG

WG with absorption and emissi s ectra f t e r a ic cla i material(a) S iral res at r: T e s iral WG is densely coiled-up with a mi imal iameter f

( ) DFB res ator: Corrugated WG wit wi tWG core clad with PMMA a P rr met e

secti s f PM 97 embedded in PMMA T e material is lasera s r ti ma im m f PM i PMMA, green line (σa (53

re atched area (σe (600 nmemissi ma im m eca se f t e str nger reabsorption for sh rter wa ele t s

s ws t e a s r ti a d emission cross sectiT e SiNOH laser is m e ear t e absorption maxim m

around 600nm wavele t re s ifte fr m t ema im m f t e emissi f t e laser e red line. This can be e lai e t e i er

a s r ti mar e a verlap of the absorpti a emissi s ectraorder transverse modes ca e i e lea i

t m e c m etiti a a lar er t res l ai for each single laser m e

and demonstration of lasing

i esti ate t e i fl e ce f t e res ator geometry on the laser t res l a t eIn subsequent secti s we t e isc ss

t e DFB laser.

frequency doubled N :YLF lse laserns and a repetition rate f

arie with a half-wave (pump energy to an e er meter

T e SiNOH laser light is c A collimator

t a s ectr meter (Shamrock 500i, And rn optional rotata le

fi er c llimat r a t e refocusing lensalignment laser and aWG of the SiNOH laser

WG wit a s r ti a d emission spectra of the r a ic cla i material with a minimal diameter f

( ) DFB res at r: C rr ate WG with width w, corr ati e tWG c re cla wit PMMA and Pyrromethe

secti s f PM em e e i PMMA. The material is laser532 nm) = 2.56·10

nm) = 0.56·10-15 cmemissi ma im m eca se f t e str er rea s r ti for shorter wavelengths

s ws t e a s r ti a emissi cr ss sections of PM5T e SiNOH laser is m e ear t e a s r ti maximum, Fig. 3(

wavelength, redshifte fr m t ema im m f t e emissi f t e laser e re li e T is can be explained b t e i er

a s r ti mar e a erla f t e absorption and emissi s ectrar er tra s erse modes can be gui e lea i

t m e c m etiti a a lar er t res l ai f r eac si le laser mode.

i esti ate t e i fl e ce f t e res at r e metr n the laser threshol a t eI s se ent sections we then isc ss

fre e c bled Nd:YLF pulse lasers a a re etition rate of 20

wave ( 2λ ) plate an a larizerto an energy meter

s coupled from t ec llimator C and a refocusi

t a s ectr meter (S amr c i, Andor, 60 pm res l tirotatable linear polariz

fi er c llimat r a t e ref c si lens for selecting t e r erand a grating cou ler el i

SiNOH laser. The tra smissi f

WG wit a s r ti a emissi s ectra of the organic claddi materialwit a mi imal diameter of 80 µm for ee i t e

, corrugation depth WG c re cla wit PMMA a P rr methene (PM597).

secti s f PM em e e i PMMA T e material is laser-pumpe ear t e10-15 cm2). The emissi f t em2). It is redshifte fr m t e

emissi ma im m eca se f t e str er rea s r ti f r s rter wa elengths.

f PM597 dispersed (d), green line.

wa ele t redshifted from the ma im m f t e emissi f t e laser e re li e T is ca e e lained by the higher

a s r ti mar e a erla f t e a s r ti a d emission spectra. r er tra s erse m es ca be guided, leading

i esti ate t e i fl e ce f t e res at r e metr t e laser t reshold and on the I s se e t secti s we then discuss the

fre e c le N :YLF pulsed laser with20 Hz (CL523,

) late and a polarizer t a e er meter. The pump

le from the chip edge refocusing lens L2

pm resolution, 2 s polarizer P2 is

f r selecting the proper rating coupler help in

The transmission of

WG wit a s r ti a emissi s ectra f t e r a ic cladding material. m for keeping the

c rr ati epth d, and period (d) Emission

pumped near the ) T e emission of the

shifted from the

is ersed ) ree line.

wa ele t re s ifte fr m the ma im m f t e emissi f t e laser e re li e T is ca e e lai e t e igher

a s r ti mar e a erla f t e a s r ti a emissi s ectra. r er tra s erse m es ca e i e leading

i esti ate t e i fl e ce f t e res at r e metr t e laser t res l a n the the

with Hz (CL523,

) late a a larizer T e pump c i edge

2 s

is f r selecti t e roper

rati c ler elp in T e tra smission of

Page 8: Lasing in waveguides - arXiv

8

the DFB grating is measured by coupling the light of a white light source (SuperK, NKT Photonics) via the grating coupler, and by capturing the transmitted light at the output with the lensed fiber which illuminates the spectrometer.

4.2 Spiral laser

The ring resonator has a perimeter of L = 17.5 mm and consists of a densely packed double spiral for optimally filling the pump spot area, Fig. 5(a)-(c). The pump beam has a Gaussian profile with a full-width half-maximum spot size of 200 µm. The curvature of the spiral-shaped WG is limited to a minimum radius of 80 µm by the bending loss which can be tolerated. To avoid high propagation loss for the fundamental TE and TM modes, the WG are multimoded with a width of MM 500 nmw = (MM, black lines in Fig. 5(a)-(c)), leading to a loss of 4.6 dB/cm for the straight WG sections. This WG width implies a stronger confinement of the optical field to the WG and therefore a lesser overlap with the gain medium. Thus one would expect a smaller gain than could be achieved with narrower WG. However, we found that the single-moded WG have a larger loss of 6.7 dB/cm, leading to 10 to 20 times larger thresholds than for multimoded spirals. We suppress the oscillation of higher order transverse modes by single-mode filters (orange lines in Fig. 5(a)-(c)), which are inserted in the center of the spiral (curvature radius 40 µm) and as a loop in the coupling section between spiral and straight bus WG.

In a first step, we measure the lasing threshold of the spiral laser with a loop at the end of the spiral WG, Fig. 5(a). The (green) pump spot overlaps partially with the spiral’s evanescent field which reaches into the laser-active material. However, much of the pump energy remains unused. Figure 5(d) shows the normalized lasing spectrum, integrated over 2s and for a pump pulse energy of 715 nJ . The FSR of the spiral-shaped ring is

SpiralFSR 10 pm= corresponding to 8.3 GHz (spectrometer resolution 60 pm). Lasing occurs only in a small range ( 590nm to 610nm ) of the spontaneous emission spectrum of the laser dye, but the center of the lasing spectrum changes from integration interval to integration interval. Possibly mode competition could play a role, but the true reason is not yet known. We further integrate over all spectral line shapes and depict the calculated normalized output power as a function of the pump pulse energy W , Fig. 5(g). No significant fluctuation of the total power is observed which supports the idea of mode competition. We find a laser threshold of 312 nJ, corresponding to a pump fluence of 2400µJ cm for the area occupied by the spiral WG.

Fig. 4. Measuring the threshold and the spectrum of SiNOH lasers. The SiNOH laser is pumped with a free-space beam from a pulsed laser which is focused by a lens L1 on the SiNOH laser. The pulse energy of the pump laser is varied by rotating a half-wave plate with respect to a fixed linear polarizer P1. A beam splitter BS transmits half of the pump emission to an energy meter. The SiNOH laser emission is coupled from the chip by a lensed polarization-maintaining (PM) fiber. A collimator C and a refocusing lens L2 direct the light to a spectrometer. When measuring a spiral laser, a rotatable linear polarizer P2 is inserted in the collimated portion of the beam for selecting the proper polarization of the lasing modes. The lensed fiber is adjusted with the help of an auxiliary alignment laser at 635 nm which is coupled to the bus WG (spiral laser) or to the corrugated WG (DFB laser) through a grating coupler.

Page 9: Lasing in waveguides - arXiv

9

Next we investigate a spiral laser, where the coupling loop of Fig. 5(a) is expanded to be a small ring resonator with RingFSR 660pm= corresponding to 540 GHz, Fig. 5(b). The pump overlap with the laser-active volume is the same as in Fig. 5(a). Figure 5(e) shows the lasing spectrum for a pump pulse energy of 87 nJ . Lasing occurs for the fundamental TM mode (blue), and for the fundamental TE mode (red) according to multiples of RingFSR . The spectrum differs greatly from Fig. 5(d) and it is stable from integration interval to integration interval. We attribute this to the fact that the homogeneous line width of the dye is smaller than RingFSR so that different modes to not compete for gain. As a consequence, the pump energy at threshold, Fig, 5(h), is smaller than for the case of modes competing for gain as in Fig. 5(a), (d), (g). Figure 5(h) shows further that TM-polarized lasing modes have lower thresholds (53 nJ) than TE-polarized modes (62 nJ), corresponding to pump fluences of

256µJ cm (TM) and 265µJ cm (TE) at the laser-active area of the spiral. This is attributed

Fig. 5. Spiral laser. Threshold and lasing spectra for different mode filters and pump spot sizes. (a)-(c) Resonator geometries and pump spots (green). A transverse mode filter (orange) is implemented by tapering down the multimode spiral-shaped resonator WG from 500 nm width to 300 nm for single-mode propagation. (b),(c) A coupled ring resonator acts as a longitudinal mode filter and reduces the number of lasing modes in the spiral resonator. A pump spot size in the order of the spiral diameter wastes pump energy (a),(b). Focusing the pump spot to an area with high WG density (c) decreases the threshold. (d)-(f) Emission spectra. In (d) the scaling of the vertical axis differs from the scaling in (e),(f). If the small ring resonator is present, its FSR determines the lasing lines. (g)-(i) Laser output power as a function of the total pump pulse energy W (theshold energy Wth). The pump has a Gaussian spot which (partially) overlaps with the area occupied by the spiral resulting in an overlap pump energy Wov, upper horizontal axis. In (g) the scaling of the axes differs from the scaling in (h),(i). An additional ring filter with a round trip propagation loss of 1 dB (4 dB/cm, Q = 5×103) decreases the theshold by a factor of 6 compared to (g), where only the spiral with a round trip propagation loss of 6 dB exist (3.5 dB/cm). By enhancing the overlap of the pumpspot with the spiral the threshold further decreases by a factor of 1.5, and the slope of the laser characteristic is increasing.

Page 10: Lasing in waveguides - arXiv

10

to the fact that TM-polarized modes transport a larger fraction (0.2) of cross-sectional power in the gain medium outside the WG core than the TE modes (0.17). In addition, the loss for a TM-polarized mode (high electric field strengths at the smooth upper surface) is smaller than for a TE-polarized mode (high electric field strengths at the rough sidewalls).

The differential quantum efficiency Eq. (5) increases significantly as is seen by comparing the slopes in Fig. 5(g) and Fig. 5(h). The reason is that the photon lifetime for the combination of filter ring and spiral in Fig. 5(h) is much larger than for the spiral of Fig. 5(g) alone, while the outcoupling to the bus WG is the same in both cases. The ratio indη of induced and total emission in Eq. (5) sees a comparable mode number in both cases

The threshold of the spiral laser can be further decreased by increasing the overlap of the pump spot with the spiral WG. One way is to focus the pump spot to an area with densely spaced WG, Fig. 5(c), green spot, so that the effective pump fluence increases. The emission spectrum shows similar properties compared to Fig. 5(e). The lasing threshold, however, is 1.5 times smaller for the focused pump spot, and the corresponding pump fluence at threshold is 2980µJ cm , Fig. 5(i). However, this is not a fair comparison, because the pump energy is more efficiently used in the setting of Fig. 5(c) than in the one of Fig. 5(b).

We therefore better discuss the fraction ovW of the pump pulse energy that overlaps with the spiral WG, upper horizontal of Fig. 5(h),(i). With respect to ovW the threshold for both cases is the same, and this confirms the conclusion from Fig. 3d that the reabsorption in the unpumped regions is small. However, the differential quantum efficiency is larger for the focused pump beam, because the active volume is smaller and indη therefore larger, see text after Eq. (4).

4.3 Distributed feedback laser

Sidewall corrugations of a waveguide scatter light and establish a distributed feedback (DFB) resonator, Fig 6(a). The DFB structure has a length L, a width w, and the corrugations have a depth d and a period a. The feedback strength is κ , Eq. (3), and the separation of the lowest-order lasing modes is λ∆ , Eq. (4). The active medium of the DFB laser is pumped from top with an elliptical pump spot.

Figure 6(b), black line, shows the typical transmission spectrum of a passive DFB resonator measured by coupling the light of a super continuum laser (SuperK Versa, NKT Photonics GmbH) to the GC, and detecting the transmitted light with the spectrometer, Fig. 4. The resolution bandwidth (RBW) is as large as 260 pm, because the super continuum source is limited in power. As a consequence, the transmission maxima at the band edges are blurred. The emission spectrum of the pumped resonator is depicted in the same figure, red line and shows two lasing modes with 1.2 nmλ∆ = spectral distance. The induced gain and a temperature rise leads to a red shift as compared to the cold resonator. For better visualization the transmission spectrum was redshifted by 0.2nm . A dominant mode occurs at the lower bandgap edge for lower photon energies, loTE , whereas the upper bandgap lasing mode,

upTE , is less pronounced. The laser output power for and was measured as a function of the pump pulse energy W,

Fig. 6(c). The dominant laser mode of Fig. 6(b), filled red circles, starts lasing for lower pump pulse energies th,lo 32nJW = than the less pronounced one with th,up 41nJW = , open red circles. The differential quantum efficiency Eq. (5) is larger for the loTE mode than for the

upTE mode. In an ideal DFB laser both modes would have the same net gain und therefore the same threshold and the same differential quantum efficiency. Due to fabrication inaccuracies the corrugation is positioned slightly asymmetrically with respect to any end face reflections so that one of the modes becomes dominant. As both modes are amplified, the homogeneous line broadening of the dye must be smaller than the spectral separation of the DFB resonator modes.

Page 11: Lasing in waveguides - arXiv

11

Figure 6(d) shows transmission spectra for DFB resonators with different corrugation depths d, having otherwise the same geometry as in Fig. 6(b) for TE (red lines) and TM modes (blue lines). Thus the coupling strength κ was varied, but also the average WG width wav = w + d / 2. The bandgap centers for TE modes occur (16…18) nm redshifted from the ones of TM polarized modes. The width w of the WG core is 2 times larger than its height. This leads to a larger confinement and therefore to a larger avn for TE polarized modes. With increasing d the average WG width wav and the effective index avn increase. This increase is stronger for TE than for TM modes. As a consequence, the center wavelength vB a2 anλ = increases stronger for TE than for TM modes. The bandwidth λ∆ is slightly larger for TM polarized modes than for TE polarized modes for the same d. This means that the grating strength is larger for TM modes.

The threshold pump pulse energies for different coupling strengths κ and different lengths L=ma are shown in Fig. 6(e) for TM polarization, blue circles, and for TE polarization, red circles. From simulated effective indices for a homogeneous WG with widths w and w + d we calculate ∆n and the coupling strengths κ according to Eq. (3). For a better comparison, only the fraction of the pump pulse energy th,ovW is considered that overlaps with the DFB resonator. With the assumption ( )th,ovW Lg α∝ − , guidelines were vertically fitted for both polarizations according to Eq. (2) for low gain (κL large). With the same vertical scaling we used the numerical solution [22, Fig. 8] for high gain (κL small). A dashed spline connects both partial curves.

Fig. 6. Transmission and threshold for DFB resonators with various geometries. (a) Schematic of a DFB section with length L, corrugation depth d, period a, and width w. Parameters for Fig. 6(b)-(e). (b) Normalized DFB WG transmission (black line, RWB = 260 pm) and normalized spectrum (red line, RBW = 60 pm) of a DFB laser. The lasing modes are located at the edges of the stopband which are blurred because of the coarse resolution. The dominant laser mode occurs at the lower (in frequency terms) stopband edge TElo. The lasing mode at the upper stopband edge TEup, has much less power. (c) Laser characteristics. The dominant laser mode TElo starts lasing for lower pump pulse energies (•, Wth,lo = 32 nJ, left vertical axis) than the weak mode TEup at the upper stopband edge (○,Wth,up = 41 nJ, right axis). The horizontal upper axis gives the fraction of the pump pulse energy Wov that overlaps with the DFB structure. (d) Normalized DFB WG transmission for TE (red lines) and TM polarization (blue lines) for different corrugation depths d. The larger d becomes, the wider the stopband width ∆λ is. ∆λ is larger for TM compared to TE polarization for the same corrugation depth d. (e) Threshold pump pulse energies for different coupling strengths κL for TE and TM polarization. Only the fraction of the energy Wov of the pump beam that overlaps with the geometrical DFB structure is considered. The laser threshold decreases for larger κL. For TM polarization it decreases faster than for TE polarization. This can be explained by the larger overlap of the TM mode with the gain medium and by the lesser propagation loss compared to the TE polarized mode.

Page 12: Lasing in waveguides - arXiv

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The laser threshold decreases for larger Lκ . For TM polarization it decreases faster than for TE polarization. This can be explained by the larger overlap of the TM polarized mode with the gain medium compared to the TE polarized mode. In addition, the propagation loss is expected to be smaller for TM polarized modes as large field strengths are located at the smooth upper surface of the WG core. For TE polarized modes, large field strengths are located at the rather rough sidewalls of the WG core. Low thresholds of th,ov 0.3 nJW < are reached with total coupling strengths 15Lκ > . The pump fluences on the resonator at threshold are 2(40...60)µJ cm .

Note that a lower threshold does not necessarily lead to higher differential quantum efficiency. If the feedback is very strong, Rτ becomes much larger than ατ , Eq. (5), i. e., all light will be confined in the laser resonator, and there is no efficient outcoupling. Nevertheless, this effect could not be seen within our resonator study.

In order to achieve single mode lasing, DFB lasers with a quarter-wave shift /4(DFB )λ at 2L were investigated. The half-period ( / 4)λ shift in the center of the grating induces a / 2π phase shift, which leads to a lasing at the Bragg wavelength Bλ . Figure 7(a) shows a

schematic of a DFB section with quarter-wave shift in the middle, with total length L, corrugation depth d, period a and width w.

Figure 7(b), black line (RBW = 260 pm), shows the typical transmission spectrum of a passive /4DFBλ resonator with 3.4Lκ = . The emission spectrum of the pumped resonator is depicted in the same figure, red line, RBW = 60 pm. Although there is no characteristic transmission peak at Bλ in the middle of the transmission stopband, the laser mode occurs at

Bλ . Because for the white-light measurement the resolution of the spectrometer could not be chosen sufficiently high, the transmission peak in the stopband cannot be seen in the black curve.

The laser output power was measured as a function of the pump pulse energy W, Fig. 7(c). The single laser mode starts lasing for pump pulse energies th 33nJW = ( th,ov 0.07nJW = ), which is comparable to the threshold of the DFB gratings with large Lκ in Fig. 6(d). The pump fluence on the resonator at threshold is 264µJ cm .

Besides the lasing mode located at Bλ , the two “DFB lasing modes” located at the edges of the bandgap, Fig 6(b), can be amplified with lesser gain, if there is no competition for gain. As both “DFB modes” are not amplified for higher pump energies, the homogeneous line broadening of the dye must be larger than the spectral separation of the /4DFBλ modes. From

Fig. 7. Transmission spectrum and threshold of a DFBλ/4 laser. (a) Schematic of a DFB section with λ/4 shift at L/2, total length L, corrugation depth d, period a, and width w. The half-period (λ/4) shift in the center of the grating induces a π/2 phase shift, which leads to lasing at the Bragg frequency. Parameters for Fig. 6(b),(c). (b) Normalized transmission spectrum (black line, RBW = 210 pm) and laser emission (blue line, RBW = 60 pm) for a TM polarized mode. The lasing mode is located at λB in the middle of the stopband. The expected transmission peak at λB cannot be see, because the resolution of the spectrometer could not be chosen sufficiently large. (c) Laser characteristics: The TM laser mode starts lasing for pump pulse energies Wth = 33 nJ. The horizontal upper axis shows the fraction of the pump pulse energies Wov that overlaps with the DFBλ/4 laser.

Page 13: Lasing in waveguides - arXiv

that and our fi i s fr m t e DFB lasers we ca set a l werupper limit for t e m e e s li e r a e i f t e ai me i m

Discussion5.

After analyzi tw iffere t asic laser e metries we c m arecrucial for bi t icpolarization, compactnessand discussed i t e f ll wi secti

Spiral

DFB

/4DFBλ

Number of m des nd p l riz ti n

mainly define t e FSR f t e filteriexperiments we f t at lmodes within t e a wi t casmaller ring ra ii c l lea t i er r a ati l sses a t eref rThe possibleradii) is limite t egain mediumWG on the chi

For the DFB res at r t elimited by the et aipolarization ca e c tr lledominant. The m es arecontrolled by ar i t e t tal c li stre t f t e rati

For DFBlasers, the mo e ca e

Emitted power nd

is, the more large and canWG, but thi

It is possi le t a a t t e ra i s f t e laser ri s t athomogeneous r a e e li e f t efor stimulated em

For the DFB a t efor the spiral. A i crease f t e erla is l ssi le wit a str ali me t ashaping strate H we er t e small f t ri t ca e a a ta e s if

/4DFBλ laserspump spot.

The separati f t e tw DFB lasi m es isbroadened li ewi t f t e ai me i m O l es t at emit i twbroadened lines t at s ectrall erla wit t e DF

t at a d our findings from t e DFB lasers we ca set a l werer limit for the homoge e s li e r a e i f t e ai me i m

Discussion

fter analyzing two differe t asic laser e metries we c m arebiophotonic applicati s

larization, the total emitte wer t ec m actness on the chip.

ussed in the followi secti

Tab. 1

# lasing modes / total bandwidth

3…8 / ~ 15 nm

1 or 2 / ~ 2 nm

1 / 60 pm≤

Number of modes and p l riz ti n

mai l defined by the FSR f t e filterie eriments we found that lm es within the bandwi t casmaller ring radii could lea t i er r a ati l sses a t eref r

ssible increase ofmited by the mi im m m e se arati set t e

ai medium. The polarizati is mi e TE a TMWG the chip.

F r the DFB resonator t elimite by the net gain

larization can be contr lle. The modes are

c tr lled by varying the total c li stre t f t e rati

/4DFBλ lasers, onlylasers the mode can be chose

Emitted power and Footprint

t e more energy can be tra sferre t t e SiNOH laserlar e and can be further increase f c si t e m li t t a area wit

ut this comes at the c st f a lar e f t ri tIt is possible to adapt the ra i s f t e laser ri s t at

m eneous broadened li e f t ef r stimulated emission whic

F r the DFB and the f r t e spiral. An increase f t e erla is l ssi le wit a str ali me t a

ategy. However t e small f t ri t ca e a a ta e s iflasers is densely ac e

T e separation of the tw DFB lasi m es is

r a ened linewidth of t e ai me i m O l es t at emit i twlines that spectrall erla wit t e DF

t at a r fi i s from the DFB lasers we ca set a l werer limit f r t e mogeneous line broa e i f t e ai me i m

fter a al zi tw different basic laser e metries we c m areapplications. Imp rta t

emitted power, thet e chip. The laser geometries a t eir r erties

sse i t e following section.

1. Comparison of

m des /

Polarizationfundamental m e

Mixed TE a TM

Either TE or TM

Either TE or TM

Number f m des and polarization

mai l efi e t e FSR of the filterine erime ts we f d that lasing occursm es wit i t e andwidth can be smaller ri ra ii c uld lead to higher pr a ati l sses a t eref r

i crease of the number ofminimum mode se arati set t e

T e olarization is mixed TE a TM

F r t e DFB resonator the emission wa ele t ca elimite t e et gain spectrum. By caref ll c si t e eri f t e rati t e

larizati ca e controlled. Two m es ca e am lifie t s all e m e isT e m es are spectrally se arate

c tr lle ar i g the total coupling stre t f t e rati, only one mode

chosen in a large s ec

Footprint The lar er t e erla f t e laser WG wit t e m s tcan be transferred t t e SiNOH laser

e f rther increased by foc si t e m li t t a area wits c mes at the cost of a large f t ri t

It is ssi le t adapt the radius of the laser ri s t atm e e s r a ened line of the gai me i m

which leads to a i emitte werF r t e DFB a the /4DFBλ laser

f r t e s iral A i crease of the overlap is l ssi le wit a str ali me t aate H wever, the small fo t ri t ca e a a ta e s if

is ensely packed into

T e se arati f the two DFB lasi m es isr a e e li ewi t of the gain medi m O l es t at emit i tw

li es t at spectrally overlap wit t e DF

13

t at a r fi i s fr m t e DFB lasers, we can set a l werer limit f r t e m e e s line broadening of the ai me i m

fter a al zi tw iffere t asic laser geometries we c m aremportant requireme t

emitte wer, the resilience wit res ect t e ter al fee acT e laser geometries and their r erties

C mp rison of laser properties f r different e metries

P larization f amental mode

Resilie ce witrespect t e ter alfeedbac

TE and TM ++

it er TE or TM +

it er TE or TM −

Number f m des nd p l rization For the spiral res at rmai l efi e t e FSR f t e filtering and the spectral

urs at 600 nm wit i abe controlled by t e ra i s f t e filter ri N te t at

smaller ri ra ii c l lea t igher propagation losses a t eref rmber of simultaneousl scillati

mi im m mode separation set t eT e larizati is mixed TE and TM

emission wavelength ca eBy carefully ch si t e eri f t e rati t e

Two modes can be am lifie t s all e m e iss ectrally separated by

c tr lle ar i t e t tal c pling strength of the ratimode at the Bragg wa ele t scillates

a large spectral range ar i t e eri f t e rati

The larger the overla f t e laser WG wit t e m s tca e tra sferred to the SiNOH laser

e f rt er i crease by focusing the pum li t t a area wits c mes at t e c st f a large footprint on t e c i

It is ssi le t a a t t e ra i s of the laser ring s t atgain medium. In

to a high emitted werlaser, the overlap wit t e m s t is m c smaller t a

f r t e s iral A i crease f t e verlap is only possi le wit a str ali me t aate H we er t e small footprint can be a a ta e s if

to a small area

T e se arati f t e tw DFB lasing modes isr a e e li ewi t f t e ai medium. Only d es t at emit i tw

li es t at s ectrall verlap with the DF

t at a r fi i s fr m t e DFB lasers we can set a lower er limit f r t e m e e s li e r a e i g of the gain medium

fter a al zi tw iffere t asic laser e metries we comparerequirements are the emissi a wi t

esilience with respect to e ter al fee acT e laser e metries and their properties

pr perties for different geometries

Resilience with respect to external feedback

piral resonatorspectral distributi

nm within a 15 nm ba wi tc tr lled by the radius of t e filter ri N te t at

smaller ri ra ii c l lea t i er r a ation losses and theref rsim ltaneously oscillating

mi im m m e se aration set by the homo e e s li ewi t f t eT e larizati is mi e TE a TM and could be

emissi wa elength can be chosen iB caref lly choosing the peri f t e rati t e

Tw m es can be amplified, t s all e m e is ~ 2 nm. This

c tr lle ar i t e t tal c li stre t of the grating. at t e Bragg wavelength oscillates

tral range by varying t e eri f t e rati

T e lar er t e overlap of the laser WG wit t e m s tca e tra sferre t t e SiNOH laser. For spiral lasers t

e f rt er i crease f c si the pump light to an area witon the chip.

It is ssi le t a a t t e ra i s f t e laser ring so that its FSR. In this case all

t a i emitted power. t e erlap with the pump s t is m c smaller t a

f r t e s iral A i crease f t e erla is l possible with a stro ali me t aate H we er t e small f t ri t can be advantageo s if

a small area and pumped

T e se arati f t e tw DFB lasi m des is usually larger a e e li ewi t f t e ai me i m Only dyes that emit i tw

li es t at s ectrall erla wit the DFB lasing modes c tri te t

limit loλ∆ =er limit f r t e m e e s li e r a e i f t e ai medium, up 1.2 mλ∆ =

fter a al zi tw iffere t asic laser e metries we compare the properties t at areare the emission ba wi t

esilie ce wit res ect to external feedbacT e laser e metries a t eir r erties are summarize i

pr perties f r different geometries.

Total emitted power

++

+

+

iral res nator the number f m es isistribution of the net ai

nm bandwidth. The m er fc tr lle t e ra ius of the filter rin N te t at

smaller ri ra ii c l lea t i er r a ati l sses a d therefore to higher t res l ssim lta e sl scillating modes (with

homogeneous linewi t f t ebe distributed to tw

chosen in a large spectral ra eB caref ll c si the period of the rati t e

Tw m es ca e am lified, but usually o e m e is bandwidth can e sli tl

at t e Bra wa ele th oscillates. Similar t t e DFBtral ra e arying the period of t e rati

T e lar er t e erla f the laser WG with the m s tor spiral lasers th

e f rt er i crease f c si t e m li t to an area with de s

FSR is slightly lar er t aall pumped dyes ca e se

t e erla wit t e pump spot is much smaller t af r t e s iral A i crease f t e erla is l ssi le with a strong alignment a

ate H we er t e small f t ri t ca e a antageous, if an array f DFBmped in parallel wit t e same

larger than the h m e e sr a e e li ewi t f t e ai me i m O l es t at emit in two hom e e sl

lasi g modes contribute t

lo 0.5nm∆ = and an1.2nm∆ = .

properties that are are t e emission bandwidth, the

esilie ce wit res ect t e ter al feedback, and the are s mmarized in Tab. 1

Compactness

−

++

++

t e mber of modes is f the net gain. In our

The number of c tr lle t e ra i s f t e filter ring. Note that

higher thresholdswith larger ring

m e e us linewidth of the to two separate

spectral rangeB caref ll c si t e eri of the grating the

Tw m es ca e am lifie t s ally one mode is a wi th can be slightly

Similar to the DFB tral ra e ar i t e eriod of the grating.

T e lar er t e erla f t e laser WG with the pump spotr s iral lasers this overlap is

densely spaced

is sli htly larger than the m e dyes can be used

t e erla wit t e m s t is much smaller than f r t e s iral A i crease f t e erla is l ssi le wit a str ali nment and a beam

an array of DFB or i arallel with the same

r t a the homogeneous homogeneously

lasi m es c tribute to the total

n

r erties t at are the

a d the 1

ness

t e m er f m es is In our

T e m er of c tr lle t e ra i s f t e filter ri N te that

i er t res olds. ring

m e e s li ewi t f the se arate

s ectral range, B caref ll c si t e eri f t e rati g the

Tw m es ca e am lifie t s all e m de is a wi t ca e slightly

Similar t t e DFB

T e lar er t e erla f t e laser WG wit t e m spot is erlap is

el spaced

the m e es ca e used

t e erla wit t e m s t is m c smaller than beam

or i arallel wit t e same

r t a t e m eneous m e eously

t e total

Page 14: Lasing in waveguides - arXiv

stimulated emissi F r t elinewidth can c tri te t stim late emissismaller than f r

Resilience with respect t

disturb and the single mo e tc li WG ac reflecti s ca elaser.

In our ex erime ts wcouplers or splitters i t re ce t e t tal emitte werhowever, became sta leshowed fabricati im erfecti sdominated bygrating and

Summary6.

We demonstrate a i esti ate a ew class f ri rwavelength

The SiNOH lasers are erate ticall m i fr m talignment precisisilicon nitride wa e i es i arallel wit t er e ices t e same c isubsequentlyThe monolithichighly attracti e

We investi ateresonators. investigated m if i t e res at r e metr a t e m strateSiNOH lasers ffer l w t res l fl e ces f ( )

The SiNOH lasersvery robust a ai st e ter al fee ac a a e i t tal emitte werssmall footprint a a small a wi t t at ca e c se i a lar e wa ele t ra e

Funding

Alfried Krup B le Hal ac F ati E r ea ResStarting Grant ‘E TeraPIC’ m er ) Karlsr e Sc l f O tics a P t ics(KSOP).

Acknowledgments

We acknowle e s rt t e Karlsr e Na Micr Facilit (KNMF) a Helm ltzResearch Infrastr ct re at Karlsr e I stit te

References

1. E. Makaro a et al “P i t

109-133 (2 )

2. E. Luan, H S ma D M Rat er K C C e a L C r st ws i “Silic

label-free

3. P. Muellner E Mel i G K itsc J Kraft F

waveguides f r

4. A. Z. Subrama ia E R c e er A

A. Ruocco A De Gr te P W te s D Marte s F Le W Xie U D Da e M M ee P Va D r e J

Van Campe t W B aerts P Bie stma N Le T mas D Va T r t Z He s G R

stim lated emission. For thecan contribute t stim late emissi

smaller than for spiral lasers

Resilience with respect t

even suppress t e i ter al laser scillatit e si gle mode outcouplin WG ac reflecti s ca e

I our experiments wc lers or splitters did not re ce t e t tal emitte wer

became unstablefabrication imperfecti s

mi ated by spuriously oscillatirati and end facet of the

Summary

We emonstrate and investi ate a ew class f ri r that can be mo lit icall i te rate t e silic itri e latf rm

T e SiNOH lasers are erate ticall m i fr m tali ment precision. The lasersilic nitride waveguides i arallel wit t er e ices t e same c is se uently dispensing or s i

monolithic fabrication a t e easi l attractive for biophot ic

investigate two differe t laser e metries Different approac es f r im r i t e erf rma ce f t e SiNOH lasers

i estigated by modifying t e res at r e metr a t e m strateSiNOH lasers offer low thres l fl e ces f ( )

T e SiNOH lasers fulfiler r bust against external fee ac a a e i t tal emitte wers

small footprint and a small a wi t t at ca e c se i a lar e wa ele t ra e

Alfrie Krupp von Bohle Hal ac F ati E r ea ResStarti g Grant ‘EnTeraPIC’ m er ) Karlsr e Sc l f O tics a P t ics

Acknowledgments

We acknowledge support t e Karlsr e Na Micr Facilit (KNMF) a Helm ltzResearch Infrastructure at Karlsr e I stit te

References

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133 (2016).

E Luan, H. Shoman, D. M. Rat er K C C e a L C r st ws i “Silic

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P Muellner, E. Melnik, G. K itsc J Kraft F

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A Z. Subramanian, E. Rycke er A

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Va Campenhout, W. Bogaerts P Bie stma N Le T mas D Va T r t Z He s G R

stim late emissi For the /4DFBλ laserca c tribute to stimulated emissi

s iral lasers.

Resilience with respect to external feedb ck

e e s press the internal laser scillatit e si le m e tcoupling WG, back reflecti s ca e

I r e eriments we found that c lers r s litters did not reduce the t tal emitte wer

ecame nstable if a subseq e tfa ricati imperfections. Especiall t e

s ri usly oscillating Fabre facet of the coupling WG

We em strate a investigate a new class f ri rt at ca be monolithically inte rate t e silic itri e latf rm

T e SiNOH lasers are operated b ticall m i fr m tThe lasers can be

silic itri e wa eguides in parallel wit t er e ices t e same c iis e sing or spin coating t e r a ic ai me i m t f t e WG c resfa rication and the easy

biophotonic applicati stwo different laser e metries

approaches for im r i t e erf rma ce f t e SiNOH lasersi esti ate m ifying the resonator e metr a t e m strateSiNOH lasers ffer low threshold fluences f ( )

fulfil crucial dema ser r st a ai st external feedback an a e i t tal emitte wers

small f t ri t a a small bandwidth that ca e c se i a lar e wa ele t ra e

Alfrie Kr Bohlen und Halbac F ati E r ea ResStarti Gra t ‘E TeraPIC’, number 2 ) Karlsr e Sc l f O tics a P t ics

We ac wle e support by the Karlsr e Na Micr Facilit (KNMF) a Helm ltzResearc I frastr ct re at Karlsruhe Instit te

-of-need bioanalytics ase la ar tical i terfer metr ” Bi tec l A

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etecti ” Sensors 18(10), 3519 ( )

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iosensing,” Procedia E

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Va Cam e t W. Bogaerts, P. Bienstma N Le T mas D Va T r t Z He s G R

14

laser only dyes emitti ica c tri te t stim lated emission. In t cases t e

e ternal feedback Bace e s ress t e i ternal laser oscillation

t e si le m e tc li WG back reflections ca e

e f that for the spiral lasersc lers r s litters i t re ce the total emitted p wer

subsequent optical circ it Especially the com ara l

Fabry-Perot modesc ling WG.

We em strate a i esti ate a new class of hybrid rt at ca e m lit ically integrated on the silic itri e latf rm

T e SiNOH lasers are erated by optically p m i fr m tcan be fabricated in

silic itri e wa e i es i arallel with other e ices t e same c icoating the organic ai me i m t f t e WG c res

fa ricati a t e easy-to-handle oapplications.

tw iffere t laser geometries, a r ac es for improving the perf rma ce f t e SiNOH lasers

i esti ate m if i t e resonator geometry a t e m strateSiNOH lasers ffer l w t res l fluences of (40…70)

cr cial demands for bio t ic a licati ser r st a ai st e ter al fee ack and have high t tal emitte wers

small f t ri t a a small a width that can be chose i a lar e wa ele t ra e

Alfrie Kr B le Halbach Foundatio E r ea ResStarti Gra t ‘E TeraPIC’ mber 280145), Karlsr e Sc l f O tics a P t ics

We ac wle e s rt t e Karlsruhe Nano Micr Facilit (KNMF) a Helm ltzResearc I frastr ct re at Karlsr he Institute of Techn l

i analytics based on planar tical i terfer metr ” Bi tec l A

E L a H S ma D M Rat er K C. Cheung, and L. Chr st ws i “Silic

( ) 519 (2018).

P M ell er E Mel i G K itsc J. Kraft, F. Schrank, R. Hai er er “

” Procedia Eng. 120, 578-

Dhakal, F. Peyskens, A Mali B K e H Z a S Pat a

R cc A De Gr te P W te s, D. Martens, F. Leo, W Xie U D Da e M M ee P Va D r e J

Va Cam e t W B aerts P Bienstman, N. Le Thomas, D Va T r t Z He s G R

dyes emitting in one m e e s r a e e. In both cases the

Back reflectione e s ress t e i ter al laser scillation. As the SiNOH laser

t e si le m e tc li WG ac reflections can be easily co le

t e spiral lasers subseqc lers r s litters i t re ce t e t tal emitted power. The power

ptical circuit was t r ermparably short

modes generated b

We em strate a i esti ate a ew class f hybrid organic dye laserst at ca e m lit icall i te rated on the silicon nitri e latf rm

T e SiNOH lasers are erate tically pumping from tin one lithograp ste

silic itri e wa e i es i arallel wit other devices on t e same c ic ati t e rganic gain medium t f t e WG c res

a dle operation principle ma e t e SiNOH laser

tw iffere t laser e metries, spiral-shaped a r ac es f r im r i the performance of t e SiNOH lasers

i esti ate m if i t e res at r e metry and the pump strateSiNOH lasers ffer l w t res l fl e ces f ( 0…70) 2µJ cm .

biophotonic applicati ser r st a ai st e ter al fee ac a a e high total emitted p wers

small f t ri t a a small a wi t t at ca e chosen in a large wa ele t ra e

Alfrie Kr B le Hal ac F ndation, European ResStarti Gra t ‘E TeraPIC’ m er ), Karlsruhe School f O tics a P t ics

We ac wle e s rt t e Karlsr e Nano Micro Facilit (KNMF) a Helm ltzf Technology.

i a al tics ase planar optical interferometr ” Bi tec l A

E L a H S ma D M Rat er K C C e a L. Chrostowski, “Silico

R. Hainberger, “CMOS

-581(2015).

D a al F Pe s ens, A. Malik, B. Kuyke H Z a S Pat a

R cc A De Gr te P W te s D Marte s F Leo, W. Xie, U. D. Dave M M ee P Va D r e J

Va Cam e t W B aerts P Bie stma N Le T omas, D. Van Thourho t Z He s G R

one homogeneous r a e eI t cases the total emitte wer

ion into laser res at rs caSiNOH laser emits

coupled back

subsequent devices li e ratipower output of

was not properlyshort /4DFBλ lasers

e erated by the region betwee

a ic dye lasers emittint at ca e m lit icall i te rate t e silic n nitride platform.

T e SiNOH lasers are erate ticall m i from top requirin lt ography step by str ct ri t e

silic itri e wa e i es i arallel wit t er e ices on the same chic ati t e r a ic ai medium on top of the WG c res

erati principle make the SiNOH laser

s aped ring resonatora r ac es f r im r i t e erf rmance of the SiNOH lasers

i esti ate m if i t e res at r e metr a t e pump strategy. All

i t ic applications. Spiral laser r st a ai st e ter al fee ac a a e i t tal emitted powers. DFB lasers ffer a

small f t ri t a a small a wi t t at ca e c se i a large wavelength ra e

Alfrie Kr B le Hal ac F ati E ropean Research Co cil (ERCStarti Gra t ‘E TeraPIC’ m er ) Karlsr e School of Optics an P t ics

We ac wle e s rt t e Karlsr e Na Micr Facility (KNMF), a Helm ltz

i a al tics ase la ar tical i terferometry,” Biotechn l A

E L a H S ma D M Rat er K C C e a L C r st ws i “Silicon photonic biosens rs

CMOS-compatible Si

D a al F Pe s e s A Mali B Kuyken, H. Zhao, S. Pat a

R cc A De Gr te P W te s D Marte s F Le W Xie U D. Dave, M. Muneeb, P. Va D r e J

Va Cam e t W B aerts P Bie stma N Le T mas D Va T ourhout, Z. Hens, G. R

e m geneous broadened t tal emitted power is

i t laser resonators can emits directly into

to the SiNOH

e t evices like grating of DFB lasers

ly designed or lasers were often

region between DFB

emitting at 600 nm t at ca e m lit icall i te rate t e silic itri e latform.

requiring only low by structuring the

silic itri e wa e i es i arallel wit t er e ices t e same chip, and by c ati t e r a ic ai me i m t of the WG cores.

erati ri ci le ma e the SiNOH laser

ri resonators and DFB a r ac es f r im r i t e erf rma ce f t e SiNOH lasers were

All investigated

piral lasers are DFB lasers offer a

small f t ri t a a small a wi t t at ca e c se i a lar e wa ele gth range.

earch Council (ERC Starti Gra t ‘E TeraPIC’ m er ) Karlsr e Sc l f O tics and Photonics

We ac wle e s rt t e Karlsr e Na Micr Facilit (KNMF), a Helmholtz

i a al tics ase la ar tical i terfer metr ” Biotechnol. Adv. 34(3),

iosensors using

c m atible Si3N4

D a al F Pe s e s A Mali B K e H Z a , S. Pathak,

R cc A De Gr te P W te s D Marte s F Le W Xie U D Da e M M eeb, P. Van Dorpe, J.

Va Cam e t W B aerts P Bie stma N Le T mas D Va T r t Z He s, G. Roelkens, and R.

e m e e s r a ened is

i t laser res at rs can irectly into

t t e SiNOH

e t e ices li e rating DFB lasers, esi ed or were often

DFB

nm

low str ct ri g the

by c ati t e r a ic ai me i m t f t e WG cores.

erati ri ci le ma e t e SiNOH laser

a DFB were

i estigated

ers are DFB lasers ffer a

earc C cil (ERC Starti Gra t ‘E TeraPIC’ m er ) Karlsr e Sc l f O tics a P tonics

We ac wle e s rt t e Karlsr e Na Micr Facilit (KNMF) a Helmholtz

,

el e s a d R.

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