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Grupo de Sistemas Digitais e Embarcados (GSDE)www.gsde.furg.br
SIM 201631st South Symposium on Microelectronics
Porto Alegre, Brazil
Reliability Evaluation of Combinational Circuits from a Standard Cell Library
Ygor Quadros de Aguiar, Alexandra Lackmann Zimpeck, Cristina Meinhardt
2/30 31st South Symposium on Microelectronics
Porto Alegre, Brazil – May/2016www.gsde.furg.br
Agenda
1. Introduction2. Motivation and Objective3. Single Event Effects4. NFAS-tool5. Experiments6. Final Remarks
3/30 31st South Symposium on Microelectronics
Porto Alegre, Brazil – May/2016www.gsde.furg.br
Introduction
New challenges introduced by tecnology scaling:❖ process variability
❖ reliability
✓ increased device failure rates
✓ low yield
4/30 31st South Symposium on Microelectronics
Porto Alegre, Brazil – May/2016www.gsde.furg.br
Motivation
The increasingly need of EDA (Electronic Design Automation) tools for:✓ robustness evaluation of design
✓ assessment of fault tolerant tecniques
The NFAS-tool
Stuck-OnStuck-Open
Single Event Transient
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Objective
Evaluate the SET effects on combinational circuits from a Standard Cell Library to explore the features
designed at NFAS-tool (Nanotechnology Fault Analysis Simulation tool)
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Single Event Effects (SEE):
Destructive:SEL (Single Event Latchup), SEGR (Single Event Gate Rupture) ...
Non-destructive:SET (Single Event Transient): combinational cells SEU (Single Event Upset): sequential cells
Fig. Single Event Upset (SEU) and Single Event Transient (SET) (Azambuja J. R., 2014)
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Single Event Transient (SET)
Figura: Schematic of energy transfer as a voltage pulse (Wang, 2008)
9/30 31st South Symposium on Microelectronics
Porto Alegre, Brazil – May/2016www.gsde.furg.br
Single Event Transient (SET)
Figura: Schematic of energy transfer as a voltage pulse (Wang, 2008)
Linear Energy Transfer:amount of energy released by a particle per unit length crossed
11/30 31st South Symposium on Microelectronics
Porto Alegre, Brazil – May/2016www.gsde.furg.br
Injection of Transient Faults
NFAS-tool
Circuit Parameters
Fault Parameters
Netlist File
NGSpice
Netlist under faults
Fault Analysis/Log Files
Output Files from electrical simulations
(.data)
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Interface - SET Injections
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Reliability Analysis
- Modelo da falha SET- Inserção de Fonte de Corrente
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Set of analysis available by the tool:
✓ influence of operating frequency;
✓ different technologies node;
✓ different SET characteristics;
✓ reliability regarding the input vectors.
Reliability Analysis
16/30 31st South Symposium on Microelectronics
Porto Alegre, Brazil – May/2016www.gsde.furg.br
Experiments
❖ Fault injection carried on the output nodes.
➢ worst scenario
❖ Number of faults: two injections for each circuit time slot of simulation
➢ HA_X1: 22 injections,
➢ AOI21_X1: 26 injections,
➢ NAND2_X1: 12 injections.
❖ 3 combinational logic cells from a 45nm commercial Standard Cell library:
17/30 31st South Symposium on Microelectronics
Porto Alegre, Brazil – May/2016www.gsde.furg.br
Experiments
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Operating Frequency Analysis
Technology node: 45nm High Performance PTM and LET = 1 MeV-cm2/mg
Prop
agat
ed F
aults
(%)
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Prop
agat
ed F
aults
(%)
Operating Frequency Analysis
Technology node: 45nm High Performance PTM and LET = 3 MeV-cm2/mg
20/30 31st South Symposium on Microelectronics
Porto Alegre, Brazil – May/2016www.gsde.furg.br
Technology Node Analysis
Prop
agat
ed F
aults
(%)
Half Adder (HA_X1) and LET = 1 MeV-cm2/mg
21/30 31st South Symposium on Microelectronics
Porto Alegre, Brazil – May/2016www.gsde.furg.br
~15%
>30%
Prop
agat
ed F
aults
(%)
Technology Node Analysis
Half Adder (HA_X1) and LET = 1 MeV-cm2/mg
22/30 31st South Symposium on Microelectronics
Porto Alegre, Brazil – May/2016www.gsde.furg.br
Prop
agat
ed F
aults
(%)
Technology Node Analysis
2-input NAND (NAND2_X1) and LET = 1 MeV-cm2/mg
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
~35%
~41,67%
Prop
agat
ed F
aults
(%)
Technology Node Analysis
2-input NAND (NAND2_X1) and LET = 1 MeV-cm2/mg
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Analysis of Linear Energy Transfer
Propagated Faults (%)
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Propagated Faults (%)
Analysis of Linear Energy Transfer
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Propagated Faults (%)
Analysis of Linear Energy Transfer
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Propagated Faults (%)
Analysis of Linear Energy Transfer
~3X
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Porto Alegre, Brazil – May/2016www.gsde.furg.br
Increased need for EDA tools regarding reliability analysis!!
NFAS-tool
✓ evaluates the reliability of combinational logic circuits under SET faults
✓ provides a set of information about the behavior of the faulty circuit elucidating the direct influence of design parameters
✓ supports the development of fault tolerant techniques more robust and efficient
Final Remarks
Grupo de Sistemas Digitais e Embarcados (GSDE)www.gsde.furg.br
SIM 201631st South Symposium on Microelectronics
Porto Alegre, Brazil
Reliability Evaluation of Combinational Circuits from a Standard Cell Library
Ygor Quadros de [email protected]