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1
Chapter 1
“P-N” Diode
1.
1p
Figure 1.1 shows the structure of a „p-n” junction. With „p” has been
noted:
ANp ≅
A
DNn ≅
C
Metallurgical junction
Figure 1.1
a.) the concentration of the acceptor atomsb.) the concentration of the donor atomsc.) the concentration of the electronsd.) the concentration of the holesCorrect answer d.)
2.1p
Figure 1.1 shows the structure of a „p-n” junction. With „n” has beennoted:
ANp ≅
A
DNn ≅
C
Metallurgical junction
Figure 1.1
a.) the concentration of the acceptor atomsb.) the concentration of the donor atomsc.) the concentration of the electronsd.) the concentration of the holesCorrect answer c.)
3.
1p
Figure 1.1 shows the structure of a „p-n” junction. With „ N A” has
been noted:
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ANp ≅
A
DNn ≅
C
Metallurgical junction
Figure 1.1
a.) the concentration of the acceptor atomsb.) the concentration of the donor atomsc.) the concentration of the electronsd.) the concentration of the holesCorrect answer a.)
4.
1p
Figure 1.1 shows the structure of a „p-n” junction. With „ N D” has
been noted:
ANp ≅
A
DNn ≅
C
Metallurgical junction
Figure 1.1
a.) the concentration of the acceptor atomsb.) the concentration of the donor atomsc.) the concentration of the electronsd.) the concentration of the holesCorrect answer b.)
5.1p
Figure 1.2 shows the symbol of a „p-n” diode. With „A” has beennoted:
Figure 1.2
a.) anodeb.) cathodec.) total instantaneous value of the drop voltage across the dioded.) total instantaneous value of the current flowing through the diodeCorrect answer a.)
6.
1p
Figure 1.2 shows the symbol of a „p-n” diode. With „C” has been
noted:
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Figure 1.2
a.) anodeb.) cathodec.) total instantaneous value of the drop voltage across the dioded.) total instantaneous value of the current flowing through the diodeCorrect answer b.)
7.
1p
Figure 1.2 shows the symbol of a „p-n” diode. With „v A” has been
noted:
Figure 1.2
a.) anodeb.) cathodec.) total instantaneous value of the drop voltage across the dioded.) total instantaneous value of the current flowing through the diodeCorrect answer c.)
8.
1p
Figure 1.2 shows the symbol of a „p-n” diode. With „i A” has been
noted:
Figure 1.2
a.) anodeb.) cathodec.) total instantaneous value of the drop voltage across the dioded.) total instantaneous value of the current flowing through the diodeCorrect answer d.)
9.3p
“Diode effect” means:
a.) in normal operation- practically -the current through the diode
flows only from cathode to anodeb.) in normal operation- practically -the current through the diode
flows only from anode to cathode
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c.) in normal operation - practically - meaning diode current is dictatedby the external circuit of the dioded.) in normal operation, - practically - the diode current flows
sometimes from the anode to the cathode and other times from thecathode to the anode
Correct answer b.)
10.
1p
Figure 1.3 shows a "p-n" junction at thermal equilibrium. With „1”
has been noted:
p n
- -
- -
- -
- -
- -
- -
- -
+ + + +
+ + + +
+ + + +
+ + + +
+ + + +
+ + + +
E
1. 3.2.
Figure 1.3
a.) P neutral regionb.) N neutral regionc.) transition regiond.) internal electric fieldCorrect answer a.)
11.
1p
Figure 1.3 shows a "p-n" junction at thermal equilibrium. With „2”
has been noted:
p n
- -
- -
- -
- -
- -
- -
- -
+ + + +
+ + + +
+ + + +
+ + + +
+ + + +
+ + + +
E
1. 3.2.
Figure 1.3
a.) P neutral regionb.) N neutral regionc.) transition regiond.) internal electric fieldCorrect answer c.)
12.1p
Figure 1.3 shows a "p-n" junction at thermal equilibrium. With „3”has been noted:
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a.) concentration gradient of the acceptor and donor atoms of the “p”neutral region and transition regionb.) concentration gradient of the acceptor and donor atoms of the “n”
neutral region and transition regionc.) concentration gradient of the acceptor and donor atoms of the “p”
neutral region and “n” neutral regiond.) concentration gradient of donors and the acceptor atoms
surrounding the metallurgical junctionCorrect answer d.)
16.
3p
Figure 1.4 shows a "p-n" junction at thermal equilibrium. Transition
region responsible for the appearance of diode-effect occurs aroundthe metallurgical junction as a result of the diffusion of the electrons
and holes. The diffusion phenomenon is caused by concentrationgradient of donors and the acceptor atoms surrounding themetallurgical junction. As a result of this phenomenon, in thestructure fixed charges appear. They are represented by:
p n
- -
- -
- -
- -
- -
- -
- -
+ + + +
+ + + +
+ + + +
+ + + +
+ + + +
+ + + +
+
E
P neutralregion
N neutralregion
Transitionregion
Figure 1.4
a.) ions trapped in crystalline network
b.) electronsc.) holesd.) lattice structureCorrect answer a.)
17.2p
The internal electric field existing in the transition region is due to:
a.) ions trapped in crystalline networkb.) electronsc.) holesd.) lattice structureCorrect answer a.)
18.
2p
At reverse bias, the internal potential barrier is:
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a.) increasedb.) decreasedc.) unaffectedd.) sometimes increased, sometimes decreasedCorrect answer a.)
19.
2p
At forward bias, the internal potential barrier is:
a.) increasedb.) decreasedc.) unaffectedd.) sometimes increased, sometimes decreased
Correct answer b.)
20.
2p
From a formal point of view, the diode is fully described by:
a.) one characteristic equationb.) two characteristic equationsc.) a number of equations depending by the topology of the circuitd.) a number of equations depending by the operating regimeCorrect answer a.)
21.3p
From a formal point of view, a diode operating in quasi-static largesignal regime is fully described by an equation of the type:
a.) 0,,,dtvd
,,dt
dv,v,dt
id,,dt
di,iE p1m
Am
AAn
An
AA =
θθ KKK b.) ( ) 0, = A A vi E
c.) aaa vgi =
d.) 0dt
vd,,
dt
dv,v,
dt
id,,
dt
di,iE
mA
mA
AnA
nA
A =
KK
Correct answer a.)
22.3p
From a formal point of view, a diode operating in quasi-static smallsignal regime is fully described by an equation of the type::
a.) 0,,,dt
vd,,
dt
dv,v,
dt
id,,
dt
di,iE p1m
Am
AAn
An
AA =
θθ KKK
b.)( ) 0v,iE
AA
=
c.) aaa vgi =
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d.) 0dt
vd,,dt
dv,v,dt
id,,dt
di,iEm
AmAAn
AnAA =
KK
Correct answer c.)
23.
2p
The I-V characteristic of an ideal diode is:
a.)
−
= 1
v
eexpIi
A
TSA
b.)
−
= 1
ev
expIiT
ASA
c.)
+
= 1
e
vexpIi
T
ASA
d.)
+
= 1
ve
expIiA
TSA
Correct answer b.)
24.2p
The I-V characteristic of an ideal diode is:
−
= 1
e
vexpIi
T
ASA
where:
q
kT eT =
At room temperature:
a.) eT ≅2.5 mVb.) eT ≅25 mVc.) eT ≅250 mVd.) eT ≅2.5 VCorrect answer b.)
25.1p
Figure 1.5 represents the static characteristic of a diode.
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IS
VBR
vA
iA
Vγ
1.
4.2.
3.
Figure 1.5
“IS” is:
a.) half-wave rectified average currentb.) peak value of the current
c.) saturation currentd.) full-wave rectified average currentCorrect answer b.)
26.
1p
Figure 1.5 represents the static characteristic of a diode. Vγ is:
IS
VBR
vA
iA
Vγ
1.
4.2.
3.
Figure 1.5
a.) breakdown voltageb.) built-in voltagec.) half-wave rectified average voltaged.) full-wave rectified average voltageCorrect answer b.)
27.1p
Figure 1.5 represents the static characteristic of a diode. VBR is:
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IS
VBR
vA
iA
Vγ
1.
4.2.
3.
Figure 1.5
a.) breakdown voltageb.) built-in voltagec.) half-wave rectified average voltage
d.) full-wave rectified average voltageCorrect answer a.)
28.1p
Figure 1.5 represents the static characteristic of a diode. With the"1" was noted:
IS
VBR
vA
iA
Vγ
1.
4.2.
3.
Figure 1.5
a.) breakdown regionb.) cut-off region – reverse biasc.) cut-off region – forward biasd.) conduction regionCorrect answer a.)
29.
1p
Figure 1.5 represents the static characteristic of a diode. With the
"2" was noted:
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IS
VBR
vA
iA
Vγ
1.
4.2.
3.
Figure 1.5
a.) breakdown regionb.) cut-off region – reverse biasc.) cut-off region – forward bias
d.) conduction regionCorrect answer b.)
30.
1p
Figure 1.5 represents the static characteristic of a diode. With the
"3" was noted:
IS
VBR
vA
iA
Vγ
1.
4.2.
3.
Figure 1.5
a.) breakdown regionb.) cut-off region – reverse biasc.) cut-off region – forward biasd.) conduction regionCorrect answer c.)
31.
1p
Figure 1.5 represents the static characteristic of a diode. With the
"4" was noted:
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IS
VBR
vA
iA
Vγ
1.
4.2.
3.
Figure 1.5
a.) breakdown regionb.) cut-off region – reverse biasc.) cut-off region – forward bias
d.) conduction regionCorrect answer d.)
32.2p
Figure 1.6 shows a possible linearization of the characteristic inFigure 1.5 and it is called “zero order model” (Mathematically
idealized diode).
IS
VBR
vA
iA
Vγ
1.
4.2.
3.
vA
iA
Zero order model Real Characteristic
Figure 1.5 Figure 1.6Under this approximation the equivalent circuit of the diode is:a.)
b.)
c.)
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d.)
Correct answer d.)
33.
2p
Figure 1.6 shows a possible linearization of the characteristic in
Figure 1.5 and it is called “zero order model” (Mathematicallyidealized diode). According to this approximation, a diode operatingin conduction region behaves as:
IS
VBR
vA
iA
Vγ
1.
4.2.
3.
vA
iA
Zero order model Real Characteristic
Figure 1.5 Figure 1.6a.) a resistorb.) an open circuitc.) an short circuitd.) a switchCorrect answer c.)
34.2p
Figure 1.6 shows a possible linearization of the characteristic inFigure 1.5 and it is called “zero order model” (Mathematically
idealized diode). According to this approximation, a diode operating
in cut-off region behaves as
IS
VBR
vA
iA
Vγ
1.
4.2.
3.
vA
iA
Zero order model Real Characteristic
Figure 1.5 Figure 1.6a.) a resistorb.) an open circuitc.) an short circuitd.) a switchCorrect answer a.)
35. Avalanche multiplication occurs at:
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3pa.) high voltages in case of weakly doped junctionsb.) low voltages in case of weakly doped junctionsc.) high voltages in case of strong doped junctionsd.) low voltages in case of strong doped junctionsCorrect answer a.)
36.3p
Tunneling occurs at:
a.) high voltages in case of weakly doped junctionsb.) low voltages in case of weakly doped junctionsc.) high voltages in case of strong doped junctionsd.) low voltages in case of strong doped junctionsCorrect answer d.)
37.
2p
Figure 1.7 shows the static characteristic of a Zener diode. It must
operates:
IZM
IZm
VZ vZ
iZ
Figure 1.7
a.) in breakdown regionb.) in cut-off region reverse biasc.) in cut-off region forward biasd.) conduction regionCorrect answer a.)
38.2p
Figure 1.7 shows the static characteristic of a Zener diode. Thecurrent flowing through the diode must satisfy the condition:
IZM
IZm
VZ vZ
iZ
Figure 1.7a.)
Mm ZZZIiI ≤≥
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b.) Mm ZZZ IiI ≤≤ c.)
Mm ZZZIiI ≥≥
d.)Mm ZZZ
IiI ≥≤
Correct answer b.)
39.2p
In real situations there are certain limitations to avoid the destructionof a rectifier diode. The most common limitations are:a.) IFM and VBR b.) IZM and VZ c.) IFM and VZ d.) IZM and VBR Correct answer a.)
40.
2p
In real situations there are certain limitations to avoid the destruction
of a Zener diode. The most common limitations are:a.) IFM and VBR b.) IZM and VZ c.) IFM and VZ d.) IZM and VBR Correct answer b.)
41.
4p
The value of the current IA flowing through the diode is (see figure
1.8):
Figure 1.8
a.) mA4IA ≅ b.) mA4IA −≅ c.) mA0IA ≅ d.) mA2IA ≅ Correct answer c.)
42.4p The value of the drop voltage VA across the diode is (see figure 1.8):
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Figure 1.8
a.) V10VA −= b.) V8VA −= c.) V8VA = d.) V10VA = Correct answer b.)
43.3p
Small signal condition for a semiconductor diode is satisfied if:
a.) the signal across the diode is less than 2.5 mVb.) the signal across the diode is less than 10 mV c.) the signal across the diode is less than 25 mV d.) the signal across the diode is less than 100 mV Correct answer b.)
44.
3p
Small signal conductance of semiconductor diode has the value:
a.) [ ] [ ]mAI25mSg Aa = b.) [ ] [ ]mAI5.2mSg Aa =
c.) [ ] [ ]mAI4mSg Aa = d.) [ ] [ ]mAI40mSg Aa = Correct answer d.)
45.
3p
The mathematical model of a semiconductor diode that operates
under quasi-static small signal regime is:a.) aaa vgi =
b.)
−
= 1
e
vexpIi
T
ASA
c.) 1−= aaa vgi
d.)
=
T
ASA e
vexpIi
Correct answer a.)
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46.3p
Equivalent circuit of a semiconductor diode that works under quasi-static small signal regime is:
a.)
b.)
c.)
d.)
Correct answer b.)
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Chapter 2
Rectifiers
1.
1p
Figure 2.1 shows:
Figure 2.1 a.) a half wave rectifierb.) a full wave rectifierc.) a bridge rectifierd.) a peak rectifierCorrect answer a.)
2.1p
Figure 2.1 shows a half wave rectifier. With “Tr” was noted:
Figure 2.1 a.) the load resistorb.) the non-linear element, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer c.)
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3.
1p
Figure 2.1 shows a half wave rectifier. With “RL” was noted:
Figure 2.1 a.) the load resistorb.) the non-linear element, providing the effect of recovery
c.) the power transformerd.) the filtering elementCorrect answer d.)
4.
1p
Figure 2.1 shows a half wave rectifier. With “D” was noted:
Figure 2.1 a.) the load resistorb.) the non-linear element, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer b.)
5.
1p
Figure 2.1 shows a half wave rectifier. With “Vp” was noted:
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Figure 2.1 a.) the amplitude value of the AC voltage drop across the load resistorb.) the effective value of the AC voltage drop across the load resistorc.) the instantaneous value of the AC voltage drop across the load
resistord.) the total value of the voltage drop across the load resistor
Correct answer c.)
8.1p
Figure 2.1 shows a half wave rectifier. With “iL” was noted:
Figure 2.1 a.) the amplitude value of the AC load currentb.) the effective value of the AC load currentc.) the instantaneous value of the AC load currentd.) the total value of the load currentCorrect answer d.)
9.1p
See figure 2.1. Diode “D” is conducting:
Figure 2.1
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a.) on the positive half waveb.) on the negative half wavec.) a relatively small time interval of the positive half waved.) a relatively small time interval of the negative half waveCorrect answer a.)
10.
2p
Figure 2.2 shows the wave forms of a:
Vs
t
t
Vs
vL
π 5π 4π 3π 2
VL
Figure 2.2
a.) half wave rectifierb.) full wave rectifierc.) bridge rectifierd.) peak rectifierCorrect answer a.)
11.
4p
See figure2.1. The DC component of the drop voltage across the load
resistor is:
Figure 2.1
a.)π
= sLV2
V
b.)π
=2
VV sL
c.) π=s
L
V
V
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d.)π
= sL V2V
Correct answer c.)
12.1p
Figure 2.3 shows:
Figure 2.3 a.) a half wave rectifierb.) a full wave rectifierc.) a bridge rectifierd.) a peak rectifierCorrect answer b.)
13.
1p
Figure 2.3 shows a full wave rectifier. With “Tr” was noted:
Figure 2.3 a.) the load resistorb.) the non-linear element, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer c.)
14.
1p
Figure 2.3 shows a full wave rectifier. With “RL” was noted:
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Figure 2.3 a.) the load resistorb.) the non-linear element, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer a.)
15.
1p
Figure 2.3 shows a full wave rectifier. With “D1” and “D2” werenoted:
Figure 2.3 a.) the load resistorb.) the non-linear elements, providing the effect of recovery
c.) the power transformerd.) the filtering elementCorrect answer b.)
16.1p
Figure 2.3 shows a full wave rectifier. With “Vp” was noted:
Figure 2.3 a.) the amplitude value of the AC voltage applied across the primary ofthe power transformer
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b.) the effective value of the AC voltage applied across the primary ofthe power transformerc.) the instantaneous value of the AC voltage applied across the
primary of the power transformerd.) the total value of the voltage applied across the primary of the
power transformerCorrect answer a.)
17.1p
Figure 2.3 shows a full wave rectifier. With “Vs” was noted:
Figure 2.3 a.) the amplitude value of the AC voltage drop across the secondary of
the power transformerb.) the effective value of the AC voltage drop across the secondary of
the power transformerc.) the instantaneous value of the AC voltage drop across the
secondary of the power transformerd.) the total value of the voltage drop across the secondary of the
power transformer
Correct answer a.)
18.
1p
Figure 2.3 shows a full wave rectifier. With “vL” was noted:
Figure 2.3 a.) the amplitude value of the AC voltage drop across the load resistor
b.) the effective value of the AC voltage drop across the load resistorc.) the instantaneous value of the AC voltage drop across the loadresistor
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d.) the total value of the voltage drop across the load resistorCorrect answer d.)
19.
1p
Figure 2.3 shows a full wave rectifier. With “iL” was noted:
Figure 2.3
a.) the amplitude value of the AC load currentb.) the effective value of the AC load currentc.) the instantaneous value of the AC load currentd.) the total value of the load currentCorrect answer d.)
20.2p
Figure 2.3 shows a full wave rectifier. In normal operation:
Figure 2.3 a.) on the positive half wave D1 and D2 diodes operate in “on” stateb.) on the positive half wave D1 diode operates in “on” state and D2
diode operates in “off” statec.) on the positive half wave D2 diode operates in “on” state and D1
diode operates in “off” stated.) on the positive half wave D1 and D2 diodes operate in “off” stateCorrect answer b.)
21.
2p
Figure 2.3 shows a full wave rectifier. In normal operation:
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Figure 2.3 a.) on the negative half wave D1 and D2 diodes operate in “on” stateb.) on the negative half wave D1 diode operates in “on” state and D2
diode operates in “off” statec.) on the negative half wave D2 diode operates in “on” state and D1
diode operates in “off” state
d.) on the negative half wave D1 and D2 diodes operate in “off” stateCorrect answer c.)
22.
2p
Figure 2.4 shows the wave forms of a:
Vs
t ω
t ω
Vs
vL
π π 5π 4π 3π 2
VL
Figure 2.4
a.) half wave rectifierb.) full wave rectifierc.) clipping circuitd.) peak rectifierCorrect answer b.)
23.
4p
See figure2.3. The DC component of the voltage drop across the load
resistor is:
Figure 2.3
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a.)π
= sL V2V
b.)π
=2V
V sL
c.)π
= sLV
V
d.)π
= sLV
2V
Correct answer a.)
24.
1p
Figure 2.5 shows:
Figure 2.5 a.) a half wave rectifierb.) a full wave rectifierc.) a bridge rectifierd.) a peak rectifierCorrect answer c.)
25
1p
Figure 2.5 shows a bridge rectifier. With “Tr” was noted:
Figure 2.5 a.) the load resistor
b.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering element
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Correct answer c.)
26.1p
Figure 2.5 shows a bridge rectifier. With “RL” was noted:
Figure 2.5 a.) the load resistor
b.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer a.)
27.
1p
Figure 2.5 shows a bridge rectifier. With “D1, D2, D3 and D4” was
noted:
Figure 2.5 a.) the load resistorb.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer a.)
28.1p
Figure 2.5 shows a bridge rectifier. With “Vp” was noted:
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Figure 2.5 a.) the amplitude value of the AC voltage applied across the primary of
the power transformerb.) the effective value of the AC voltage applied across the primary of
the power transformerc.) the instantaneous value of the AC voltage applied across the
primary of the power transformerd.) the total value of the voltage applied across the primary of thepower transformer
Correct answer a.)
29.
1p
Figure 2.5 shows a bridge rectifier. With “Vs” was noted:
Figure 2.5 a.) the amplitude value of the AC voltage drop across the secondary of
the power transformerb.) the effective value of the AC voltage drop across the secondary of
the power transformerc.) the instantaneous value of the AC voltage drop across the
secondary of the power transformerd.) the total value of the voltage drop across the secondary of the
power transformerCorrect answer b.)
30.
2p
Figure 2.5 shows a bridge rectifier. In normal operation:
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Figure 2.5 a.) on the positive half wave D1, D2, D3, and D4, diodes operate in “on”
stateb.) on the positive half wave D1 and D3 diodes operate in “on” state
and D2 and D4 diodes operates in “off” statec.) on the positive half wave D2 and D4 diodes operate in “on” state
and D1 and D3 diodes operate in “off” stated.) on the positive half wave D1, D2, D3, and D4 diodes operate in “off”state
Correct answer b.)
31.2p
Figure 2.5 shows a bridge rectifier. In normal operation:
Figure 2.5 a.) on the negative half wave D1, D2, D3, and D4, diodes operate in
“on” stateb.) on the negative half wave D1 and D3 diodes operate in “on” state
and D2 and D4 diodes operates in “off” statec.) on the negative half wave D2 and D4 diodes operate in “on” state
and D1 and D3 diodes operate in “off” stated.) on the negative half wave D1, D2, D3, and D4 diodes operate in “off”
stateCorrect answer c.)
32.4p
See figure2.5. The DC component of the voltage drop across the loadresistor is:
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Figure 2.5
a.)π
= sLV2
V
b.)π
=2
VV sL
c.) π=sL VV
d.)π
= sLV
2V
Correct answer a.)
33.
1p
Figure 2.6 shows::
Figure 2.6 a.) a half wave rectifierb.) a full wave rectifierc.) a bridge rectifierd.) a peak rectifierCorrect answer d.)
34.
1p
Figure 2.6 shows a peak rectifier. With “Tr” was noted:
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Figure 2.6 a.) the load resistorb.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer c.)
35.1p
Figure 2.6 shows a peak rectifier. With “RL” was noted:
Figure 2.6 a.) the load resistorb.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer a.)
36.1p
Figure 2.6 shows a peak rectifier. With “D” was noted:
Figure 2.6 a.) the load resistor
b.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering element
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Correct answer b.)
37.1p
Figure 2.6 shows a peak rectifier. With “C” was noted:
Figure 2.6 a.) the load resistorb.) the non-linear elements, providing the effect of recovery
c.) the power transformerd.) the filtering elementCorrect answer d.)
38.
1p
Figure 2.6 shows a peak rectifier. With “Vp” was noted:
Figure 2.6 a.) the amplitude value of the AC voltage applied across the primary ofthe power transformer
b.) the effective value of the AC voltage applied across the primary ofthe power transformer
c.) the instantaneous value of the AC voltage applied across theprimary of the power transformer
d.) the total value of the voltage applied across the primary of thepower transformer
Correct answer a.)
39.
1p
Figure 2.6 shows a peak rectifier. With “Vs” was noted:
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Figure 2.6 a.) the amplitude value of the AC voltage drop across the secondary of
the power transformerb.) the effective value of the AC voltage drop across the secondary of
the power transformerc.) the instantaneous value of the AC voltage drop across the
secondary of the power transformer
d.) the total value of the voltage drop across the secondary of thepower transformer
Correct answer b.)
40.
1p
Figure 2.6 shows a peak rectifier. With “vL” was noted:
Figure 2.6
a.) the amplitude value of the AC voltage drop across the load resistorb.) the effective value of the AC voltage drop across the load resistorc.) the instantaneous value of the AC voltage drop across the load
resistord.) the total value of the voltage drop across the load resistorCorrect answer d.)
41.1p
Figure 2.6 shows a peak rectifier. With “iL” was noted:
Figure 2.6 a.) the amplitude value of the AC load current
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b.) the effective value of the AC load currentc.) the instantaneous value of the AC load currentd.) the total value of the load currentCorrect answer d.)
42.
1p
See figure 2.6. Diode “D” is conducting:
Figure 2.6 a.) on the positive half waveb.) on the negative half wavec.) a relatively small time interval of the positive half waved.) a relatively small time interval of the negative half waveCorrect answer c.)
43.2p
Figure 2.7 shows the wave forms of a:
V
VL Vl
Vs
tT
τ
Figure 2.7
a.) half wave rectifierb.) full wave rectifierc.) clipping circuitd.) peak rectifierCorrect answer d.)
44.
4p
See figure2.6. The DC component of the voltage drop across the load
resistor:
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Figure 2.6 a.) increases with increase in load currentb.) decreases with increase in load currentc.) does not depend on the current value of the loadd.) decreases with decrease in load currentCorrect answer b.)
45.4p
See figure2.6. The AC component of the voltage drop across the loadresistor:
Figure 2.6 a.) increases with increase in load currentb.) decreases with increase in load currentc.) does not depend on the current value of the load
d.) increases with decrease in load currentCorrect answer a.)
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Chapter 3
Bipolar Junction Transistor
1.
3p
Consider a „pnp” or a „npn” structure. According to general
definition of a Bipolar Junction Transistor, this type of structure
behaves like a Bipolar Junction Transistor if:a.) the base is very narrow (only)b.) the emitter is heavily doped (only)c.) the base is very narrow and the emitter is heavily dopedd.) the base is very narrow or the emitter is heavily dopedCorrect answer c.)
2.2p
The emitter of a Bipolar Junction Transistor:
a.) is intended to "collect" mainstream carriers flowing through thestructure
b.) is intended to "control" mainstream carriers flowing through the
structurec.) is intended to "generate" mainstream carriers flowing through thestructure
d.) has no roleCorrect answer c.)
3.2p
The collector of a Bipolar Junction Transistor:
a.) is intended to "collect" mainstream carriers flowing through thestructure
b.) is intended to "control" mainstream carriers flowing through thestructure
c.) is intended to "generate" mainstream carriers flowing through the
structured.) has no roleCorrect answer c.)
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4.
2p
The base of a Bipolar Junction Transistor:
a.) is intended to "collect" mainstream carriers flowing through thestructure
b.) is intended to "control" mainstream carriers flowing through thestructure
c.) is intended to "generate" mainstream carriers flowing through thestructure
d.) has no roleCorrect answer b.)
5.
1p
Figure 3.1 shows:
C
E
B
Figure 3.1
a.) a “n” channel field effect transistorb.) a “p” channel field effect transistorc.) a “pnp” bipolar junction transistord.) a “npn” bipolar junction transistorCorrect answer d.)
6.
1p
Figure 3.2 shows:
C
E
B
Figure 3.2 a.) a “n” channel field effect transistorb.) a “p” channel field effect transistorc.) a “pnp” bipolar junction transistor
d.) a “npn” bipolar junction transistorCorrect answer c.)
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7.2p
A bipolar junction transistor operating in cut-off mode behaves as:
a.) a current controlled sourceb.) a short circuitc.) an open circuitd.) a switchCorrect answer c.)
8.
2p
A bipolar junction transistor operating in saturation mode behaves
as: a.) a current controlled sourceb.) a short circuitc.) an open circuit
d.) a switchCorrect answer b.)
9.
2p
A bipolar junction transistor operating in active mode behaves as:
a.) a current controlled sourceb.) a short circuitc.) an open circuitd.) a switchCorrect answer a.)
10.
3p
An approximate mathematical model of a bipolar junction transistor
operating in cut-off mode is:a.) 0iC ≅ and 0iB ≅ b.) 0vBC ≅ and 0vBE ≅ c.)
BC ii β≅ and γ ≅ VvBE d.)
EC ii α≅ and γ ≅ VvBE
Correct answer a.)
11.
3p
An approximate mathematical model of a bipolar junction transistor
operating in saturation mode is: a.) 0iC ≅ and 0iB ≅ b.) 0vBC ≅ and 0vBE ≅
c.) BC ii β≅ and γ ≅ VvBE d.)EC ii α≅ and γ ≅ VvBE
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Correct answer b.)
12.2p
If a bipolar junction transistor operates in active mode:
a.) emitter-base junction is “on” and collector-base junction is “off”b.) emitter-base junction is “off” and collector-base junction is “on”c.) emitter-base junction is “off” and collector-base junction is “off”d.) emitter-base junction is “on” and collector-base junction is “on”Correct answer a.)
13.
2p
If a bipolar junction transistor operates in saturation mode:
a.) emitter-base junction is “on” and collector-base junction is “off”b.) emitter-base junction is “off” and collector-base junction is “on”c.) emitter-base junction is “off” and collector-base junction is “off”d.) emitter-base junction is “on” and collector-base junction is “on”Correct answer d.)
14.
2p
If a bipolar junction transistor operates in cut-off mode:
a.) emitter-base junction is “on” and collector-base junction is “off”b.) emitter-base junction is “off” and collector-base junction is “on”c.) emitter-base junction is “off” and collector-base junction is “off”d.) emitter-base junction is “on” and collector-base junction is “on”Correct answer c.)
15.
2p
If a bipolar junction transistor operates in reverse active mode:
a.) emitter-base junction is “on” and collector-base junction is “off”b.) emitter-base junction is “off” and collector-base junction is “on”c.) emitter-base junction is “off” and collector-base junction is “off”d.) emitter-base junction is “on” and collector-base junction is “on”Correct answer b.)
16.1p
A bipolar junction transistor works as a simple transistor amplifierif:a.) it operates in active modeb.) it operates in saturation mode
c.) it operates in cut-off mode d.) it operates in reverse active mode Correct answer a.)
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17.
3p
If a transistor operates in active mode emitter-base junction is “on”
and collector-base junction is “off”. In this situation the so called”transistor effect” occurs. It means:a.) that a current of relatively high value is flowing through the emitter
junctionb.) that a current of relatively small value is flowing through the
emitter junction c.) that a current of relatively high value is flowing through the
collector junctiond.) that a current of relatively small value is flowing through the
collector junction Correct answer c.)
18.
3p
If a transistor operates in active mode the so called ”transistor
effect” occurs. It means that a current of relatively high value isflowing through the collector junction which is in “off” state. The
explanation lies in the fact that: a.) there is a tunneling effect into the baseb.) there is a tunneling effect into the emitter c.) the base is very narrow and so the mobile carriers injected by the
emitter into the base may reach the collector layerd.) there is a tunneling effect into the collector Correct answer c.)
19.1p
Figure 3.3 shows:
iB
iC
Input
Output
vBE
vCE
Figure 3.3
a.) common emitter connectionb.) common base connection c.) common collector connectiond.) common drain connection Correct answer a.)
20.
1p
Figure 3.4 shows:
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iB
iE
Input
Output
vBC
vEC
Figure 3.4
a.) common emitter connectionb.) common base connection c.) common collector connectiond.) common drain connection Correct answer c.)
21.
1p
Figure 3.5 shows:
iC iE
Input OutputvEB vCB
Figure 3.5
a.) common emitter connectionb.) common base connection c.) common collector connectiond.) common drain connection Correct answer b.)
22.2p In common emitter connection:
a.) input signals are:* base-emitter voltage* base current
output signals are:* collector-emitter voltage* collector current
b.) input signals are:* base-collector voltage* base current
output signals are:* emitter-collector voltage
* emitter currentc.) input signals are:* emitter-base voltage
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* emitter currentoutput signals are:* collector-base voltage* collector current
d.) input signals are:* base-emitter voltage* base current
output signals are:* emitter-collector voltage* emitter current
Correct answer a.)
23.
2p
In common collector connection:
a.) input signals are:* base-emitter voltage* base current
output signals are:* collector-emitter voltage* collector current
b.) input signals are:* base-collector voltage* base current
output signals are:* emitter-collector voltage* emitter current
c.) input signals are:* emitter-base voltage* emitter current
output signals are:* collector-base voltage* collector current
d.) input signals are:* base-emitter voltage* base current
output signals are:* emitter-collector voltage* emitter current
Correct answer b.) 24. In common base connection:
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2pa.) input signals are:
* base-emitter voltage* base current
output signals are:* collector-emitter voltage* collector current
b.) input signals are:* base-collector voltage* base current
output signals are:* emitter-collector voltage* emitter current
c.) input signals are:* emitter-base voltage* emitter current
output signals are:* collector-base voltage* collector current
d.) input signals are:* base-emitter voltage* base current
output signals are:* emitter-collector voltage* emitter current
Correct answer c.)
25.3p
Under quasi-static large signal regime, the bipolar junctiontransistor is fully described by two and only two equations, calledstatic characteristic equations, or in short, static characteristics.
Typically these are:a.) ( )BCBCC i,vii = and ( )CEBEBB v,vii = b.) ( )BCECC i,vii = and ( )CEBCBB v,vii = c.) ( )BCECC i,vii = and ( )CEBEBB v,vii = d.) ( )BCCC i,iii = and ( )CEBEBB v,vii = Correct answer c.)
26.3p
The output static characteristic is:
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a.) ( ) .constiCECC Bvii == b.) ( ) .constvBCC CEiii ==
c.) ( ) .constvBEBB CEvii ==
d.) ( ) .constvCEBB BEvii ==
Correct answer b.)
27.
3p
The input static characteristic is:
a.) ( ) .constiCECC Bvii ==
b.) ( ) .constvBCC CEiii == c.) ( ) .constvBEBB CEvii ==
d.) ( ) .constvCEBB BEvii ==
Correct answer c.)
28.
1p
Figure 3.6 shows the output static characteristic “1”is denoted:
v CE
i C
i B1
i B2
i B3
i B4
3
v CB =0
1
2
Figure 3.6
a.) active regionb.) saturation regionc.) cut-off regiond.) reverse active regionCorrect answer b.)
29.1p
Figure 3.6 shows the output static characteristic “2”is denoted:
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v CE
i C
i B1
i B2
i B3
i B4
3
v CB =0
1
2
Figure 3.6
a.) active regionb.) saturation regionc.) cut-off regiond.) reverse active regionCorrect answer c.)
30.
1p
Figure 3.6 shows the output static characteristic “3”is denoted:
v CE
i C
i B1
i B2
i B3
i B4
3
v CB =0
1
2
Figure 3.6a.) active regionb.) saturation regionc.) cut-off regiond.) reverse active regionCorrect answer a.)
31. Figure 3.7 shows:
vBE
iB
vCE1
vCE2>vCE1
γV
Figure 3.7
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a.) the output static characteristicb.) the input static characteristic c.) the transfer static characteristicd.) the transfer dynamic characteristic Correct answer b.)
32.
3p
Equivalent circuit of a transistor that operates in cut-off mode is
shown in figure noted:a.) B
E
C
vBE vCE
b.) B
E
CiCiB
c.)
B
E
C
βFiBvBE
iB
d.)
B
E
C
βFiBIS / βF
iB
Correct answer a.)
33.3p Equivalent circuit of a transistor that operates in saturation mode isshown in figure noted: a.) B
E
C
vBE vCE
b.) B
E
CiCiB
c.)
B
E
C
βFiBvBE
iB
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d.) B
E
C
βFiBIS / βF
iB
Correct answer b.)
34.3p
The so called “zero order model” of bipolar junction transistoroperating in active mode (large signal quasi-static regime) is:a.) .constvBE ≅ and EC ii ≅ b.) γ ≅ VvBE and BC ii β≅ c.)
β=
T
BE
F
SB e
vexp
Ii and
=
T
BESC e
vexpIi
d.) γ ≅ VvBE and CB ii β≅
Correct answer a.)
35.
3p
The so called “first order model” of bipolar junction transistor
operating in active mode (large signal quasi-static regime) is: a.) .constvBE ≅ and EC ii ≅ b.) γ ≅ VvBE and BC ii β≅ c.)
β=
T
BE
F
SB e
vexp
Ii and
=
T
BESC e
vexpIi
d.) γ ≅ VvBE and CB ii β≅
Correct answer b.)
36.3p
The so called “second order model” of bipolar junction transistoroperating in active mode (large signal quasi-static regime) is: a.) .constvBE ≅ and EC ii ≅ b.) γ ≅ VvBE and BC ii β≅ c.)
β=
T
BE
F
SB e
vexp
Ii and
=
T
BESC e
vexpIi
d.) γ ≅ VvBE and CB ii β≅
Correct answer c.)
37.
3p
Assume a bipolar junction transistor operating under quasi-static
large signal regime in active region. The equivalent circuit of such a
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transistor related to “first order model” is:a.) B
E
C
vBE vCE
b.) B
E
CiCiB
c.)
B
E
C
βFiBvBE
iB
d.)
B
E
CβFiBIS / βF
iB
Correct answer c.)
38.
3p
Assume a bipolar junction transistor operating under quasi-static
large signal regime in active region. The equivalent circuit of such atransistor related to “second order model” is: a.) B
E
C
vBE vCE
b.) B
E
CiCiB
c.)
B
E
C
βFiBvBE
iB
d.)
B
E
C
βFiBIS / βF
iB
Correct answer d.)
39.3p See figure 3.8. “1” is denoted:
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1.
IB=0
vCE
iC 2.
Figure 3.8
a.) primer breakdownb.) secondary breakdown c.) thermal runawayd.) tunneling phenomenon Correct answer a.)
40.3p
See figure 3.8. “2” is denoted:
1.
IB=0
vCE
iC 2.
Figure 3.8
a.) primer breakdownb.) secondary breakdown c.) thermal runaway
d.) tunneling phenomenon Correct answer b.)
41.3p
Due to thermal runaway phenomenon:
a.) “iC” increases uncontrollably when ambient temperature increasesb.) “iC” decreases uncontrollably when ambient temperature increases c.) “iC” increases uncontrollably when ambient temperature decreasesd.) “iC” decreases uncontrollably when ambient temperature decreases Correct answer a.)
42.
3p
Due to thermal runaway phenomenon “iC” increases uncontrollably
when ambient temperature increases: The explanation is that a
regenerative phenomenon can occur in the structure. That means:a.) decreasing of ambient temperature leads to increasing of junction
temperature. Increasing of junction temperature leads to increasing
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of collector current. On the other hand, increasing of collectorcurrent leads to increasing of junction temperature. In theseconditions a regenerative phenomenon occurs in the structure.
b.) increasing of ambient temperature leads to increasing of junctiontemperature. Increasing of junction temperature leads to increasingof collector current. On the other hand, increasing of collectorcurrent leads to increasing of junction temperature. In theseconditions a regenerative phenomenon occurs in the structure.
c.) decreasing of ambient temperature leads to decreasing of junctiontemperature. Decreasing of junction temperature leads to increasingof collector current. On the other hand, increasing of collectorcurrent leads to increasing of junction temperature. In theseconditions a regenerative phenomenon occurs in the structure.
d.) increasing of ambient temperature leads to decreasing of junctiontemperature. Decreasing of junction temperature leads to increasingof collector current. On the other hand, increasing of collectorcurrent leads to increasing of junction temperature. In theseconditions a regenerative phenomenon occurs in the structure.
Correct answer b.)
43.
3p
The voltage drop across the base-emitter junction varies with
temperature difference about:a.) 1-1.5 mV/ oCb.) 2-2.5 mV/ oC c.) 10-15 mV/ oCd.) 20-25 mV/ oC Correct answer b.)
44.1p
The operating limitations of a bipolar junction transistor arepresented in figure 3.9. With “1” was denoted:
vCE
iC
1
Saturationregion
Cut-offregion
4
3
2
Figure 3.9
a.) maximum value of the voltage collector-emitter
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47.
1p
The operating limitations of a bipolar junction transistor are
presented in figure 3.9. With “4” was denoted:
vCE
iC
1
Saturationregion
Cut-offregion
4
3
2
Figure 3.9a.) maximum value of the voltage collector-emitterb.) maximum value of the collector currentc.) maximum value of the power dissipationd.) safe areaCorrect answer d.)
48.3p
A possible mathematic model for a bipolar junction transistoroperating under quasi-static small signal regime is:a.)
BC ii β≅ and γ ≅ VvBE b.)
=
T
BESC e
vexpIi and
β=
T
BE
F
SB e
vexp
Ii
c.)be
mc vg
1i = andπ
=r
vi beb
d.)bemc vgi = and
π
=r
vi beb
Correct answer d.)
49.3p Assume that
T
C
BE
Cm e
I
dv
dig ≅= . The value is:
a.) gm[mS]=2.5IC[mA]b.) gm[mS]=4IC[mA] c.) gm[mS]=25IC[mA]
d.) gm[mS]=40IC[mA] Correct answer d.)
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50.3p
The relationship between mg (trans-conductance) and π r (input
resistance) is:a.) β=πrgm b.) π=β rgm c.)
mgr =βπ d.)
β=πr
gm
Correct answer a.)
51.
3p
The bias circuits of the bipolar transistor are designed to:
a.) stabilize the quiescent point only for the effects of temperatureb.) stabilize the quiescent point only for the effects scatteringparameters
c.) stabilize the quiescent point for the effects of temperature or for theeffects scattering parameters
d.) stabilize the quiescent point for the effects of temperature and forthe effects scattering parameters
Correct answer a.)
52.4p
Figure 3.10 shows a simple bias circuit.
Figure 3.10
The equivalent circuit (for quasi-static regime) of this circuit is: a.)
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b.)
c.)
d.)
Correct answer d.)
53.
4p
Figure 3.10 shows a simple bias circuit. The value of “IC” is given by:
a.)
C
BECC R
VEI
−β=
b.)
C
BECC R
VEI
+β=
c.)
B
BECC R
VEI −β=
d.)
B
BECC R
VEI
+β=
Correct answer c.)
54.4p
Figure 3.11 shows a typical bias circuit. “RE” is used for thermalstability. The mechanism by which this is accomplished is:
Figure 3.11
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a) T↑ ⇒ IC↑ ⇒ VRE ↑ ⇒ VE ↑ ⇒ VBE ↓ ⇒ IC ↓
b) T↑ ⇒ IC↓ ⇒ VRE ↑ ⇒ VE ↑ ⇒ VBE ↓ ⇒ IC ↓
c) T↑ ⇒ IC↑ ⇒ VRE ↓ ⇒ VE ↑ ⇒ VBE ↓ ⇒ IC ↓
d) T↑ ⇒ IC↑ ⇒ VRE ↑ ⇒ VE ↓ ⇒ VBE ↓ ⇒ IC ↓
where:VRE - drop voltage across RE;
VE - emitter voltage. Correct answer a.)
55.
4p
Figure 3.11 shows a typical bias circuit.
Figure 3.11
The equivalent circuit is:
a)
b)
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c)
d)
Correct answer a.)
56.4p
Figure 3.11 shows a typical bias circuit. Figure 3.12 shows theequivalent circuit. According to Kirchhoff’s theorems one obtains:
Figure 3.11 Figure 3.12
a) I=I1+βIB I2=I1+IB IB+βIB=IE EC=βIBRC+VCE+IERE -VBE=-VCE-βIBRC+I1RB1 VBE=I2RB2-IERE
b) I=I1+βIB I1=I2+IB IB+βIB=IE EC=βIBRC+VCE+IBRE -VBE=-VCE-βIBRC+I1RB1
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VBE=I2RB2-IERE
c) I=I1+βIB I1=I2+IB IB+βIB=IE EC=βIBRC+VBE+IERE -VBE=-VCE-βIBRC+I1RB1 VBE=I2RB2-IERE
d) I=I1+βIB I1=I2+IB IB+βIB=IE
EC=βIBRC+VCE+IERE -VBE=-VCE-βIBRC+I1RB1 VBE=I2RB2-IERE
Correct answer d.)
57.
4p
Figure 3.11 shows a typical bias circuit.
Figure 3.11
Appling Thevenin rule, the circuit may be redrawn as: a)
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b)
c)
d)
where:2B1B
2BCB RR
REE
+= and
2B1B
2B1BB RR
RRR
+=
Correct answer b.)
58.4p
Figure 3.11 shows a typical bias circuit. Figure 3.13 shows the samecircuit redrawn according to Thevenin rule.
Figure 3.11 Figure 3.13
The equivalent circuit is:
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a)
b)
c)
d)
Correct answer c.)
59.4p
Figure 3.11 shows a typical bias circuit. Figure 3.13 shows the samecircuit redrawn according to Thevenin rule. The equivalent circuit ofthis circuit is presented in figure 3.14. According to Kirchhoff’stheorems one obtains:
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Figure 3.14
a) IE=IE+βIB EC=βIBIC+VCE+IE EB-VBE=REIE+RBIB
b) IE=IB+βIC EC=βIBIC+VCE+IE EB-VBE=REIE+RBIB
c) IE=IB+βIB EC=βIBIC+VCE+IE EB-VBE=REIE+RBIB
d) IE=IB+βIB EC=βIBIC+VBE+IE EB-VBE=REIE+RBIB
where:2B1B
2B
CB RR
R
EE += and 2B1B2B1B
B RR
RR
R +=
Correct answer c.)
60.4p
Figure 3.11 shows a typical bias circuit. The value of “IC” is givenby:
Figure 3.11
a) ( )( ) EB
BEBC R1R
VEI +β+
−β=
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b) ( )( ) EB
BECC R1R
VEI+β+−β=
c) ( )( ) BE
BEBC R1R
VEI
+β+−β
=
d) ( )( ) EB
CEBC R1R
VEI
+β+−β
=
Correct answer a.)
61.3p
One of the mathematical models for quasi-static small signal regimeof a bipolar transistor is:a)
BC ii β≅ and γ ≅ VvBE b)
= TBE
SC e
vexpIi and
β= TBE
F
SB e
vexp
Ii
c)be
mc vg
1i = and
π
=r
vi beb
d)bc ii β= and
π
=r
vi beb
Correct answer d.)
62.2p
One of the mathematical models for quasi-static small signal regimeof a bipolar transistor is:
bc ii β= and
π
=r
vi beb
According to this mathematical model the equivalent is:
a)
b)
c)
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d)
Correct answer a.)
63.
2p
One of the mathematical models for quasi-static small signal regime
of a bipolar transistor is:
bemc vgi = andπ
=r
vi beb
According to this mathematical model the equivalent is: a)
b)
c)
d)
Correct answer b.)
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Chapter 4
Bipolar Junction TransistorFundamental Circuits
1.1p
Schematic diagram of a common emitter stage is shown in figure:
a.)
b.)
c.)
d.)
Correct answer a.)
2.1p
Schematic diagram of a common collector stage is shown in figure:
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a.)
b.)
c.)
d.)
Correct answer b.)
3.1p
Schematic diagram of a common base stage is shown in figure:
a.)
b.)
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c.)
d.)
Correct answer c.)
4.
2p
Schematic diagram of a common emitter stage is shown in figure 4.1
Bipolar junction transistor ”T” is operating in cut-off region if:
Figure 4.1
a.) vIN
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6.2p
Schematic diagram of a common emitter stage is shown in figure 4.1 Bipolar junction transistor ”T” is operating in saturation region if:
Figure 4.1
a.) vIN
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b.) CIN E,Vv γ ∈ c.) CIN Ev = d.) γ −∞−∈ V,vIN
Correct answer b.)
9.
2p
Schematic diagram of a common collector stage is shown in figure 4.2. Bipolar junction transistor ”T” is operating in saturation regionif:
Figure 4.2
a.) ( )γ
V v IN ,∞−∈ b.)
CIN E,Vv γ ∈ c.) CIN Ev = d.) ( )γ −∞−∈ V,vIN Correct answer c.)
10.2p
Schematic diagram of a common base stage is shown in figure 4.3. Bipolar junction transistor ”T” is operating in cut-off region if:
Figure 4.3
a.)BEsatIN vv −≅
b.) γ −−∈ V,vv BEsatIN c.) ∞+−∈ γ ,VvIN d.) [ )∞+−∈ ,vv BEsatIN Correct answer c.)
11.2p Schematic diagram of a common base stage is shown in figure 4.3. Bipolar junction transistor ”T” is operating in active region if:
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Figure 4.3
a.)BEsatIN vv −≅
b.) ( )γ −−∈ V,vv BEsatIN c.) ∞+−∈ γ ,VvIN d.) [ )∞+−∈ ,vv BEsatIN Correct answer b.)
12.2p
Schematic diagram of a common base stage is shown in figure 4.3. Bipolar junction transistor ”T” is operating in saturation region if:
Figure 4.3
a.)BEsatIN vv −≅
b.) γ −−∈ V,vv BEsatIN c.) ∞+−∈ γ ,VvIN d.) [ )∞+−∈ ,vv BEsatIN
Correct answer a.)
13.2p
Schematic diagram of a common emitter stage is shown in figure 4.1.
Figure 4.1
Bipolar junction transistor ”T” is operating in cut-off region if vIN
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b.)
c.)
d.)
Correct answer b.)
15.
3p
Schematic diagram of a common base stage is shown in figure 4.3.
Figure 4.3
Bipolar junction transistor, ”T” is operating in cut-off region if +∞−∈ γ ,VvIN . In these circumstances, the equivalent circuit (quasi-
static large signal regime) is:a.)
b.)
c.)
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d.)
Correct answer c.)
16.
2p
Schematic diagram of a common emitter stage is shown in figure 4.1.
Figure 4.1
Bipolar junction transistor, ”T” is operating in active region if Vγ γγ γ
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17.
2p
Schematic diagram of a common collector stage is shown in figure 4.2.
Figure 4.2
Bipolar junction transistor, ”T” is operating in active region if vIN∈[ γ V , EC). In these circumstances, the equivalent circuit (quasi-
static large signal regime) is:
a.)
b.)
c.)
d.)
Correct answer b.)
18.
2p
Schematic diagram of a base collector stage is shown in figure 4.3.
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Figure 4.3
Bipolar junction transistor, ”T” is operating in active region if
γ −−∈ V,vv BEsatIN . In these circumstances, the equivalent circuit
(quasi-static large signal regime) is:a.)
b.)
c.)
d.)
Correct answer c.)
19.
2p
Schematic diagram of a common emitter stage is shown in figure 4.1.
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Figure 4.1
Bipolar junction transistor, ”T” is operating in saturation region if vIN≈vBEsat. In these circumstances, the equivalent circuit (quasi-staticlarge signal regime) isa.)
b.)
c.)
d.)
Correct answer a.)
20.
2p
Schematic diagram of a common collector stage is shown in figure 4.2.
Figure 4.2
Bipolar junction transistor, ”T” is operating in saturation region if vIN=EC. In these circumstances, the equivalent circuit (quasi-staticlarge signal regime) is:
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a.)
b.)
c.)
d.)
Correct answer b.)
21.
2p
Schematic diagram of a common base stage is shown in figure 4.3.
Figure 4.3
Bipolar junction transistor, ”T” is operating in saturation region if
BEsatIN vv −≅ . In these circumstances, the equivalent circuit (quasi-static large signal regime) is:a.)
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b.)
c.)
d.)
Correct answer c.)
22.
4p
Schematic diagram of a common emitter stage is shown in figure 4.1.If the bipolar junction transistor ”T” is operating in cut-off region,the output voltage is:
Figure 4.1
a.) vO=EC b.)
satCEOvv ≈
c.) vO=0d.)
satBEOvv ≈
Correct answer a.)
23.
4p
Schematic diagram of a common collector stage is shown in figure 4.2. If the bipolar junction transistor ”T” is operating in cut-off
region, the output voltage is:
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Figure 4.2
a.) vO=EC b.)
satCEOvv ≈
c.) vO=0d.)
satBEOvv ≈
Correct answer c.)
24.
4p
Schematic diagram of a common base stage is shown in figure 4.3. Ifthe bipolar junction transistor ”T” is operating in cut-off region, theoutput voltage is:
Figure 4.3
a.) vO=EC b.)
satCEOvv ≈
c.) vO=0
d.) satBEO vv ≈ Correct answer a.)
25.
4p
Schematic diagram of a common emitter stage is shown in figure 4.1.If the bipolar junction transistor ”T” is operating in active region, theoutput voltage is:
Figure 4.1
a.)
−−=T
INSCCO e
vexpIREv
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b.) vO=vIN-vBE c.) 0vO ≅ d.)
T
INCSCO e
vexpRIEv −=
Correct answer d.)
26.4p
Schematic diagram of a common collector stage is shown in figure 4.2. If the bipolar junction transistor ”T” is operating in active
region, the output voltage is:
Figure 4.2
a.)
−−=
T
INSCCO e
vexpIREv
b.) vO=vIN-vBE c.) 0vO ≅ d.)
T
INCSCO e
vexpRIEv −=
Correct answer b.)
27.
4p
Schematic diagram of a common base stage is shown in figure 4.3. Ifthe bipolar junction transistor ”T” is operating in active region, theoutput voltage is:
Figure 4.3
a.)
−−=
T
INSCCO e
vexpIREv
b.) vO=vIN-vBE c.) 0vO ≅
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d.)T
INCSCO e
vexpRIEv −=
Correct answer a.)
28.
4p
Schematic diagram of a common emitter stage is shown in figure 4.1.If the bipolar junction transistor ”T” is operating in saturation
region, the output voltage is:
Figure 4.1
a.) vO=vCEsat b.) vO=EC-vCEsat c.) vO=EC d.) vO=EC-vBEsat Correct answer a.)
29.
4p
Schematic diagram of a common collector stage is shown in figure 4.2. If the bipolar junction transistor ”T” is operating in saturationregion, the output voltage is:
Figure 4.2
a.) vO=vCEsat b.) vO=EC-vCEsat c.) vO=EC d.) vO=EC-vBEsat Correct answer b.)
30.
4p
Schematic diagram of a common base stage is shown in figure 4.3. Ifthe bipolar junction transistor ”T” is operating in saturation region,the output voltage is:
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Figure 4.3
a.) vO=vCEsat b.) vO=EC-vCEsat c.) 0vO ≅ d.) vO=EC-vBEsat Correct answer c.)
31.
3p
The transfer characteristic of a common emitter stage is shown in
figure:a.)
0.5V 1V vIN
vO EC
vCEsat
γ V
vBEsat
b.)
γ V vIN
vO
EC-vCEsat.
EC
c.)
- γ V vIN
vO
EC
-vBEsat
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d.)
γ V vIN
vO
EC-vCEsat.
EC
Correct answer a.)
32.
3p
The transfer characteristic of a common collector stage is shown in
figure: a.)
0.5V 1V vIN
vO EC
vCEsat
γ V
vBEsat
b.)
γ V vIN
vO
EC-vCEsat.
EC
c.)
- γ V vIN
vO
EC
-vBEsat
d.)
γ V vIN
vO
EC-vCEsat.
EC
Correct answer b.)
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33.3p
The transfer characteristic of a common base stage is shown infigure: a.)
0.5V 1V vIN
vO EC
vCEsat
γ V
vBEsat
b.)
γ V vIN
vO
EC-vCEsat.
EC
c.)
- γ V vIN
vO
EC
-vBEsat
d.)
γ V vIN
vO
EC-vCEsat.
EC
Correct answer c.)
344p
The common emitter amplifier is presented in figure:
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a.)
b.)
c.)
d.)
Correct answer a.)
35
4p
The common collector amplifier is presented in figure:
a.)
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b.)
c.)
d.)
Correct answer b)
36
4p
The common base amplifier is presented in figure:
a.)
b.)
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c.)
d.)
Correct answer d.)
38
3p
Figure 4.4 shows a common-emitter amplifier.
Figure 4.4
The equivalent circuit (quasi-static small signal regime) is: a.)
b.)
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c.)
d.)
Correct answer a.)
39
3p
Figure 4.5 shows a common collector amplifier.
Figure 4.5
The equivalent circuit (quasi-static small signal regime) is:a.)
b.)
c.)
d.)
Correct answer b.)
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a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer a.)
42
1p
Figure 4.4 shows a common emitter amplifier. Resistor RE is
designed to:
Figure 4.4
a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer b.)
431p
Figure 4.4 shows a common emitter amplifier. Resistor RC isdesigned to:
Figure 4.4
a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer c.)
44
1p
Figure 4.4 shows a common emitter amplifier. Capacitor C1 is
designed to:
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Figure 4.4
a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitord.) be a decoupling capacitor
Correct answer c.) 45
1p
Figure 4.4 shows a common emitter amplifier. Capacitor C2 is
designed to:
Figure 4.4
a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitord.) be a decoupling capacitorCorrect answer c.)
46
1p
Figure 4.4 shows a common emitter amplifier. Capacitor CE is
designed to:
Figure 4.4
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a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitord.) be a decoupling capacitorCorrect answer d.)
47
1p
Figure 4.5 shows a common collector amplifier. Resistors RB1 and RB2
are designed to:
Figure 4.5
a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer a.)
48
1p
Figure 4.5 shows a common collector amplifier. Resistor RE is
designed to:
Figure 4.5
a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer c.)
491p
Figure 4.5 shows a common collector amplifier. Capacitor C1 isdesigned to:
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Figure 4.5
a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitord.) be a decoupling capacitorCorrect answer c.)
50
1p
Figure 4.5 shows a common collector amplifier. Capacitor C2 is
designed to:
Figure 4.5
a.) assure the base potential
b.) assure the thermal stabilityc.) be a coupling capacitord.) be a decoupling capacitorCorrect answer c.)
511p
Figure 4.6 shows a common base amplifier. Resistors RB1 and RB2 aredesigned to:
Figure 4.6
a.) assure the base potential
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b.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer a.)
521p
Figure 4.6 shows a common base amplifier. Resistor RE is designedto:
Figure 4.6
a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer b.)
531p
Figure 4.6 shows a common base amplifier. Resistor RC is designedto:
Figure 4.6
a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer c.)
54
1p
Figure 4.6 shows a common base amplifier. Condenser C1 is designed
to:
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Figure 4.6
a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitord.) be a decoupling capacitorCorrect answer c.)
551p
Figure 4.6 shows a common base amplifier. Condenser C2 is designedto:
Figure 4.6
a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitor
d.) be a decoupling capacitorCorrect answer c.)
56
1p
Figure 4.6 shows a common base amplifier. Condenser CB is designed
to:
Figure 4.6
a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitor
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d.) be a decoupling capacitorCorrect answer d.)
60.
4p
Figure 4.4 shows a common emitter amplifier. Kipping in mind that
in
oV V
VA = , the voltage gain is:
Figure 4.4
a.)Cv RgA π−=
b.)Cmv RgA −=
c.) 1Av ≅ d.)
Cmv RgA = Correct answer a.)
61.
4p
Figure 4.5 shows a common collector amplifier. Kipping in mind that
in
oV
V
VA = , the voltage gain is:
Figure 4.5
a.)Cv RgA π−=
b.) Cmv RgA −= c.) 1Av ≅
d.) Cmv RgA = Correct answer c.)
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62.
4p
Figure 4.6 shows a common collector amplifier. Kipping in mind that
in
oV V
VA = , the voltage gain is:
Figure 4.6
a.)Cv RgA π−=
b.) Cmv RgA −= c.) 1Av ≅ d.)
Cmv RgA = Correct answer d.)
63.
4p
Figure 4.4 shows a common emitter amplifier. Kipping in mind that
in
inin I
VR = , the input resistance is:
Figure 4.4
a.)
β≅
+β= mmEin
r
1
rRR
b.)
β≅
+β= ππ
r
1
rRR Ein
c.) ( )[ ] EEBEBin RRRR1rRR β≅β≅+β+= π d.)
ππ ≅= rrRR Bin Correct answer d.)
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64.4p
Figure 4.5 shows a common collector amplifier. Kipping in mind that
in
inin I
VR = , the input resistance is:
Figure 4.5
a.)
β≅+β= mmEinr
1
rRR
b.)
β≅
+β= ππ
r
1
rRR Ein
c.) ( )[ ] EEBEBin RRRR1rRR β≅β≅+β+= π d.)
ππ ≅= rrRR Bin Correct answer c.)
65.4p
Figure 4.6 shows a common base amplifier. Kipping in mind that
in
inin I
VR = , the input resistance is:
Figure 4.6
a.)
β≅
+β= mmEin
r
1
rRR
b.)
β≅
+β= ππ
r
1
rRR Ein
c.) ( )[ ] EEBEBin RRRR1rRR β≅β≅+β+= π d.)
ππ ≅= rrRR Bin
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Correct answer a.)
66.
4p
Figure 4.7 shows a common emitter amplifier. The output generator
is necessary in order to estimate the output resistance. The equivalent
circuit (quasi-static small signal regime) is:
Figure 4.7a.)
b.)
c.)
d.)
Correct answer a.)
67.4p
Figure 4.8 shows a common collector amplifier. The output generatoris necessary in order to estimate the output resistance. The equivalentcircuit (quasi-static small signal regime) is:
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Figure 4.8
a.)
b.)
c.)
d.)
Correct answer b.)
68.4p
Figure 4.9 shows a common base amplifier. The equivalent circuit(quasi-static small signal regime) necessary in order to estimate the
output resistance is:
Figure 4.9
a.)
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b.)
c.)
d.)
Correct answer a.)
69.
3p
The output resistance of a common collector amplifier is
a.) ( )[ ] EEBEBo RRRR1rRR β≅β≅+β+= π b.)
ππ ≅= rrRR Bo c.)
β≅
+β= ππ
r
1
rRR Eo
d.) Co RR = Correct answer c.)
703p
The output resistance of a common emitter amplifier is
a.) ( )[ ] EEBEBo RRRR1rRR β≅β≅+β+= π b.)
ππ ≅= rrRR Bo c.)
β≅
+β= ππ
r
1
rRR Eo
d.)Co RR =
Correct answer d.)
713p
The output resistance of a common base amplifier is
a.) ( )[ ] EEBEBo RRRR1rRR β≅β≅+β+= π b.)
ππ ≅= rrRR Bo
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c.)β
≅+β
= ππ r1
rRR Eo
d.)Co RR =
Correct answer d.)
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Chapter 5
Junction Field Effect Transistor
1
2p
Basic structure of a junction field effect transistor is shown in figure:
a.) S G D
B
SiO2
p++ n++
n
n
channel
b.) S G D
B
SiO2
n++ n++
p
channel
c.) G
D
G
channel
p
pn
S
n
p-n junction
p-n junction
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d.)S G D
B
SiO2
n++ n++
p
n
channel
Correct answer c.)
2.1p
Figure 5.1 shows the basic structure of a junction field effecttransistor. With „S” is denoted:
G
D
G
channel
p
pn
S
n
p-n junction
p-n junction
Figure 5.1
a.) Sourceb.) Drainc.) Grilld.) BulkCorrect answer a.)
3.1p Figure 5.1 shows the basic structure of a junction field effecttransistor. With „G” is denoted: G
D
G
channel
p
pn
S
n
p-n junction
p-n junction
Figure 5.1
a.) Sourceb.) Drainc.) Grill
d.) BulkCorrect answer c.)
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4.1p
Figure 5.1 shows the basic structure of a junction field effecttransistor. With „G” is denoted:
G
D
G
channel
p
pn
S
n
p-n junction
p-n junction
Figure 5.1
a.) Sourceb.) Drainc.) Grill
d.) BulkCorrect answer c.)
5.
1p
The symbol of a “n” channel junction field effect transistor is:
a.)
b.)
c.)
d.)
Correct answer d.)
6.
1p
The symbol of a “p” channel junction field effect transistor is:
a.)
b.)
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11.
3p
The main current of a “n” channel junction field effect transistor is
flowing between source and drain. It is composed of electrons. Intheir course, these electrons pass through a region called “channel”.
The resistance of the channel is controlled by the grill. This controlmay be realized if grill-channel junction is operating in “off” mode.The control mechanism is: a.) gate voltage changes the space charge region size⇒geometry of
the channel is changed⇒channel resistance is modified ⇒channelcurrent is controlled
b.) gate voltage changes the space charge region size ⇒ channelresistance is modified ⇒geometry of the channel is changed ⇒ channel current is controlled
c.) geometry of the channel is changed ⇒gate voltage changes thespace charge region size ⇒ channel resistance is modified ⇒ channel current is controlled
d.) channel resistance is modified ⇒ gate voltage changes the spacecharge region size ⇒ geometry of the channel is changed ⇒ channel current is controlled
Correct answer a.)
12.
1p
Common source connection of a junction field effect transistor is
presented in figure:a.)
b.)
c.)
d.)
Correct answer a.)
13.1p Common drain connection of a junction field effect transistor ispresented in figure:
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a.)
b.)
c.)
d.)
Correct answer c.)
14.
1p
Common grill connection of a junction field effect transistor is
presented in figure: a.)
b.)
c.)
d.)
Correct answer b.)
15.
3p
In common source connection
a.) input signals are:* grill-source voltage* grill current
output signals are:* drain-source voltage
* drain currentb.) input signals are:* grill-drain voltage
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* grill currentoutput signals are:* source-drain voltage* source current
c.) input signals are:* source-grill voltage* source current
output signals are:* drain-grill voltage* drain current
d.) input signals are:* grill-source voltage* grill current
output signals are:* source-drain voltage* source current
Correct answer a.)
16.3p
In common grill connection
a.) input signals are:* grill-source voltage* grill current
output signals are:* drain-source voltage* drain current
b.) input signals are:* grill-drain voltage* grill current
output signals are:* source-drain voltage* source current
c.) input signals a
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