1. Analog Electronics Tests .pdf

8/18/2019 1. Analog Electronics Tests .pdf

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1

Chapter 1

“P-N” Diode

1.

1p

Figure 1.1 shows the structure of a „p-n” junction. With „p” has been

noted:

ANp ≅

A

DNn ≅

C

Metallurgical junction

Figure 1.1

a.) the concentration of the acceptor atomsb.) the concentration of the donor atomsc.) the concentration of the electronsd.) the concentration of the holesCorrect answer d.)

2.1p

Figure 1.1 shows the structure of a „p-n” junction. With „n” has beennoted:

ANp ≅

A

DNn ≅

C


Figure 1.1

a.) the concentration of the acceptor atomsb.) the concentration of the donor atomsc.) the concentration of the electronsd.) the concentration of the holesCorrect answer c.)

3.

1p

Figure 1.1 shows the structure of a „p-n” junction. With „ N A” has

been noted:


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Analog Electronics - Tests

2

ANp ≅

A

DNn ≅

C


Figure 1.1

a.) the concentration of the acceptor atomsb.) the concentration of the donor atomsc.) the concentration of the electronsd.) the concentration of the holesCorrect answer a.)

4.

1p

Figure 1.1 shows the structure of a „p-n” junction. With „ N D” has

been noted:

ANp ≅

A

DNn ≅

C


Figure 1.1

a.) the concentration of the acceptor atomsb.) the concentration of the donor atomsc.) the concentration of the electronsd.) the concentration of the holesCorrect answer b.)

5.1p

Figure 1.2 shows the symbol of a „p-n” diode. With „A” has beennoted:

Figure 1.2

a.) anodeb.) cathodec.) total instantaneous value of the drop voltage across the dioded.) total instantaneous value of the current flowing through the diodeCorrect answer a.)

6.

1p

Figure 1.2 shows the symbol of a „p-n” diode. With „C” has been

noted:


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Figure 1.2

a.) anodeb.) cathodec.) total instantaneous value of the drop voltage across the dioded.) total instantaneous value of the current flowing through the diodeCorrect answer b.)

7.

1p

Figure 1.2 shows the symbol of a „p-n” diode. With „v A” has been

noted:

Figure 1.2

a.) anodeb.) cathodec.) total instantaneous value of the drop voltage across the dioded.) total instantaneous value of the current flowing through the diodeCorrect answer c.)

8.

1p

Figure 1.2 shows the symbol of a „p-n” diode. With „i A” has been

noted:

Figure 1.2

a.) anodeb.) cathodec.) total instantaneous value of the drop voltage across the dioded.) total instantaneous value of the current flowing through the diodeCorrect answer d.)

9.3p

“Diode effect” means:

a.) in normal operation- practically -the current through the diode

flows only from cathode to anodeb.) in normal operation- practically -the current through the diode

flows only from anode to cathode


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c.) in normal operation - practically - meaning diode current is dictatedby the external circuit of the dioded.) in normal operation, - practically - the diode current flows

sometimes from the anode to the cathode and other times from thecathode to the anode

Correct answer b.)

10.

1p

Figure 1.3 shows a "p-n" junction at thermal equilibrium. With „1”

has been noted:

p n

- -

- -

- -

- -

- -

- -

- -

+ + + +

+ + + +

+ + + +

+ + + +

+ + + +

+ + + +

E

1. 3.2.

Figure 1.3

a.) P neutral regionb.) N neutral regionc.) transition regiond.) internal electric fieldCorrect answer a.)

11.

1p

Figure 1.3 shows a "p-n" junction at thermal equilibrium. With „2”

has been noted:

p n

- -

- -

- -

- -

- -

- -

- -

+ + + +

+ + + +

+ + + +

+ + + +

+ + + +

+ + + +

E

1. 3.2.

Figure 1.3

a.) P neutral regionb.) N neutral regionc.) transition regiond.) internal electric fieldCorrect answer c.)

12.1p

Figure 1.3 shows a "p-n" junction at thermal equilibrium. With „3”has been noted:


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6

a.) concentration gradient of the acceptor and donor atoms of the “p”neutral region and transition regionb.) concentration gradient of the acceptor and donor atoms of the “n”

neutral region and transition regionc.) concentration gradient of the acceptor and donor atoms of the “p”

neutral region and “n” neutral regiond.) concentration gradient of donors and the acceptor atoms

surrounding the metallurgical junctionCorrect answer d.)

16.

3p

Figure 1.4 shows a "p-n" junction at thermal equilibrium. Transition

region responsible for the appearance of diode-effect occurs aroundthe metallurgical junction as a result of the diffusion of the electrons

and holes. The diffusion phenomenon is caused by concentrationgradient of donors and the acceptor atoms surrounding themetallurgical junction. As a result of this phenomenon, in thestructure fixed charges appear. They are represented by:

p n

- -

- -

- -

- -

- -

- -

- -

+ + + +

+ + + +

+ + + +

+ + + +

+ + + +

+ + + +

+

E

P neutralregion

N neutralregion

Transitionregion

Figure 1.4

a.) ions trapped in crystalline network

b.) electronsc.) holesd.) lattice structureCorrect answer a.)

17.2p

The internal electric field existing in the transition region is due to:

a.) ions trapped in crystalline networkb.) electronsc.) holesd.) lattice structureCorrect answer a.)

18.

2p

At reverse bias, the internal potential barrier is:


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7

a.) increasedb.) decreasedc.) unaffectedd.) sometimes increased, sometimes decreasedCorrect answer a.)

19.

2p

At forward bias, the internal potential barrier is:

a.) increasedb.) decreasedc.) unaffectedd.) sometimes increased, sometimes decreased

Correct answer b.)

20.

2p

From a formal point of view, the diode is fully described by:

a.) one characteristic equationb.) two characteristic equationsc.) a number of equations depending by the topology of the circuitd.) a number of equations depending by the operating regimeCorrect answer a.)

21.3p

From a formal point of view, a diode operating in quasi-static largesignal regime is fully described by an equation of the type:

a.) 0,,,dtvd

,,dt

dv,v,dt

id,,dt

di,iE p1m

Am

AAn

An

AA =

θθ KKK b.) ( ) 0, = A A vi E

c.) aaa vgi =

d.) 0dt

vd,,

dt

dv,v,

dt

id,,

dt

di,iE

mA

mA

AnA

nA

A =

KK

Correct answer a.)

22.3p

From a formal point of view, a diode operating in quasi-static smallsignal regime is fully described by an equation of the type::

a.) 0,,,dt

vd,,

dt

dv,v,

dt

id,,

dt

di,iE p1m

Am

AAn

An

AA =

θθ KKK

b.)( ) 0v,iE

AA

=

c.) aaa vgi =


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8

d.) 0dt

vd,,dt

dv,v,dt

id,,dt

di,iEm

AmAAn

AnAA =

KK

Correct answer c.)

23.

2p

The I-V characteristic of an ideal diode is:

a.)

−

= 1

v

eexpIi

A

TSA

b.)

−

= 1

ev

expIiT

ASA

c.)

+

= 1

e

vexpIi

T

ASA

d.)

+

= 1

ve

expIiA

TSA

Correct answer b.)

24.2p

The I-V characteristic of an ideal diode is:

−

= 1

e

vexpIi

T

ASA

where:

q

kT eT =

At room temperature:

a.) eT ≅2.5 mVb.) eT ≅25 mVc.) eT ≅250 mVd.) eT ≅2.5 VCorrect answer b.)

25.1p

Figure 1.5 represents the static characteristic of a diode.


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IS

VBR

vA

iA

Vγ

1.

4.2.

3.

Figure 1.5

“IS” is:

a.) half-wave rectified average currentb.) peak value of the current

c.) saturation currentd.) full-wave rectified average currentCorrect answer b.)

26.

1p

Figure 1.5 represents the static characteristic of a diode. Vγ is:

IS

VBR

vA

iA

Vγ

1.

4.2.

3.

Figure 1.5

a.) breakdown voltageb.) built-in voltagec.) half-wave rectified average voltaged.) full-wave rectified average voltageCorrect answer b.)

27.1p

Figure 1.5 represents the static characteristic of a diode. VBR is:


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IS

VBR

vA

iA

Vγ

1.

4.2.

3.

Figure 1.5

a.) breakdown voltageb.) built-in voltagec.) half-wave rectified average voltage

d.) full-wave rectified average voltageCorrect answer a.)

28.1p

Figure 1.5 represents the static characteristic of a diode. With the"1" was noted:

IS

VBR

vA

iA

Vγ

1.

4.2.

3.

Figure 1.5

a.) breakdown regionb.) cut-off region – reverse biasc.) cut-off region – forward biasd.) conduction regionCorrect answer a.)

29.

1p

Figure 1.5 represents the static characteristic of a diode. With the

"2" was noted:


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IS

VBR

vA

iA

Vγ

1.

4.2.

3.

Figure 1.5

a.) breakdown regionb.) cut-off region – reverse biasc.) cut-off region – forward bias

d.) conduction regionCorrect answer b.)

30.

1p


"3" was noted:

IS

VBR

vA

iA

Vγ

1.

4.2.

3.

Figure 1.5

a.) breakdown regionb.) cut-off region – reverse biasc.) cut-off region – forward biasd.) conduction regionCorrect answer c.)

31.

1p


"4" was noted:


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IS

VBR

vA

iA

Vγ

1.

4.2.

3.

Figure 1.5

a.) breakdown regionb.) cut-off region – reverse biasc.) cut-off region – forward bias

d.) conduction regionCorrect answer d.)

32.2p

Figure 1.6 shows a possible linearization of the characteristic inFigure 1.5 and it is called “zero order model” (Mathematically

idealized diode).

IS

VBR

vA

iA

Vγ

1.

4.2.

3.

vA

iA

Zero order model Real Characteristic

Figure 1.5 Figure 1.6Under this approximation the equivalent circuit of the diode is:a.)

b.)

c.)


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d.)

Correct answer d.)

33.

2p

Figure 1.6 shows a possible linearization of the characteristic in

Figure 1.5 and it is called “zero order model” (Mathematicallyidealized diode). According to this approximation, a diode operatingin conduction region behaves as:

IS

VBR

vA

iA

Vγ

1.

4.2.

3.

vA

iA


Figure 1.5 Figure 1.6a.) a resistorb.) an open circuitc.) an short circuitd.) a switchCorrect answer c.)

34.2p

Figure 1.6 shows a possible linearization of the characteristic inFigure 1.5 and it is called “zero order model” (Mathematically

idealized diode). According to this approximation, a diode operating

in cut-off region behaves as

IS

VBR

vA

iA

Vγ

1.

4.2.

3.

vA

iA


Figure 1.5 Figure 1.6a.) a resistorb.) an open circuitc.) an short circuitd.) a switchCorrect answer a.)

35. Avalanche multiplication occurs at:


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3pa.) high voltages in case of weakly doped junctionsb.) low voltages in case of weakly doped junctionsc.) high voltages in case of strong doped junctionsd.) low voltages in case of strong doped junctionsCorrect answer a.)

36.3p

Tunneling occurs at:

a.) high voltages in case of weakly doped junctionsb.) low voltages in case of weakly doped junctionsc.) high voltages in case of strong doped junctionsd.) low voltages in case of strong doped junctionsCorrect answer d.)

37.

2p

Figure 1.7 shows the static characteristic of a Zener diode. It must

operates:

IZM

IZm

VZ vZ

iZ

Figure 1.7

a.) in breakdown regionb.) in cut-off region reverse biasc.) in cut-off region forward biasd.) conduction regionCorrect answer a.)

38.2p

Figure 1.7 shows the static characteristic of a Zener diode. Thecurrent flowing through the diode must satisfy the condition:

IZM

IZm

VZ vZ

iZ

Figure 1.7a.)

Mm ZZZIiI ≤≥


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b.) Mm ZZZ IiI ≤≤ c.)

Mm ZZZIiI ≥≥

d.)Mm ZZZ

IiI ≥≤

Correct answer b.)

39.2p

In real situations there are certain limitations to avoid the destructionof a rectifier diode. The most common limitations are:a.) IFM and VBR b.) IZM and VZ c.) IFM and VZ d.) IZM and VBR Correct answer a.)

40.

2p

In real situations there are certain limitations to avoid the destruction

of a Zener diode. The most common limitations are:a.) IFM and VBR b.) IZM and VZ c.) IFM and VZ d.) IZM and VBR Correct answer b.)

41.

4p

The value of the current IA flowing through the diode is (see figure

1.8):

Figure 1.8

a.) mA4IA ≅ b.) mA4IA −≅ c.) mA0IA ≅ d.) mA2IA ≅ Correct answer c.)

42.4p The value of the drop voltage VA across the diode is (see figure 1.8):


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Figure 1.8

a.) V10VA −= b.) V8VA −= c.) V8VA = d.) V10VA = Correct answer b.)

43.3p

Small signal condition for a semiconductor diode is satisfied if:

a.) the signal across the diode is less than 2.5 mVb.) the signal across the diode is less than 10 mV c.) the signal across the diode is less than 25 mV d.) the signal across the diode is less than 100 mV Correct answer b.)

44.

3p

Small signal conductance of semiconductor diode has the value:

a.) [ ] [ ]mAI25mSg Aa = b.) [ ] [ ]mAI5.2mSg Aa =

c.) [ ] [ ]mAI4mSg Aa = d.) [ ] [ ]mAI40mSg Aa = Correct answer d.)

45.

3p

The mathematical model of a semiconductor diode that operates

under quasi-static small signal regime is:a.) aaa vgi =

b.)

−

= 1

e

vexpIi

T

ASA

c.) 1−= aaa vgi

d.)

=

T

ASA e

vexpIi

Correct answer a.)


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46.3p

Equivalent circuit of a semiconductor diode that works under quasi-static small signal regime is:

a.)

b.)

c.)

d.)

Correct answer b.)


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Chapter 2

Rectifiers

1.

1p

Figure 2.1 shows:

Figure 2.1 a.) a half wave rectifierb.) a full wave rectifierc.) a bridge rectifierd.) a peak rectifierCorrect answer a.)

2.1p

Figure 2.1 shows a half wave rectifier. With “Tr” was noted:

Figure 2.1 a.) the load resistorb.) the non-linear element, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer c.)


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3.

1p

Figure 2.1 shows a half wave rectifier. With “RL” was noted:

Figure 2.1 a.) the load resistorb.) the non-linear element, providing the effect of recovery

c.) the power transformerd.) the filtering elementCorrect answer d.)

4.

1p

Figure 2.1 shows a half wave rectifier. With “D” was noted:

Figure 2.1 a.) the load resistorb.) the non-linear element, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer b.)

5.

1p

Figure 2.1 shows a half wave rectifier. With “Vp” was noted:


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Figure 2.1 a.) the amplitude value of the AC voltage drop across the load resistorb.) the effective value of the AC voltage drop across the load resistorc.) the instantaneous value of the AC voltage drop across the load

resistord.) the total value of the voltage drop across the load resistor

Correct answer c.)

8.1p

Figure 2.1 shows a half wave rectifier. With “iL” was noted:

Figure 2.1 a.) the amplitude value of the AC load currentb.) the effective value of the AC load currentc.) the instantaneous value of the AC load currentd.) the total value of the load currentCorrect answer d.)

9.1p

See figure 2.1. Diode “D” is conducting:

Figure 2.1


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a.) on the positive half waveb.) on the negative half wavec.) a relatively small time interval of the positive half waved.) a relatively small time interval of the negative half waveCorrect answer a.)

10.

2p

Figure 2.2 shows the wave forms of a:

Vs

t

t

Vs

vL

π 5π 4π 3π 2

VL

Figure 2.2

a.) half wave rectifierb.) full wave rectifierc.) bridge rectifierd.) peak rectifierCorrect answer a.)

11.

4p

See figure2.1. The DC component of the drop voltage across the load

resistor is:

Figure 2.1

a.)π

= sLV2

V

b.)π

=2

VV sL

c.) π=s

L

V

V


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d.)π

= sL V2V

Correct answer c.)

12.1p

Figure 2.3 shows:

Figure 2.3 a.) a half wave rectifierb.) a full wave rectifierc.) a bridge rectifierd.) a peak rectifierCorrect answer b.)

13.

1p

Figure 2.3 shows a full wave rectifier. With “Tr” was noted:

Figure 2.3 a.) the load resistorb.) the non-linear element, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer c.)

14.

1p

Figure 2.3 shows a full wave rectifier. With “RL” was noted:


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Figure 2.3 a.) the load resistorb.) the non-linear element, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer a.)

15.

1p

Figure 2.3 shows a full wave rectifier. With “D1” and “D2” werenoted:

Figure 2.3 a.) the load resistorb.) the non-linear elements, providing the effect of recovery

c.) the power transformerd.) the filtering elementCorrect answer b.)

16.1p

Figure 2.3 shows a full wave rectifier. With “Vp” was noted:

Figure 2.3 a.) the amplitude value of the AC voltage applied across the primary ofthe power transformer


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b.) the effective value of the AC voltage applied across the primary ofthe power transformerc.) the instantaneous value of the AC voltage applied across the

primary of the power transformerd.) the total value of the voltage applied across the primary of the

power transformerCorrect answer a.)

17.1p

Figure 2.3 shows a full wave rectifier. With “Vs” was noted:

Figure 2.3 a.) the amplitude value of the AC voltage drop across the secondary of

the power transformerb.) the effective value of the AC voltage drop across the secondary of

the power transformerc.) the instantaneous value of the AC voltage drop across the

secondary of the power transformerd.) the total value of the voltage drop across the secondary of the

power transformer

Correct answer a.)

18.

1p

Figure 2.3 shows a full wave rectifier. With “vL” was noted:

Figure 2.3 a.) the amplitude value of the AC voltage drop across the load resistor

b.) the effective value of the AC voltage drop across the load resistorc.) the instantaneous value of the AC voltage drop across the loadresistor


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d.) the total value of the voltage drop across the load resistorCorrect answer d.)

19.

1p

Figure 2.3 shows a full wave rectifier. With “iL” was noted:

Figure 2.3

a.) the amplitude value of the AC load currentb.) the effective value of the AC load currentc.) the instantaneous value of the AC load currentd.) the total value of the load currentCorrect answer d.)

20.2p

Figure 2.3 shows a full wave rectifier. In normal operation:

Figure 2.3 a.) on the positive half wave D1 and D2 diodes operate in “on” stateb.) on the positive half wave D1 diode operates in “on” state and D2

diode operates in “off” statec.) on the positive half wave D2 diode operates in “on” state and D1

diode operates in “off” stated.) on the positive half wave D1 and D2 diodes operate in “off” stateCorrect answer b.)

21.

2p

Figure 2.3 shows a full wave rectifier. In normal operation:


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Figure 2.3 a.) on the negative half wave D1 and D2 diodes operate in “on” stateb.) on the negative half wave D1 diode operates in “on” state and D2

diode operates in “off” statec.) on the negative half wave D2 diode operates in “on” state and D1

diode operates in “off” state

d.) on the negative half wave D1 and D2 diodes operate in “off” stateCorrect answer c.)

22.

2p


Vs

t ω

t ω

Vs

vL

π π 5π 4π 3π 2

VL

Figure 2.4

a.) half wave rectifierb.) full wave rectifierc.) clipping circuitd.) peak rectifierCorrect answer b.)

23.

4p

See figure2.3. The DC component of the voltage drop across the load

resistor is:

Figure 2.3


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a.)π

= sL V2V

b.)π

=2V

V sL

c.)π

= sLV

V

d.)π

= sLV

2V

Correct answer a.)

24.

1p

Figure 2.5 shows:

Figure 2.5 a.) a half wave rectifierb.) a full wave rectifierc.) a bridge rectifierd.) a peak rectifierCorrect answer c.)

25

1p

Figure 2.5 shows a bridge rectifier. With “Tr” was noted:

Figure 2.5 a.) the load resistor

b.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering element


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Correct answer c.)

26.1p

Figure 2.5 shows a bridge rectifier. With “RL” was noted:


b.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer a.)

27.

1p

Figure 2.5 shows a bridge rectifier. With “D1, D2, D3 and D4” was

noted:

Figure 2.5 a.) the load resistorb.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer a.)

28.1p

Figure 2.5 shows a bridge rectifier. With “Vp” was noted:


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Figure 2.5 a.) the amplitude value of the AC voltage applied across the primary of

the power transformerb.) the effective value of the AC voltage applied across the primary of

the power transformerc.) the instantaneous value of the AC voltage applied across the

primary of the power transformerd.) the total value of the voltage applied across the primary of thepower transformer

Correct answer a.)

29.

1p

Figure 2.5 shows a bridge rectifier. With “Vs” was noted:




secondary of the power transformerd.) the total value of the voltage drop across the secondary of the

power transformerCorrect answer b.)

30.

2p

Figure 2.5 shows a bridge rectifier. In normal operation:


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Figure 2.5 a.) on the positive half wave D1, D2, D3, and D4, diodes operate in “on”

stateb.) on the positive half wave D1 and D3 diodes operate in “on” state

and D2 and D4 diodes operates in “off” statec.) on the positive half wave D2 and D4 diodes operate in “on” state

and D1 and D3 diodes operate in “off” stated.) on the positive half wave D1, D2, D3, and D4 diodes operate in “off”state

Correct answer b.)

31.2p

Figure 2.5 shows a bridge rectifier. In normal operation:

Figure 2.5 a.) on the negative half wave D1, D2, D3, and D4, diodes operate in

“on” stateb.) on the negative half wave D1 and D3 diodes operate in “on” state

and D2 and D4 diodes operates in “off” statec.) on the negative half wave D2 and D4 diodes operate in “on” state

and D1 and D3 diodes operate in “off” stated.) on the negative half wave D1, D2, D3, and D4 diodes operate in “off”

stateCorrect answer c.)

32.4p

See figure2.5. The DC component of the voltage drop across the loadresistor is:


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Figure 2.5

a.)π

= sLV2

V

b.)π

=2

VV sL

c.) π=sL VV

d.)π

= sLV

2V

Correct answer a.)

33.

1p

Figure 2.6 shows::

Figure 2.6 a.) a half wave rectifierb.) a full wave rectifierc.) a bridge rectifierd.) a peak rectifierCorrect answer d.)

34.

1p

Figure 2.6 shows a peak rectifier. With “Tr” was noted:


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Figure 2.6 a.) the load resistorb.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer c.)

35.1p

Figure 2.6 shows a peak rectifier. With “RL” was noted:

Figure 2.6 a.) the load resistorb.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering elementCorrect answer a.)

36.1p

Figure 2.6 shows a peak rectifier. With “D” was noted:


b.) the non-linear elements, providing the effect of recoveryc.) the power transformerd.) the filtering element


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Correct answer b.)

37.1p

Figure 2.6 shows a peak rectifier. With “C” was noted:

Figure 2.6 a.) the load resistorb.) the non-linear elements, providing the effect of recovery

c.) the power transformerd.) the filtering elementCorrect answer d.)

38.

1p

Figure 2.6 shows a peak rectifier. With “Vp” was noted:

Figure 2.6 a.) the amplitude value of the AC voltage applied across the primary ofthe power transformer

b.) the effective value of the AC voltage applied across the primary ofthe power transformer

c.) the instantaneous value of the AC voltage applied across theprimary of the power transformer

d.) the total value of the voltage applied across the primary of thepower transformer

Correct answer a.)

39.

1p

Figure 2.6 shows a peak rectifier. With “Vs” was noted:


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secondary of the power transformer

d.) the total value of the voltage drop across the secondary of thepower transformer

Correct answer b.)

40.

1p

Figure 2.6 shows a peak rectifier. With “vL” was noted:

Figure 2.6

a.) the amplitude value of the AC voltage drop across the load resistorb.) the effective value of the AC voltage drop across the load resistorc.) the instantaneous value of the AC voltage drop across the load

resistord.) the total value of the voltage drop across the load resistorCorrect answer d.)

41.1p

Figure 2.6 shows a peak rectifier. With “iL” was noted:

Figure 2.6 a.) the amplitude value of the AC load current


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b.) the effective value of the AC load currentc.) the instantaneous value of the AC load currentd.) the total value of the load currentCorrect answer d.)

42.

1p

See figure 2.6. Diode “D” is conducting:

Figure 2.6 a.) on the positive half waveb.) on the negative half wavec.) a relatively small time interval of the positive half waved.) a relatively small time interval of the negative half waveCorrect answer c.)

43.2p


V

VL Vl

Vs

tT

τ

Figure 2.7

a.) half wave rectifierb.) full wave rectifierc.) clipping circuitd.) peak rectifierCorrect answer d.)

44.

4p

See figure2.6. The DC component of the voltage drop across the load

resistor:


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Figure 2.6 a.) increases with increase in load currentb.) decreases with increase in load currentc.) does not depend on the current value of the loadd.) decreases with decrease in load currentCorrect answer b.)

45.4p

See figure2.6. The AC component of the voltage drop across the loadresistor:

Figure 2.6 a.) increases with increase in load currentb.) decreases with increase in load currentc.) does not depend on the current value of the load

d.) increases with decrease in load currentCorrect answer a.)


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39

Chapter 3

Bipolar Junction Transistor

1.

3p

Consider a „pnp” or a „npn” structure. According to general

definition of a Bipolar Junction Transistor, this type of structure

behaves like a Bipolar Junction Transistor if:a.) the base is very narrow (only)b.) the emitter is heavily doped (only)c.) the base is very narrow and the emitter is heavily dopedd.) the base is very narrow or the emitter is heavily dopedCorrect answer c.)

2.2p

The emitter of a Bipolar Junction Transistor:

a.) is intended to "collect" mainstream carriers flowing through thestructure

b.) is intended to "control" mainstream carriers flowing through the

structurec.) is intended to "generate" mainstream carriers flowing through thestructure

d.) has no roleCorrect answer c.)

3.2p

The collector of a Bipolar Junction Transistor:


b.) is intended to "control" mainstream carriers flowing through thestructure

c.) is intended to "generate" mainstream carriers flowing through the

structured.) has no roleCorrect answer c.)


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40

4.

2p

The base of a Bipolar Junction Transistor:


b.) is intended to "control" mainstream carriers flowing through thestructure

c.) is intended to "generate" mainstream carriers flowing through thestructure

d.) has no roleCorrect answer b.)

5.

1p

Figure 3.1 shows:

C

E

B

Figure 3.1

a.) a “n” channel field effect transistorb.) a “p” channel field effect transistorc.) a “pnp” bipolar junction transistord.) a “npn” bipolar junction transistorCorrect answer d.)

6.

1p

Figure 3.2 shows:

C

E

B

Figure 3.2 a.) a “n” channel field effect transistorb.) a “p” channel field effect transistorc.) a “pnp” bipolar junction transistor

d.) a “npn” bipolar junction transistorCorrect answer c.)


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7.2p

A bipolar junction transistor operating in cut-off mode behaves as:

a.) a current controlled sourceb.) a short circuitc.) an open circuitd.) a switchCorrect answer c.)

8.

2p

A bipolar junction transistor operating in saturation mode behaves

as: a.) a current controlled sourceb.) a short circuitc.) an open circuit

d.) a switchCorrect answer b.)

9.

2p

A bipolar junction transistor operating in active mode behaves as:

a.) a current controlled sourceb.) a short circuitc.) an open circuitd.) a switchCorrect answer a.)

10.

3p

An approximate mathematical model of a bipolar junction transistor

operating in cut-off mode is:a.) 0iC ≅ and 0iB ≅ b.) 0vBC ≅ and 0vBE ≅ c.)

BC ii β≅ and γ ≅ VvBE d.)

EC ii α≅ and γ ≅ VvBE

Correct answer a.)

11.

3p

An approximate mathematical model of a bipolar junction transistor

operating in saturation mode is: a.) 0iC ≅ and 0iB ≅ b.) 0vBC ≅ and 0vBE ≅

c.) BC ii β≅ and γ ≅ VvBE d.)EC ii α≅ and γ ≅ VvBE


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42

Correct answer b.)

12.2p

If a bipolar junction transistor operates in active mode:

a.) emitter-base junction is “on” and collector-base junction is “off”b.) emitter-base junction is “off” and collector-base junction is “on”c.) emitter-base junction is “off” and collector-base junction is “off”d.) emitter-base junction is “on” and collector-base junction is “on”Correct answer a.)

13.

2p

If a bipolar junction transistor operates in saturation mode:

a.) emitter-base junction is “on” and collector-base junction is “off”b.) emitter-base junction is “off” and collector-base junction is “on”c.) emitter-base junction is “off” and collector-base junction is “off”d.) emitter-base junction is “on” and collector-base junction is “on”Correct answer d.)

14.

2p

If a bipolar junction transistor operates in cut-off mode:

a.) emitter-base junction is “on” and collector-base junction is “off”b.) emitter-base junction is “off” and collector-base junction is “on”c.) emitter-base junction is “off” and collector-base junction is “off”d.) emitter-base junction is “on” and collector-base junction is “on”Correct answer c.)

15.

2p

If a bipolar junction transistor operates in reverse active mode:

a.) emitter-base junction is “on” and collector-base junction is “off”b.) emitter-base junction is “off” and collector-base junction is “on”c.) emitter-base junction is “off” and collector-base junction is “off”d.) emitter-base junction is “on” and collector-base junction is “on”Correct answer b.)

16.1p

A bipolar junction transistor works as a simple transistor amplifierif:a.) it operates in active modeb.) it operates in saturation mode

c.) it operates in cut-off mode d.) it operates in reverse active mode Correct answer a.)


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43

17.

3p

If a transistor operates in active mode emitter-base junction is “on”

and collector-base junction is “off”. In this situation the so called”transistor effect” occurs. It means:a.) that a current of relatively high value is flowing through the emitter

junctionb.) that a current of relatively small value is flowing through the

emitter junction c.) that a current of relatively high value is flowing through the

collector junctiond.) that a current of relatively small value is flowing through the

collector junction Correct answer c.)

18.

3p

If a transistor operates in active mode the so called ”transistor

effect” occurs. It means that a current of relatively high value isflowing through the collector junction which is in “off” state. The

explanation lies in the fact that: a.) there is a tunneling effect into the baseb.) there is a tunneling effect into the emitter c.) the base is very narrow and so the mobile carriers injected by the

emitter into the base may reach the collector layerd.) there is a tunneling effect into the collector Correct answer c.)

19.1p

Figure 3.3 shows:

iB

iC

Input

Output

vBE

vCE

Figure 3.3

a.) common emitter connectionb.) common base connection c.) common collector connectiond.) common drain connection Correct answer a.)

20.

1p

Figure 3.4 shows:


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44

iB

iE

Input

Output

vBC

vEC

Figure 3.4

a.) common emitter connectionb.) common base connection c.) common collector connectiond.) common drain connection Correct answer c.)

21.

1p

Figure 3.5 shows:

iC iE

Input OutputvEB vCB

Figure 3.5

a.) common emitter connectionb.) common base connection c.) common collector connectiond.) common drain connection Correct answer b.)

22.2p In common emitter connection:

a.) input signals are:* base-emitter voltage* base current

output signals are:* collector-emitter voltage* collector current

b.) input signals are:* base-collector voltage* base current

output signals are:* emitter-collector voltage

* emitter currentc.) input signals are:* emitter-base voltage


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45

* emitter currentoutput signals are:* collector-base voltage* collector current

d.) input signals are:* base-emitter voltage* base current

output signals are:* emitter-collector voltage* emitter current

Correct answer a.)

23.

2p

In common collector connection:

a.) input signals are:* base-emitter voltage* base current




c.) input signals are:* emitter-base voltage* emitter current

output signals are:* collector-base voltage* collector current



Correct answer b.) 24. In common base connection:


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46

2pa.) input signals are:

* base-emitter voltage* base current




c.) input signals are:* emitter-base voltage* emitter current

output signals are:* collector-base voltage* collector current



Correct answer c.)

25.3p

Under quasi-static large signal regime, the bipolar junctiontransistor is fully described by two and only two equations, calledstatic characteristic equations, or in short, static characteristics.

Typically these are:a.) ( )BCBCC i,vii = and ( )CEBEBB v,vii = b.) ( )BCECC i,vii = and ( )CEBCBB v,vii = c.) ( )BCECC i,vii = and ( )CEBEBB v,vii = d.) ( )BCCC i,iii = and ( )CEBEBB v,vii = Correct answer c.)

26.3p

The output static characteristic is:


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47

a.) ( ) .constiCECC Bvii == b.) ( ) .constvBCC CEiii ==

c.) ( ) .constvBEBB CEvii ==

d.) ( ) .constvCEBB BEvii ==

Correct answer b.)

27.

3p

The input static characteristic is:

a.) ( ) .constiCECC Bvii ==

b.) ( ) .constvBCC CEiii == c.) ( ) .constvBEBB CEvii ==

d.) ( ) .constvCEBB BEvii ==

Correct answer c.)

28.

1p

Figure 3.6 shows the output static characteristic “1”is denoted:

v CE

i C

i B1

i B2

i B3

i B4

3

v CB =0

1

2

Figure 3.6

a.) active regionb.) saturation regionc.) cut-off regiond.) reverse active regionCorrect answer b.)

29.1p



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48

v CE

i C

i B1

i B2

i B3

i B4

3

v CB =0

1

2

Figure 3.6

a.) active regionb.) saturation regionc.) cut-off regiond.) reverse active regionCorrect answer c.)

30.

1p


v CE

i C

i B1

i B2

i B3

i B4

3

v CB =0

1

2

Figure 3.6a.) active regionb.) saturation regionc.) cut-off regiond.) reverse active regionCorrect answer a.)

31. Figure 3.7 shows:

vBE

iB

vCE1

vCE2>vCE1

γV

Figure 3.7


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49

a.) the output static characteristicb.) the input static characteristic c.) the transfer static characteristicd.) the transfer dynamic characteristic Correct answer b.)

32.

3p

Equivalent circuit of a transistor that operates in cut-off mode is

shown in figure noted:a.) B

E

C

vBE vCE

b.) B

E

CiCiB

c.)

B

E

C

βFiBvBE

iB

d.)

B

E

C

βFiBIS / βF

iB

Correct answer a.)

33.3p Equivalent circuit of a transistor that operates in saturation mode isshown in figure noted: a.) B

E

C

vBE vCE

b.) B

E

CiCiB

c.)

B

E

C

βFiBvBE

iB


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50

d.) B

E

C

βFiBIS / βF

iB

Correct answer b.)

34.3p

The so called “zero order model” of bipolar junction transistoroperating in active mode (large signal quasi-static regime) is:a.) .constvBE ≅ and EC ii ≅ b.) γ ≅ VvBE and BC ii β≅ c.)

β=

T

BE

F

SB e

vexp

Ii and

=

T

BESC e

vexpIi

d.) γ ≅ VvBE and CB ii β≅

Correct answer a.)

35.

3p

The so called “first order model” of bipolar junction transistor

operating in active mode (large signal quasi-static regime) is: a.) .constvBE ≅ and EC ii ≅ b.) γ ≅ VvBE and BC ii β≅ c.)

β=

T

BE

F

SB e

vexp

Ii and

=

T

BESC e

vexpIi


Correct answer b.)

36.3p

The so called “second order model” of bipolar junction transistoroperating in active mode (large signal quasi-static regime) is: a.) .constvBE ≅ and EC ii ≅ b.) γ ≅ VvBE and BC ii β≅ c.)

β=

T

BE

F

SB e

vexp

Ii and

=

T

BESC e

vexpIi


Correct answer c.)

37.

3p

Assume a bipolar junction transistor operating under quasi-static

large signal regime in active region. The equivalent circuit of such a


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51

transistor related to “first order model” is:a.) B

E

C

vBE vCE

b.) B

E

CiCiB

c.)

B

E

C

βFiBvBE

iB

d.)

B

E

CβFiBIS / βF

iB

Correct answer c.)

38.

3p

Assume a bipolar junction transistor operating under quasi-static

large signal regime in active region. The equivalent circuit of such atransistor related to “second order model” is: a.) B

E

C

vBE vCE

b.) B

E

CiCiB

c.)

B

E

C

βFiBvBE

iB

d.)

B

E

C

βFiBIS / βF

iB

Correct answer d.)

39.3p See figure 3.8. “1” is denoted:


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1.

IB=0

vCE

iC 2.

Figure 3.8

a.) primer breakdownb.) secondary breakdown c.) thermal runawayd.) tunneling phenomenon Correct answer a.)

40.3p

See figure 3.8. “2” is denoted:

1.

IB=0

vCE

iC 2.

Figure 3.8

a.) primer breakdownb.) secondary breakdown c.) thermal runaway

d.) tunneling phenomenon Correct answer b.)

41.3p

Due to thermal runaway phenomenon:

a.) “iC” increases uncontrollably when ambient temperature increasesb.) “iC” decreases uncontrollably when ambient temperature increases c.) “iC” increases uncontrollably when ambient temperature decreasesd.) “iC” decreases uncontrollably when ambient temperature decreases Correct answer a.)

42.

3p

Due to thermal runaway phenomenon “iC” increases uncontrollably

when ambient temperature increases: The explanation is that a

regenerative phenomenon can occur in the structure. That means:a.) decreasing of ambient temperature leads to increasing of junction

temperature. Increasing of junction temperature leads to increasing


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53

of collector current. On the other hand, increasing of collectorcurrent leads to increasing of junction temperature. In theseconditions a regenerative phenomenon occurs in the structure.

b.) increasing of ambient temperature leads to increasing of junctiontemperature. Increasing of junction temperature leads to increasingof collector current. On the other hand, increasing of collectorcurrent leads to increasing of junction temperature. In theseconditions a regenerative phenomenon occurs in the structure.

c.) decreasing of ambient temperature leads to decreasing of junctiontemperature. Decreasing of junction temperature leads to increasingof collector current. On the other hand, increasing of collectorcurrent leads to increasing of junction temperature. In theseconditions a regenerative phenomenon occurs in the structure.

d.) increasing of ambient temperature leads to decreasing of junctiontemperature. Decreasing of junction temperature leads to increasingof collector current. On the other hand, increasing of collectorcurrent leads to increasing of junction temperature. In theseconditions a regenerative phenomenon occurs in the structure.

Correct answer b.)

43.

3p

The voltage drop across the base-emitter junction varies with

temperature difference about:a.) 1-1.5 mV/ oCb.) 2-2.5 mV/ oC c.) 10-15 mV/ oCd.) 20-25 mV/ oC Correct answer b.)

44.1p

The operating limitations of a bipolar junction transistor arepresented in figure 3.9. With “1” was denoted:

vCE

iC

1

Saturationregion

Cut-offregion

4

3

2

Figure 3.9

a.) maximum value of the voltage collector-emitter


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55

47.

1p

The operating limitations of a bipolar junction transistor are

presented in figure 3.9. With “4” was denoted:

vCE

iC

1

Saturationregion

Cut-offregion

4

3

2

Figure 3.9a.) maximum value of the voltage collector-emitterb.) maximum value of the collector currentc.) maximum value of the power dissipationd.) safe areaCorrect answer d.)

48.3p

A possible mathematic model for a bipolar junction transistoroperating under quasi-static small signal regime is:a.)

BC ii β≅ and γ ≅ VvBE b.)

=

T

BESC e

vexpIi and

β=

T

BE

F

SB e

vexp

Ii

c.)be

mc vg

1i = andπ

=r

vi beb

d.)bemc vgi = and

π

=r

vi beb

Correct answer d.)

49.3p Assume that

T

C

BE

Cm e

I

dv

dig ≅= . The value is:

a.) gm[mS]=2.5IC[mA]b.) gm[mS]=4IC[mA] c.) gm[mS]=25IC[mA]

d.) gm[mS]=40IC[mA] Correct answer d.)


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56

50.3p

The relationship between mg (trans-conductance) and π r (input

resistance) is:a.) β=πrgm b.) π=β rgm c.)

mgr =βπ d.)

β=πr

gm

Correct answer a.)

51.

3p

The bias circuits of the bipolar transistor are designed to:

a.) stabilize the quiescent point only for the effects of temperatureb.) stabilize the quiescent point only for the effects scatteringparameters

c.) stabilize the quiescent point for the effects of temperature or for theeffects scattering parameters

d.) stabilize the quiescent point for the effects of temperature and forthe effects scattering parameters

Correct answer a.)

52.4p

Figure 3.10 shows a simple bias circuit.

Figure 3.10

The equivalent circuit (for quasi-static regime) of this circuit is: a.)


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57

b.)

c.)

d.)

Correct answer d.)

53.

4p

Figure 3.10 shows a simple bias circuit. The value of “IC” is given by:

a.)

C

BECC R

VEI

−β=

b.)

C

BECC R

VEI

+β=

c.)

B

BECC R

VEI −β=

d.)

B

BECC R

VEI

+β=

Correct answer c.)

54.4p

Figure 3.11 shows a typical bias circuit. “RE” is used for thermalstability. The mechanism by which this is accomplished is:

Figure 3.11


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58

a) T↑ ⇒ IC↑ ⇒ VRE ↑ ⇒ VE ↑ ⇒ VBE ↓ ⇒ IC ↓

b) T↑ ⇒ IC↓ ⇒ VRE ↑ ⇒ VE ↑ ⇒ VBE ↓ ⇒ IC ↓

c) T↑ ⇒ IC↑ ⇒ VRE ↓ ⇒ VE ↑ ⇒ VBE ↓ ⇒ IC ↓

d) T↑ ⇒ IC↑ ⇒ VRE ↑ ⇒ VE ↓ ⇒ VBE ↓ ⇒ IC ↓

where:VRE - drop voltage across RE;

VE - emitter voltage. Correct answer a.)

55.

4p

Figure 3.11 shows a typical bias circuit.

Figure 3.11

The equivalent circuit is:

a)

b)


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59

c)

d)

Correct answer a.)

56.4p

Figure 3.11 shows a typical bias circuit. Figure 3.12 shows theequivalent circuit. According to Kirchhoff’s theorems one obtains:

Figure 3.11 Figure 3.12

a) I=I1+βIB I2=I1+IB IB+βIB=IE EC=βIBRC+VCE+IERE -VBE=-VCE-βIBRC+I1RB1 VBE=I2RB2-IERE

b) I=I1+βIB I1=I2+IB IB+βIB=IE EC=βIBRC+VCE+IBRE -VBE=-VCE-βIBRC+I1RB1


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60

VBE=I2RB2-IERE

c) I=I1+βIB I1=I2+IB IB+βIB=IE EC=βIBRC+VBE+IERE -VBE=-VCE-βIBRC+I1RB1 VBE=I2RB2-IERE

d) I=I1+βIB I1=I2+IB IB+βIB=IE

EC=βIBRC+VCE+IERE -VBE=-VCE-βIBRC+I1RB1 VBE=I2RB2-IERE

Correct answer d.)

57.

4p

Figure 3.11 shows a typical bias circuit.

Figure 3.11

Appling Thevenin rule, the circuit may be redrawn as: a)


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61

b)

c)

d)

where:2B1B

2BCB RR

REE

+= and

2B1B

2B1BB RR

RRR

+=

Correct answer b.)

58.4p

Figure 3.11 shows a typical bias circuit. Figure 3.13 shows the samecircuit redrawn according to Thevenin rule.

Figure 3.11 Figure 3.13

The equivalent circuit is:


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62

a)

b)

c)

d)

Correct answer c.)

59.4p

Figure 3.11 shows a typical bias circuit. Figure 3.13 shows the samecircuit redrawn according to Thevenin rule. The equivalent circuit ofthis circuit is presented in figure 3.14. According to Kirchhoff’stheorems one obtains:


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63

Figure 3.14

a) IE=IE+βIB EC=βIBIC+VCE+IE EB-VBE=REIE+RBIB

b) IE=IB+βIC EC=βIBIC+VCE+IE EB-VBE=REIE+RBIB

c) IE=IB+βIB EC=βIBIC+VCE+IE EB-VBE=REIE+RBIB

d) IE=IB+βIB EC=βIBIC+VBE+IE EB-VBE=REIE+RBIB

where:2B1B

2B

CB RR

R

EE += and 2B1B2B1B

B RR

RR

R +=

Correct answer c.)

60.4p

Figure 3.11 shows a typical bias circuit. The value of “IC” is givenby:

Figure 3.11

a) ( )( ) EB

BEBC R1R

VEI +β+

−β=


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64

b) ( )( ) EB

BECC R1R

VEI+β+−β=

c) ( )( ) BE

BEBC R1R

VEI

+β+−β

=

d) ( )( ) EB

CEBC R1R

VEI

+β+−β

=

Correct answer a.)

61.3p

One of the mathematical models for quasi-static small signal regimeof a bipolar transistor is:a)

BC ii β≅ and γ ≅ VvBE b)

= TBE

SC e

vexpIi and

β= TBE

F

SB e

vexp

Ii

c)be

mc vg

1i = and

π

=r

vi beb

d)bc ii β= and

π

=r

vi beb

Correct answer d.)

62.2p

One of the mathematical models for quasi-static small signal regimeof a bipolar transistor is:

bc ii β= and

π

=r

vi beb

According to this mathematical model the equivalent is:

a)

b)

c)


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65

d)

Correct answer a.)

63.

2p

One of the mathematical models for quasi-static small signal regime

of a bipolar transistor is:

bemc vgi = andπ

=r

vi beb

According to this mathematical model the equivalent is: a)

b)

c)

d)

Correct answer b.)


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67

Chapter 4

Bipolar Junction TransistorFundamental Circuits

1.1p

Schematic diagram of a common emitter stage is shown in figure:

a.)

b.)

c.)

d.)

Correct answer a.)

2.1p

Schematic diagram of a common collector stage is shown in figure:


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68

a.)

b.)

c.)

d.)

Correct answer b.)

3.1p

Schematic diagram of a common base stage is shown in figure:

a.)

b.)


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69

c.)

d.)

Correct answer c.)

4.

2p

Schematic diagram of a common emitter stage is shown in figure 4.1

Bipolar junction transistor ”T” is operating in cut-off region if:

Figure 4.1

a.) vIN


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70

6.2p

Schematic diagram of a common emitter stage is shown in figure 4.1 Bipolar junction transistor ”T” is operating in saturation region if:

Figure 4.1

a.) vIN


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71

b.) CIN E,Vv γ ∈ c.) CIN Ev = d.) γ −∞−∈ V,vIN

Correct answer b.)

9.

2p

Schematic diagram of a common collector stage is shown in figure 4.2. Bipolar junction transistor ”T” is operating in saturation regionif:

Figure 4.2

a.) ( )γ

V v IN ,∞−∈ b.)

CIN E,Vv γ ∈ c.) CIN Ev = d.) ( )γ −∞−∈ V,vIN Correct answer c.)

10.2p

Schematic diagram of a common base stage is shown in figure 4.3. Bipolar junction transistor ”T” is operating in cut-off region if:

Figure 4.3

a.)BEsatIN vv −≅

b.) γ −−∈ V,vv BEsatIN c.) ∞+−∈ γ ,VvIN d.) [ )∞+−∈ ,vv BEsatIN Correct answer c.)

11.2p Schematic diagram of a common base stage is shown in figure 4.3. Bipolar junction transistor ”T” is operating in active region if:


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72

Figure 4.3


b.) ( )γ −−∈ V,vv BEsatIN c.) ∞+−∈ γ ,VvIN d.) [ )∞+−∈ ,vv BEsatIN Correct answer b.)

12.2p

Schematic diagram of a common base stage is shown in figure 4.3. Bipolar junction transistor ”T” is operating in saturation region if:

Figure 4.3


b.) γ −−∈ V,vv BEsatIN c.) ∞+−∈ γ ,VvIN d.) [ )∞+−∈ ,vv BEsatIN

Correct answer a.)

13.2p

Schematic diagram of a common emitter stage is shown in figure 4.1.

Figure 4.1

Bipolar junction transistor ”T” is operating in cut-off region if vIN


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74

b.)

c.)

d.)

Correct answer b.)

15.

3p

Schematic diagram of a common base stage is shown in figure 4.3.

Figure 4.3

Bipolar junction transistor, ”T” is operating in cut-off region if +∞−∈ γ ,VvIN . In these circumstances, the equivalent circuit (quasi-

static large signal regime) is:a.)

b.)

c.)


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75

d.)

Correct answer c.)

16.

2p


Figure 4.1

Bipolar junction transistor, ”T” is operating in active region if Vγ γγ γ


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76

17.

2p

Schematic diagram of a common collector stage is shown in figure 4.2.

Figure 4.2

Bipolar junction transistor, ”T” is operating in active region if vIN∈[ γ V , EC). In these circumstances, the equivalent circuit (quasi-

static large signal regime) is:

a.)

b.)

c.)

d.)

Correct answer b.)

18.

2p

Schematic diagram of a base collector stage is shown in figure 4.3.


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77

Figure 4.3

Bipolar junction transistor, ”T” is operating in active region if

γ −−∈ V,vv BEsatIN . In these circumstances, the equivalent circuit

(quasi-static large signal regime) is:a.)

b.)

c.)

d.)

Correct answer c.)

19.

2p



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78

Figure 4.1

Bipolar junction transistor, ”T” is operating in saturation region if vIN≈vBEsat. In these circumstances, the equivalent circuit (quasi-staticlarge signal regime) isa.)

b.)

c.)

d.)

Correct answer a.)

20.

2p

Schematic diagram of a common collector stage is shown in figure 4.2.

Figure 4.2

Bipolar junction transistor, ”T” is operating in saturation region if vIN=EC. In these circumstances, the equivalent circuit (quasi-staticlarge signal regime) is:


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79

a.)

b.)

c.)

d.)

Correct answer b.)

21.

2p

Schematic diagram of a common base stage is shown in figure 4.3.

Figure 4.3

Bipolar junction transistor, ”T” is operating in saturation region if

BEsatIN vv −≅ . In these circumstances, the equivalent circuit (quasi-static large signal regime) is:a.)


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80

b.)

c.)

d.)

Correct answer c.)

22.

4p

Schematic diagram of a common emitter stage is shown in figure 4.1.If the bipolar junction transistor ”T” is operating in cut-off region,the output voltage is:

Figure 4.1

a.) vO=EC b.)

satCEOvv ≈

c.) vO=0d.)

satBEOvv ≈

Correct answer a.)

23.

4p

Schematic diagram of a common collector stage is shown in figure 4.2. If the bipolar junction transistor ”T” is operating in cut-off

region, the output voltage is:


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81

Figure 4.2

a.) vO=EC b.)

satCEOvv ≈

c.) vO=0d.)

satBEOvv ≈

Correct answer c.)

24.

4p

Schematic diagram of a common base stage is shown in figure 4.3. Ifthe bipolar junction transistor ”T” is operating in cut-off region, theoutput voltage is:

Figure 4.3

a.) vO=EC b.)

satCEOvv ≈

c.) vO=0

d.) satBEO vv ≈ Correct answer a.)

25.

4p

Schematic diagram of a common emitter stage is shown in figure 4.1.If the bipolar junction transistor ”T” is operating in active region, theoutput voltage is:

Figure 4.1

a.)

−−=T

INSCCO e

vexpIREv


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82

b.) vO=vIN-vBE c.) 0vO ≅ d.)

T

INCSCO e

vexpRIEv −=

Correct answer d.)

26.4p

Schematic diagram of a common collector stage is shown in figure 4.2. If the bipolar junction transistor ”T” is operating in active


Figure 4.2

a.)

−−=

T

INSCCO e

vexpIREv

b.) vO=vIN-vBE c.) 0vO ≅ d.)

T

INCSCO e

vexpRIEv −=

Correct answer b.)

27.

4p

Schematic diagram of a common base stage is shown in figure 4.3. Ifthe bipolar junction transistor ”T” is operating in active region, theoutput voltage is:

Figure 4.3

a.)

−−=

T

INSCCO e

vexpIREv

b.) vO=vIN-vBE c.) 0vO ≅


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83

d.)T

INCSCO e

vexpRIEv −=

Correct answer a.)

28.

4p

Schematic diagram of a common emitter stage is shown in figure 4.1.If the bipolar junction transistor ”T” is operating in saturation


Figure 4.1

a.) vO=vCEsat b.) vO=EC-vCEsat c.) vO=EC d.) vO=EC-vBEsat Correct answer a.)

29.

4p

Schematic diagram of a common collector stage is shown in figure 4.2. If the bipolar junction transistor ”T” is operating in saturationregion, the output voltage is:

Figure 4.2

a.) vO=vCEsat b.) vO=EC-vCEsat c.) vO=EC d.) vO=EC-vBEsat Correct answer b.)

30.

4p

Schematic diagram of a common base stage is shown in figure 4.3. Ifthe bipolar junction transistor ”T” is operating in saturation region,the output voltage is:


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84

Figure 4.3

a.) vO=vCEsat b.) vO=EC-vCEsat c.) 0vO ≅ d.) vO=EC-vBEsat Correct answer c.)

31.

3p

The transfer characteristic of a common emitter stage is shown in

figure:a.)

0.5V 1V vIN

vO EC

vCEsat

γ V

vBEsat

b.)

γ V vIN

vO

EC-vCEsat.

EC

c.)

- γ V vIN

vO

EC

-vBEsat


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85

d.)

γ V vIN

vO

EC-vCEsat.

EC

Correct answer a.)

32.

3p

The transfer characteristic of a common collector stage is shown in

figure: a.)

0.5V 1V vIN

vO EC

vCEsat

γ V

vBEsat

b.)

γ V vIN

vO

EC-vCEsat.

EC

c.)

- γ V vIN

vO

EC

-vBEsat

d.)

γ V vIN

vO

EC-vCEsat.

EC

Correct answer b.)


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86

33.3p

The transfer characteristic of a common base stage is shown infigure: a.)

0.5V 1V vIN

vO EC

vCEsat

γ V

vBEsat

b.)

γ V vIN

vO

EC-vCEsat.

EC

c.)

- γ V vIN

vO

EC

-vBEsat

d.)

γ V vIN

vO

EC-vCEsat.

EC

Correct answer c.)

344p

The common emitter amplifier is presented in figure:


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87

a.)

b.)

c.)

d.)

Correct answer a.)

35

4p

The common collector amplifier is presented in figure:

a.)


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88

b.)

c.)

d.)

Correct answer b)

36

4p

The common base amplifier is presented in figure:

a.)

b.)


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89

c.)

d.)

Correct answer d.)

38

3p

Figure 4.4 shows a common-emitter amplifier.

Figure 4.4

The equivalent circuit (quasi-static small signal regime) is: a.)

b.)


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90

c.)

d.)

Correct answer a.)

39

3p

Figure 4.5 shows a common collector amplifier.

Figure 4.5

The equivalent circuit (quasi-static small signal regime) is:a.)

b.)

c.)

d.)

Correct answer b.)


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92

a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer a.)

42

1p

Figure 4.4 shows a common emitter amplifier. Resistor RE is

designed to:

Figure 4.4

a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer b.)

431p

Figure 4.4 shows a common emitter amplifier. Resistor RC isdesigned to:

Figure 4.4

a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer c.)

44

1p

Figure 4.4 shows a common emitter amplifier. Capacitor C1 is

designed to:


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93

Figure 4.4

a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitord.) be a decoupling capacitor

Correct answer c.) 45

1p

Figure 4.4 shows a common emitter amplifier. Capacitor C2 is

designed to:

Figure 4.4

a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitord.) be a decoupling capacitorCorrect answer c.)

46

1p

Figure 4.4 shows a common emitter amplifier. Capacitor CE is

designed to:

Figure 4.4


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94

a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitord.) be a decoupling capacitorCorrect answer d.)

47

1p

Figure 4.5 shows a common collector amplifier. Resistors RB1 and RB2

are designed to:

Figure 4.5

a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer a.)

48

1p

Figure 4.5 shows a common collector amplifier. Resistor RE is

designed to:

Figure 4.5


491p

Figure 4.5 shows a common collector amplifier. Capacitor C1 isdesigned to:


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95

Figure 4.5


50

1p

Figure 4.5 shows a common collector amplifier. Capacitor C2 is

designed to:

Figure 4.5

a.) assure the base potential

b.) assure the thermal stabilityc.) be a coupling capacitord.) be a decoupling capacitorCorrect answer c.)

511p

Figure 4.6 shows a common base amplifier. Resistors RB1 and RB2 aredesigned to:

Figure 4.6

a.) assure the base potential


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96

b.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer a.)

521p

Figure 4.6 shows a common base amplifier. Resistor RE is designedto:

Figure 4.6

a.) assure the base potentialb.) assure the thermal stabilityc.) be loadd.) assure the base potential and the thermal stabilityCorrect answer b.)

531p

Figure 4.6 shows a common base amplifier. Resistor RC is designedto:

Figure 4.6


54

1p

Figure 4.6 shows a common base amplifier. Condenser C1 is designed

to:


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97

Figure 4.6


551p

Figure 4.6 shows a common base amplifier. Condenser C2 is designedto:

Figure 4.6

a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitor

d.) be a decoupling capacitorCorrect answer c.)

56

1p

Figure 4.6 shows a common base amplifier. Condenser CB is designed

to:

Figure 4.6

a.) assure the base potentialb.) assure the thermal stabilityc.) be a coupling capacitor


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98

d.) be a decoupling capacitorCorrect answer d.)

60.

4p

Figure 4.4 shows a common emitter amplifier. Kipping in mind that

in

oV V

VA = , the voltage gain is:

Figure 4.4

a.)Cv RgA π−=

b.)Cmv RgA −=

c.) 1Av ≅ d.)

Cmv RgA = Correct answer a.)

61.

4p

Figure 4.5 shows a common collector amplifier. Kipping in mind that

in

oV

V


Figure 4.5

a.)Cv RgA π−=

b.) Cmv RgA −= c.) 1Av ≅

d.) Cmv RgA = Correct answer c.)


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99

62.

4p


in

oV V


Figure 4.6

a.)Cv RgA π−=

b.) Cmv RgA −= c.) 1Av ≅ d.)

Cmv RgA = Correct answer d.)

63.

4p

Figure 4.4 shows a common emitter amplifier. Kipping in mind that

in

inin I

VR = , the input resistance is:

Figure 4.4

a.)

β≅

+β= mmEin

r

1

rRR

b.)

β≅

+β= ππ

r

1

rRR Ein

c.) ( )[ ] EEBEBin RRRR1rRR β≅β≅+β+= π d.)

ππ ≅= rrRR Bin Correct answer d.)


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100

64.4p


in

inin I


Figure 4.5

a.)

β≅+β= mmEinr

1

rRR

b.)

β≅

+β= ππ

r

1

rRR Ein


ππ ≅= rrRR Bin Correct answer c.)

65.4p

Figure 4.6 shows a common base amplifier. Kipping in mind that

in

inin I


Figure 4.6

a.)

β≅

+β= mmEin

r

1

rRR

b.)

β≅

+β= ππ

r

1

rRR Ein


ππ ≅= rrRR Bin


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101

Correct answer a.)

66.

4p

Figure 4.7 shows a common emitter amplifier. The output generator

is necessary in order to estimate the output resistance. The equivalent

circuit (quasi-static small signal regime) is:

Figure 4.7a.)

b.)

c.)

d.)

Correct answer a.)

67.4p

Figure 4.8 shows a common collector amplifier. The output generatoris necessary in order to estimate the output resistance. The equivalentcircuit (quasi-static small signal regime) is:


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102

Figure 4.8

a.)

b.)

c.)

d.)

Correct answer b.)

68.4p

Figure 4.9 shows a common base amplifier. The equivalent circuit(quasi-static small signal regime) necessary in order to estimate the

output resistance is:

Figure 4.9

a.)


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103

b.)

c.)

d.)

Correct answer a.)

69.

3p

The output resistance of a common collector amplifier is

a.) ( )[ ] EEBEBo RRRR1rRR β≅β≅+β+= π b.)

ππ ≅= rrRR Bo c.)

β≅

+β= ππ

r

1

rRR Eo

d.) Co RR = Correct answer c.)

703p

The output resistance of a common emitter amplifier is


ππ ≅= rrRR Bo c.)

β≅

+β= ππ

r

1

rRR Eo

d.)Co RR =

Correct answer d.)

713p

The output resistance of a common base amplifier is


ππ ≅= rrRR Bo


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104

c.)β

≅+β

= ππ r1

rRR Eo

d.)Co RR =

Correct answer d.)


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105

Chapter 5

Junction Field Effect Transistor

1

2p

Basic structure of a junction field effect transistor is shown in figure:

a.) S G D

B

SiO2

p++ n++

n

n

channel

b.) S G D

B

SiO2

n++ n++

p

channel

c.) G

D

G

channel

p

pn

S

n

p-n junction

p-n junction


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106

d.)S G D

B

SiO2

n++ n++

p

n

channel

Correct answer c.)

2.1p

Figure 5.1 shows the basic structure of a junction field effecttransistor. With „S” is denoted:

G

D

G

channel

p

pn

S

n

p-n junction

p-n junction

Figure 5.1

a.) Sourceb.) Drainc.) Grilld.) BulkCorrect answer a.)

3.1p Figure 5.1 shows the basic structure of a junction field effecttransistor. With „G” is denoted: G

D

G

channel

p

pn

S

n

p-n junction

p-n junction

Figure 5.1

a.) Sourceb.) Drainc.) Grill

d.) BulkCorrect answer c.)


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107

4.1p

Figure 5.1 shows the basic structure of a junction field effecttransistor. With „G” is denoted:

G

D

G

channel

p

pn

S

n

p-n junction

p-n junction

Figure 5.1

a.) Sourceb.) Drainc.) Grill

d.) BulkCorrect answer c.)

5.

1p

The symbol of a “n” channel junction field effect transistor is:

a.)

b.)

c.)

d.)

Correct answer d.)

6.

1p

The symbol of a “p” channel junction field effect transistor is:

a.)

b.)


108/294


109/294


109

11.

3p

The main current of a “n” channel junction field effect transistor is

flowing between source and drain. It is composed of electrons. Intheir course, these electrons pass through a region called “channel”.

The resistance of the channel is controlled by the grill. This controlmay be realized if grill-channel junction is operating in “off” mode.The control mechanism is: a.) gate voltage changes the space charge region size⇒geometry of

the channel is changed⇒channel resistance is modified ⇒channelcurrent is controlled

b.) gate voltage changes the space charge region size ⇒ channelresistance is modified ⇒geometry of the channel is changed ⇒ channel current is controlled

c.) geometry of the channel is changed ⇒gate voltage changes thespace charge region size ⇒ channel resistance is modified ⇒ channel current is controlled

d.) channel resistance is modified ⇒ gate voltage changes the spacecharge region size ⇒ geometry of the channel is changed ⇒ channel current is controlled

Correct answer a.)

12.

1p

Common source connection of a junction field effect transistor is

presented in figure:a.)

b.)

c.)

d.)

Correct answer a.)

13.1p Common drain connection of a junction field effect transistor ispresented in figure:


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110

a.)

b.)

c.)

d.)

Correct answer c.)

14.

1p

Common grill connection of a junction field effect transistor is

presented in figure: a.)

b.)

c.)

d.)

Correct answer b.)

15.

3p

In common source connection

a.) input signals are:* grill-source voltage* grill current

output signals are:* drain-source voltage

* drain currentb.) input signals are:* grill-drain voltage


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111

* grill currentoutput signals are:* source-drain voltage* source current

c.) input signals are:* source-grill voltage* source current

output signals are:* drain-grill voltage* drain current

d.) input signals are:* grill-source voltage* grill current

output signals are:* source-drain voltage* source current

Correct answer a.)

16.3p

In common grill connection

a.) input signals are:* grill-source voltage* grill current

output signals are:* drain-source voltage* drain current

b.) input signals are:* grill-drain voltage* grill current

output signals are:* source-drain voltage* source current

c.) input signals a

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