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Blood Sugar Secrets
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Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance Modeling
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[IEEE 2012 IEEE/MTT-S International Microwave Symposium - MTT 2012 - Montreal, QC, Canada (2012.06.17-2012.06.22)] 2012 IEEE/MTT-S International Microwave Symposium Digest - Fast extraction
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Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part II: Characterization
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Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part I: Process Development
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Nonfamily Managers, Family Firms, and the Winner's Curse: The Influence of Noneconomic Goals and Bounded Rationality
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Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition
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On the Electrostatics of Bernal-Stacked Few-Layer Graphene on Surface-Passivated Semiconductors
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Natural convection of non-Newtonian power-law fluids on a horizontal plate
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Seismic Liquefaction Hazard and Site Response for Design of Piles in Mumbai City
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Proposal for all-graphene monolithic logic circuits
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Graphene nanoribbon based negative resistance device for ultra-low voltage digital logic applications
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Low-Frequency Noise in Bilayer MoS 2 Transistor
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Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors
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[IEEE 2009 Asia and South Pacific Design Automation Conference (ASP-DAC) - Yokohama, Japan (2009.01.19-2009.01.22)] 2009 Asia and South Pacific Design Automation Conference - High-speed
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Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?
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Measurement and stability of the pointing of the BepiColombo Laser Altimeter under thermal load
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[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - High-performance few-layer-MoS2
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[IEEE 2010 IEEE International Interconnect Technology Conference - IITC - Burlingame, CA, USA (2010.06.6-2010.06.9)] 2010 IEEE International Interconnect Technology Conference - AC
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Accurate Intrinsic Gate Capacitance Model for Carbon Nanotube-Array Based FETs Considering Screening Effect
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[IEEE ESSDERC 2013 - 43rd European Solid State Device Research Conference - Bucharest, Romania (2013.09.16-2013.09.20)] 2013 Proceedings of the European Solid-State Device Research
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