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HelioVolt presents at Photon's 3rd Thin Film Conference: Can CIGS become the savior of Thin FIlm?
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© 2011 HelioVolt Corporation
Convergence of Markets:Growth of Distributed EnergyBJ Stanbery
HelioVolt Founder, Chairman of the Board and Chief Science Officer
November 2008
© 2011 HelioVolt Corporation
Energy Generation and the Terawatt (TW) Challenge• Humanity uses 12 TW of power today
– 1 TW = 1,000 GW (Gigawatts)
• World will need 15 TW by 2012
• Only 5 known sources of energy are available on a TW scale*– Fossil fuels: Coal, oil, gas
– Nuclear fuels
– Solar• Only inherently distributed solution
• No fuel cost*Prof. Nathan Lewis,
http://nsl.caltech.edu/
© 2011 HelioVolt Corporation
Solar Energy Reaching Worldwide Grid Parity
Source: McKinsey.(1) kWh = kilowatt hour; kWp = kilowatt peak; TWh = terawatt hour; Wp = watt peak; the annual solar yield is the amount of electricity
generated by a south-facing 1 kW peak-rated module in 1 year, or the equivalent number of hours that the module operates at peak rating.(2) Tier 4 and 5 are names of regulated forms of electricity generation and usage.(3) Unsubsidized cost to end users of solar energy equals cost of conventional electricity.
Annual solar energy yield (kWh/kWp(1))
Grid Parity as of(3)
Today
Size of electricity market TWh a year(1)
Aver
age
pow
er p
rice
per h
ouse
hold
($/k
Wh(
1))
1,000 1,500 2,000500
$0.3
$0.2
$0.1
$0.0
Cos
t per
wat
t at p
eak
hour
s ($
/Wp(
1))
China
India
Greece
Texas
Australia
SpainNew YorkFranceFinland
Japan
Germany
Sweden
Netherlands
Denmark
California Tier 4(2)
2020
California Tier 5(2)
Hawaii
Italy
California
$8.0
$6.0
$4.0
$2.0
Norway
United Kingdom
South Korea
© 2011 HelioVolt Corporation
0
2,000
4,000
6,000
8,000
10,000
12,000
14,000
16,000
18,000
2004
2005
2006
2007
2008
2009
2010
E
2011
E
2012
E
32%45% 35% 29% 25%
42%
6% 9%
17%
22%
26%
Inst
alla
tion
s (M
W)
Germany Spain Italy ROE Japan S. Korea China ROW US
Policy Driven DemandUS % growth
Source: Barclays, IEA, Navigant
Historical Trends• 49% growth • 45% growth ex-Spain 2008
0%
50%
100%
150%
YOY Global Demand Growth
German FITSpanish
RDC
Recession
US ITC
© 2011 HelioVolt Corporation
Global Solar Markets in TransitionCommercial Roof Top Systems
Google HQ - California
Utility Scale
Solar farm - Germany
Austin City HallResidential roof - California
Building Integrated
Hong Kong Science Center
5
© 2011 HelioVolt Corporation
Advantages of thin film PV for Distributed Solar Energy• Efficient and high performing materials
– Direct bandgap semiconductors
– Better energy output – kWh/KW
– CIGS record at 20%+ conversion efficiency
• Significantly reduced costs– Less material usage
• Not affected by silicon supply shortages
– Potential for improving costs throughout value chain
• Advanced manufacturing techniques– Fewer processing steps
– Monolithic integration of circuits
– Automation
• Better aesthetics
© 2011 HelioVolt Corporation
BIPV Applications
• Roofing– Most common BIPV
application today
• Curtain wall / Facades– Emerging market
– HelioVolt has a number of established Joint Development partners
• Sunshades– Energy conservation and reduced building operating
costs
– Cooling load mitigation and glare control
– Easiest retrofit for PV but also costly
• Overhead glazing (canopies, skylights, atriums)
© 2011 HelioVolt Corporation
BIPV Product Requirements• Aesthetics:
– Visual attention – may or may not “blend into building”
– Uniform patterns and colors
– Must complement building design
• Efficiency:– Highest conversion efficiency per application
• Physical properties:– Flexibility in size
– Flexible and rigid • When glass = High quality flat glass
– Thermally or acoustically insulating
• Cost:– Smart integration
© 2011 HelioVolt Corporation
The Challenge to Wide Deployment of Distributed Solar Energy!
Growth of
BIPV
Builders
Developers/ Solar
Communities
Trades
Building Materials Mfgrs
Architects
PV Manufacturers
Government support
Standards Organizations
© 2011 HelioVolt Corporation
Opportunities for a More Efficient BIPV Products and Smarter Integration
10
Customer –Building Owner
Builder/ Contractor becomes Installer
Building Materials
Manufacturer becomes
Integrator/ System Designer
Future Integrated Products
Opportunity for Integration & System
Cost Reduction
Opportunity forPre-engineered
SolutionsPV Module
Mfgr
Mounting & Wiring
System Mfgr
Inverter/ Power Mgmt
Mfgr
© 2011 HelioVolt Corporation
Competitive Technology Advantage• FASST® CIGS process advantages
– Two-stage process provides maximum flexibility to optimize precursor deposition method and composition of each layer: higher efficiency
– Most rapid synthesis of CIGS from precursors of any method: reduces capital costs
– Demonstrated state of the art crystalline quality: higher efficiency
– Unique, rapid, flexible optimization of CIGS surface quality: higher efficiency
• Advanced NREL liquid precursor technology– Reduces capital costs and COGS
• Monolithic module circuit integration– Reduces module assembly costs compared to discrete cell assembly
• Advanced module packaging– Unique, high performance encapsulant, edge sealant, and potting
compound supports product lifetime beyond standard 25 year warranty: reduces cost of electricity (¢/kWh)
Glass In
Module Out
GlassPreparation
FASST® CIGSProcess
ModuleFormation
Final Assembly& Test
© 2011 HelioVolt Corporation 11
© 2011 HelioVolt Corporation
Reactive Transfer Processing of Compound Precursors
• Two-stage process– Low-temperature
deposition of multilayer compound precursor films
– RTP reaction of compound precursorsto form CIGS
112
Cu In, Ga
Se, S
247247
112 = Cu(In,Ga)(Se,S)2247 = Cu2(In,Ga)4(Se,S)7
CuSe.Cu2Se.
Cu2Se3. .(In,Ga)2(Se,S)3
.(In,Ga)4(Se,S)3
Intermetallic Plethora
.(In,Ga) (Se,S)
© 2011 HelioVolt Corporation
FASST® Reactive Transfer ProcessNon-Contact Transfer (NCT™) Synthesis
Source Plate
SubstrateCIGS Layer
Heat
Source Plate with Transfer FilmPressure
Substrate
Cu, In, Ga, Se
Process Step
• Independent deposition of distinct compound precursor layers on substrate and source plate
• Rapid non-contact reaction– Turns stack into CIGS with high efficiency structure– Combines benefits of sequential selenization with
Close-Spaced Vapor Transport (CSVT) for junction optimization
• CIGS adheres to the substrate and the source plate is reused
Rapid manufacturing process reduces capital amortization cost
© 2011 HelioVolt Corporation 13
© 2011 HelioVolt Corporation
FASST® CIGS Production Modules
Faceted CIGS crystals absorb light efficiently from all directions from dawn to dusk, giving HelioVolt CIGS its characteristic black color
Large grainswith no horizontal grain boundaries
support high efficiency
Cross-sectional SEM view
Top view with SEM
120x60 cm2 Module
© 2011 HelioVolt Corporation 14
© 2011 HelioVolt Corporation
Reactive Transfer Processing Compound Precursor Deposition• Two methods have been developed for
deposition of compound precursors– Low-temperature Co-evaporation
• Equipment requirements similar to conventional single-stage co-evaporation but lower temperatures lead to higher throughput and reduced thermal budget
– Liquid Metal-Organic molecular solutions• Proprietary inks developed under NREL CRADA
• Decomposition of inks leads to formation of inorganic compound precursor films nearly indistinguishable from co-evaporated films (for some compounds)
© 2011 HelioVolt Corporation
SEM
NREL CRADA – Hybrid CIGS by FASST®
Chalcopyrite CIGS (& Mo) (220/204) preferred orientation
achieved Exceptionally large grains Columnar structure
XRD
© 2011 HelioVolt Corporation
Product Scaling and Performance Experience
Prototype Module30cmx30cm
Scalability Proof
Production Module1.2mx0.6m
Commercial Production Size
Cell0.66cm2
14%
3%
3 Months
5%
12%
2 Months
2%
8%12%
10 Months
Cell
Prototype
Module Progress
1364x scale-up
8x scale-up
Effic
ienc
yEf
ficie
ncy
Effic
ienc
y4 Months
© 2011 HelioVolt Corporation 17
© 2011 HelioVolt Corporation
12% HelioVolt G2 Module Efficiency– NREL Measurement –
12% module independently verified by NREL (11.8±0.6%)
© 2011 HelioVolt Corporation 18
© 2011 HelioVolt Corporation
Total: $0.27/Wp
HelioVolt Process
Glass In
GlassPreparation
FASST® CIGSProcess
ModuleFormation
Final Assembly& Test
Competitors’ CIGS Cell-Based Processes
Monolithic Integration is Key to Cost Leadership and Product Reliability
$0.06
Module Out
$0.07
$0.01
$0.13
Note: Input materials cost / Wp in cents.
SubstratePreparation
CIGSProcess
Contact & GridFormation
Cell Cut & Sort
$0.06
$0.15
$0.01
?
Cell Stringing
Final Assembly& Test
Total: $0.51+/Wp
$0.12
$0.17
Glass In
Module Out
Additional Costs
Stainless steel foil
Higher non-material inputs (e.g. labor)
Higher yield loss
Stringing material
Two encapsulant layers and outer frame
$0.08
?
?
$0.12
$0.04
Add’l: $0.24+/Wp
© 2011 HelioVolt Corporation 19
© 2011 HelioVolt Corporation
• Development work based on HelioVolt patents and trade secrets will drive module efficiency from 10% to 16%
• Applied Research – HelioVolt’s partnership with NREL will drive module efficiency from 16% to 21%
6%
12%
18%
0%2010 2011 2012 2013
Baseline Process
Active Quenching,Advanced
Composition Grading Control
Ultrafast Heating,Predictive Design
Advanced TCO,Enhanced
Transmission,Light Trapping
Roadmap to 16% Module Efficiency
© 2011 HelioVolt Corporation 20
© 2011 HelioVolt Corporation
HelioVolt Module Rooftop Test Array
Factory Rooftop HelioVolt module test array. Array tracks performance of HelioVolt, as well as other thin-film and silicon modules, and inverters
© 2011 HelioVolt Corporation 21
© 2011 HelioVolt Corporation
Rooftop Performance –Comparison of All Arrays
• HelioVolt modules have highest yield, followed by Tier 1 mc-Si modules; CdTe & other CIGS lag behind
22
HelioVolt CIGSTier 1 mc-SiTier 1 CdTe2nd Glass Laminate CIGSTubular CIGS
One Day Comparison, All Arrays
© 2011 HelioVolt Corporation
© 2011 HelioVolt Corporation
Product Portfolio Built on Standard Component Platform
Commercial Rooftop Systems
BIPV – SpandrelsBIPV – Sunshades
Parking Structures
Utility Scale
• Front view• 5’x5’ Element• Framing provided by curtain wall manufacturer• Standard or custom element
1’X1’300mm CIGS PVIC
2’X4’
5’X5’
© 2011 HelioVolt Corporation 23
© 2011 HelioVolt Corporation
Solar Markets Expansion Will Drive Transition to Distributed Systems
• Capacity expansion to multi-GW scale essential to TW cumulative installation volumes– Primary obstacle to these expansions are capital-efficient
manufacturing technology
• Manufacturing technology breakthroughs and system integration continuing to drive low cost of solar energy– Product evolution destined to move beyond electronic component
integration to end-use systems integration
• Grid parity in global mass markets will be achieved in the next 5-10 years