Submitted by Revanna Navi 2BL09ec056

UNDER THE GUIDENECE OF

PROF: M.S JOLAD

ORGANISATION OF THE PRESENTATION1. Introduction2. Limitations of present memory technology3. Fundamentals of emerging memories4. Ovonic Unified Memory5. Amorphous v/s crystalline6. OUM Architecture7. Basic device operation8. Features of OUM9. Advantages of OUM10. Conclusion

INTRODUCTIONSEMICONDUCTORS FORM THE FUNDAMENTAL BUILDING BLOCKS OF MODERNS ELECTRONICS WORLD

MATERIAL LIMITED SCALING

Limitations of present memory technology

DRAM IS VOLATILE AND DIFFICULT TO INTIGRATERAM IS HIGH COST AND VOLATILEFLASH MEMORY IS SLOWER IN WRITESEXPANSION IN 2D SPACE

FUNDAMENTALS OF EMERGING MEMORIES

FeRamPolymer MemoryNROMMRAMSOvonic Unified Memory

Ovonic Unified Memory(OUM)Instead of using laser beam, use electric

current to heat the material. – High current, high temperature:

amorphous phase, high resistance – Medium current, lower temperature:

crystalline phase, low resistance Low current to sense resistance

Amorphous vs crystalline surfaces

OUM ARCHITECTURE

BASIC DEVICE OPERATIONSet/Reset Pulses

THE FEATURES OF OUM

NON VOLATILE HIGH DENSITYNON DESTRUCTIVE READHIGHLY SCALABLELOW COST

ADVANTAGES OF OUM

REVERSIBLE STRUCTURAL CHANGE SMALL ACTIVE STORAGE MEDIUMLOW VOLTAGE SINGLE SUPPLYHIGH TEMPARATURE RESISTANCESIMPLE PLANAR DEVICE STRUCTURE

CONCLUSIONOPTIMIZED OUMALL MECHANIC DEPENDENCYOUM OFFERS LOW POWER OPERATION AND RADIATION TOLERANCE

REFERENCES www.intel.com www.ovonyx.com www.baesystems.com www.aero.org

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