GE's Advanced Silicon Carbide Technology

Imagination at work

GE’s Advanced Silicon Carbide (SiC) TechnologyThe Next Revolution in Power

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Today, silicon-based chips

are used to manage power

in everything from portable

electronics to industrial-

scale equipment. They’re

the industry workhorse.

For high-power applications, SiC is the future


This advanced technology will

allow power electronics to run

faster and more efficiently, in

a smaller package.

GE pioneered SiC technology, with research dating back more than 50 years



Developed by our scientists over the past ten

years, GE’s SiC is the industry’s first power

semiconductor product with a temperature

rating of 200oC. The fabrication process in our

cleanroom involves almost 300 steps.


A view inside the power electronics box enhanced by GE’s SiC technology

SiC Semiconductors

Filter Capacitorsand Magnetics

Control Electronics

DC Capacitors

Packaging andThermal

Management

The next revolution in power

Next-Generation Semiconductors


SiC can take conventional transistors to new heights:

• Higher voltages • Higher temperatures • Higher frequency• Reduced power loss• Fewer, smaller capacitors and inductors• Smaller, simpler thermal management