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Diode – Voltage & Current
Yong Heui Cho @ Mokwon University
Some of slides are referred to:[1] A. S. Sedra & K. C. Smith, Microelectronic Circuits.
2
Electronic Circuits
3. Basic Circuit Theory
4. Diode – Operational Principle5. Diode – V/I
6. Diode – Basic Applications
3
Diode Equation• Equation based on quantum mechan-
ics
4
Forward Biasi = Is(ev/nVT – 1)
IS(T) : reverse-biased saturation current depends on Temp. and junction area≈ 10-15 (doubles at every 5 ºC)
VT = kT/q
V2 – V1 = 2.3nVT·log(I2/I1)
2.3VT is theoretical threshold swing : 60 mV
5
Cut-in V of LED
6
Temperature Effect
Reverse-bias / Breakdown regions
i = Is(ev/nVT – 1) i ≈ Is when v is negative and more than a few VT
Reverse current : doubles for every 10 ºC
Zener breakdown and avalanche breakdown
7
Exponential Model
The exponential model:ID = Isev/nVT
ID = (VDD – VD) / R
ID = Isev/nVT
Graphical Analysis
8
Constant V Model
iD = 0, vD ≤ VD
iD = undefined , vD ≥ VD
9
Piecewise Linear Model
iD = 0, vD ≤ VD0
iD = (vD - VD0) / rD , vD ≥ VD0
10
Diode Analysis
mAkR
VI RR 10
1010
ideal diode model
constant V model
VD = 0.7VrD = 5
mAkR
VVI DRR 3.9
17.010
piecewise linear model
mAkrR
VVID
DRR 254.9
517.010
11
Diode Voltage Regulator• Diode level shifter
VS = 5V
12
Analysis - Ideal Diode
VS = 5V
VD = 0VrD = 0
VVR 000
mAkR
VIL
RR 0
10
13
Analysis – Constant V
VS = 5V
VD = 0.7VrD = 0
VVR 4.17.07.0
mAkR
VIL
RR 4.1
14.1
14
Analysis – Piecewise Line
VS = 5V
VD = 0.7VrD = 1
VkmAmAVR
54.1)1//2//50)(700100(
mAkR
VIL
RR 54.1
154.1
15
Small Signal
rD = nVT / ID : small-signal resistance
id = IDvd/nVT = vd / rD
ID = Isev/nVT
vD(t) = VD + vd(t)
iD(t) ≈ ID(1 + vd/nVT) , vd/nVT ≪ 1
iD(t) = ID + IDvd/nVT = ID + id
23 T roomat 26mVVT
16
Zener BreakdownAt Bias point, ΔV = ΔI ·rZ rZ : dynamic resistance
Almost linear i-v characteristics
VZ = VZ0 + rZ·IZ
IZK : minimum current for the operation of Zener diode
17
Diode Symbols
18
LED Voltmeter• According to battery V, LED turns on one by one.
– D1: 10.6V = 9V (breakdown V) + 1.6V (LED V)