Din itex 10_09_2012

Multilayer nonlinear dielectric devices for RF mobile communications

… improvement of performance of smartphones and mobile computers (save power and extend operating time and

reduce harmful effect on human body)

… cost saving design for automotive radars and communication systems

… broad spectrum of tunable RF devices to exchange the traditional non-tunable ones

DINItex, Ladshut-Saint-Petersburg, June 2012

Industry pain and our proposition

Industry pain

CONFIDENTIAL 3 13.11.12

Antennas actually used in smart mobile devices like cell phones do not have automatic tuning of its impedance. Thus, impedance of antenna is being affected by human body parts like, for instance, hands. Impedance variations leads to mismatch between antenna and amplifier. Modern cell phones compensates this effect by providing a higher power to the amplifier output signal resulting to a reduction of stand alone time up two times.

Anti-collision radars and communication systems: up to now commercial solutions on the market are based only on mechanical scanning of antenna beam or on an array of non-scan antennas, which are very cost-intensive and not robust solutions.

Antenna is mismatched

with amplifier. Amplifier

increases signal power

Taking the phone in hand, we create interference to signal transmission

Battery faster

discharged

Cell phone and mobile computers:

Modern cell phone is a very multifunctional device, it is considered to support several frequency bands, providing Bluetooth, Wi-Fi, LTE communications. All of those systems require bandpass filters or filter banks. It is clear, that the reduction of area occupied by filters provides more free space for new function.

filters

Solutions: integrated products based on multilayer nonlinear dielectric varactor chips


Advantages of the products: ü save power ü extend operating time ü cost saving system design ü reduce harmful effect on human body

Core technology for different RF applications

Tunable bulk acoustic wave

(BAW) filters for mobile devices

Adaptive matching circuits for mobile phones, mobile computers and

tablets

Electronically scanned antenna

modules for automotive radars

and communication systems

multilayer nonlinear dielectric-metal structure (MND)

Comparison of technological approaches for varactor chips


Parameters Semiconductor varactors

Micro- electromechanical (MEMS)

Nonlinear dielectric-based elements

Power Handling ~0.01 W ~0.1 W ~1 W Tuning Speed ~1 ns ~ 1 mks ~1 ns Bias Voltage ~5V ~50V ~5V Quality Factor ~100 ~250 ~100 Tunability Life time

~4 5 years

~10 < 1 year

~3 5 years

Current varactor technologies fall into three major categories:

Ø  semiconductor-based varactor diodes Ø  Micro-electromechanical system (MEMS) varactors Ø  nonlinear dielectric-based varactors

Main drawback: low power handling

capability (high level of intermodulation

distortions)

Main drawbacks: high bias voltage and high

packaging cost

Advantages: The high power handling

capability in combination with the relatively low bias voltage provide the best performance

and low cost.

Only Nonlinear dielectric-based

elements provide the best

performance and low cost.

State of the art nonlinear dielectric technology and main unsolved problems


Ø  For mobile applications it is very important to have a high power handling capability (more than 30dBm) with low control voltage (3V) simultaneously.

Ø  At present time there are two different approaches to design of nonlinear dielectric film devices - planar structure and parallel-plate structure based on only one layer of nonlinear dielectric.

Ø  Planar structure provides high power handling capability (30dBm) but needs for that high control voltages (more than 400V). It requires step up voltage converters that is not acceptable for mobile devices.

Ø  From the other hand, parallel-plate structure is controlled by low voltages (5-30V) but has low power handling capability (5-10dBm) which is not enough for the operation of RF amplifier in mobile device.

Ø  The devices based on one dielectric layer are being developed by Agile RF (USA) and nGimat (USA).

Ø  Only multilayer structures allow to combine both important features in one device: to reduce control voltages and to achieve high power handling capability.

Ø  At present time only one company (Paratek) produces devices based on two layers of nonlinear dielectric. These devices provide power handling capability 30dBm (that is acceptable) and the control voltage about 20V and that is still high and still takes the DC-DC converters.

High control voltages and high power handling capability

Planar structure

Low control voltages and low power handling capability

Parallel-plate structure

Two-layers parallel-plate structure

Low control voltages and high power handling capability

The technology validation


Ø  Paratek is developing the most likely technology. It discovered a different approach to RF tuning using a thin-film material called ParaScan™ (nonlinear dielectric). Proprietary to Paratek, ParaScan is used to produce the ParaTune™ family of tunable integrated circuits (ICs).

Ø  An advantage of Paratek’s products is low-loss tuning over a wide range of impedances, ultra-fast response time, and industry-standard packaging which allows new generation of wireless products to perform better and more efficiently.

Ø  The significant contribution to the development of Paratek’s

technology was made by a group of Professor Kozyrev, who is one of the founders of DINItex. His group is the author of 15 patents that partly covers IP property in this field and were sold to Paratek in 2002-2008. During this period of time prof. Kosyrev’s group provided the material researches and prototyping of microwave devices for Paratek.

Ø  In March of 2012 Paratek Microwave Inc. was acquired by one main producers of smartphones – RIM (owner of trade mark BlackBerry that takes only 10% of smartphones market). That means that since that time Paratek is developing RF tuning for RIM only.

Ø  DINItex is the company which researches are open for the rest of the market that still contains 90%.

Ø  DINItex’s researchers independently developed additional advantages in technology and designed a range of new devices.

Results of Joint research Kozyrev’s Lab and Paratek:

ü 2001 R&D 100 Award of 100 best

technical-science works of USA

ü 15 US Patents ü Over 40 publications in scientific journals

and conferences proceedings ü 8 grants of US Department of Energy

Knowhow and new approach

Knowhow on the structure level


Our knowhow in thin film deposition technique provides the solution for described problem

Ø The principal: changing stoichiometry of dielectric at the initial growth stage allows to reduce the mismatch of crystal lattice constant.

Ø The effective changing of stoichiometry by pressure is possible only in unique designed technological vacuum

chamber (that is completely unique and patented by founders).

Ø For modeling of spattering and deposition processes the unique math model and computer simulation tool are elaborated and licensed by founders.

Ø The reduction of control voltages is possible only due to reduction of film thickness. But it leads to drop in power handling capability. For two layer structure with 3V control voltages the power handling capability is only 20dBm that is not enough for mobile applications.

Ø To keep 30dBm power handling capability it is possible to increase the number of layers with parallel reduction of their thicknesses.

Ø The required number of nonlinear dielectric layers is 8-12. Ø The required thickness of each layer shell be less than 100nm. Ø The reduction of nonlinear dielectric film thickness is constrained by

low-tuning layer on the metal-dielectric interface due to mismatch of crystal lattice constants. This problem becomes the most dominant with increase of layers number.

Ø Up to now this problem for bottom electrode materials with low losses at microwaves (with high conductivity, like Pt or Au) is not solved.

Me/BSTO/…../Substrate

Substrate

Knowhow on chip design level


DC in

RF in RF out

~ 1 mm

~ 1

mm

Ø  At the chip level the other main problem exists: excitation of acoustic waves leads to dramatical increase of microwave losses (reduction of Q-factor).

Ø  The two layer structure allows the cancellation of transverse acoustic modes (founders are the co-authors of patent application, owned to Paratek). However, the excitation of longitudinal acoustic waves is still a problem at present time.

Ø  Besides, the high level of operation microwave power takes an effective heat sink.

Our knowhow on chip level design provides the solution for mentioned problems:

Special shape of top electrodes

provides both cancellation of

long i tud ina l acous t ic wave

generation and more efficient heat

dissipation [PCT application is

preparing]

The image cannot be displayed. Your computer may not have enough memory to open the image, or the image may have been corrupted. Restart your computer, and then open the file again. If the red x still appears, you may have to delete the image and then insert it again. Capacitance

variation under microwave signal

Capacitance variation under DC control voltage

C, pF

U, V

Knowhow on tunable BAW filter design


Our knowhow of tunable BAW filter design provides the solution of mentioned problem

Ø Proposed BAW filter consists of several layers of nonlinear dielectric. The sign of piezoelectric coefficient of each layer depends on direction of control E-field.

Ø The principal: biasing of each nonlinear dielectric layer with EDC of the same or opposite direction results in the excitation of the antisymmetrical or symmetrical acoustic modes respectively.

Ø Frequency tuning up to 100% is possible. The principal of acoustic mode switching is completely unique and patented by founders.

Ø For modeling of acoustic wave excitation the unique math model and computer simulation tool are elaborated and licensed by founders.

Edc

Edc

Edc

Edc

Piezoelectric

Ø At present time BAW filters based on traditional RF piezoelectric materials (AlN, ZnO) are in active development and use. BAW filters can operate up to around 10GHz and provide the combination of high quality RF parameters (insertion loss, reliability, sizes).

Ø BAW filters made of the above materials can be electronically tuned to a specified frequency by using a varactor diode or by utilizing the second-order nonlinearity of the piezomaterial.

Ø However the frequency tuning in such a structures is not more than 3%.

Distributed nonlinear dielectric

structures for automotive radar

(77GHz) and communication (10GHz) phased array antennas

Absence of residual

polarization due to oxygen

annealing and special regimes

of electrodes deposition

Improvement of tanδ due to

cancellation of transversal and

longitudinal acoustic wave

generation [PCT application is

preparing]

Licensed technique and test-fixtures for RF characterization

of nonlinear dielectric structures

High structural quality of nonlinear dielectric

films due to the unique math model

and software of spattering and

deposition processes [PCT application is

preparing]

Theoretical and experimental

investigations of pure strontium

titanate films with relatively low loss

in W-band

New complex approach into technology of distributed nonlinear dielectric structures for phased array antennas


Ø  More than 20 years of experience in design of phased array antennas for frequency ranges up to 60 GHz.

Ø  2001 R&D 100 Award for technology of Electronically Scanning Antenna, which have been included in the list of 100 best technical-science works of USA in 2001 year.

IP list


Chip technology Product design Design simulation

Chip design and testing

1. Russian patent N2434078. 20.11.2011 “Method of complex oxide ferroelectric thin film deposition based ion-plasma sputtering technique” 2. Patent application to be applied (PCT) “Method of increasing the tunability of ultrathin ferroelectric films”

3. Russian Patent N2397607, 17.07.2009 “Ferroelectric acoustic resonator and its resonance frequency tuning technique”

4. Russian Patent N2367964, 04.04.2008 “Coaxial resonator for Capacitor Quality factor measurements” 5. Patent application to be applied (PCT) “Tunable bulk acoustic wave filter based on nonlinear dielectric films” 6. Patent application to be applied (PCT) “Tunable capacitor based on multilayer nonlinear dielectric”

7. Russian Patent N2361360, 12.05.2008 “Tunable pulse former made on non-linear ferroelectric transmission lines”

8. Russian Patent N2355080, 24.05.2007 “Microwave active module”

9. Russian Patent N2350008, 04.05.2007 “Method of thermal to electrical energy conversion and a device for it”

10. Patent application to be applied (PCT) “SW simulation Kit for simulation of process parameters at ion etching and ion plasma sputtering”

11. Russian Patent N2012610179 “SW design kit for resonance electro-acoustical phenomena modelling in multilayer structures”

7 released patents; 4 patent applications

Patent application plan


1st year 2nd year

1. PCT application “Control loop design for the RF tunable matching circuit”

2. PCT application “Phased array antenna for the automotive radar”

3. PCT application “BAW duplexer based on the multilayer nonlinear dielectric structure”

4. PCT application “BAW impedance tuner”

5. PCT application “Method of LTCC and multilayer nonlinear dielectric technology integration”

6. PCT application “Tunable RF filter based on integrated LTCC and multilayer nonlinear dielectric technology”

7. PCT application “Tunable RF coupler based on integrated LTCC and multilayer nonlinear dielectric technology”

8. PCT application “Tunable RF generator based on integrated LTCC and multilayer nonlinear dielectric technology”

9. PCT application “Tunable power divider based on integrated LTCC and multilayer nonlinear dielectric technology”

10. PCT application “Power amplifier tuner based on integrated LTCC and multilayer nonlinear dielectric technology”

Products

Multilayer nonlinear dielectric-metal structure

(MND)

Electronically scanned antenna modules for

automotive radars and communication systems

Adaptive matching circuits for mobile phones, mobile

computers and tablets

Tunable bulk acoustic wave (BAW) filters for mobile

devices

Broad spectrum of products based on multilayer nonlinear dielectric varactor chips


New class of voltage tunable RF components

§  Tunable power dividers §  Phase shifters §  Power amplifier tuners

§  Tunable filters §  Tunable couplers §  Tunable generators

Core product

Integrated products


Market call for adaptive matching circuit (product 1)

Ø  The output power and radiation efficiency of a mobile phone with a compact narrow-band antenna can be greatly degraded by large mismatches resulting from the user's hand position.

Ø Since multi-mode, multiband phones with densely packed radios and future MIMO antennas will only make next generation designs even more problematic, antennas need to be less sensitive to their environment.

Ø Adaptive antenna tuners dynamically change antenna impedance using a feedback controller so it is always tuned for maximum efficiency. In these modules, a detector measures the transmitted RF signal and an algorithm derives the mismatch information from the phase of the matched input impedance and calculates any necessary changes for the adaptive matching circuit.

Ø Disruption is all well and good when a company is creating a new smartphone category, but Apple had a problem on its hands when its iPhone's antenna reception experienced disruption in the hands of its customers.

“Divine Innovation: 10 Technologies Changing the Future of Passive and Control Components” Nov, 2011


LG request for development of adaptive matching circuit (market call confirmation)


Adaptive matching circuit. Operational principle

Adaptive Matching Circuit

Impedance sensor

Controller

Impedance transformer From Amplifier

Mismatch

Unknown load (antenna) Matched

Output Ø  Tuning elements are basic building blocks for

adaptive impedance matching circuits

Ø  Electronically controllable varactors are most practical and convenient tuning elements for providing tunability in RF/microwave circuits

Varactor Impedance transformer

U control

Input

Adaptive matching circuit design for entrance to the market


3-D schematic of adaptive matching module

Proposed varactor chips (based on multilayer nonlinear dielectric structure)

Multilayer substrate with integrated passive elements

Chip selfcos, Euro cents 6,6 BOM 2,8 processing materials: coa0ng lack, developing chemicals, stripping and cleaning materials 1,3

substrate sapphire, 4 inches 1,3 dielectric targets (Ba,Sr)TiO3 0,01 Pt target (contact layer) 0,04 Gold for upper contact 0,1 Oxigen for deposi0on process 0,01 Argon for deposi0on process 0,03

Labor cost 3,1 Equipment deprecia@on cost 0,7

Module for MC selfcost, Euro cents 111 BOM 94,4 chips (4 pcs) 26,4

diode MW 8,0

coil for MW 4,0

microcontroller 50,0

capacitors for uC 2,0

resistors 4,0

Labor cost 16 Equipment deprecia@on cost 1,1

Electronically scanned antenna modules (product 2)


Satellite broadcasting systems (10.95 - 13.5 GHz)

Two different type of products based on the same technology

Automotive radar (24GHz/77GHz), used for emergency brake assist, collision warning, adaptive cruise control, blind spot detection

Anti-collision radars

Camera Sensors

77 GHz and 24 GHz Sensors Applications: §  Adaptive Cruise Control §  Emergency Brake Assist

Existing radars We suggest radar of the future - electronically scan and multi beam

Main advantages: §  High speed and wide angle of scan §  Reliability due to the lack of mechanical moving parts §  Combining short range and long range radars in one

package – reduce size and number of units in the system

§  Integrated technology of aperture and control circuit §  Low cost


At present time there are only the non-scan or the mechanical scanning systems on the commercial market which are very cost-intensive and not robust solution.

LETI prototype

Scanned antenna for communication systems


State of the art - mechanically scanned antennas

Consist of 16 coplanar waveguide ND phase shifters

30GHz thin film ND phase shifter

LETI prototype of Ka-band phased array antenna

Tunable BAW filters in mobile devices (product 3)


Traditional mobile phone front-end

Four filters

Antenna Switch Module

Tunable BAW filter

Proposed mobile phone front-end

Antenna Switch Module 4 in 1 - cost saving

system design

Voltage controlled switching and tuning of frequency band (Novel feature, no analogues)

Advantages of BAW technology: ü High power handling capability ü High quality factor ü Miniaturization

1 2 3 4 5 6 Freq. GHz

BAW filters application

Wi-Fi

Wi-Fi, BT

GPS

GSM, WCDMA

BAW - operational principle


Suppression of piezoresonances due to use of two-

layer ND film structure

[J. Oakes, A. Kozyrev, A. Prudan et al. Patent Application US2008/0232023]

Substrate

Ме ND

E = EDC + EMW I nduced p iezoe lec t i c behavior is a negative p h e n o m e n a f o r M W tunable devices

Well-known tunable capacitive structures on the base of nonlinear dielectric

Knowhow in tunable acoustic devices based on multilayer nonlinear dielectric structure


Application to each layer of EDC of the same or

opposite direction results in the excitation of the

antisymmetrical or symmetrical modes respectively.

Two-layers structure Me

Me Me

ND ND

Edc Edc

UMW

[A. Kozyrev, A. Prudan et al. Patent RU №2397607]

switching

Validation (present time results)

Phase Array Antennas


Ø  The principal product based on one layer structure designed and manufactured by our team is Phase Array Antennas.

Ø  Based on our phase array antennas new product like radars with electronically scanning on frequencies up to 80 GHz can be designed. The use of phase array antennas will completely eliminate the use of expensive mechanical systems in the production of automotive radar

Ø  It can be also used in communication systems for transferring signals in wide range of frequencies on long distance, for example transferring video and audio signals. It can be used also for transferring signal on moving objects.


Transferring video signal on the distance 50 km

The progress of our team in Phase Array Antenna design


Ø  More than 20 years of experience in design of phased array antennas for frequency ranges up to 80 GHz.

Ø  2001 R&D 100 Award for technology of Electronically Scanning Antenna, which have been included in the list of 100 best technical-science works of USA in 2001 year.

Ø  A set of prototypes and engineering samples is developed


Structure and device parameters.

Structure parameters Device parameters

Stoichiometry (variation of film composition during the growth process). In the case of fixed film stoichiometry the tunability drops under temperature variations in operating temperature range. In order to get rid of this effect it is necessary to change the stoichiometry of the film as it grows. From the other hand the stoichiometry variation allows dramatically reduce the number of defects on the interface electrode/nonlinear dielectric due to reduction of the mismatch of crystal lattice constant that in turn results in quality improvement. Stoichiometry variation of film composition during the growth process is one of our main knowhow.

Ø  Tunability

Ø  Quality factor (losses)

Ø  Tuning Speed

Number of nonlinear dielectric layers. Only multilayer structures allow to combine both important features in one device: to reduce control voltages and to achieve high power handling capability.

Power handling capability

The thickness of a layer. The reducing of layers thickness provides the reducing of control voltages Bias Voltage

Chip topology. The unique chip topology leads to losses reduction and increasing of quality factor (Q). The unique chip topology is our main knowhow also. Quality factor (losses)

The key knowhow in device manufacturing is knowhow on the level of chip and structure growth. It is so due to the fact that set of structure parameters fully determine the end device parameters. And the quality of the device is fully determined by quality of film deposition process and chip topology. Below in the table a correlation between device and structural parameters is presented


Validation of temperature stability

0

0,1

0,2

0,3

0,4

0,5

240 260 280 300 320 340 360 380 400

C, p

F

T, K

E=0 V/mkm

E=40 V/mkm

Two layer

One layer

Stoichiometry of the structure largely determines the dependence of capacitance on temperature. Dependence of capacitance on temperature is a negative effect because it reduces tunability. At present time we have obtained two layers structure with gradient stoichiometry that demonstrates high temperature stability of capacitance and due to that higher tunability.

The effective changing of stoichiometry by pressure is possible only in unique designed technological vacuum chamber (that is completely unique and patented by founders).

For modeling of spattering and deposition processes the unique math model and computer simulation tool are elaborated and licensed by founders.

Experimental two layers structure obtained by our team

Temperature dependence of capacitance


Validation of power handling capability

For correct device operation it is necessary that device capacitance varies under bias voltage only and doesn’t depend on microwave power. To experimental validation of device linearity, semiconductor and ferroelectric capacitive elements have been placed in resonance chamber. The peak on the curve of frequency dependence of transmission coefficient (S21) depends on capacitance value. If the capacitance value doesn’t depend on microwave power the peak on the curve remain sharp (curve 1). If the capacitance value changes under microwave power the resonance peak shifts to the higher frequency area (curve 2). At present time we can demonstrate very good power handling capability value (independence of capacitance on microwave power) for one layer structure (curve 1). Resonance curves for different ferroelectric (one

layer) elements S21, dB

-15

-20

-25

-30

-35

-40

-45

2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 f, GHz

1 2

The next step of the project – to obtain the multilayer structure that posses good power handling capability value that is a result of multiplexing of obtained result for one-layer structure.


Validation of tuning speed

Control pulse and phase response of the ferroelectric phase shifter

µ

5 ns 0.5 mks

control pulse

phase response

Tuning speed is one of the main parameters that define the behavior of the device such as response sensitivity. The tuning speed depends on quality of the interface electrode/nonlinear dielectric. The less number of defects the more fast response. The number of defects in turns could be dramatically reduce by stoichiometry variation. The quality of interface electrode/nonlinear dielectric can be validated by tuning speed. At the present time we obtain laboratory prototype of phase shifter that demonstrate perfect phase response (tuning speed) that is less than 5 nanosec.


Validation of tunability and quality factor

0

0,2

0,4

0,6

0,8

1

1,2

-15 -10 -5 0 5 10 15

C/C(

0)

U, V

One layer (experimental)

Multilayer (expected)

50

75

100

125

150

0 5 10 15 20

Quality factor at 1,5 GHz

U, V

One layer (experimental)

The dependence of capacitance on bias voltage The dependence of quality factor on bias voltage

Tunability and quality factor are the main parameters that define the behavior of the device such dynamical operating range and insertion losses. The higher tunability the wider operating range. The less bias voltage the better and bias voltage in its turn depends on dielectric film thickness. The thinner film the less bias voltage. At the present time we obtain laboratory prototype of one layer capacitive elements that demonstrate perfect quality factor and good tunability. The next step of the project – to obtain the multilayer structure that posses the same tunabilty but at the lower bias voltage and the same quality factor values that are a result of multiplexing of obtained results for one-layer structure.


Test fixture for tunability, quality factor and power handling capability validation

Our team have created measuring devices, which allow measuring main parameters of nonlinear structures with previously unattainable precision. The test devices are patented. The measurement technique is licensed. This accuracy allows to distinguish the subtle changing of multilayer structure parameters that is necessary for growth control. The measurement accuracy of quality factor is demonstrated on the figure below. Q

Measurement Accuracy of Q-test fixture proposed at 3 GHz

Measurement Accuracy of Agilent E4991A Analyzer at 3 GHz

U, V

f = 3 GHz

Comparison of measurement accuracy


Test fixture for switching time characterization

Place of the varactor installation under pressing

MW ports

Pulse or DC ports

The test fixture features: Ø  measurements of switching time from

minutes down to 1ns under pulses with amplitude up to 5kV is available;

Ø  small error of measurements of dynamical (pulse) C-V characteristics. Registration of C-variation with 0.1% scale;

Ø  measurements of switching time of ferroelectric bulk and film capacitors;

Ø  measurements of dynamical (pulse) CV characteristics

Ø  observation of hysteresis loops from dc up to 500MHz frequencies

Ø  measurements of dynamical polarization process in ferroelectrics and linear dielectrics

Our team have created device for switching time characterization. The IP rights on this device are protected. This device was implemented in two companies – Gennum and Paratek.

Project goals and estimated results

Project resume

Objectives: DINItex develops and plans to produce revolutionary tunable multi-layer non-linear dielectric chips and modules based on them for the wide range of RF applications including smart phones, mobile computers, automotive active safety systems

Products: Ø  2013 - Antenna modules for mobile devices Ø  2014 - High effective and low-cost automotive anti-collision radars and communication systems Ø  2015 - Novel generation of tunable acoustic devices, which shall exchange actual filter banks in smart mobile

applications by a single chip Ø  2015+ - New class of voltage tunable RF components

•  Tunable filters •  Tunable couplers •  Tunable generators •  Tunable power dividers •  Phase shifters •  Power amplifier tuners

Market: Ø  1 B of mobile phones yearly Ø  0,5 B mobile computers and tablets yearly, Ø  50 M of autos yearly


Business strategy: Ø  To become a global supplier of building blocks for the world's leading mobile phones, computers with a strong IP

portfolio Ø  To enter the market by proving the unique position of the technology through intensive JDPs with the major players

like Nokia, Apple, etc and major suppliers of automotive radar and antennas electronics Ø  To provide multiple return to Series A investor(s) by “trade sale” after the product is accepted by the market Ø  To provide multiple return to Series B investor(s) by setting up high volume manufacturing company with a significant

and stream of revenue and wide customer range, production can be ramped up through partnership and OEM Exits opportunities:

2014+ : deal with Rusnano or other strategic investor 2014+ : trade sale to blue chips in Mobile phones, computer industries and leaders of automotive electronics 2016+ : IPO

Value chain


Functional layers

deposition SMD

assembling Module

packaging End device Chip processing

Vertical integration allows Ø  significantly reduce costs at every level of production Ø maximize the efficiency of production of the final product Ø maximum control over product quality Ø  achieve rapid and cyclical introduction of innovative solutions, infrastructure optimization,

harmonization of business processes, technologies and competences Ø most effectively develop and adapt consumer electronic modules

The results: Ø  reducing costs and selling price Ø  independence from suppliers of intermediate goods

Functional layers growth

Multilayer structure processing

Surface Mounting of chips and rest of

components

Antenna module assembling and

packaging

Ø Mobile phones and smartphones

Ø Notebooks, netbooks, tablets

Ø Automotive anti-collision radars and communication systems

Ø Multimedia devices

Ø Microwave and

RF high power devices

Smartphones global market (adaptive matching circuit and BAW applications)


503 654

798 975

1 189

1 439

1 710

2012 2013 2014 2015 2016 2017 2018

Smartphone global market, M pcs.

20%

14,50%

14,20% 10,80%

10%

30,60%

Market shares

Samsung

Apple

Nokia

HTC

RIM

Others

Ø  The worldwide smartphone market grew 42.6% year over year in the third quarter of 2011 (3Q11), despite a slowdown within key mature markets. According to the International Data Corporation (IDC) vendors shipped 118.1 million units in 3Q11 compared to 82.8 million units in the 3Q10.

Ø  The smartphones share at mobile phone market shall grow up to 50% in 2017.

Ø  IDC expects smartphones sales rise to 975 million in 2015 Ø  IMS Research expects 800 million smartphone to sell or 35% of

the mobile handset market. They predict this figure will rise to over 1 billion in

Ø Morgan Stanley Research estimates sales of smartphones will exceed those of PCs in

Top Five Mobile Phone Vendors Ø  Samsung became the new leader in the worldwide

smartphone market Ø  Apple, after taking the number one spot last quarter from

Nokia, slipped to the number two spot worldwide Ø Nokia maintained its third place position on the strength of

its Symbian phones. Ø HTC moved up one spot and maintained its upward

momentum during 3Q11. Ø  RIM (Research In Motion) began shipping its new BB OS 7

smartphones to the market during 3Q11, including updated versions of the BlackBerry Bold, BlackBerry Curve, and the BlackBerry Torch.

Source: International Data Corporation (IDC)

Source: Gartner, Inc.

PC global market (adaptive matching circuit and BAW applications)


Ø  The latest mobile PC forecast from DisplaySearch’s highlights the impact of changing regional dynamics and the impact on the notebook and tablet PC businesses.

Ø Strong growth in shipments of notebook PCs into emerging markets will result in these markets passing mature markets in 2011.

Ø At the same time, shipments of tablet PCs into mature markets continue to lead emerging markets and are expected to throughout the forecast period.

Ø As a result, mobile PC shipments (including notebook, mini-note and tablet PCs) are expected to grow at double-digit rates through 2017, at which time shipments will reach nearly 800 million units, up from 277 million in 2011 and tablet PC will get about 45% of sales.

Ø  The tablet PC category expanded its role in the mobile PC market. The Y/Y shipment growth rate for tablets in 2011 reached 256%.

Ø  The main assumptions behind the latest forecast are that as

PC penetration rates rise in emerging markets, first time buyers are going to look to notebooks for the performance. At the same time, the convenience of tablet PCs with their instant-on, long battery life and portable form factors will be a welcome platform for existing PC owners.

Source: Quarterly Mobile PC Shipment and Forecast Report, NPD Display Search

21,10%

15%

11,60% 10,90% 7,50%

33,90%

PC market shares

Apple

HP

Dell

Acer Group

Lenovo

other

Source: Quarterly Mobile PC Shipment and Forecast Report, NPD Display Search

190 220 250 270 300 350 450 498 90 125 170 226 290

360 420

467

0

200

400

600

800

1 000

1 200

2011 2012 2013 2014 2015 2016 2017 2018

PC market, M pcs

Tablet PC

Notebooks

Automotive market (Electronically scanned antenna modules for automotive radars and communication systems)


Ø We are focusing on the vehicles equipped with active safety features like short-, mid- and long range radars

Ø Actually the only high-end automobiles are being equipped with active safety features, but the tendency shows rapid introduction of the features into low-end cars and is driven by the car safety regulations in EU, US and Japan

Ø  Thus analytics expect significant growth of the radar segment of automotive market.

Ø  It is predicted that the size of that segment shall be about 50 million pcs in 2018

Source: Plunkett Research, Ltd.

60 67

74 81

88 96

105 114

2011 2012 2013 2014 2015 2016 2017 2018

Automotive market, M pcs.

General Motors

14%

Toyota 12% Ford 9% Honda

6%

Chrysler 3% Daimler

3% Volkswagen

12%

Nissan 7%

Others 34%

Automotive market shares


7 12

19 25

32

40

49

2012 2013 2014 2015 2016 2017 2018

Autoradar market, M pcs.


Business targets and strategy


Strategy: Ø  To become a global supplier of building blocks for the world's leading mobile phones and computers with a strong IP portfolio; Ø  To enter the market by proving the unique position of the technology through intensive JDPs with the major players like Nokia,

Apple, etc and major suppliers of automotive radar and antennas electronics; Ø  To provide multiple return to Series A investor(s) by “trade sale” after the product is accepted by the market; Ø  To provide multiple return to Series B investor(s) by setting up high volume manufacturing company with a significant and

stream of revenue and wide customer range, production can be ramped up through partnership and OEM

Stage II: Mass production 2014-2018 (and further) Ø  To conquer at least 10% market share of HF tunable

device Ø Become cash positive in 2015 Ø  To reach 500M yearly turnover Ø  To provide 45% gross margin Ø  To provide 30% EBITDA Ø  To provide IRR 50%

Financing – Strategic Investor + Grants Investments needed – 74 M Euro The company value in 2018 is 1,5B Euro

2012-2013 2014 2015 2018

Stage I: Prototyping and technology commercialization 2012-2013 Ø  To continue technology development Ø  To protect IP by filing of 10-15 patent applications Ø  To create prototypes of three main products Ø  To sign a contract with one of the leading manufacture

of mobile phones or mobile computers.

Financing – VCF + Grants Investments needed – 5M Euro The company value in 2013 is 40M Euro

Exit strategy options


*  Various promising exit options even at early stage

2012

Funding 2012-2013

Equipment set-up Proof of concept/ Implement process Process fine tuning

2013

Market introduction Alliances with leaders on the mobile and automotive devices market Pilot line

Optional: Deal with

RUSNANO or other Strategic Investor Volume

Ramp-up

Trade sale to blue chip in Mobile phones and computer industries or

automotive leader

IPO

Prototyping and technology commercialization Mass production

Volume Ramp-up

Project plan and mile stones

2016 I II III IV

2014 I II III IV

2013 I II III IV

2012 I II III IV

2015 I II III IV

Ramp up of R&D activity

Equipment is installed Ramp up is completed

IP protection

Set up of supply chain

Technological parameters optimization

2017 I II III IV

2018 I II III IV

Prototype of products

Customer presentation of products

Agreement with potential customer about long term cooperation

Chips mass production in Landshut on rented facilities

Modules mass production in Russia facilities

Building up own factory for all production steps

Mass production at own plant

Mass production at own plant

SOP at own plant

Prototyping and commercialization

Mass production

46 13.11.12 CONFIDENTIAL

IPO

Technology commercialization and Pilot line in Landshut 2012-2014


Machinery and equipment are provided on a leasing basis, thus saving costs and reducing entrepreneurial risk: Ø  customized physical laboratories & clean rooms Ø  reactors Ø  lithography equipment Ø  chip processing equipment Ø  analytical and test equipment

§  The whole value chain technology developing §  Integration with the main worldwide known manufactures of end products

Ø Mobile phones Ø Mobile computers Ø Automotive applications

•  IP protection and holder of IP rights

Functional layers

deposition

Chip processing

Developing of chip processing technology

Module design and prototype assembling

Developing of epitaxial technology

Module design

Mass Production


Functional layers

deposition

Chip processing

2014-2016

SMD assembling

Module packaging

Germany (Landshut) Germany + Russia (St. Petersburg)

Ø  The production line shall be located in the rented foundry at Landshut till 2016

§  due to the lack of clean room facilities and infrastructure for them in Russia

§  to optimize cost and supply chain of the chip production

Ø Pilot line shall continue working rented facilities Ø Sales/purchasing office is partly located in Landshut to

provide optimal interface to potential customers/ suppliers. Ø  Total number of reactors is 11 Ø  Total number of lithography lines is 4

Ø  Till the ramping up of own factory in 2017 the assembling lines shall be located in the rented facilities in Russia

Ø  Final product shall be produced in Russia with the chips

supplied out of front-end facility in Landshut Ø Head quarter of the Company shall be located in Russia

Ø R&D department is located in the head quarter.

Ø R&D activities with focus on new product development based on the similar chip technology

By 2016 the own factory for whole production chain shall be completed in Russia Since 2017 all products are made in Russia

Functional layers deposition Chip processing SMD assembling Module

packaging

Since 2017 …

Team


Vitaly N. Osadchy, Lead of direction “matching circuits & radars”. co-founder, Electronic engineer (1994). Main focus: constructing and experimental testing of controlling devises and phased array antennas for microwave applications. He has over 60 publications in scientific journals and 8 patents. 2001 R&D 100 Award for technology of Electronically Scanning Antenna.

Dr. Anatoly K. Mikhaylov, Lead of direction “BAW”. co-founder, Electronic engineer in 2005 and PhD in 2010. He has 18 publications and 7 Russian patents. He won the first prize for the best young scientist’s paper at the 6th International conference MMA-2010 (Warsaw, Poland, 2010). Winner of «President’s of Russia grant for young doctors of philosophy».

§  One of the world strongest team in microwave device development originates from St.-Petersburg Electrotechnical University, Russia, with the unique synergy of material science specialists and radio engineering experts combined since years in one research group.

§  The team members own more than 30 issued patent and more than 200 publications in the field; §  Team core (10 people) is a perfect combination of young talents, experienced mid-age experts and gurus. Average age

is about 35 years old; §  More than 50% of team staff have a PhD grade

Prof. Dr. Andrey B. Kozyrev, co-founder, Electronic engineer (1968), Ph.D (1974), Full professor (1990) of the Department of Electronics and the head of the Microwave Laboratory. Last 25 years his general research interests have been in field of microwave electronics. He has more than 200 publications in scientific journals and more than 30 patents in Russia and abroad.

Dr. Denis Bychkovsky co-founder, graduated from Ioffer Institute of Russian Academy of Science, author of row scientific publications and patents in the field of solid state physics, highly experienced in project management, proven successful records of several start-up’s

Background and current status of work


Ø  Ion-plasma deposition technology for thin film Me/FE/Me structures with suitable MW parameters is elaborated;

Ø  Main associated technological operations (buffer layer deposition, lithography, etching etc.) are elaborated;

Ø  The set of new technological approaches is developed;

Ø  Special MW test-fixtures to provide the control of MW elements during and after their producing are elaborated, certificated and are in practical use in Russia and abroad;

Ø  The theoretical analysis of parameters of new devices on the base of multilayer structures is done;

Ø  The set of prototypes of MW devices, which are the base to develop the generation of new class of devices is elaborated.

The high qualification level of Lab’s stuff is confirmed by the following data: Ø  2001 R&D 100 Award for technology of Electronically Scanning Antenna, which have been included in the list of 100 best

technical-science works of USA in 2001 year (together with colleagues from NREL (USA) and Paratek Microwave Inc. (USA)).

Ø  In accordance with data of MEMS Investor Journal (May 2008) the laboratory “is one of the four laboratories taking leading position in the World in area of tunable microwave ferroelectric devices”.

Ø Eight USA governments (DOE) grants and more than 30 foreign contracts, among them National Renewable Energy Lab (USA), Gennum (Canada), Paratek Microwave Inc (USA)

Ø Microwave Year Prize at 27th European Microwave Conference (Jerusalem, 1997), first prize of MMA-2010 (Microwave Materials and Application) for the best work of young scientist (Warsaw, 2010).

Partners


London Imperial College is consistently rated amongst the world's best universities and it is a science-based institution with a reputation for excellence in teaching and research. It has a very strong basement for nonlinear dielectric research.

Micronova is Finland's National Research Infrastructure for micro- and nanotechnology, jointly run by VTT Technical Research Centre of Finland and Aalto University. Micronova's expertise covers the entire micro-nano innovation chain, from basic device physics and materials research to the development of new fabrication techniques and device prototypes, and even small scale manufacturing.

Fraunhofer-Gesellschaft, the largest organization for applied research in Europe. More than 80 research units, including 60 Fraunhofer Institutes, at different locations in Germany. The majority of more than 20,000 staff are qualified scientists and engineers. €1.8 billion annual research budget totaling.

Saint Petersburg Electrotechnical University "LETI" (ETU) is considered as one of the world largest education and research centers in Radio Engineering, Electrical Engineering, Electronics and Computer Science.

Forschungszentrum Jülich GmbH (Jülich Research Centre) is a member of the Helmholtz Association of German Research Centers and one of the largest research center in Europe. Research at Jülich is divided into four research areas: health, information, environment, and energy. The key competencies of physics and scientific computing provide the basis for world-class research in these areas

List of potential Referents


Professor Bob York

University of California at Santa Barbara, CA, USA

Professor York's research involves applying new materials advances to RF and power electronics. His group is developing high-power/high-efficiency electronics using wide band-gap (GaN) semiconductor technology, building on extensive expertise at UCSB in this area. He is co-director of the ONR MURI Center MINE (Millimeter-wave Initiative for Nitride Electronics). He is also a pioneer in applying thin-film ferroelectric technology for use in frequency-agile RF/wireless systems. He was awarded an IEEE MTT-S Outstanding Young Engineer Award in 2004, and received an Office of Naval Research Young Investigator Award in 1996. (Publications: 211; Citations: 2714; G-Index: 44; H-Index: 27)

[email protected]

Professor Neil McN. Alford

Imperial College London

Head of Department of Materials He is a member of the Electrical Engineering RAE panel, sits on the Advisory Board of Cambridge Massachusetts Institute, the Advisory Board, Antenova Ltd, a member of the DTI Working Group for the Quantum Metrology Programme at NPL and he is a consultant on technical programmes for the Gatsby Charitable Foundation. He is a fellow of the Institute of Physics, the Institute of Materials, Minerals and Mining and a fellow of the Institution of Engineering and Technology. He is an associate editor for the Journal of the American Ceramic Society. He has over 200 journal publications and is the author of 21 patents. (G-Index: 23; H-Index: 12)

[email protected]

Professor Spartak Gevorgian

Microwave and High Speed Electronics Research Center, Ericsson AB; Chalmers University of Technology

Since 1998, he has been a Professor with Chalmers University of Technology. Since 1996, he has also worked part time with Ericsson Microwave Systems AB (currently Ericsson AB), Mölndal, Sweden. He has authored or coauthored over 300 papers and conference presentations. He holds over 30 patents/patent applications. His research interests are physics, design, and experimental investigation of microwave devices and components based on ferroelectrics, silicon RF integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs), microwave photonic devices (optically controlled components), and modeling of passive coplanar components based on conformal mapping. (G-Index: 21; H-Index: 12)

[email protected]

Professor Alexander Tagantsev

Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland

Tagantsev is a theoretician of a broad domain of expertise from ferroelectricity and phonon physics to electrodynamics of superconductors. He is the author of key results on the theory of microwave materials, dielectric polarization in crystalline materials, and relaxor ferroelectricity. He is also known in the field ferroelectric thin films for elucidating works on the polarization switching and degradation in these systems. He authored or co-authored more than 200 articles (cited some 6000 times) and a comprehensive book on ferroic domains. (G-Index: 17; H-Index: 9)

[email protected]