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Atomic hydrogen adsorption behavior of boron nitride nanomaterial 1. Introduction 2. Sample preparation & Deuteration. 3. TOF 4. NEXAFS- Experiment & Calculation. 5. XPS-Experiment & Calculation. 6. PSID. 7. Why H/D prefers to adsorb on B site ? Kaveenga Rasika Koswattage (PhD) Senior Lecture Faculty of Applied Science, Sabaragamuwa University 1

Nano Materials to Devices - K.R Koswatta

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Page 1: Nano Materials to Devices - K.R Koswatta

Atomic hydrogen adsorption behavior of boron nitride nanomaterial

Outline

1. Introduction

2. Sample preparation & Deuteration.

3. TOF

4. NEXAFS- Experiment & Calculation.

5. XPS-Experiment & Calculation.

6. PSID.

7. Why H/D prefers to adsorb on B site ?

Kaveenga Rasika Koswattage (PhD) Senior Lecture

Faculty of Applied Science,

Sabaragamuwa University

1

Page 2: Nano Materials to Devices - K.R Koswatta

Transportation Fuel cell power technology Renewable

Sustainable

Light-duty vehicles

Light storage system

Introduction

Page 3: Nano Materials to Devices - K.R Koswatta

CNT BNNT

US DOE on board hydrogen system has proposed to achieve 5 wt % hydrogen storage by

Introduction

C-H

Hydrogenation degree

= 0.370.05

A. Nikitin et al., Surf. Sci. 602,

2575 (2008).

C 1s XPS

Bending of C–H

bonds

H adsorbed on

neighbor carbon

Hydrogen adsorption on BN is site selective

H

B N

Wu et al., J. Chem. Phys.

121, 8481 (2003).

V.A Margulis et al.,

springer , 275 (2007).

Graphite

Hydrogenation on BNNT > CNT Ex: R. Ma et al., J. Am. Chem.

Soc. 124 , 7672 (2002).

H atom prefers

to adsorb on the

top site of the B

H atom prefers

to adsorb on the

top site of the N

Two hydrogen atoms adsorbed on-top sites

of adjacent B and N atoms Z. Zhou et al., J. Phys. Chem. B

110, 13363 (2002).

Hydrogenation was examined using thin film of h-BN 3

Page 4: Nano Materials to Devices - K.R Koswatta

Ni(111)

substrate

·lattice constant

·atomic distance

lattice

matching

h-BN 2.51 Å

Ni(111) 2.49Å -0.4 %

Pd(111) 2.76Å 10 %

Pt(111) 2.89Å 15.2 %

Borazine

(B3N3H6)

N N B

B B

H

H H

H

H

H N

Ni(111) ~800 ℃

Precursor gas Nagashima et al., Phys.

Rev. B 51, 4606 (1995).

BN film on Ni(111) substrate

Chemical Vapor Deposition

Thin film of h-BN on a Ni(111) substrate was selected for the investigation

W. Auwarter et al., Surf. Sci.,

429, 229 (1999). h-BN on a Ni(111)

Well ordered Highly commensurate Perfect lattice match

C 1s VB

0 100 200 300 400 500

0

500

1000

1500

2000

Inte

nsi

ty /

cps

Binding Energy / eV

Ni 3s

Ni 3p

B 1s

N KLL Auger

N 1s

B KLL Auger

hν = 695 eV

Fig. XPS after formation of BN film on Ni(111)

Thickness of the BN film was estimated to be 6.6 Å 4

Page 5: Nano Materials to Devices - K.R Koswatta

5

Photon Factory- High Energy Accelerator Research Organization (KEK), Japan

Experiment using Synchrotron Radiation

Beam line 11-A

Page 6: Nano Materials to Devices - K.R Koswatta

F

BK EhE

X-ray Photoelectron spectroscopy (XPS)

(a). XPS spectra of clean HOPG

(b). H treated HOPG with H saturated coverage

A. Nikitin et al., Surf. Sci. 602, 2575 (2008).

(a)clean HOPG

(b).H treated

HOPG

6

Page 7: Nano Materials to Devices - K.R Koswatta

180 188 196 204 212 220 228

Vacuum

*

Core level

σ*

Unoccupied

levels

Excitation

Energy

Photon Energy / eV

Ab

sorp

tion I

nte

nsi

ty

Synchrotron

Radiation

*

σ*

Photon Energy (eV)

Ab

sorp

tion

in

ten

sity

(ar

b. un

its.

)

NEXAFS

σ*

*

(a) (b)

Continuum States

Eπ*

Eσ*

IP

IP

FL

ValenceBand σ*

(b). A typical B – Kedge NEXAFS spectrum of

bulk h-BN which shows two features, π* and σ*.

(a). Schematic representation of the processes involved in NEXAFS for unsaturated

compounds with double or triple bonds.

Near-edge X-ray absorption fine structure (NEXAFS)

I. Shimoyama et al., J. Elec. Spec. Relat. Phenom.

137, 573 (2004).

7

Page 8: Nano Materials to Devices - K.R Koswatta

Grazing incidence : Enhancement of 1s *

Normal incidence : Enhancement of 1s σ *

E

G razing

incidence

N ormal

incidence

N

G

* s *

O

O s

E

π orbital

σ orbital

E

sp2

θ=20º

θ=90º

Polarization dependence -NEXAFS

C K-edge NEXAFS spectra of single-crystal

graphite at various incident angles (θ )

R.A. Rosenberg et al., Phys.

Rev. B 33, 4034 (1986).

8

Page 9: Nano Materials to Devices - K.R Koswatta

② NEXAFS

Au mesh

試 I(h)

①XPS

I0 (h)

Synchrotron

radiation ring

A

A

hν=700 eV

Hot filament system

X-ray gun

QMS

Analyzer

Ion gun

Hot

filament

system

Ultra high vacuum chamber

Base pressure of the UHV chamber was ~8×10-8 Pa

Experimental

I(h)

I0 (h)

All the experiments were

performed at the BL-11A beam

line of the Photon Factory. BN/Ni(111)

07.0 A

10.0 V 9

Page 10: Nano Materials to Devices - K.R Koswatta

NEXAFS -Spectral change by atomic deuterium treatment

400 410 420 430 440In

ten

sity

(arb

. u

nit

)

N K-edge

Photon Energy / eV

Before

After

188 192 196 200 204

Inte

nsi

ty (

arb

. u

nit

)

B K-edge

Photon Energy / eV

π*B

π*A σ* Before

After

Experimental results-NEXAFS

Interaction change between

film and substrate by

deuterium adsorption

1.Formation of B-D bond or

2. Interaction change between film and

substrate by deuterium adsorption or

3.Resultant of these two phenomena. 10

Page 11: Nano Materials to Devices - K.R Koswatta

Spectral change between π*A

and σ*showing similar

polarization dependence like

π*A & π*B .

185 190 195 200 205 210

Inte

nsit

y (

arb

. u

ni )

Photon Energy / eV

angle ( ) = 20

angle ( ) = 35

angle ( ) = 55

B

D

Out of plane orientation – B-D bonds are perpendicular to the surface

Out of plane orientation was used for DV-Xα calculation

Spectral change between π*A & σ*

Formation of B-D bond

E SR

Polarization dependence NEXAFS

Before

After

Before

After

Before

After

B K-edge

11

Page 12: Nano Materials to Devices - K.R Koswatta

BN film- B27N27H18

Unoccupied

states

Vacuum

π*

σ* 0.5

0.5

One H on B site

One H on N site

Two H on adjacent B&N site

DV-Xα Calculation

Slater’s transition theory

☆Minimal basis set :

•2s & 2p for B&N

•1s for H

▲Model clusters :

optimization :

Win MOPAC / AM1

Model clusters Calculation method

B

N

H

( A molecular orbital calculation method)

12

Page 13: Nano Materials to Devices - K.R Koswatta

1. One H attached to B site

DV-Xα Calculation- NEXAFS

B 1s to LUMO

π* σ*

B-Without H

B-With H

13

Page 14: Nano Materials to Devices - K.R Koswatta

N-With H

N-Without H

2. One H attached to N site N 1s to LUMO

π* σ*

DV-Xα Calculation- NEXAFS

14

Page 15: Nano Materials to Devices - K.R Koswatta

XPS-Spectral change by atomic deuterium treatment

188 190 192 1940

1

2

3

4

Inte

nsi

ty (

arb

. u

nit

)

Binding Energy / eV

Additional component appeared at low BE

Before

After

B 1s

396 398 400 4020

1

2

3

Inte

nsi

ty (

arb

. u

nit

)

Binding Energy / eV

Broadening to high BE

Before

After

N 1s

Experimental results-XPS

15

Page 16: Nano Materials to Devices - K.R Koswatta

188 190 192 1940

1

2

3

4

Inte

nsi

ty (

arb

. u

nit

)

Binding Energy / eV

Before

After

B 1s

396 398 400 4020

1

2

3

Inte

nsi

ty (

arb

. u

nit

)

Binding Energy / eV

Before

After

N 1s

XPS calculation

XPS-Spectral change by atomic deuterium treatment

Cluster

Chemical shift ( eV)

Hydrogenated sites Neighboring sites

B 1s N 1s B 1s N 1s

B27N27H18+HB -0.7 N/A N/A -0.4

B27N27H18+HN N/A +2.2 -2.0 N/A

B27N27H18+2HBN -1.6 +2.2 N/A N/A

DV-Xα Calculation- XPS

B-D

16

Page 17: Nano Materials to Devices - K.R Koswatta

187 188 189 190 191 192 193 194 195

Binding Energy / eV

Inte

nsit

y (

arb

. u

ni )

BD

A

A* Rtop

Degree of deuteration was estimated to be 29 % considering only B site.

NEXAFS and XPS results imply that atomic deuterium adsorption

occurred on B site more preferentially than on N site

,100 topD

D

RAB

B

Degree of deuteration (%) =

Degree of deuteration

17

Page 18: Nano Materials to Devices - K.R Koswatta

Deuterium ion

X-ray

(N excitation)

X-ray

(B excitation)

Why PSID ?

NEXAFS and XPS spectroscopic methods are not considered to

be methods of directly detecting hydrogen from the surface

Photon stimulated ion desorption ( PSID)

PSID can be employed to study hydrogen adsorption sites on a BN film

Time of flight mass spectrometer

18

Page 19: Nano Materials to Devices - K.R Koswatta

PSID yield () spectra for D+ ion

Clear increase at the B

K-edge

0

40

80

120

160

184 188 192 196

395 400 405 410

B

Photon Energy / eV

N

D+

des

orp

tio

n y

ield

(

arb

. u

nit

)

Electron excited to

* state

B-D anti bonding

state

does not show clear increase in the N K-edge

N sites adsorbed by deuterium was smaller than B 19

Page 20: Nano Materials to Devices - K.R Koswatta

Why H/D prefers to adsorb on B site ??

Explanation is based on the frontier orbital theory

0.00

0.05

0.10

0.15

0.20

0.25

-20 -10 0 10 20

P

DO

S o

f B

Ground state

Energy / eV

B site

H

1st H atom

0.0

0.1

0.2

0.3 N 2s

N 2p

-20 -10 0 10 20

PD

OS

of

N

Energy / eV

N site

π* σ* π* σ* B site- without H N site- without H

Wu et el J. Chem. Phys.,

121 (17), 8481 (2003).

H atom chemisorbs

on the BN

The HOMO of H interacts

with the LUMO of the BN

20

Page 21: Nano Materials to Devices - K.R Koswatta

H

2nd H atom

H attached to B –Neighboring B&N

Neighboring B site

Ground state

Neighboring N site

Neighboring N site

Neighboring B site

-20 -10 0 10 200.0

0.1

0.2

0.3

Energy / eV

N 2s

N 2p

N P

DO

S

0.0

0.1

0.2

0.3

B P

DO

S

B 2s

B 2p

Why H/D prefers to adsorb on B site ??

21

Page 22: Nano Materials to Devices - K.R Koswatta

2H attached to adjacent B&N Zohu et al : Most stable

configuration

NEXAFS calculation : PDOS of B1s/N1s to LUMO transition

Clear spectral change in π* observed for B and N sites 22

Page 23: Nano Materials to Devices - K.R Koswatta

The hydrogenation properties of a h-BN thin film were investigated

as a model material of BN nanomaterials for chemisorption-based

hydrogen adsorption.

The degree of the deuteration was estimated to be 29 % from the

spectral change of the B 1s XPS spectra.

The XPS and NEXAFS spectra of h-BN on Ni(111) were interpreted

using the DV-Xα method, considering the core-hole effect.

The results for the B and N sites implied that deuteration mainly

occurs on B sites. The PSID results support the idea that B sites of BN

are preferentially adsorbed by atomic deuterium

Finally, I concluded that atomic hydrogen is preferentially adsorbed

on B sites in a single hydrogen adsorption mechanism on BN material.

Summary

23

Page 24: Nano Materials to Devices - K.R Koswatta

24

Page 25: Nano Materials to Devices - K.R Koswatta

Selective adsorption of atomic hydrogen

on a h-BN thin film

Outline

1. Introduction

2. Sample preparation & Deuteration.

3. TOF

4. NEXAFS- Experiment & Calculation.

5. XPS-Experiment & Calculation.

6. PSID.

7. Why H/D prefers to adsorb on B site ?

Kaveenga Rasika Koswattage

Page 26: Nano Materials to Devices - K.R Koswatta

the "forever fuel" that we can never run out of

HYDROGEN

It’s abundant, clean, efficient, and can be derived from diverse domestic resources.

Page 27: Nano Materials to Devices - K.R Koswatta
Page 28: Nano Materials to Devices - K.R Koswatta
Page 29: Nano Materials to Devices - K.R Koswatta
Page 30: Nano Materials to Devices - K.R Koswatta
Page 31: Nano Materials to Devices - K.R Koswatta

Light-duty vehicles

Light storage system

Storing hydrogen in light storage system is required Materials at nano scale

Page 32: Nano Materials to Devices - K.R Koswatta
Page 33: Nano Materials to Devices - K.R Koswatta

Carbon nanotubes (CNTs) are allotropes of

carbon(同素异形体)(graphite 石墨,diamond钻石, Fullerene)with a cylindrical

nanostructure. Nanotubes have been

constructed with length-to-diameter ratio of

up to 28,000,000:1,which is significantly

larger than any other material.

Discovered in 1991 by the Japanese electron microscopist Sumio Iijima.

Carbon nanotubes

Page 34: Nano Materials to Devices - K.R Koswatta

(a) (b)

Crystal structures: (a). Hexagonal boron nitride (h-BN) (b). Graphite.

Boron nitride (BN) nanomaterials

Page 35: Nano Materials to Devices - K.R Koswatta

Transportation Fuel cell power technology Renewable

Sustainable

Light-duty vehicles

Light storage system

Page 36: Nano Materials to Devices - K.R Koswatta

CNT

US DOE on board hydrogen system has proposed to achieve 5 wt % hydrogen storage by

Introduction

H2 H2

H2 H2 H2 H H

H H H

Quality of the sample problems

Contamination

Defects

Diameter dependence.

Single wall /Multi wall

1996 1998 2000 2002 2004 2006 2008

0.01

0.1

1

10

SW-CNT- Physisorption BNNT- Physisortption .

SW-CNT- Chemisorption

Hyd

rogen

up

tak

e /

wt%

Year

DOE target

Hydrogenation by ,

chemisorption >

physisorption

Nikitin et al. Nano

Letters, 8, 162 (2008).

Physisorption Chemisorption

Reported hydrogen uptakes …..

BNNT One of the

promising

candidates

Page 37: Nano Materials to Devices - K.R Koswatta

Volumetric and gravimetric hydrogen density of some selected hydrides.

Hydrogenation by chemisorption > physisorption

A. Zuttel et al, Phil. Trans. R. Soc. A 368, 3329 (2010)

Page 38: Nano Materials to Devices - K.R Koswatta

For graphite

Hydrogenation degree at saturation coverage of atomic hydrogen

adsorption and desorption of hydrogen as a function of temperature were

reported.

Formation of C-H bonds at the surface under atomic hydrogen treatment

employing X-ray photoelectron spectroscopy (XPS) was reported.

A. Nikitin et al, Ruffieux et al C-H

Hydrogenation

degree = 0.370.05

Saturation coverage of atomic hydrogen adsorption values estimated by

XPS and other techniques ( TDS) are coincides .

T. Zecho et al , A. Nikitin et al.

C-H

H adsorbed on neighbor carbon

bending of C–H bonds

Page 39: Nano Materials to Devices - K.R Koswatta

2. Hydrogen adsorption on BN is site selective

BN nano-materials

This suggestion/coverage for hydrogen adsorption has not been

experimentally verified

1. Hydrogenation on BNNT > CNT Ex: R. Ma et al ,J. Am. Chem.

Soc. 124 (26) ,7672 (2002).

H

B N

Wu et al., J. Chem. Phys.

121, 8481 (2003).

V.A Margulis et al.,

springer , 275 (2007).

H atom prefers

to adsorb on the

top site of the B

H atom prefers

to adsorb on the

top site of the N

Two hydrogen atoms adsorbed on-top sites

of adjacent B and N atoms Z. Zhou et al., J. Phys. Chem. B

110, 13363 (2002).

Hydrogenation was examined using thin film of h-BN

Page 40: Nano Materials to Devices - K.R Koswatta

Ni(111)

substrate

·lattice constant

·atomic distance

lattice

matching

h-BN 2.51 Å

Ni(111) 2.49Å -0.4 %

Pd(111) 2.76Å 10 %

Pt(111) 2.89Å 15.2 %

Borazine

(B3N3H6)

N N B

B B

H

H H

H

H

H N

Ni(111) ~800 ℃

Precursor gas

Well ordered

Highly commensurate

Perfect lattice match

BN film on Ni(111) substrate

Chemical Vapor Deposition

Thin film of h-BN on a Ni(111) substrate was selected for the investigation

h-BN on a Ni(111)

pressure of

1×10-4 Pa

W. Auwarter et al., Surf. Sci.,

429, 229 (1999).

Nagashima et al., Phys.

Rev. B 51, 4606 (1995).

Page 41: Nano Materials to Devices - K.R Koswatta

F

BK EhE

X-ray Photoelectron spectroscopy (XPS)

XPS spectra of clean HOPG (a) and H treated

HOPG with H saturated coverage (b).

A. Nikitin et al., Surf. Sci. 602, 2575 (2008).

(a)clean HOPG

(b).H treated

HOPG

Page 42: Nano Materials to Devices - K.R Koswatta

180 188 196 204 212 220 228

Vacuum

*

Core level

σ*

Unoccupied

levels

Excitation

Energy

Photon Energy / eV

Ab

sorp

tion I

nte

nsi

ty

Synchrotron

Radiation

*

σ*

Photon Energy (eV)

Ab

sorp

tion

in

ten

sity

(ar

b. un

its.

)

NEXAFS

σ*

*

(a) (b)

Continuum States

Eπ*

Eσ*

IP

IP

FL

ValenceBand σ*

(b). A typical B – Kedge NEXAFS spectrum of

bulk h-BN which shows two features, π* and σ*.

(a). Schematic representation of the processes involved in NEXAFS for unsaturated

compounds with double or triple bonds.

Near-edge X-ray absorption fine structure (NEXAFS)

I. Shimoyama et al., J. Elec. Spec. Relat. Phenom.

137, 573 (2004).

Page 43: Nano Materials to Devices - K.R Koswatta

Grazing incidence : Enhancement of 1s *

Normal incidence : Enhancement of 1s σ *

E

G razing

incidence

N ormal

incidence

N

G

* s *

O

O s

E

π orbital

σ orbital

E

sp2

θ=20º

θ=90º

Polarization dependence -NEXAFS

C K-edge NEXAFS spectra of single-crystal

graphite at various incident angles (θ )

R.A. Rosenberg et al., Phys.

Rev. B 33, 4034 (1986).

Page 44: Nano Materials to Devices - K.R Koswatta

X-ray gun

QMS

Analyzer

Ion gun

Hot filament

system

Ultra high vacuum chamber

Base pressure of the UHV chamber was ~8×10-8 Pa

Experimental

All the experiments were performed at the BL-11A beam line of the Photon Factory.

Page 45: Nano Materials to Devices - K.R Koswatta

QMS

Ion gun

Hot filament system

XPS-

analyzer

Manipulator

SR

I0 Monitor

(Au mesh)

Experimental chamber set up for the experiment at the BL-11A

Bending magnet beamline

Energy range of 70 eV – 1900 eV

Max. photon flux of 1012 photons/sec

Resolving power 500 - 4000

Experimental

BL- 11A at KEK-PF

Page 46: Nano Materials to Devices - K.R Koswatta

Ni(111)

STEP 1. Ar+ sputtering-

{Ni(111) substrate}

STEP 2. Heated Ni(111) substrate to ~800 ℃

STEP 3.

Introducing borazine

Borazine (B3N3H6)

N N B

B B

H

H H

H

H

H N

Sample preparation

Chemical Vapor Deposition

pressure of

1×10-4 Pa

Nagashima et al., Phys. Rev. B 51, 4606 (1995).

Page 47: Nano Materials to Devices - K.R Koswatta

Hot filament system

BN/Ni(111)

07.0 A

10.0 V

2 3 4 5 6 7 8

800

1000

1200

1400

1600

1800

2000

T

emper

ature

/ C

Current / A

Degree of dissociation of a hot filament

system as a function of temperature Filament temperature as a function of current

C. Eibl et al, J. Vac. Sci. Technol. A 16, 2979 (1998).

Page 48: Nano Materials to Devices - K.R Koswatta

2. NEXAFS

Au mesh

I(h)

1. XPS

I0 (h)

Synchrotron

radiation ring

A

A

hν=700 eV

I(h)

I0 (h)

Spectroscopic measurements…………..

Schematic diagram of the

experimental arrangement

for ion TOF measurements

CFD

MCA

Pre-AMP

TAC 1/312

Divider

RF cavity

( 500 MHz) AMP

STOP

START

3. TOF

Experimental

Page 49: Nano Materials to Devices - K.R Koswatta

Thin film of BN on Ni(111)

Ni (111)

BN thin film

IN1s IB1s

INi3s

t

Composition ratio & Thickness

0

500

hv = 192.1 ,

H+

D +

0

D +

H+

Sample annealed

at 200 C Supposed to

be due to

water

hν =

192.1 eV

sN

sB

sB

sN

I

I

N

B

1

1

1s1B

1s1N

)(

)(

][

][

s

s

)/exp(

)/exp(1

)(

)(

BNin 3s Ni

BNin 1s B

Ni

B

Niin 3s Ni

BNin 1s B

3s Ni

1s B

3s Ni

1s B

s

s

t

t

n

n

I

I

XPS spectrum of as-deposited

BN film on Ni(111)

Equations for estimation of Composition ratio & Thickness

Thickness of the BN film was estimated to be 6.6 Å

[B]/[N] was estimated to be 0.98

C 1s

Page 50: Nano Materials to Devices - K.R Koswatta

Sample annealed at 200 C

TOF spectrum after deuterium treatment

Supposed to be

due to water

hν = 192.1 eV

After deuterium treatment

K.R. Koswattage et al., J. Chem. Phys., 135, 014706 (2011).

Page 51: Nano Materials to Devices - K.R Koswatta

NEXAFS -Spectral change by atomic deuterium treatment

400 410 420 430 440In

ten

sity

(arb

. u

nit

)

N K-edge

Photon Energy / eV

Before

After

188 192 196 200 204

Inte

nsi

ty (

arb

. u

nit

)

B K-edge

Photon Energy / eV

π*B

π*A σ* Before

After

Experimental results-NEXAFS

Interaction change between

film and substrate by

deuterium adsorption

1.Formation of B-D bond or

2. Interaction change between film and

substrate by deuterium adsorption or

3.Resultant of these two phenomena.

K.R. Koswattage et al., J. Chem. Phys., 135, 014706 (2011).

Page 52: Nano Materials to Devices - K.R Koswatta

Spectral change between π*A

and σ*showing similar

polarization dependence like

π*A & π*B .

185 190 195 200 205 210

Inte

nsit

y (

arb

. u

ni )

Photon Energy / eV

angle ( ) = 20

angle ( ) = 35

angle ( ) = 55

B

D

out of plane orientation – B-D bonds are perpendicular to the surface

out of plane orientation was used for DV-Xαcalculation

Spectral change between π*A & σ*

Formation of B-D bond

E SR

Polarization dependence NEXAFS

Page 53: Nano Materials to Devices - K.R Koswatta

BN film- B27N27H18

Unoccupied

states

Vacuum

π*

σ* 0.5

0.5

One H on B site

One H on N site

Two H on adjacent B&N site

DV-Xα Calculation

Slater’s transition theory

☆Minimal basis set :

•2s & 2p for B&N

•1s for H

▲Model clusters :

optimization :

Win MOPAC / AM1

Model clusters Calculation method

( A molecular orbital calculation method)

B

N

H

Page 54: Nano Materials to Devices - K.R Koswatta

1. One H attached to B site

DV-Xα Calculation- NEXAFS

B 1s to LUMO

π* σ*

B-Without H

B-With H

Page 55: Nano Materials to Devices - K.R Koswatta

N-With H

N-Without H

2. One H attached to N site N 1s to LUMO

π* σ*

DV-Xα Calculation- NEXAFS

Page 56: Nano Materials to Devices - K.R Koswatta

3. One H attached to B site-Neighbouring B and N

Neighbouring B

Neighbouring N

DV-Xα Calculation- NEXAFS

Page 57: Nano Materials to Devices - K.R Koswatta

4. One H attached to N site-Neighbouring B and N

Excitation Energy / eV

Excitation Energy / eV

188 192 196 200 204 208

400 404 408 412

Inte

nsi

ty (

arb

. u

nits

) B 2p

B 2s

N 2p

N 2s

Neighbouring B

Neighbouring N

DV-Xα Calculation- NEXAFS

Page 58: Nano Materials to Devices - K.R Koswatta

Cluster dependence B

N

H

B48N48H24

B12N12H12

DV-Xα Calculation- NEXAFS

Page 59: Nano Materials to Devices - K.R Koswatta

B48N48H24 B12N12H12

Page 60: Nano Materials to Devices - K.R Koswatta

XPS-Spectral change by atomic deuterium treatment

188 190 192 1940

1

2

3

4

Inte

nsi

ty (

arb

. u

nit

)

Binding Energy / eV

Additional component appeared at low BE

Before

After

B 1s

396 398 400 4020

1

2

3

Inte

nsi

ty (

arb

. u

nit

)

Binding Energy / eV

Broadening to high BE

Before

After

N 1s

Experimental results-XPS

Page 61: Nano Materials to Devices - K.R Koswatta

Cluster

Chemical shift ( eV)

Hydrogenated sites Neighboring sites

B 1s N 1s B 1s N 1s

B27N27H18+HB -0.7 N/A N/A -0.4

B27N27H18+HN N/A +2.2 -2.0 N/A

B27N27H18+2HBN -1.6 +2.2 N/A N/A

DV-Xα Calculation- XPS

188 190 192 1940

1

2

3

4

Inte

nsi

ty (

arb

. u

nit

)

Binding Energy / eV

Before

After

B 1s

396 398 400 4020

1

2

3

Inte

nsi

ty (

arb

. u

nit

)

Binding Energy / eV

Before

After

N 1s

XPS calculation

XPS-Spectral change by atomic deuterium treatment

B-D

NEXAFS and XPS results imply that atomic deuterium

adsorption occurred on B site more preferentially than on N site

187 188 189 190 191 192 193 194 195

Binding Energy / eV

Inte

ns

ity

( a

rb .

un

i )

BD

A

A* Rtop

Degree of deuteration was estimated to be 29 % considering only B site.

,100 topD

D

RAB

B

Degree of deuteration (%) =

Degree of deuteration

Page 62: Nano Materials to Devices - K.R Koswatta

Deuterium ion

X-ray

(N excitation)

X-ray

(B excitation)

Why PSID ?

NEXAFS and XPS spectroscopic methods are not considered to

be methods of directly detecting hydrogen from the surface

Photon stimulated ion desorption ( PSID)

PSID can be employed to study hydrogen adsorption sites on a BN film

Time of flight mass spectrometer

Page 63: Nano Materials to Devices - K.R Koswatta

Single bunch

SR

PF- Storage

ring

CFD

MCA

Pre-AMP

TAC 1/312

Divider

RF cavity

( 500 MHz)

AMP

STOP

START

TOF-MS measurement system

Schematic diagram of the experimental arrangement for ion TOF measurements

Page 64: Nano Materials to Devices - K.R Koswatta

PSID yield () spectra for D+ ion

Clear increase at the B

K-edge

0

40

80

120

160

184 188 192 196

395 400 405 410

B

Photon Energy / eV

N

D+

des

orp

tio

n y

ield

(

arb

. u

nit

)

Electron excited to

* state

B-D anti bonding

state

does not show clear increase in the N K-edge

N sites adsorbed by deuterium was smaller than B

K.R. Koswattage et al., J. Appl. Surf. Sci., 258, 1561 (2011).

Page 65: Nano Materials to Devices - K.R Koswatta

Why H/D prefers to adsorb on B site ??

Explanation is based on the frontier orbital theory

0.00

0.05

0.10

0.15

0.20

0.25

-20 -10 0 10 20

P

DO

S o

f B

Ground state

Energy / eV

B site

H

1st H atom

0.0

0.1

0.2

0.3 N 2s

N 2p

-20 -10 0 10 20

PD

OS

of

N

Energy / eV

N site

π* σ* π* σ* B site- without H N site- without H

Wu et el J. Chem. Phys.,

121 (17), 8481 (2003).

H atom chemisorbs

on the BN

The HOMO of H interacts

with the LUMO of the BN

Page 66: Nano Materials to Devices - K.R Koswatta

H

2nd H atom

H attached to B –Neighboring B&N

Neighboring B site

Ground state

Neighboring N site

Neighboring N site

Neighboring B site

-20 -10 0 10 200.0

0.1

0.2

0.3

Energy / eV

N 2s

N 2p

N P

DO

S

0.0

0.1

0.2

0.3

B P

DO

S

B 2s

B 2p

Why H/D prefers to adsorb on B site ??

Page 67: Nano Materials to Devices - K.R Koswatta

2H attached to adjacent B&N Zohu et al : Most stable

configuration

NEXAFS calculation : PDOS of B1s/N1s to LUMO transition

Clear spectral change in π* observed for B and N sites

Page 68: Nano Materials to Devices - K.R Koswatta

The hydrogenation properties of a h-BN thin film were investigated

as a model material of BN nanomaterials for chemisorption-based

hydrogen adsorption.

The degree of the deuteration was estimated to be 29 % from the

spectral change of the B 1s XPS spectra.

The XPS and NEXAFS spectra of h-BN on Ni(111) were interpreted

using the DV-Xα method, considering the core-hole effect.

The results for the B and N sites implied that deuteration mainly

occurs on B sites. The PSID results support the idea that B sites of BN

are preferentially adsorbed by atomic deuterium

Finally, I concluded that atomic hydrogen is preferentially adsorbed

on B sites in a single hydrogen adsorption mechanism on BN material.

Summary

Page 69: Nano Materials to Devices - K.R Koswatta

6th International conference of DV-Xα was held in Korea .

Awarded best research in poster and oral section.