International Journal of Microelectronics and Digital Integrated Circuits (Vol 2 Issue 2)

International Journal of

Microelectronics & Digital Integrated Circuits

Jul–Dec 2016

eISSN: 2456-3988

IJMDIC

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« International Journal of Radio Frequency Design« International Journal of VLSI Design and Technology« International Journal of Embedded Systems and Emerging

Technologies« International Journal of Digital Electronics« International Journal of Digital Communication and Analog

Signals

« International Journal of Housing and Human SettlementPlanning

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Computer Science and Engineering « International Journal of Wireless Network Security« International Journal of Algorithms Design and Analysis« International Journal of Mobile Computing Devices« International Journal of Software Computing and Testing« International Journal of Data Structures and Algorithms

Nanotechnology« International Journal of Applied Nanotechnology« International Journal of Nanomaterials and Nanostructures« International Journals of Nanobiotechnology

« International Journal of Solid State Materials« International Journal of Optical Sciences

Physics

« International Journal of Renewable Energy and itsCommercialization

« International Journal of Environmental Chemistry« International Journal of Agrochemistry« International Journal of Prevention and Control of Industrial

Pollution

Civil Engineering« International Journal of Water Resources Engineering« International Journal of Concrete Technology« International Journal of Structural Engineering and Analysis« International Journal of Construction Engineering and

Planning

Electrical Engineering« International Journal of Analog Integrated Circuits« International Journal of Automatic Control System« International Journal of Electrical Machines & Drives« International Journal of Electrical Communication

Engineering« International Journal of Integrated Electronics Systems and

Circuits

Material Sciences and Engineering « International Journal of Energetic Materials« International Journal of Bionics and Bio-Materials« International Journal of Ceramics and Ceramic Technology« International Journal of Bio-Materials and Biomedical

Engineering

Chemistry « International Journal of Photochemistry« International Journal of Analytical and Applied Chemistry« International Journal of Green Chemistry« International Journal of Chemical and Molecular

Engineering

« International Journal of Electro Mechanics andMechanical Behaviour

« International Journal of Machine Design andManufacturing

« International Journal of Mechanical Dynamicsand Analysis

« International Journal of Fracture and damageMechanics

« International Journal of Structural Mechanicsand Finite Elements

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Biotechnology « International Journal of Industrial Biotechnology and

Biomaterials« International Journal of Plant Biotechnology« International Journal of Molecular Biotechnology« International Journal of Biochemistry and Biomolecules« International Journal of Animal Biotechnology and

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Nursing « International Journal of Immunological Nursing« International Journal of Cardiovascular Nursing« International Journal of Neurological Nursing« International Journal of Orthopedic Nursing« International Journal of Oncological Nursing

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Dear Readers,

We would like to present, with great pleasure, the inaugural volume of a new scholarly

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Managing Director

1. Modeling and Simulation of n-ZnO/i-ZnO/Si p-i-n Heterojunction Solar Cell Nidhi Sinha, Varun Chandra, Arun Dev Dhar Dwivedi 1

2. The 8051 Microcontroller Based Train Automation System Using Solar Panel Sanjay Singh Thakur, Gagan Sarin 8

3. Detection of Environment Ionization Radiation with GM TubeKripal Singh Gurjar, Rakesh Narvey 15

4. Object Detecting Line Follower RobotRahul Sharma 20

5. Study and Implementation of INP MIS Structure and GaAs FET Devices for Electric Control ApplicationsE.N. Ganesh 25

Contents

IJMDIC (2016) 1–7 © JournalsPub 2016. All Rights Reserved Page 1

International Journal of Microelectronics and Digital Integrated Circuits

eISSN: 2456-3988 Vol. 2: Issue 2

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Modeling and Simulation of n-ZnO/i-ZnO/Si p-i-n Heterojunction

Solar Cell

Nidhi Sinha1, Varun Chandra2, Arun Dev Dhar Dwivedi3* Department of Electrical and Electronics Engineering, Poornima University, Jaipur, India

ABSTRACT

This paper presents 2D numerical simulation of n-ZnO/i-ZnO/p-Si p-i-n heterojunction solar cell using commercial device simulation software ATLAS from Silvaco Inc. This work deals with the design and performance optimization of p-i-n heterojunction solar cell using two dimensional computer aided design (TCAD) tool ATLAS from Silvaco Inc. The device has been simulated and analyzed with respect to the I-V characteristics of the device in dark and illuminated condition. Further figure of merits like Isc, Voc, fill factor, internal and external quantum efficiency maximum power generated and conversion efficiency of the solar cell have been extracted from the I-V characteristics of the device. The simulation results indicate that the n-ZnO/i-ZnO/p-Si p-i-n heterojunction solar cell could be a good candidate for solar cells. Keywords: band gap, film, simulation, solar cell INTRODUCTION

ZnO thin films are now a day’s attracting researchers because of its possible use as an active semiconductor material and its immense application potential in short wavelength optoelectronic devices. ZnO is a member of TCO (transparent conductive oxides) family, together with indium tin oxide (ITO) and tin oxide (TO). ZnO is a very interesting material, due to his high transmittance in the visible region and to its high chemical, thermal and mechanical stability. It is a semiconductor material with a hexagonal structure [1]. ZnO has a direct and wide band gap (Eg = 3.7eV) in the near-UV spectral region and a large exciton binding energy (~60 meV) so that excitonic emission processes can persist at or even above room temperature. ZnO crystallizes in the wurtzite structure, the same as GaN, but, in contrast, ZnO is available as large bulk single crystals [2]. The great benefits of using ZnO thin films in transparent electronic devices lies in the fact that it is possible to grow at room

temperature high quality and transparent polycrystalline zinc oxide films [3]. There are numerous technological methods used to deposit ZnO (pulse laser deposition, radio-frequency magnetron sputtering, atomic layer deposition etc.). With a wide band gap, high transparency and low resistivity material, it can be used as a window layer for visible light and active layer for UV light simultaneously in heterojunction based solar cells. This twofold part of ZnO material in heterojunction solar cells offers a few favourable circumstances, for example, a phenomenal blue light response, simple processing steps, low handling temperatures, and non-lethality ideals [4, 5]. Depositing ZnO over Si acts as a window for photon transfer, provides higher built in potential to increase open circuit voltage and passivates the surface

IJMDIC (2016) 8-14 © JournalsPub 2016. All Rights Reserved Page 8

International Journal of Microelectronics and Digital Integrated Circuits eISSN: 2456-3988

Vol. 2: Issue 2 www.journalspub.com

The 8051 Microcontroller Based Train Automation System Using

Solar Panel

Sanjay Singh Thakur1*, Gagan Sarin2 1Department of Electronics and Communication, SGSITS, Ujjain, India

2Department of Electronics and Communication, PITS, Ujjain, India

ABSTRACT

Now a day’s public is facing many threats from the railway department by which they are hesitating to plan a train journey. The main reason for this is due to the accidents that occur due to negligence of train drivers. Though the railway department is trying to take actions to decrease such informal things but couldn’t see the face of success. To help out the department we have designed our system. We are seen in the railway the many problems are face and the many workers are required in railway so we proposed a project according to requirement of railway. This proposed paper is introduced to railway gate controlling train intelligence. It means we reduce the accident in the railway because we use the intelligence train. In the intelligence train we include the driverless train(in this we defined the two station Ujjain and Indore and train will automatic stop at the station and after some second the train will start and this process run continuously) and also the IR sensor are used. (This is used to define the obstacle in front of train).This paper also provide the time limitation and the main problem in railway i.e. delay of train. Keywords: automatic gate controller, DC motor, IR sensor, LCD, microcontroller

INTRODUCTION

The railway network of India is the biggest in south Asia and most complicated in all over the world. There are so many different types of train’s local, fast, super-fast, passenger, goods…. etc. and there so many multiple routs. In this paper, we try to give the same prototype for this type of trains. We are using microcontroller 8051 as CPU. A microcontroller is a self-contained system with peripherals, memory and a processor that can be used as an embedded system [1]. The motion of the train is controlled by DC Motor, for displaying message in the train we are using LCD Display of two lines. The train is designed for two stations, named as Ujjain & Indore. The Stoppage time is of 2Sec. There is a LCD display for showing various messages in the train for passengers. Before starting at station the train blows the buzzer. Whenever any engine observer an obstacle on its track it

will stops automatically the train. When the obstacle or other trains are removed from the track then train will start and go on. The proposed project is designed using 8051 microcontroller to avoid railway accidents at the track when two train are at same track, This project utilizes two powerful IR module; two pair of IR module are fixed at one train at front and back side of the train and the two pair of IR module are used at other train because when the two trains are at same track than the train IR module observe the obstacle at track than the train will stop (motor will stop). We are also including automatic gate controller. In this section we are including read switch (this is magnetically


International Journal of Microelectronics and Digital Integrated Circuits

eISSN: 2456-3988 Vol. 2: Issue 2

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Detection of Environment Ionization Radiation with GM Tube

Kripal Singh Gurjar*, Rakesh Narvey

Department of Electrical Engineering, Madhav Institute of Technology and Science, Gwalior, India

ABSTRACT

For environmental ionizing radiation hazard monitoring applications, very sensitive detector electronics has been developed. Experiments were performed using International Standard beta and gamma sensitive Mica window type GM Tube LND-712 from LND Inc. USA and Russian fast GM Tube with Aluminium energy compensated shield. Both tubes were operated with regulated DC high voltage power supply in the range of 300V to 500V range using Matsusada Japan make 1kV 5W programmable regulated high voltage power supply. LND-712 GM Tube has operating range from 450V to 650V. LND-712 was operated at 500V which is the mid-range of the plateau response for this tube. It has a dead time of about 100us. Russian Tubes is low diameter and has lower operating voltage of 320V to 400V and also has less dead time of 50us. Peak pulse charge current for each event detected was 15uA for which pulse voltage of about 15V was formed across 1M load resistor. Pulse shape was found to be very stable and natural cosmic ray background event rate detected by the GM Tube in Gwalior was in the range of 50 to 120 counts per minute in about 5uR/hour cosmic ray background. GM Tubes were also tested with 660keV Gamma Cs-137 low activity Gamma radiation source. Radiation interaction with matter and energy transfer by the ionizing radiation within GM Tube, charge multiplication and charge collection leading to pulse shape formation will be discussed. Results obtained with the tested GM Tube, the designed circuit scheme and its performance on the test bench system will be presented. Keywords: becquerals, computed tomography, gray, millisievert, radiation absorbed dose INTRODUCTION This paper presents background information into the theory and importance of radiation detection, specifically focusing on the design and test of a radiation detection device called Environmental ionization survey meter. This device is consumer level Geiger counter that is capable of measuring ionizing radiation which can be harmful to human health. A portable ionization radiation survey meter is used in a wide range of medical and industrial application where high energy radioactive sources are used for diagnosis and testing purpose [1]. This discussion will make the need for the power supply obvious and will help determine the design requirements for the boost power supply. It is also relevant to

explain the operation of the Geiger tube first since it is what converts radiation into an electrical signal and therefore is the most important single component of the project. Geiger tube consists of a metal, filled with either helium or argon gas. The anode of the tube is placed in the center, surrounded by the gas. The cathode is electrically connected to the outer shell of the tube. A high potential (500 V) is placed across the anode and cathode. When a radioactive particle/wave collides with and enters the tube, the high voltage will cause the radiation to ionize the gas molecules. Electrons are then ejected from


International Journal of Microelectronics and Digital Integrated Circuits eISSN: 2456-3988


Object Detecting Line Follower Robot

Rahul Sharma* Maharana Pratap Group of Institutions, Institute of Technology and Sciences, Lucknow, India

ABSTRACT

Line following robot is a robot car that can follow a path. The path can be visible like a white line on the black surface (or vice-verse). As a result of this line following property it has many applications in future and now itself. Lines following robot with pick and arrangement abilities are ordinarily utilized as a part of assembling plants. These proceed onward a predetermined way to pick the part from indicated area and place them on desired areas. Basically, a line-following robot is self-working robot that recognizes and follows a line drawn on the floor. The way to be taken is shown by a white line on a dark surface. The control system utilized must detect the line and move the robot to remain on course while always amending the wrong moves utilizing feedback mechanism, thus shaping a basic yet viable closed-loop system. As a software engineer you get a chance to "educate" the robot how to take after the line in this manner giving it a human-like property of reacting to stimuli. The robot has two sensors installed underneath the front part of the body, and two DC motors drive wheels moving forward. A circuit inside takes an info motion from two sensors and controls the speed of wheels' revolution. The control is done in a manner that when a sensor detects a white line, the engine backs off or even stops. Then the difference of rotation speed makes it possible to make turns. Keywords: line follower, object detection, receiver, robot, transmitter

INTRODUCTION

Line follower is a machine that can follow a path. The path can be visible like a black. The line following robot, operates as the name specifies. It is programmed to follow a dark line on a white background and detect turns or deviations and modify the motors appropriately [1]. The optical sensor is an array of commercially available IR reflective type sensors. The core of the robot is the ATMEL16 microcontroller. The speed control of the motors is achieved by the two PWM modules in the µC. The direction control is provided by 2 I/O pins. The H-Bridge motor driving/control chip takes these signals and translates it into current direction entering the motor armature [2]. The motors require isolate supply for operation. The differential directing system is utilized to turn the robot. In this

system, each back wheel has a committed engine while the front wheels are allowed to pivot. To move in a straight line, both the engines are given a similar voltage (same extremity). To deal with a turn of various sharpness, the motor in favor of the turn required is given lesser voltage. To take a sharp turn, its extremity is switched. The control has 6 methods of operation, turn left/right, move left/right, and float left/right. The real activity is created by controlling the bearing/speed of the two engines (the two back wheels), consequently bringing about a turn. The genuine execution is a conduct based (neural) control with the sensors giving the data sources. The robot can likewise be


International Journal of Microelectronics and Digital integrated circuits eISSN: 2456-3988


Study and Implementation of INP MIS Structure and GaAs FET

Devices for Electric Control Applications

E.N. Ganesh* Department of ECE, Saveetha Engineering College, Chennai, India

ABSTRACT

Compound semiconductors are well known for its high speed due to its higher mobility. Indium Phosphide and Gallium Arsenide are the compound semiconductor material considered in this paper for its study and characterization. Indium Phosphide MIS devices can be fabricated and its characteristics are studied. Here Indium Phosphide MIS capacitor is used as test vehicle for fabrication of other MIS devices. We noted down its breakdown voltage and leakage current. MIS devices can be used for fabricating Bio-electrodes in Medical applications. Then we have simulated GaAs Field Effect transistor devices as switches or Inverters. The devices made up of GaAs can be used as Logical elements in Machine controlled systems. We considered two examples of Machine Controlled system and can be modeled as Logical elements. GaAs NOT, NAND, NOR Circuits are drawn and simulated and its characteristics are noted down. We conclude that Compound semiconductor devices have higher response time and less power compared to silicon. Keywords: compound semiconductors, gallium arsenide, indium phosphide, metal insulator semiconductors

INTRODUCTION

Gallium Arsenide and Indium phosphide are compound semiconductor material for its high speed and high-density integrated circuits. GaAs and InP are direct band gap material. Therefore it can be used for fabricating high-speed Electronic devices. The wider energy gap of GaAs (1.43 eV) and InP (1.34 eV) makes it attractive for operation at higher temperatures. GaAs and InP has high electron mobility (4500 cm2 / V.sec) [2] and high velocity overshoot effects than Silicon. This paper discusses about devices made of InP and GaAs. Indium Phosphide

Metal insulator Semiconductor capacitor made of Indium phosphide is fabricated and its characteristics are studied. Detail fabrication steps are listed and the MIS structure is tested for its I-V and C-V

characteristics. From the characteristics Breakdown voltage, Leakage current, Interface state density at the surface can be found. Metal Insulator semiconductor devices are used to fabricate Bio-electrodes for Nano - Medical Applications. We fabricated capacitor type device and studied its characteristics. The study gives ideas about other MIS device fabrication. Gallium Arsenide

For GaAs we have simulated and modeled as logic elements for combinational and sequencing control in control system. GaAs FET device has high response time and less power dissipation compared to silicon made devices. Sequencing control


Microelectronics & Digital Integrated Circuits

Jul–Dec 2016

eISSN: 2456-3988

IJMDIC

Mechanical Engineering

Electronics and Telecommunication Chemical Engineering

Architecture

Office No-4, 1 Floor, CSC, Pocket-E,Mayur Vihar, Phase-2, New Delhi-110091, India

E-mail: [email protected]

¬ International Journal of Thermal Energy andApplications

¬ International Journal of Production Engineering¬ International Journal of Industrial Engineering

and Design¬ International Journal of Manufacturing and

Materials Processing¬ International Journal of Mechanical Handling and

Automation

« International Journal of Radio Frequency Design« International Journal of VLSI Design and Technology« International Journal of Embedded Systems and Emerging

Technologies« International Journal of Digital Electronics« International Journal of Digital Communication and Analog

Signals

« International Journal of Housing and Human SettlementPlanning

« International Journal of Architecture and Infrastructure Planning

« International Journal of Rural and Regional Planning Development

« International Journal of Town Planning and Management

Applied Mechanics

5 more...

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5 more...

Computer Science and Engineering « International Journal of Wireless Network Security« International Journal of Algorithms Design and Analysis« International Journal of Mobile Computing Devices« International Journal of Software Computing and Testing« International Journal of Data Structures and Algorithms

Nanotechnology« International Journal of Applied Nanotechnology« International Journal of Nanomaterials and Nanostructures« International Journals of Nanobiotechnology

« International Journal of Solid State Materials« International Journal of Optical Sciences

Physics

« International Journal of Renewable Energy and itsCommercialization

« International Journal of Environmental Chemistry« International Journal of Agrochemistry« International Journal of Prevention and Control of Industrial

Pollution

Civil Engineering« International Journal of Water Resources Engineering« International Journal of Concrete Technology« International Journal of Structural Engineering and Analysis« International Journal of Construction Engineering and

Planning

Electrical Engineering« International Journal of Analog Integrated Circuits« International Journal of Automatic Control System« International Journal of Electrical Machines & Drives« International Journal of Electrical Communication

Engineering« International Journal of Integrated Electronics Systems and

Circuits

Material Sciences and Engineering « International Journal of Energetic Materials« International Journal of Bionics and Bio-Materials« International Journal of Ceramics and Ceramic Technology« International Journal of Bio-Materials and Biomedical

Engineering

Chemistry « International Journal of Photochemistry« International Journal of Analytical and Applied Chemistry« International Journal of Green Chemistry« International Journal of Chemical and Molecular

Engineering

« International Journal of Electro Mechanics andMechanical Behaviour

« International Journal of Machine Design andManufacturing

« International Journal of Mechanical Dynamicsand Analysis

« International Journal of Fracture and damageMechanics

« International Journal of Structural Mechanicsand Finite Elements

5 more...4 more...

3 more...

Biotechnology « International Journal of Industrial Biotechnology and

Biomaterials« International Journal of Plant Biotechnology« International Journal of Molecular Biotechnology« International Journal of Biochemistry and Biomolecules« International Journal of Animal Biotechnology and

Applications3 more...

Nursing « International Journal of Immunological Nursing« International Journal of Cardiovascular Nursing« International Journal of Neurological Nursing« International Journal of Orthopedic Nursing« International Journal of Oncological Nursing

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