MATCHED ION IMPLANTATIONEnergy-Filter For Ion Implantation – EFII ©
© mi2-factory GmbH09.09.2020 2
Typical Wafer Manufacturing Procedure
SiC DeviceThis is our business!
High Energy Ion Implantation withEnergy Filter (EFII)
[Source: UC Berkeley Microlab]
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Starting Point Of Concept
Energy Filter
Ion Beam (monoenergetic)
Filtered Beam
(various energies)
Energy Filter Ion Implantation (EFII) Process: modification of ion distribution on the wafer by filter
Wafer
Depth Profile
Example:Nitrogen in SiC EFII Implanted Depth Profile (SIMS Analysis)
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Use Cases Of Our Technology
USE CASES of
EFII-TRONin SiC
Power Semiconductors
Silicon Power
IGBTLIFETIME ENG.
Fieldstopp ENG.
SiC Power DevicesSilicon Semiconductors
SiliconCOMMODITY HE-Implant:
Low Voltage PowerSensors
Power ICs / ICsDetector
etc..
Ions:Al, N, He, C, B, P
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Implanter Concepts for EFII Integration
Tandetrone.g. up to several 10 MeV available on semiconductor equipment market
LINACe.g. up to several MeV available on semiconductor equipment market
Cyclotronmi2-factory´s uniqueEFIITRON concept
+ proven implanter concept- limited throughput- huge dimensions
+ industry proven implanter concept+ high throughput- limited energy
+ high throughput+ high energy+ compact, low investment- novel concept
EFII tested
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Novel Semiconductor Equipment System
SmallCyclotron
Accelerator
Our BusinessDevelopment & Supply
of ConsumableEnergy-Filter Tools
Endstation
Our innovative concept:
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Potential Setup Of The EFIITRON Consortium
Consortium-Leadmi2-factory
Energy-Filter Factory Technical IntegratorCyclotron
Manufacturer
Provides CyclotronsTechnicallyBuildsMachine
Delivers Energy-Filters
Organizes Machine Production
Partners strongly interestedSeveral companies capable
Options in Europe:- SiC R&D Line, PPP- Implant Foundry
Pilot - FacilityEarly Adopter
Chipmaker
SiC LeadingChipmakersJoint Development?
Sells MachineOrganizes MaintenanceGuarantees Uptime
09.09.2020
Customer
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Corporate Development
Energy-filter development + Realizing customer
projects with R&D setup
7 patents granted + 11 patent applications
Quality ISO 9001 certification ✓
✓
✓
2016 -2017 2018 - 2019 2020 - 2022 2022 - 2024…
Start to apply ready-to-use EFIITRON production
machines
Machine innovation with partnersPrototype - Demonstrator
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The EFIITRON-Concept
Some Technical Details Following…
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The EFIITRON-Concept (1)
The EFIITRON concept features a novel approach to industrial high energy ion implantation for semiconductors
mi2-factory´s EFIITRON concept
combines in a unique way two technologies:
- Cyclotron ion accelerators- mi2-factory´s Energy-Filter For Ion Implantation (EFII)
High throughput, small ion implanters, with low cost of ownership –equipped with
high flexibility due to EFII technology
Bringing the cyclotrons and EFII together really means to create something fundamentally new:
© mi2-factory GmbH09.09.2020 11
The EFIITRON-Concept (2)
The EFIITRON concept features a novel approach to industrial high energy ion implantation for semiconductors
A brief view on Cyclotrons…
So called cyclotrons are well known for medical applicationsin hospitals for radiopharmaceutical production or cancer treatment.
It has been demonstrated that particularly small (footprint 2x2m) cyclotron systems can be built,which are highly accepted in the market due to their proven reliability and low cost of ownership.The number of installed machines of market leaders exceeds several hundred systems worldwide.
Why do Chipmakers not use Cyclotrons?Cyclotrons are not available for ion implantation of semiconductor wafers, because cyclotrons as such do not offer the required flexibility interms of implantation depth adjustment. For medical applications just one setting is enough.
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The EFIITRON-Concept (3)The EFIITRON concept features a novel approach to industrial high energy ion implantation for semiconductors.
The key to flexibility:Energy-Filter For Ion Implantation (EFII)mi2-factory adresses ion implantation applications in the power semiconductor field,with a strong focus on SiC (high voltage diodes, MOSFETs, Superjunction MOSFETs)but also on Si- power devices (IGBTs).Our customers would like to improve their processing results by using high-energy ion implantation.However to date, high-energy ion implantation equipment (above 10MeV ion energy) is extraordinarilyhuge, expensive and difficult to operate. Additionally the resulting dopant profiles are restricted tosimple Gaussion shape.
The Energy-Filter For Ion Implantation technologyis a passive ion-energy modulating technology which allows
• machine independent implantation depth range adjustment AND• deep custom tailored dopant profiles which are of particular interest in power semiconductor applications
Today cyclotrons are not available for ion implantation of semiconductor wafers, because cyclotrons as such do not offer the required flexibility in terms ofimplantation depth adjustment.
The EFIITRON approach targets at overcoming these restrictions by combining- mi2-factory´s Energy-Filter For Ion Implantation (EFII) technologyAND- cyclotron technology
© mi2-factory GmbH09.09.2020 13
The EFIITRON-Concept (4)
The EFIITRON concept features a novel approach to industrial high energy ion implantation for semiconductors
High throughput, small ion implanters, with low costof ownership –equipped with
high flexibility due to EFII technology
Bringing the cyclotrons and EFII together really meansto create something fundamentally new:
© mi2-factory GmbH09.09.2020 14
The EFIITRON-Concept (5)
The EFIITRON concept features a novel approach to industrial high energy ion implantation for semiconductors
The question is, how to bring this to life?
Foundation of a consortium is the key tocombine technical and market knowledge from various fields
Cyclotron
EFII-TechnologySemiconductor wafer-endstation+ Integration of components
ApplicationRequirementsfromCustomer
Thank You very much forYour attention and interest!
Moritz-von-Rohr-Straße 1a07745 JenaGermany
+49 3641 2719321
+49 3641 2719323
www.mi2-factory.com