g4beamline study of Si PIN diodeBill Ashmanskas
2008-03-06
I didn't start until I got Camille's reminder email
yesterday ...
Nevertheless, I got something useful out of the
simulation!
So g4beamline is a pretty handy tool
Mean E is 4 keV out of 660 keV. But in fact only 1% interact at all, and the ones that
do interact seem to lose most of their energy. (Note that I measured energy lost by photon,
not necessarily energy gained by silicon.) Not sure why a handful of E > 660 keV.
preview of punchline
... stop here if you're bored
just google “g4beamline”
simple ASCII description of problem to be simulated
run the program ...
check that geometry is not crazy (1000 evts shown here)
Ran 100K tracks in 2 minutes on a 6 year old
PC (1.8 GHz P4)
I chose ASCII output; you could choose ntuple, root, etc.
note that this is the output of a test run (1000 tracks), not the final run
match upstream & downstream particles; output consolidated data (e.g. E in keV)
Mean E is 4 keV out of 660 keV. But in fact only 1% interact at all, and the ones that
do interact seem to lose most of their energy. (Note that I measured energy lost by photon,
not necessarily energy gained by silicon.) Not sure why a handful of E > 660 keV.
660 keV photons from Cs137 source
S1223-01 Hamamatsu silicon PIN diode
From datasheet:
Window 5.9mm, 1.3mm thick, borosilicate glass
Effective active area 3.6mm x 3.6mm
Egap 1.12eV at 25°C
From elsewhere
316.5m intrinsic region thickness