1

Contact address in Japan (Miyazaki) : University of Miyazaki

Address : 1-1, Gakuen – Kibanadai – Nishi Miyazaki 889-2192

Web site : http://www.miyazaki-u.ac.jp/english/ Email: kokusai@cc.miyazaki-u.ac.jp

“Material Science” Research Unit---Characterization---

FACULTY OF ENGINEERING

Characterization of Semiconductor Materials and Devices

Material /device

Photothermal spectra

Photoluminescence

Photo reflectance

Raman Scattering

High-Resolution X-Ray Diffraction

Scanning Electron Microscopy

Transmission Electron Microscopy

technics

0.9 1.0 1.1 1.2 1.3 1.4

10nm

7nm

5nm

3nm

PP

T S

igna

l In

tensity (

arb

. u

nit)

Photon Energy (eV)

e1-hh1

e1-hh1

e1-lh1e3-hh3

e2-hh2

e2-hh2e1-lh1

As-grown sampleRoom Temperature

e1-hh1

e1-hh1

Photothermal spectra of GaInNAs SQW (Single quantum

well) 3 nm -- 10 nm

MQW solar cell

Nano-Disk solar cell

CIGS solar cell

ZnO

QW LED and Laser

Nano-Wire LED

Si Clathrate

The photo-reflectance (PR) technique to

determine the band-gap energy of

semiconductor. PR detects the modulated

reflectance from the semiconductor surface

induced by the laser irradiation.

Quantum Efficiency (QE) measurement

system. QE is the ratio of the number of

carriers collected by the solar cell to the

number of irradiated photons. 500 nm

100 p

eri

od

s M

QW

with G

raded B

uffe

r la

yers

10 nm

GaAsP

InGaAs

10 nm

InGaAs

GaAsP

SEM image of the 100 periods quantum wells (QWs) for the

ultra-high efficient multiple-junction solar cells

Photoluminescence spectra

of P-doped ZnO nanowires .

• Fabrication of nanowires

• Challenge to p-type doping

Fabrication and characterization of

new functional semiconductor materials

High-resolution transmission electron

microscope (HR-TEM) image of Al-

doped ZnO nanowires.

Raman Spectroscopy of Wurtzite and Zinc-

blende GaAs Nanowaires

240 260 280 300

Nor

mal

ized

Ram

an Int

ensi

ty (a.

u.)

Raman Shift [cm-1]

5 μm

GaAs-NWs

A B C A B

B

B

B A

A

・The transversal optical (TO) and

longitudinal optical (LO) mode

are related to the both Zinc-blende

and Wurtzite structures.

・E2H is the transvesal optical mode

related to the Wurtzite structure.

・Surface optical(SO) mode is attri-

-buted to the crystalline surface.

Multi-Wavelength Integrated Light Source for

Optical Sensing

Application:

(1) Multi-gas sensor array using multi-

wavelength resonant cavity gas cell device

(2) Optical coherence tomography using

wide wavelength range infrared laser array