PXT8550DISCRETE SEMICONDUCTORSR

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for general purpose amplifier applications.

Pinning1 = Base

3 = Emitter2 = Collector

Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEBO -5 VCollector Current IC -1500 mATotal Power Dissipation PD 300 mWJunction Temperature TJ +150 oCStorage Temperature TSTG -55 to +150 oC

Absolute Maximum Ratings(TA=25oC)

Rank C D E

Classification of hFE

Characteristic Symbol Min Typ Max Unit Test ConditionsCollector-Base Breakdown Volatge BVCBO -40 - - V ICollector-Emitter Breakdown Voltage BVCEO -25 - - V IC=-0.1mA,IB=0Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-100µA,IC=0Collector Cutoff Current ICBO - - -1 µA VCB=-40V,IE=0Emitter Cutoff Current IEBO - - -0.1 µA VEB=-5V,IC=0Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.5 V IC=-800mA, IB=-80mABase-Emitter Saturation Voltage(1) VBE(sat) - - -1.2 V IC=-800mA, IB=-80mADC Current Gain(1) hFE 120 - 400 - IC=-100mA, VCE=-1VTransition Frequency fT 100 - - MHz IC=-50mA, VCE=-10V, f=30MHz

Electrical Characteristics(Ratings at 25oC ambient temperature unless otherwise specified)

(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% MARKING:Y2

Range 120~200 200-350 300-400

C=-100µA, IE=0

SOT-89

Dimensions in inches and (millimeters)

.063(1.60)

.055(1.40).066(1.70).059(1.50)

.167(4.25)

.159(4.05)

.016(0.41)

.014(0.35).120(3.04).117(2.96)

.181(4.60)

.173(4.40)

.060(1.52)

.058(1.48)

.020(0.51)

.014(0.36)

.102(2.60)

.095(2.40)

1 2 3

Static Characteristics

Collector-Emitter Voltage ( V)

Col

lect

or C

urre

nt, I

C(A

)

-0 -0.4 -0.8 -1.2 -1.6 -2.00

-0.1

-0.2

-0.3

-0.4

-0.5

IB=-0.5mA

IB=-1.0mA

IB=-1.5mA

IB=-2.0mA

IB=-2.5mA

IB=-3.0mA

DC Current Gain

Collector Current, IC (mA)

DC

Cur

rent

Gai

n, h

FE

VCE=-1V

-10-1 -100 -101 -102 -103100

101

102

103

Collector Current, IC (mA)

Sat

urat

ion

Vol

tage

(m

V)

Saturation Voltage

VCE(SAT)

VBE(SAT)

IC=10*IB

-10-1 -100 -101 -102 -103-101

-102

-103

-104

PXT8550Electrical Characteristic Curves

R

DC COMPONENTS CO., LTD.

Current Gain-Bandwidth Product

Collector Current, IC (mA)

Cu

rren

t Gai

n-B

andw

idth

Pro

duc

t,f T

(MH

z)

VCE=-10V

-100 -101 -102 -103100

101

102

103