Lundstrom ECE 305 S16
ECE-305: Spring 2016
Basics of Device Fabrication
Professor Mark Lundstrom Electrical and Computer Engineering
Purdue University, West Lafayette, IN USA [email protected]
2/16/16
Pierret, Semiconductor Device Fundamentals (SDF) pp. 149-174
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2 Lundstrom ECE 305 S16
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Integrated circuit resistors
5
P-Si
Lundstrom ECE 305 S16
1) Oxidize
SiO2
2) Coat with resist
resist
Integrated circuit resistors
6
P-Si
1) Oxidize
SiO2
2) Coat with resist
resist
3) Expose light
Lundstrom ECE 305 S16
Integrated circuit resistors
7
P-Si
1) Oxidize
SiO2
2) Coat with resist
resist
3) Expose
4) Develop
Lundstrom ECE 305 S16
Integrated circuit resistors
8
P-Si
1) Oxidize
SiO2
2) Coat with resist
resist
3) Expose
4) Develop
5) Etch
Lundstrom ECE 305 S16
Integrated circuit resistors
9
P-Si
1) Oxidize
SiO2
2) Coat with resist
3) Expose
4) Develop
5) Etch 6) Strip resist
Lundstrom ECE 305 S16
Integrated circuit resistors
10
P-Si
1) Oxidize
SiO2
2) Coat with resist
3) Expose
4) Develop
5) Etch
6) Strip resist
7) Dope
P+
L
t
Lundstrom ECE 305 S16
Integrated circuit resistors
11
P-Si
1) Oxidize
SiO2
2) Coat with resist
3) Expose
4) Develop
5) Etch 6) Strip resist
7) Dope
L t
8) Anneal and Oxidize
Lundstrom ECE 305 S16
Integrated circuit resistors
12
P-Si
1) Oxidize
SiO2
2) Coat with resist
3) Expose
4) Develop
5) Etch 6) Strip resist
7) Dope
L t
8) Anneal/Oxidize
9) Open contacts
Lundstrom ECE 305 S16
Integrated circuit resistors
13
P-Si
1) Oxidize
SiO2
2) Coat with resist
3) Expose
4) Develop
5) Etch 6) Strip resist
7) Dope
t
8) Anneal/Oxidize
9) Open contacts
10) Deposit metal pattern, etch
L
Our resistor is also PN junction! Lundstrom ECE 305 S16
for more on IC manufacturing
15
ECE 612 Purdue University:
https://nanohub.org/resources/5788
https://nanohub.org/resources/5855
Lundstrom ECE 305 S16
ECE 557 Purdue University: