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National Aeronautics and Space Administration
www.nasa.gov
Wide Bandgap Reliability and Application
Guidelines
NEPP-Supported GRC Activities
Kristen Boomer, NASA GRC
Ahmad Hammoud, HX5/NASA GRC
NASA NEPP Electronic Technology Workshop, Greenbelt, MD
June 15-18, 2020
1To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
National Aeronautics and Space Administration
www.nasa.gov
Acronyms
2
Acronym Definition
AEC Automotive Electronics Council
BOK Body of Knowledge
COTS Commercial Off the Shelf
EEEElectrical, Electronic, and
Electromechanical
ETW Electronics Technology Workshop
FET Field Effect Transistor
GaN Gallium Nitride
GRC Glenn Research Center
GSFC Goddard Space Flight Center
HTGB High Temperature Gate Bias
HTRB High Temperature Reverse Bias
JPL Jet Propulsion Laboratory
JSC Johnson Space Center
LaRC Langley Research Center
LBNLLawrence Berkeley National
Laboratory
Acronym Definition
MOSFETMetal-Oxide-Semiconductor Field
Effect Transistor
MSFC Marshall Space Flight Center
NASANational Aeronautics and Space
Administration
NEPPNASA Electronic Parts and
Packaging
PWM Pulse Width Modulation
QML Qualified Manufacturer List
SEE Single Event Effect
SEP Solar Electric Propulsion
Si Silicon
SiC Silicon Carbide
TAMU Texas A&M University
TID Total Ionizing Dose
ULA United Launch Alliance
WBG Wide Bandgap
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
National Aeronautics and Space Administration
www.nasa.gov
Power switching devices are a key component in
power electronics and are subjected to many
stresses in their normal operation within systems
Examples of reliability tests
High Temperature Reverse Bias (HTRB)
High Temperature Gate Bias (HTGB)
Thermal cycling
Extreme temperature
Radiation
3To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
Why Perform Reliability Tests?
National Aeronautics and Space Administration
www.nasa.gov
SiC and GaN are the Wide Bandgap (WBG) power
devices of most interest to NASA
Benefits include:
Higher breakdown voltage
Higher operating temperature
Higher frequency operation
Increased efficiency
Better size, weight, and power numbers
NASA applications/missions include Solar Electric
Propulsion (SEP), hybrid/electric aircraft propulsion,
communications
There are still challenges to be overcome before
WBG power devices are widely adopted
4To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
WBG Applicability in NASA Missions
National Aeronautics and Space Administration
www.nasa.gov
NASA Wide Bandgap (WBG) Working Group
Collaboration on pre- and post-irradiation of GaN & SiC devices
Publication of Body-of-knowledge (BOK) on WBG power devices
Completed BOK on SiC (in collaboration with GSFC)
Generating BOK on GaN (in collaboration with JPL)
Performance and reliability assessment of supporting electronics
for WBG power devices
Evaluation of COTS and automotive-grade EEE Parts under
extreme temperatures and thermal cycling
NEPP website report publishing
5To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
NEPP-Supported GRC Activities
National Aeronautics and Space Administration
www.nasa.gov
Provide a brief guidance to GaN technology and
create a “snapshot” of the current status
Technology overview
NASA applications
Ongoing work (government, industry, academia)
Challenges and limitations
Reliability
Future direction
6To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
BOK on GaN Power Devices
National Aeronautics and Space Administration
www.nasa.gov
Collaboration with GSFC and JPL
Characterization of pre- & post-irradiated power devices
Extreme temperature exposure and wide-range thermal cycling
High temperature reverse bias (HTRB) & high temperature gate
bias (HTGB) tests of control & irradiated parts
Determination of degradation & annealing
7To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
Collaborative Performance Assessment
of WBG Power Devices
National Aeronautics and Space Administration
www.nasa.gov 8
Two environmental chambers (0.37 ft3; 2.2 ft3)
Extreme temperature exposure, thermal cycling, and life-testing
Programmable temperature rate, dwell time, and number of cycles
Temperature range: -194 ºC to +315 ºC; rate: 0.1 ºC/min to 36 ºC/min
Built-in feed-throughs for multi-stress (electrical/thermal) testing
Material, device, and circuit characterization
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
GRC Extreme Temperature Electronics Lab
National Aeronautics and Space Administration
www.nasa.gov 9
EPC 2012
GaN GS61008P
GaN GS66508P
GaN GS61008P(Un-capped/irradiated)
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
Device-Mounted Boards
National Aeronautics and Space Administration
www.nasa.gov 10
Manufacturer Part # Parameters# Samples
(control/Irradiated)Radiation Cycling
EPC 2012 200V, 3A, 100mΩ 15/26
GaN SystemsGS61008P 100V, 90A, 7.4mΩ 11/10
GS66508P 650V, 30A, 52mΩ 4/0 Planned
Radiation Exposure
Device Ion Energy (MeV) LET (MeV.cm2/mg) Range (μm) Incidence Angle Facility
EPC Xe 3197 41 286 Normal TAMU*
GaN Systems
Ag 2651 42 - 48 90 Normal TAMU*/LBNL*
Au 2594 87 118 Normal TAMU*/LBNL*
10 ºC/min
10 min
10 min
+125 ºC
-55 ºC
Thermal Cycling:
1000 cycles
Rate: 10 ºC/min
Range: -55 ºC to +125 ºC
Soak time: 10 min
* TAMU: Texas A&M University; LBNL: Lawrence Berkley National Lab
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
Radiation and Thermal Cycling on GaN Parts
National Aeronautics and Space Administration
www.nasa.gov 11
Heavy ion response of EPC2012 device k8765 at normal incidence. (Leakage current recovers after irradiation)
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
EPC 2012 Enhancement Mode Power FET
Courtesy: NASA JPL, L. Scheick
National Aeronautics and Space Administration
www.nasa.gov 12
Pre-cycling
Control part
Pre-cycling
Irradiated part
Post-cycling
Irradiated part
EPC2012
Pre
cycling
Post 500
cycles
Post 750
cycles
Post 1000
cycles
Cont Irrad Cont Irrad Cont Irrad Cont Irrad
VTH (V) 1.14 0.82 1.12 0.93 1.12 0.94 1.12 0.95
IGLF (µA) 1.19 1.48 1.08 1.54 1.05 1.44 1.03 1.40
IGLR (nA) 109.25 153.58 100.05 134.56 97.66 139.13 95.22 128.61
IDL (µA) 0.32 147.35 0.33 142.73 0.32 151.60 0.30 147.64
VDS (V)VDS (V)
0.0 0.4 0.8 1.2 1.6 2.0
I D (
A)
I D (
A)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0VGS = 2.0V
1.2V
1.4V
1.6V
VDS (V)VDS (V)
0.0 0.4 0.8 1.2 1.6 2.0
I D (
A)
I D (
A)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0VGS = 2.0V
1.2V
1.4V
1.6V
VDS (V)VDS (V)
0.0 0.4 0.8 1.2 1.6 2.0
I D (
A)
I D (
A)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VGS = 2.0V
1.8V
1.2V
1.4V
1.6V
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
EPC 2012 Enhancement Mode Power FET
National Aeronautics and Space Administration
www.nasa.gov 13
Heavy ion response of GS61008 device a3260 at normal incidence. (Destructive SEE observed at VDS of 100 V)
0 400 800 1200 1600
Elapsed time [AU]
10-8
10-7
10-6
10-5
10-4
10-3
10-2
Cu
rren
t [A
]
0
40
80
120
Vo
ltag
e [
V]
a3260 GS61008 Au@87 MeV.cm2/mg range=118u
Gate current [A]
Drain current [A]
Drain voltage [V]
Gate Voltage [V]
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
GaN Systems GS61008P Power FET
Courtesy: NASA JPL, L. Scheick
National Aeronautics and Space Administration
www.nasa.gov 14
GS61008P
Pre
cycling
Post 500
cycles
Post 750
cycles
Post 1000
cycles
Cont Irrad Cont Irrad Cont Irrad Cont Irrad
VTH (V) 0.90 0.98 0.87 0.98 0.90 0.99 0.90 0.99
IGLF (µA) 35.23 73.05 35.45 82.27 35.15 81.09 35.20 80.53
IGLR (nA) 1.21 1.26 1.11 1.25 1.07 1.24 1.06 1.22
IDL (µA) 4.94 131.50 3.94 129.58 3.99 125.58 3.97 122.80
Pre-cycling
Control part
Pre-cycling
Irradiated part
Post-cycling
Irradiated part
0.0 0.5 1.0 1.5 2.0 2.5 3.00.0
0.2
0.4
0.6
0.8
1.0
1.2
VDS (V)VDS (V)
I D (
A)
I D (
A)
1.6V
1.8V
1.7V
1.5V
VGS = 2.0V
1.9V
0.0 0.5 1.0 1.5 2.0 2.5 3.00.0
0.2
0.4
0.6
0.8
1.0
1.2
VDS (V)VDS (V)
I D (
A)
I D (
A)
VGS = 2.0V
1.9V1.8V
1.7V
1.6V
1.5V
0.0 0.5 1.0 1.5 2.0 2.5 3.00.0
0.2
0.4
0.6
0.8
1.0
1.2
VDS (V)VDS (V)
I D (
A)
I D (
A)
VGS = 2.0V
1.9V
1.8V
1.7V
1.6V
1.5V
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
GaN Systems GS61008P Power FET
National Aeronautics and Space Administration
www.nasa.gov
Parameter Value
Drain-Source Voltage, VDS (V) 900
Gate Threshold Voltage, VTH (V) 2.1 @ VDS = 10V, ID = 5mA
Drain Current, ID (A) 36
Drain-Source On-Resistance,
RDS(ON) (mΩ)
65 @ VGS = 15V, ID = 20A
Zero Gate Voltage Drain Current,
IDSS (µA)
1 @ VDS = 900V, VGS = 0V
Gate-Source Leakage Current, IGSS(nA)
10 @ VGS = 15V, VDS = 0V
Operating Temperature, T (°C) -55 to +150
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
HTRB Test of Cree 900V SiC N-Channel
Power MOSFETs
National Aeronautics and Space Administration
www.nasa.gov
Samples: 3 pristine, 6 irradiated
Duration: 1000 hours
Temperature: 150 °C
Bias: 80 % rated BVDSS, VGS = 0 V
Procedure per MIL-STD-750 Method 1042.3 & NASA
Guideline EEE-INST-002
Parameters:
Gate threshold voltage
Drain leakage current
Gate leakage current
Drain-source breakdown voltage
Measurements at 23 °C & at +150 °C at intervals
16To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
HTRB Test
National Aeronautics and Space Administration
www.nasa.gov 17To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
Test Board
National Aeronautics and Space Administration
www.nasa.gov 18
VDS (V)VDS (V)
0 400 800 1200 1600
I D (
µA
) w
ith
VG
S =
0V
I D (
µA
) w
ith
VG
S =
0V
0
20
40
60
80
100
120
IRRADIATED
PRISTINE
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
Breakdown of Pristine & Irradiated SiC
Devices (Pre-HTRB)
National Aeronautics and Space Administration
www.nasa.gov
In addition to WBG devices themselves, supporting
electronics need to be identified/developed for use in
designs
Considerations for supporting electronics in WBG
designs:
Responsive to faster switching speeds
Extended operating temperature range
Layout to minimize parasitics
GRC has selected various supporting electronics
such as gate drivers and pulse width modulation
(PWM) controllers to test operation over extended
temperature range
19To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
WBG Supporting Electronics Considerations
National Aeronautics and Space Administration
www.nasa.gov
Perform tests varying the following conditions:
Supply voltage
Switching frequency
Temperature
Examples of parameters measured:
Rise and fall times
Turn-on and turn-off propagation delays
Current
20To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
Test Conditions
National Aeronautics and Space Administration
www.nasa.gov
Evaluation of TI UC1846-SP rad-tolerant PWM controller
QML-V part, TID 40krad (Si) tolerant, current-mode controller
Rated for -55 ºC to +125 ºC
Test temperature range -192 ºC to +140 ºC, cold-restart, thermal cycling
21To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
Performance & Reliability Assessment of
Supporting Electronics for WBG Power Devices
National Aeronautics and Space Administration
www.nasa.gov
Pre-cycling waveforms of reference (yellow), oscillator (green), and output (red and blue) signals at
+140 ºC, +23 ºC, & -120 ºC (L to R)
Post-cycling waveforms of reference (yellow), oscillator (green), and output (red and blue) signals at
+140 ºC, +23 ºC, & -120 ºC (L to R)
22To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
Evaluation of TI 1846-sp Rad-Tolerant
PWM Controller
National Aeronautics and Space Administration
www.nasa.gov
Performance & Reliability Assessment of Supporting
Electronics for WBG Power Devices
Evaluation of Isolated Gate Driver, ADuM4121
Pre- & post-cycling propagation delays, switching times, & supply current at 10 kHz frequency
Supply current versus temperature at various
frequencies of ADuM4121 gate driver
Turn-on
Propagation
Delay, tDLH(ns)
Turn-off
Propagation
Delay, tDHL(ns)
Rise Time,
tr (ns)
Fall Time
tf (ns)
Supply
Current (mA)
T (°C) Pre Post Pre Post Pre Post Pre Post Pre Post
+20 29.00 28.00 37.00 36.00 14.00 14.50 14.50 14.00 2.27 2.30
-190 25.00 25.00 30.00 30.00 15.50 17.50 13.50 15.50 1.45 1.50
+140 34.00 33.00 43.00 43.00 15.50 15.50 15.50 16.00 2.67 2.66
ADuM4121 driver chip mounted on test board
Rise (blue) & fall (red) times of ADuM4121
as a function of temperature
ADuM4121 turn-on (blue) & turn-off (red)
propagation delays versus temperature
Temperature (°C)
-200 -150 -100 -50 0 50 100 150 200
Pro
pagati
on
Del
ay, t
DL
H (
ns)
10
15
20
25
30
35
40
45
50
Pro
pagati
on
Del
ay, t
DH
L (
ns)
10
15
20
25
30
35
40
45
50
Temperature (°C)
-200 -150 -100 -50 0 50 100 150 200
Ris
e T
ime
(ns)
0
5
10
15
20
25
30
Fall
Tim
e (n
s)
0
5
10
15
20
25
30
Temperature (°C)
-200 -150 -100 -50 0 50 100 150 200
Su
pp
ly C
urr
ent
ID
D1 (
mA
)
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
1000 kHz500 kHz
10 kHz
50 kHz
100 kHz
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
National Aeronautics and Space Administration
www.nasa.gov
AEC-Q101 Qualified, 1N4448 WSF Diodes, Inc. 0.5A diode
Rated temperature -65 ºC to +150 ºC
Test temperature range -192 ºC to +150 ºC, thermal cycling
Six pristine & six life-tested (at Navy Crane) samples
24
Forward Voltage, VF (V)Forward Voltage, VF (V)
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fo
rward
Cu
rren
t, I
F (
A)
Fo
rward
Cu
rren
t, I
F (
A)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
@-1
92 ºC
@-1
00 º
C
@-75 ºC
@ 25 ºC
@+50 ºC
@-1
50 º
C
@-50 ºC
@+100 ºC
@+1
50 ºC
FORWARD CHARACTERISTICS
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
Evaluation of COTS & Automotive-Grade EEE Parts
Under Extreme Temperatures and Thermal Cycling
National Aeronautics and Space Administration
www.nasa.gov 25
Voltage (V)Voltage (V)
050100150200
Cu
rren
t (A
)C
urr
en
t (A
)
0.000000
0.000005
0.000010
0.000015
0.000020
0.000025
@+150
ºC
@+100 ºC
@ 25 ºC
@+50 ºC
@-50 ºC @-150 ºC
@-100 ºC
@-75 ºC
@-1
92 º
C
DIODE REVERSE CHARACTERISTICS
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
Evaluation of COTS & Automotive-Grade EEE Parts
Under Extreme Temperatures and Thermal Cycling
National Aeronautics and Space Administration
www.nasa.gov 26
GaN power transistors (GSFC/JPL) Flip-chip and ball-grid array (JPL)
Automotive-grade diodes (MSFC/Navy)Shuttle GPS preamplifier (JSC/Boeing/ULA)
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
GRC Extreme Temperature Electronics Lab
Collaborations
National Aeronautics and Space Administration
www.nasa.gov 27
GaN-based motor controller (GRC)
Space-qualified capacitors (External customer) Flexible printed circuit board (LaRC)
JWST cryogenic stepper motor controller (GSFC)
To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020
GRC Extreme Temperature Electronics Lab
Collaborations
National Aeronautics and Space Administration
www.nasa.gov
ACKNOWLEDGMENT
This collaborative work was performed in support of the
NASA Electronic Parts and Packaging (NEPP) Program.
Part of this work was done at the NASA Glenn Research
Center under GEARS Contract # 80GRC020D003.
28To be presented by Kristen T. Boomer at the 2020 NEPP Electronics Technology Workshop (ETW), NASA GSFC, Greenbelt, MD, June 15-18, 2020