What's New with CMOS Imaging Arrays

What’s New with CMOS(Complimentary Metal Oxide Semiconductor)

Imaging Arrays

Steve MurrayMarch 22, 2011

Outline of Talk

• CMOS Imaging Arrays for Infrared, Visible and SoI X-‐ray (0.1-‐10 keV)•Hybrid and Monolithic Devices–Hawaii Family (Teledyne Imaging Sensors, Jim BeleSc et al.)»HgCdTe and Si-‐PIN (HyViSi)

–Minimal Family (Sarnoff, Jim Janesick et al.)»Si -‐ Big Min, Big Min II

Astronomical SeVng

3

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Optical and Infrared Astronomy(0.3 to 25 m)

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Telescope %-('-$$#'%()*+(1-'>.($&4?% Instrument %-(3#).>5#($&4?%

2*.%5>3#*%

•OpScs (another talk)• Normal/Grazing Incidence

• On/Off Axis• RefracSve/ReflecSve• ...

•Instrument (this talk)• Camera -‐ Imaging • Spectrometer• Imaging Spectrometer• Photometer• Polarimeter• ...

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Instrument goal is to measure a 3-D data cube

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• But most detectors are 2-‐dimensional• Measure intensity, not energy• ExcepSons: X-‐ray, OpScal ( Foveon X3), 3-‐rd Gen IR ...

• OpScs used to map a porSon of the 3-‐D cube onto the 2-‐D device

Data Cube Desired

“Ideal” Imaging Detector

• Detect >98% of photons (QE)–Signal proporSonal to photon energy

• Large number of pixels (mega to giga pixel arrays)• Time tag each photon (<msec goal)• Measure photon energy/wavelength (R ~100?)• Measure photon polarizaLon • (Plus low readout noise and various operaLonal modes to enable the above)

Six Steps to an Astronomical Camera

1. Get Light into Detector

2. Generate Charge

6. Signal DigiSzaSon

AnS-‐reflecSon coaSngSubstrate removal

Detector MaterialsSi, HgCdTe, InSb, Si:As

Electric Fields in detectorcollect electrical charge

} QuantumEfficiency

Point Spread FuncSon

SensiSvity4. Charge-‐to-‐

Voltage Conversion

5. Signal Transfer

Source followerCTIA, DI

Random access or

full frame read

3. Collect the Charge

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5. Charge-‐to-‐Voltage Conversion

Charge coupledtransfer

MOSFETAmplifier

4. Charge Transfer

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CMOS / CCD

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CCD / CMOS Comparison

CCD Approach CMOS Approach

PixelCharge generation &

charge integrationCharge generation, charge integration &

charge-to-voltage conversion

+

PhotodiodePhotodiode Amplifier

Array ReadoutCharge transfer

from pixel to pixel

Multiplexing of pixel voltages: Successively

connect amplifiers to common bus

Sensor OutputOutput amplifier performs

charge-to-voltage conversion

Various options possible:< no further circuitry (analog out)< add. amplifiers (analog output)< A/D conversion (digital output)

CMOS = Complimentary Metal Oxide Semiconductor

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Comparison CMOS vs. CCD for Astronomy

Windowing, Guide Mode,Random Access, Reference Pixels,Large dynamic range (up the ramp)

Orthogonal TransferBinningSpecial Modes

Electronic, rolling shutter, snapshotMechanicalShutterTyp. 10x lower than CCDHighPower Consumption

Much less susceptible to radiationSensitiveRadiation

Few electrons with multiple samplingFew electronsNoise

up to 4K x 4K> 4K x 4KResolution10 – 40 µm (up to 100 µm if required)10 – 20 µmPixel pitch

400 – 1050 nm with Si PIN400 – 18,000 nm with HgCdTe400 – 5,000 nm with InSb

400 – 1050 nmTypical wavelength coverage

Low voltage onlyCan be integrated into single chip

High voltage clocks,at least 2 chips neededControl Electronics

Hybrid CMOSCCDProperty

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* Backside illuminated monolithic CMOS E3+-3%-.=5+/8:%938%58:9%.B%!"#$%;/7%!!?%B8;9>68:%E+,,%=;F8%=;G.6%:96+78:%58B.68%938%/8H9%7898-9.6%E.6F:3.@D

Astronomical PerspecSve

• Si PIN hybrid detectors are serious alternaSve to CCD

• HgCdTe hybrids are “standard” IR detctors

• Backside monolithic CMOS is rapidly advancing with very low read noise

T = 1−�n2 − n1

n2 + n1

�2

No AnS-‐ReflecSon CoaSng

Incident Transmiied

Reflectedn1 n2

For 0o incidence, the fracSon of incident energy transmiied is give by:

No AnS-‐reflecSon coaSng

Loss at SurfaceLoss at SurfaceLoss at Surface

Air n1=1.00

Glass n2=1.5

R=4%T=96%

Air n1=1.00

Sin2~4

R=36%T=64%

Air n1=1.00

HgCdTent=3.7

R=33%T=67%

•Si and HgCdTe detectors will reduce the effec9ve diameter of an 8m telescope to ~6.5m due to losses at an untreated surface.

•For low energy X-‐rays (<500eV), need backside illumina9on with thin dead layer is needed.

Get the light into the detectorAnS-‐ReflecSon CoaSng

T = 1−�n1n2 − n2

layer

n1n2 + n2layer

�2

Incident

Reflectedn1

Transmiiedn2

nlayer For 0o incidence, the fracSon of incident energy transmiied is give by:

OpSmized 1/4 λ-‐wave AR coaSng

1/4 λ

29

Example Anti-reflection coatings for HgCdTe

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600Wavelength (nm)

Tran

smis

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(%)

Single Layer (WFC3)

Double Layer

Three Layer (NIRCAM SWIR)

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the

HgC

dTe

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)

Substrate removed CdZnTe detectors using thin film AR coaLngs (HfO2/SiO2) achieve >80% efficiency over broad bands and >90% at narrower bands

Teledyne Imaging Systems

For X-‐rays, Al on polyimide (0.5μ) filters block opLcal and UV at the cost of low energy (<1 kev) transmission

Photon DetecSonVisible and IR

• Electrons are excited form the conducSon band to the valence band (hν > Egap)

Material Egap (eV) λc (μm)

Si 1.12 1.1

InGaAs 0.73 -‐ 0.48 1.68 -‐ 2.6

HgCdTe 1.00 -‐ 0.07 1.24 -‐ 18

InSb 0.23 5.5

Si:As 0.05 25

X-‐ray

• Si PIN Diode is a photodiode• On average X-‐ray loses ~3.6 eV to make one electron-‐hole pair in the Si. E.g., Fe55 X-‐ray at 5.9 keV will yield 1620 electrons (Kα)

• Electrons collected at the pixels• Low energy cutoff -‐ dead layer and blocking filter

• High energy cutoff -‐ thickness of depleted layer in Si

Si AbsorpSon Depth• For high QE in the NIR, need very thick Si (300 μm)• Makes for a good cosmic ray detector

• For high QE in UV need to capture the photo-‐charge very close to the entrance (10 nm posiSve field needed)• Boron implant/anneal -‐ e2v, MIT/LL• Molecular Beam Epitaxy -‐ JPL, MIT/LL• ChemisorpSon coaSng -‐ UofA

• Index if refracSon of Si varies over λ, a challenge for AR coaSngs

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Hybrid Silicon PIN Quantum Efficiencyachieves as high QE as CCDs in the NIR

0

10

20

30

40

50

60

70

80

90

100

300 400 500 600 700 800 900 1000 1100 1200wavelength,nm

QE,

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Hybrid Silicon PIN Quantum Efficiencyachieves as high QE as CCDs in the NIR

0

10

20

30

40

50

60

70

80

90

100

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Hybrid Si PIN (HyViSI) CMOS H2RG

Predicted Measured

• 800 nm 11μm• 900 nm 29μm• 1000 nm 94μm

Teledyne

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Optical Absorption Depth in Silicon:+;<;+;**=>?%*$%+@'(3@&*A&/'BC

Thick Si IR Detector is also CR Detector

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A very thick silicon detector is alsoa very good sensor of cosmic rays

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Near-IR Imaging enabled by very thick silicon sensors

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Near-IR Imaging enabled by very thick silicon sensors

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HgCdTe AbsorpSon Depth

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Absorption Depth of HgCdTe :;$#(-1(<=;3>

<=&'?*#..(-1(@4A+<#($)B#5*##+.(%-(>#()>-;%(#C;)$%-(%=#(';%-11(D)E#$#*4%=HgCdTe AbsorpSon • Growing the HgCdTe -‐

• Seed layer of CdZnTe • MBE allows fine control of chemistry (tunes the bandgap)

• Substrate removal recovers the short wavelength response

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Two methods for growing HgCdTe1. Liquid Phase Epitaxy (LPE)2. Molecular Beam Epitaxy (MBE)

– Enables very accurate deposition “bandgap engineering”– Teledyne has 4 MBE machines for detector growth

RIBER 10-in MBE 49 SystemRIBER 10-in MBE 49 System

RIBER 3-in MBE SystemsRIBER 3-in MBE Systems

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Rule of Thumb: Thickness of HgCdTe layer should be about equal to the cutoff wavelength

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1.7 μm cutoff

R. Smith (CalTech) SPIE 5-‐25-‐2006

Reduced CR sensiSvity for substrate removed HgCdTe (from IR light from CdZnTe)

For IR Customize HgCdTe

22

Tunable Wavelength: Unique property of HgCdTeTunable Wavelength: Unique property of HgCdTe

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G. L. Hansen, J. L. Schmidt, T. N. Casselman, J. Appl. Phys. 53(10), 1982, p. 7099

22

Tunable Wavelength: Unique property of HgCdTeTunable Wavelength: Unique property of HgCdTe

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G. L. Hansen, J. L. Schmidt, T. N. Casselman, J. Appl. Phys. 53(10), 1982, p. 7099

•Modify the raSo of Hg and Cd to “tune” the bandgap energy

•Eg = -‐0.302 + 1.93x -‐0.81x2 + 5.35x10-‐4(1-‐2x)• Hansen, Schmidt, and Casselman Appl. Phys 1982

•“Price of admission” -‐ Dark Current

Charge CollecSon

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• Image arrays are 2D arrays of 3D pixels

• Intensity image is generated by collecSng photo-‐charge generated in the 3D pixel, typically p-‐n juncSon “sweeps” charge tp collecSon node

• CCD -‐ collect charge and move it to an edge or corner of to amplifiers for read out

• CMOS -‐ collect charge at pixel where there is an amplifier and readout mulSplexer

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Photovoltaic Detector Potential Well

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CMOS Hybrid (Visible and IR) Detectors

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Sensor Chip Assembly

CdZnTe substrate MCT epilayer

MBEgrowth

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Indium bump,Dice Detector arrays

Processed wafer

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ROIC DieReceive wafers from foundry

CMOSmixed signaldesign

Fabrication at foundry

Focal Plane Array

Packaging

Detector FabricationDetector Fabrication

Multiplexer Design and FabricationMultiplexer Design and Fabrication

HgCdTe IR FPA Manufacturing Process

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HyViSI (Hybrid Visible light Silicon PIN)

Substrate Removal

16

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Substrate Removal of HgCdTeThe new standard in astronomy

Substrate Removal Process

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QE Improvement With Substrate Removal

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GSFC Detector CharacterizaSon Lab

Hybrid Detector Zoo

17

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Read Out Integrated Circuit:H1RG 1k x 1k x 18 μmH2RG 2k x 2k x 18 μmH4RG 4k x4k x 10 and 15 μm...

Detector Materials

SIDECAR ASICSystem for Image DigiSzaSon,

Enhancement, Control And Retrieval

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Teledyne Imaging Sensors HAWAII-4RG™

Visible & Infrared Focal Plane Array

The 4096!4096 pixel HAWAII-4RG™ (H4RG) is the next generation, state-of-the-art readout integrated circuit for visible and infrared instrumentation in ground-based and space telescope applications.

• Large (4096!4096 pixel) array with either 10 µm or 15 µm pixel pitch.

• Compatible with Teledyne Imaging Sensors (TIS) HgCdTe infrared (IR) and silicon PIN HyViSI™ visible detectors, providing sensing of any spectral band from soft X-ray to 5.5 "m.

• Substrate-removed HgCdTe enhances the J-band QE, enables response through the visible spectrum (70% QE down to 400nm), and eliminates fluorescence from cosmic radiation absorbed in the substrate, and eliminates fringing in the substrate material.

• Reference rows and columns for common-mode noise rejection.

• Guide window output – windowing with simultaneous science date acquisition of full array. Programmable window which may be read out at up to 5 MHz pixel rate for guiding. Readout is designed to allow interleaved readout of the guide window and the full frame science data.

• Selectable number of outputs (1, 4, 16, 32 or 64) and user-selectable scan directions provide flexibility in data acquisition.

• Built with modularity in mind – the array is 4-side-buttable to allow assembly of large mosaics of 4096!4096 H4RG modules.

• Fully compatible with the TIS SIDECAR™ ASIC Focal Plane Electronics.

For more information, please email Richard Blank at [email protected] or call +1 805 373-4083.

Published Information – Cleared for Public Release by the DoD’s Office of Security Review (Case #10-S-1233)

Teledyne Imaging Sensors HAWAII-4RG™

Visible & Infrared Focal Plane Array

The 4096!4096 pixel HAWAII-4RG™ (H4RG) is the next generation, state-of-the-art readout integrated circuit for visible and infrared instrumentation in ground-based and space telescope applications.

• Large (4096!4096 pixel) array with either 10 µm or 15 µm pixel pitch.

• Compatible with Teledyne Imaging Sensors (TIS) HgCdTe infrared (IR) and silicon PIN HyViSI™ visible detectors, providing sensing of any spectral band from soft X-ray to 5.5 "m.

• Substrate-removed HgCdTe enhances the J-band QE, enables response through the visible spectrum (70% QE down to 400nm), and eliminates fluorescence from cosmic radiation absorbed in the substrate, and eliminates fringing in the substrate material.

• Reference rows and columns for common-mode noise rejection.

• Guide window output – windowing with simultaneous science date acquisition of full array. Programmable window which may be read out at up to 5 MHz pixel rate for guiding. Readout is designed to allow interleaved readout of the guide window and the full frame science data.

• Selectable number of outputs (1, 4, 16, 32 or 64) and user-selectable scan directions provide flexibility in data acquisition.

• Built with modularity in mind – the array is 4-side-buttable to allow assembly of large mosaics of 4096!4096 H4RG modules.

• Fully compatible with the TIS SIDECAR™ ASIC Focal Plane Electronics.

For more information, please email Richard Blank at [email protected] or call +1 805 373-4083.

Published Information – Cleared for Public Release by the DoD’s Office of Security Review (Case #10-S-1233)

In general Hawaii family read noise is in the 15 e-‐ range

SIDECAR ASIC

18

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Digital ControlMicrocontroller for Clock Generation

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Program Memory

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• Designed to pair with Hawaii Family, can also interface with CCDs and Monolithic CMOS

• Extremely versaSle, but very complex• Must run cold for low noise, limit is ~5-‐10 e-‐

Non-‐DestrucSve Readout

19

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• Fowler Sampling drives down read noise• sample the reset N Smes and then sample the signal N Smes (pairs)

• Example is a H2RG HgCdTe array with a 2.5 μm cutoff, operated at 77K

• Requires added Sme• Sme to read a H2RG frame is ~1/2 s• need off chip frame storage

Here there be X-‐rays

20

H2RG Si-‐PIN (HyViSI) 1k x 1k x 36 μm pixelsTi X-‐ray sourceRead Noise 17 e-‐ rms 100 kpix/sec @ 140K

Kα 4.51 keV

Kβ 4.93 keV

FourStar Detector ModuleFourStar Back End

Detector module with ASIC cold cards 14Jump to:

FourStar Photo Album

FourStar Detector Module

FourStar Detector ModuleFourStar Back End

3 of the SCA's in the camera module1Jump to:

FourStar Photo Album

FourStar Detector Module

Four Star Camera (Magellan Baade)

21

Four Star focal plane (uses HJK filters)

1.1. Instrument Overview

FourStar provides a 10.9 arcminute square field of view using a 2x2 array of Teledyne HAWAII-2RG focal plane arraysthat provide a plate scale of 0.159 arcsec per pixel. This scale slightly under-samples images under the best seeingconditions at Magellan, which have been measured with the PANIC camera on the Magellan Baade telescope (Martini etal. 2004), to be at best 0.21 arcsec FWHM at Ks in ten minutes and a median of 0.41 arcsec FWHM.

Property Value Notes

Focal Plane Format 4096 x 4096 Four HAWAII-2RG arrays

Pixel Scale 0.159!! 18µm pixels

Field of View 10.9! x 10.9!Sensitivity Ks = 20.6 (Vega) 5" point source in 1hr

Table 1. Key FourStar parameters.

FourStar will be outfitted with a standard suite of JHKs filters. The instrument has two 6-position filter wheels in series,and may accommodate up to 10 filters. The remaining filters will be designed for particular science projects, and willhave narrow (#/$#~100) or medium (#/$#~10) bandwidths.

The instrument will reside at one of the two f/11 Nasmyth ports of the Baade 6.5m telescope. It is about 3 m long andweighs 1200 kg. Most of its weight will be supported by the instrument handling cart which sits on the Nasmythplatform; attachment to the telescope via the guider is used only to locate the instrument in space.

1.2. Science with FourStar

FourStar will be primarily a survey instrument. Its combination of sensitivity, image quality and field of view are ideallysuited to addressing key problems in the study of distant galaxies, star formation, and stellar astrophysics.

Figure 2. An example of the image quality and sensitivity offered by the Magellan Telescopes. This 17 hour Ks-band image of the Hubble Ultra-Deep Field with PANIC (Martini et al. 2004) reaches a limiting depth of Ks = 24mag (Vega). The resolution of the images rivals that of NICMOS on HST. The 25 times larger field of view ofFourStar will make deep surveys over moderate areas practical and will enable studies of massive red galaxies inthe 1 < z < 3 range with high precision and statistical accuracy. The image is from Labbé (2007).

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Four Star Focal Plane

SIDECAR

Visible Light Photometry

22

“Whipple” -‐ HyViSI High Speed Photometer

Time (sec)

H2RG+HiViSI @ 20 Hz (400kpix/sec)Read noise 17 e-‐ rms @ 200K

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Other Examples

23

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Another 4096 x 4096 pixel IR mosaic comes on-line:;%<)"88=))> ?'6/&)%'5@&).2)ABCD>3))EA'5@)B(;'&<F)C',$)2'$%,)D>G*+,)34*5'+5HI;6.J$*+)1.;&@$6+)7G/$6K*&.6<)L89MNL89M)J'N$%)4./*'().2)A"OP/M&@).J$6*&'.+*%)LDQLD)4./*'().2)A")R)A"OP/S))I17F)P$4'+'F)T?AUF)VAF)VD3OUF)17BOUW.)4.6$)LDQLD)4./*'(/)&.)G$)(.44'//'.+$,)'+)"8!8S)7T3CF)XY3B

Serpens Star Forming Region1 million year old stars

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VISTA Telescope (ESO)

HgCdTe 2K x 2K,20 µm pixels

Mockup of image on sky with Moon

4!4 Mosaic67 Megapixels

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Very Liile Energy in IR

24

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63 million pixels

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; Wide field imager; Studies morphology of objects

and structure of the universe; U. Arizona / Lockheed Martin

; Spectrograph; Measures chemical composition,

temperature and velocity; European Space Agency / NASA

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stabilization; Canadian Space Agency

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25!"#$%$&'()*+,)-../$)0 1('$+&'2'()34*5'+5)1$+/.6/)0 7(&)899:

Monolithic CMOSJim Janesick

J. Pinter, R. Poier, T. Elliot, J. Andrews, J. Tower, M. Grygon, D. Keller, A. Kenter, R. KraI, T. Gauron, P.Doherty

26

• Minimal Arrays• General ScienSfic CMOS Performance• Buried Channel Sub-‐electron Pixels• Metal-‐Insulator-‐Metal (MIM) CMOS Pixel• 1024 x 1024 x 16 um 5TPPD CMOS Imager• Mk x Nk x 10 um 5TPPD CMOS Imagers• High Energy RadiaSon Damage Data

Proc. SPIE 7742-‐11, San Diego 2010

Minimal Arrays

27

•Not a camera on a chip• Sensor is “stripped” of many convenSonal CMOS on-‐chip features leaving• Pixels -‐ 3T, 4T, 5T and 6T• Row and column address decoders and switches

• Pixel drivers -‐ reset, transfer gate, photo gate, global reset, and row select

• Clamping analog circuitry for pixel tesSng• External pixel clocks allow various readout modes -‐ snap, progressive scan, windowed

• External clock amplitudes• External current control for source followers

• External VDD power supplies and ground

Key to Low Noise

28

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• Source follower flicker (1/f) noise ulSmately limits CCD noise floor to a few electrons

• CMOS read noise is limited by “random telegraph signal (RTS) noise”

• Flicker and RTS both originate through the capture and emission of carriers in traps located at or near the Si-‐SiO2 gate interface of the source follower amplifier

• RTS involves a single trap, flicker is the superposiSon of many RTS sources

• The size of the source follower is what determines the noise limit

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• Examples of RTS -‐ output of a 3T pixel as a funcSon of Sme• A single trap changes the drain current by as much as 0.1%

• Two traps give rise to three current states

SIngle trap Two traps

Janesick, Andrews and Elliot SPIE 6276 (2006)

Reducing RTS

29

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Example of the effect of cooling on RTS, traps remain filled and do not contribute to the noise. Many factors govern RTS e.g., the design of the MOSFET, the drain bias current, the use of correlated double sampling (and the Sme constant).

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• Key to low noise is high conversion gain at the pixel• Requires low sense node capacitance (natural in 5TPPD and 6TPG with small sense node). 3TPPD design achieves low sense node capacitance even though the pixel area is large

• Conversion gain up to ~70 μV/e-‐ is achieved• DetecSon efficiency requires thick depleted absorber• For NIR need >10 μm Si• For X-‐ray (6 keV) need even more!• Requires very high resisSvity Si e.g., epitaxial >10,000 Ω-‐cm

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• AcSve isolaSon 3TPPD pixel design• Isolate the diode from the p+ well that defines the pixel, lowers capacitance

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• Careful implant design and doping levels are required to achieve desired performance

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31

• Global reset and full frame read out, digiSzed and stored• Signal integraSon• Full frame read out and digiSzed and stored• Reset frame subtracted from the signal frame• dCDS effecSve in removing offset, pixel-‐to-‐pixel offset fixed paiern noise, and reset noise

• Raw video has ~250 e-‐ noise, dCDS signal has ~2.5 e-‐ noise• Raw video noise 250 e-‐ is mainly offset FPN• Reset noise is ~28 e-‐, and source follower is ~2.5 e-‐

• Caveats for dCDS• Need DC coupling and offset must be well controlled• Low frequency noise is not rejected (e.g. 60 Hz)

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Playing the CMOS GameThe Sandbox-‐ Jim Jamesick “Ringmaster”

32

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Ideal DeviceShot Noise ∝ √Signal

Ideal Real DeviceFixed Paiern Noise (FPN)

at large signals

Remove FPNE.g., IdenScal frame subtracSon

• Need to take out the ADC offset carefully to have the real signal

• Shot noise intercept (noise=1) gives ADC conversion gain (e-‐/DN)

J.R. Janesick -‐ Photon Transfer DN-‐>λ

5 Transistor Pinned Photo Diode Pixel

35

!

!

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5TPPD pixel has one charge transfer from the PPD to the Sense NodeVery low capacitance of Sense Node gives high conversion (up to ~70 μV/e-‐)Enables very low read noise

!

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Photon Transfer Curve (PTC) for Big Min I30,000 e-‐ full well2.5 e-‐ read noise (single read) @ ~100 kpsFrame rate ~0.68 fps

X-‐ray SensiSvity

36

Fe-‐55 -‐> Mn 55 -‐>K-‐α 5895 eV (1620 e-‐)K-‐β 6490 eV (1783 e-‐)

Split events due to charge spreading from conversion site to PPD site. (Substrate bias)

!

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Coming Soon (through fab)

37

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!"#$%&'()* 4 quadrants (512 x 512 x 16 μm 5TPPD pixel)X-‐Y address decodepixel clock driverscolumn aCDS/dCDS analog signal processorsoutput source follower buffers

Many operaSng modes possibleDesigned for high speed >40 fps

200 pins!!!

Package

Big Min II Signal Chain

38

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Pre-‐amp gain 2,3,4,8 V/V

Direct video out for dCDS

Clamp and dual sample and hold for a CDS

aCDS output2 V swing and50 MHz scanning for fast off-‐chip ADC

Low noise, high speed

JAZZ SB VI: Feb, 2011

39

• SB VI: lot of 10 n-‐type 8 inch wafers• ~50 potenSal devices (of each type)/wafer• 5 good wafers reported thus far• Many experimental pixels and implants

Metal-‐ Insulator-‐Metal Capacitor

40

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• Vary conversion gain of a pixel by changing the sense node capacitance

• Variable dynamic range and read out noise

• Test pixel with LED illuminaSon• Two MIM states in a 24 μm 3TPPD pixel

MIM Pixel Performance

41

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Fe55 X-‐rays

• Two MIM gain states response to Fe55 X-‐rays

• Photon Transfer Curves in DN and electrons• NoSce that the read noise in DN is essenSally constant because the read noise is generated by the pixel’s source follower, downstream of the MIM and sense node

Buried vs Surface Channel MOSFET

42

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Sub ElectronRead Noise

43

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“Self Triggered” Pixels

44

• 5TPPD pixel with high gain• Add on pixel aCDS (rapid reset and reads)?• Add low level discriminator• Set polling flag in X and/or Y• No frame reads, only row and/or column for set pixels• Long intervals between global resets• Goal -‐ sub millisec Sme resoluSon while maintaining performance• Preliminary test pixels in SB VI minimal -‐ Chandra

Beyond the Reticle Limit

45

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• CMOS foundry limitaSons on the size of a single reScle (art work mask) is about 21 x 21 mm

• Limits the size of a single device• e.g., BigMin II: 1k x 16 μm

•Mask alignment is very good• Allows traces to line-‐up so that larger arrays can be “sStched” together as shown

• Reduces cost by reuse of masks

Next Imager 4k x 4k

46

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The Limit???

47

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48

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RadiaSon Hard

49

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Summary

50

• CMOS imaging is real• For IR hybrid devices are needed• For X-‐rays thick Si is okay• CMOS readout noise is geVng beier– Hybrids achieve ~15 e-‐ single samples–Monolithics achieve ~2 e-‐ single samples

• Readout speed is geVng very good– 100’s to 1000’s frames/sec – X-‐ray “self triggered” pixels possible

• RadiaSon Hard• Large formats possible

!

!

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!"#$%&#'&(!)*&+#,%&--./&&--./0123.

Documents

What's New with CMOS Imaging Arrays