Embed Size (px)
DESCRIPTION
Welcome to EE 130/230M Integrated Circuit Devices. Instructors: Prof. Tsu -Jae King Liu and Dr. Nuo Xu ( tking and nuoxu @eecs.berkeley.edu) TA: Khalid Ashraf ([email protected]) Web page: http://www-inst.eecs.berkeley.edu/~ee130/ - PowerPoint PPT Presentation
Citation preview
Welcome to EE 130/230MIntegrated Circuit Devices
Instructors: Prof. Tsu-Jae King Liu and Dr. Nuo Xu (tking and nuoxu @eecs.berkeley.edu)
TA: Khalid Ashraf ([email protected])
Web page: http://www-inst.eecs.berkeley.edu/~ee130/bSpace site: EE 130/230M Spring 2013
Objectives: •Fundamental understanding of the working principles of semiconductor devices used in modern ICs. •An ability to design a transistor to meet performance requirements within realistic constraints.
Schedule• Lectures (247 Cory): TuTh 11AM-12:30PM • Discussion Section (beginning Wednesday 1/23):
– Section 101 (289 Cory): We 2-3PM
• Office Hours:– Prof. Liu (225 Cory): Mo 4-5PM– Nuo Xu (225 Cory): Tu 3-4PM– Khalid Ashraf (382 Cory): We 4-5PM
EE130/230M Spring 2013 Course Overview, Slide 2
Relation to Other Courses• Prerequisite:
– EECS40: Basic properties of semiconductors; basic understanding of transistor operation
– Familiarity with the Bohr atomic model
• Relation to other courses: – EE130 is a prerequisite for EE231 (Solid State Devices)– EE130 is also helpful (but not required) for IC analysis
and design courses such as EE140 and EE141, as well as for the microfabrication technology course EE143
EE130/230M Spring 2013 Course Overview, Slide 3
Reading Material• Textbook:
Semiconductor Device Fundamentals by R. F. Pierret(Addison Wesley, 1996)
• Reference:– Modern Semiconductor Devices for Integrated
Circuits by C. Hu (Prentice Hall, 2009)
EE130/230M Spring 2013 Course Overview, Slide 4
Grading– Homework (posted online)
• due Th (beginning of class) • late homeworks not accepted!
– Design project• assigned on 4/11, due on May 9•You may work in pairs
– 6 Quizzes •25 minutes each• closed book (1pg of notes allowed)• no make-up quizzes
– Final exam• Th 5/16 from 8AM to 11AM• closed book (6 pages of notes allowed)
10%
20%
30%
40%
Letter grades will be assigned based approximately on the following scales:
EE130
A+: 98-100A: 88-98A-: 85-88B+: 83-85B: 73-83B-: 70-73C+: 68-70C: 58-68C-: 55-58D: 45-55F: <45
EE230M
A+: 99-100A: 91-99A-: 90-91B+: 89-90B: 81-89B-: 80-81C+: 79-80C: 71-79C-: 70-71D: 60-70F: <60
EE130/230M Spring 2013 Course Overview, Slide 5
Miscellany• Special accommodations:
– Students may request accommodation of religious creed, disabilities, and other special circumstances. Please meet with Prof. Liu to discuss your request, in advance.
• Academic (dis)honesty– Departmental policy will be strictly followed– Collaboration (not cheating!) is encouraged
• Classroom etiquette:– Arrive in class on time! – Bring your own copy of the lecture notes.– Turn off cell phones, etc.– Avoid distracting conversations
EE130/230M Spring 2013 Course Overview, Slide 6
The Integrated Circuit (IC)• An IC consists of interconnected electronic components
in a single piece (“chip”) of semiconductor material.
The first planar IC(actual size: 0.06 in. diameter)
• In 1959, Robert Noyce (Fairchild Semiconductor) demonstrated an IC made in silicon using SiO2 as the insulator and Al for the metallic interconnects.
• In 1958, Jack S. Kilby (Texas Instruments) showed that it was possible to fabricate a simple IC in germanium.
EE130/230M Spring 2013 Course Overview, Slide 7
300mm Si wafer
From a Few, to Billions of Components• By connecting a large number of components, each performing simple
operations, an IC that performs complex tasks can be built. • The degree of integration has increased at an exponential pace over
the past ~40 years.Moore’s Law: The # of devices on a chip doubles every ~2 yrs,
for the same chip price.
EE130/230M Spring 2013 Course Overview, Slide 8
Intel Ivy Bridge Processor1.4B transistors, 160 mm2
Impact of Moore’s Law#
DEVI
CES
(MM
)
YEAR
Market Growth
Investment
Transistor Scaling
Higher Performance,Lower Cost
CMOS generation: 1 um • • 180 nm • • 22 nm
http://www.morganstanley.com/institutional/techresearch/pdfs/2SETUP_12142009_RI.pdf
EE130/230M Spring 2013 Course Overview, Slide 9
The Nanometer Size Scale
Carbon nanotube
MOSFET
1 micrometer (1 m) = 10-4 cm; 1 nanometer (nm) = 10-7 cmEE130/230M Spring 2013 Course Overview, Slide 10
Course Overview1. Semiconductor Fundamentals – 3 weeks
2. Metal-Semiconductor Contacts – 1 week
3. P-N Junction Diode – 3 weeks
4. MOS Capacitor – 2 weeks
5. MOSFET – 2 weeks
6. Bipolar Junction Transistor – 2 weeks
7. Modern CMOS Technology – 1 week
Metal-Oxide-Semiconductor (MOS)Field-Effect Transistor (FET)
EE130/230M Spring 2013 Course Overview, Slide 11
