Welcome to 3.091Lecture 14

October 13, 2009

Semiconductors

Zs. f. Phys., 44, 455-472 (1927)

© Springer. All rights reserved.This content is excluded from our Creative Commons license. For more information, see http://ocw.mit.edu/fairuse. Source: Fig. 1 in Heitler, W., and F. London. "Wechselwirkung neutraler Atome und homöopolare Bindung nach derQuantenmechanik." Zeitschrift für Physik A: Hadrons and Nuclei 44 (1927): 455-472.

antibonding

bonding

© Springer. All rights reserved.This content is excluded from our Creative Commons license. For more information, see http://ocw.mit.edu/fairuse. Source: Fig. 1 in Heitler, W., and F. London. "Wechselwirkung neutraler Atome und homöopolare Bindung nach derQuantenmechanik." Zeitschrift für Physik A: Hadrons and Nuclei 44 (1927): 455-472.

Image by Pieter Kuiper on Wikipedia.

Images by Inductiveload at Wikipedia.

Courtesy of Elsevier, Inc., http://www.sciencedirect.com. Used with permission.

Courtesy of Elsevier, Inc., http://www.sciencedirect.com. Used with permission.

Photo by Twisp at Wikipedia. Photo courtesy of NASA Glenn Research Center.

Bardeen, Brattain, Shockley

Bell Labs

1947

Single Crystalof Ge

Nobel Prize

Photo of the first point-contact transistor

removed due to copyright restrictions.

1956

increasing bond

increasing Egincreasing �� strength

increasing ��increasing bond

strength

increasing Eg

� = 7x10-6 m, infrared night vision

� = 5x10-7 m, visible light meter

GaAs0.6P0.4GaAs0.6P0.4GaAs0.6P0.4GaAs0.6P0.4GaAs0.6P0.4GaAs0.6P0.4GaAs0.6P0.4GaAs0.6P0.4GaAs0.6P0.4GaAs0.6P0.4GaAs0.6P0.4GaAs0.6P0.4

660 nm

590 nm

GaAs0.6P0.4 GaAs0.6P0.4 GaAs0.15P0.85

green: GaP

565 nm

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3.091SC Introduction to Solid State Chemistry Fall 2009

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