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11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

VN3205

Advanced DMOS TechnologyThese enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertexs well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficien

inherent in MOS devices. Characteristic of all MOS structures

these devices are free from thermal runaway and thermally-

induced secondary breakdown.

Supertexs vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fas

switching speeds are desired.

Features Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Applications Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum RatingsDrain-to-Source Voltage BVDSSDrain-to-Gate Voltage BVDGS

Gate-to-Source Voltage 20V

Operating and Storage Temperature -55C to +150C

Soldering Temperature* 300C

* Distance of 1.6 mm from case for 10 seconds.

TO-92

D1

D4

G1

G4

S1

S4

NC NC

S2

S3

G2

G3

D2

D3

Package Options

Note: See Package Outline section for dimensions.

1

7

6

5

4

3

2

top view

14

13

12

11

10

9

8

14-pin DIP

TO-243AA(SOT-89)

S G D

G

D

S

D

BVDSS / RDS(ON) VGS(th) Order Number / Package

BVDGS (max) (max) TO-92 14-Pin P-DIP TO-243AA* Die

50V 0.3 2.4V VN3205N3 VN3205N6 VN3205N8 VN3205ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

MIL visual screening available

Ordering Information

N-Channel Enhancement-ModeVertical DMOS FETs

Product marking for TO-243AA:

VN2L

Where = 2-week alpha date code

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Symbol Parameter Min Typ Max Unit Conditions

BVDSS Drain-to-Source Breakdown Voltage 50 V VGS = 0V, ID = 10mA

VGS(th) Gate Threshold Voltage 0.8 2.4 V VGS = VDS, ID = 10mA

VGS(th) Change in VGS(th) with Temperature -4.3 -5.5 mV/ C VGS = VDS, ID = 10mA

IGSS Gate Body Leakage 1 100 nA VGS = 20V, VDS = 0V

IDSS Zero Gate Voltage Drain Current 10 A VGS = 0V, VDS = Max Rating

1 mA VGS = 0V, VDS = 0.8 Max RatingTA = 125C

ID(ON) ON-State Drain Current 3.0 14 A VGS = 10V, VDS = 5V

RDS(ON) TO-92 and P-DIP 0.45 VGS = 4.5V, ID = 1.5A

SOT-89 0.45 VGS = 4.5V, ID = 0.75A

TO-92 and P-DIP 0.3 VGS = 10V, ID = 3A

SOT-89 0.3 VGS = 10V, ID = 1.5A

RDS(ON) Change in RDS(ON) with Temperature 0.85 1.2 %/ C VGS = 10V, ID = 3A

GFS Forward Transconductance 1.0 1.5 VDS = 25V, ID = 2A

CISS Input Capacitance 220 300

COSS Common Source Output Capacitance 70 120 pF

CRSS Reverse Transfer Capacitance 20 30

td(ON) Turn-ON Delay Time 10

tr Rise Time 15

td(OFF) Turn-OFF Delay Time 25

tf Fall Time 25

VSD Diode Forward Voltage Drop 1.6 V VGS = 0V, ISD = 1.5A

trr Reverse Recovery Time 300 ns VGS = 0V, ISD = 1A

Notes:

1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Package ID (continuous)* ID (pulsed) Power Dissipation jc ja IDR* IDRM@ TC = 25C C/W C/W

TO-92 1.2A 8.0A 1.0W 125 170 1.2A 8.0A

SOT-89 1.5A 8.0A 1.6W (TA = 25C) 15 78 1.5A 8.0A

Plastic DIP 1.5A 8.0A 3.0W 41.6 83.3 1.5A 8.0A

* ID

(continuous) is limited by max rated Tj. T

A= 25C.

Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate. Total for package.

VN3205

Electrical Characteristics (@ 25C unless otherwise specified)

ns

Thermal Characteristics

VGS = 0V, VDS = 25V

f = 1 MHz

VDD = 25V

ID = 2A

RGEN = 10

Static Drain-to-Source

ON-State Resistance

Switching Waveforms and Test Circuit

90%

10%

90% 90%

10%10%

PULSEGENERATOR

VDD

RL

OUTPUT

D.U.T.

t(ON)

td(ON)

t(OFF)

td(OFF) tFtr

INPUT

INPUT

OUTPUT

10V

VDD

Rgen

0V

0V

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Output Characteristics

20

16

12

8

4

0

VDS (volts)

VDS (volts)

VDS (volts)

ID(amperes)

ID(amperes)

Saturation Characteristics

Maximum Rated Safe Operating Area

0 100101

10

1.0

0.1

.01

ID(ampere

s)

Thermal Response Characteristics

ThermalResistance(normalized)

1.0

0.8

0.6

0.4

0.2

0

0.001 100.01 0.1 1.0

tp (seconds)

Transconductance vs. Drain Current

5

4

3

2

1

0

0 42

GFS(siemens)

ID (amperes)

Power Dissipation vs. Temperature

0 15010050

2.0

1.6

1.2

0.8

0.4

01257525

TC (C)

PD

(watts)

P-DIP

TO-243AA (TA = 25C)

TO-92

TA = -55C

0 10 20 30 5040

4V

3V

0 2 4 6 108

125C

6 108

10V

8V

6V

20

16

12

8

4

0

4V

3V

10V

8V

6V

TO-92 (pulsed)

P-DIP (pulsed)

TO-243AA (DC)

TO-92 (DC)

P-DIP (DC)

VGS =VGS =

VDS = 25V

TO-243AA

TA = 25C

PD = 1.6W

TO-243AA(pulsed)

TC = 25CTO-92

PD = 1W

TC = 25C

25C

Typical Performance Curves

VN3205

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1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 FAX: (408) 222-4895

www.supertex.com

11/12/01

2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.

Gate Drive Dynamic Characteristics

Q (nanocoulombs)G

VGS

(volts)

Tj (C)

VGS(th)(normalized)

RDS(ON)(normalized)

V DS(ON)GS(th) and R Variation with Temperature

On-Resistance vs. Drain Current

RDS(ON)(ohm

s)

Variation with TemperatureDSS

DSS

BV

(normalized)

C)(Tj

Transfer Characteristics

VGS (volts)

I

(amperes)

D

Capacitance vs. Drain-to-Source Voltage

300

C

(pico

farads)

VDS (volts)

ID (amperes)

BV

0 10 20 30 40

100

400

200

0

0 2 4 6 8 10

10

8

6

4

2

0

-50 0 50 100 150

1.1

1.0

1.0

0.8

0.6

0.4

0.2

0

1.2

1.1

1.0

0.9

0.8

0.7

10

8

6

4

2

0 1 2 3 4 5

-50 0 50 100 150

325 pF

VDS = 40V

VDS = 10V

VGS = 4.5V

VGS = 10V

T = -55CA

VDS = 25V

125C

0 4 8 12 2016

f = 1MHz

CISS

COSS

CRSS

0.9

215 pF

1.6

1.4

1.2

1.0

0.8

0.6

VGS(th) @ 1mA

25C

0

RDS(ON) @ 10V, 3A

VN3205

Typical Performance Curves