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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Vapor-Phase Processing:The Next Revolution in Paper Manufacturing?
Mark D. LosegoAssistant Professor of Materials Science and Engineering, Georgia Techwww.losegolab.gatech.edu
Or Functional Paper: From Hydrophobic to Phosphorescent – What Properties are Possible?
Renewable Bioproducts Institute (RBI) Annual Executive Meeting 2016
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
• Introduction to Atomic Layer Deposition
• State-of-the-Art in ALD Manufacturing
• ALD: Near-Term Opportunities for Paper Manufacturing
• Vapor-Phase Modification: Immediate Opportunities for Paper Manufacturing
• Summary
Outline
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
• We do Materials Synthesis* including thin film deposition (PVD, CVD, ALD), polymerization, surface functionalization, and electrochemical processing.
• Our primary interests are in materials systems that (a) combine organic and inorganic components or (b) use 3-dimensionality to enhance functionality.
*Note: We design and build all of our own deposition tools (hardware & software) for maximum adaptability.
Nano-scale heat transport
Materials forNational Security
Molecular Catalysis
PlasmonicSensing
FunctionalTextiles
Chemical Synthesis & Vacuum Processing
Materials for Microelectronics
DSSCs
Conductive Oxides
Capacitors
Materials for Renewable Energy
SolarFuels
VaporBarriers
Ferroelectrics
The Losego Lab
0.5 mm
Tungsten Photonic Structure
MOF on Textile
ALD Reactor
Vapor Barriers Film on Foil
Capacitors
Solar Fuels
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering4
Atomic Layer Deposition:
An Introduction to the Basics
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Atomic layer deposition (ALD) is a vapor-phase thin film deposition technique that proceeds via a sequential set of surface reactions that are self-limiting.
Precursors chemicals are delivered in the gas phase.
Precursors are delivered sequentially (NOT concurrently).
Precursors only react with solid surfaces, not with other precursors in the gas phase.
Precursors do not react with themselves.
Definition
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering6
Atomic Layer Deposition
Dose Precursor (Metal Organic or Metal Halide)
Purge Precursor(Inert Gas Purge)
Surface Reaction + Byproduct Removal
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering7
Atomic Layer Deposition
Dose Co-Reactant (Oxidant or Reductant)
Purge Precursor(Inert Gas Purge)
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Atomic Layer Deposition
Dose Precursor (Metal Organic or Metal Halide)
Dose Co-Reactant (Oxidant or Reductant)ETC…
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering9
Virtues of ALD
Ritala, M. et al., Chem. Vap. Dep. 5 7 (1999)
1 mm
Losego & Arpin, Nat. Comm. 4 2630 (2013)
0.5 mm
1. Provides highly conformal coatings,even over complex nanostructured3D architectures
2. Provides very high precision andreproducibility in film thickness.(deposition rates of ≈ 1 Å / cycle)
3. Potential for low process temperaturescompatible with polymer substrate.(Many oxide ALD processes < 150°C)
3.8 nm
50 cycles
Triyoso et al. JVSTB 23 288 (2005)
Nylon Tungsten- Coated Nylon
Spagnola et al. J. Mater. Chem. 20 4213 (2010)
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering10
Nuances of ALD1. ALD is NOT like the cartoons!
1 cycle does not necessarily equal1 atomic layer. For example,TMA/H2O cycles are ~1/3 of alayer.
2. Subsurface deposition occurs formany polymeric systems.
3. Film density and organic contentcan change with temperature.
4. Nucleation can be a problem.
5. Byproducts can cause problems.Mackus, Bol, and Kessels, Nanoscale 6 10941 (2014)
Platinum ALD
Delay!
Ligands block sites!
Subsurface!
Al:ZnO ALD
Nylon
Deposition Temperature
Ref
ract
ive
Ind
ex
Elam & George, Chem. Mater. 15 1020(2003)
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
All Sorts of Materials Can Be Deposited by ALD…
Miikkulainen, Leskala, Ritala, Puurunen J. Appl. Phys. 113, 021301 (2013)
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
An ALD Reactor in the Losego Lab
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
A Commercial ALD Reactor (Beneq)
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering14
So this is just a research curiosity?
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
2007
Starting with the 45 nm node (circa2007), all integrated circuits havebeen manufactured using ALD todeposit the transistor’s gate oxide.
(400,000,000+ transistors in this IC)
We all (probably) own something manufactured by ALD
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering16
State-of-the-Art in ALD
Manufacturing
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Challenges to ALD Manufacturing
1. Low Throughput–Research systems like our flow tube reactors can take 2 min / cycle, which equates to 1.5 days to deposit 0.1 mm.-Can be overcome by increasing pumping speeds, using batch processing
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Skarp, ECS Trans. 33 447 (2010).
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Large Batch ALD Manufacturing
2007
Used in semiconductor industry (ICs and PVs)-ALD used for gate oxides since 2007
• About 4 s per cycle• 1.5 nm/min or 0.1 mm/hr• Up to 500 wafers per batch
Shown: Applied Materials (USA) and Beneq (Finland)
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Challenges to ALD Manufacturing
1. Low Throughput–Research systems like our flow tube reactors can take 2 min / cycle, which equates to 1.5 days to deposit 0.1 mm.-Can be overcome by increasing pumping speeds, using batch processing
2. Non-Continuous Processing–Research reactors that use temporal dose/purge steps are not readily adaptable to a continuous process-Continuous ALD systems use spatial separation of precursors
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Lotus Applied Technologies (USA)
Precursor Zone
Coreactant Zone
Purge Zone
Poodt et al., JVSTA. 30 010802 (2012).
Levitech (Netherlands)
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Continuous Manufacturing: Spatial ALD
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Eastman Kodak (USA)
Continuous ALD Manufacturing
ASTRaL (Finland)Poodt et al., JVSTA. 30 010802 (2012).
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Outlook for ALD Manufacturing
1. A number of companies are developing ALD systems for manufacturing
2. Large batch ALD systems are already usedfor manufacturing ICs and PVs
1. Spatial ALD reactors are coming and could revolutionize paper & textile manufacturing (Next 5 to 10 years)
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering23
Atomic Layer Deposition:Opportunities for Paper Modification
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Light Bulb!
Before After
Conformal Coating
Micrograph from a cotton ball
Electrically Conductive Paper
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Color Changing Paper?
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In collaboration with the Reynolds Group at GT
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Hanson, Oldham, & Parsons J. Vac. Sci. Technol. A, 30 01A117 (2012)
ALD coatings of TiO2 or ZnO act like sunscreen and prevent the UV degradation of mechanically pulped papers like newsprint.
Newspaper That Resists UV Degradation
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering27
Single-Cycle Vapor Modification:An Immediate Opportunity for Paper
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Precursor
Pump
Single Cycle Vapor Phase Modification
1. Evacuate chamber
2. Fill chamber with reactive, volatile precursor.
3. Wait for reaction
4. Evacuate chamber.
5. Vent and remove.
Paper
28
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Gaseous Precursors Get EVERYWHERE
(a) Cotton (b) Paper
(c) Denim (d) Cardboard
We are able to convert cellulosic fibers from hydrophilic to hydrophobic using a single exposures cycle that takes < 1 min.
This effect is irrespective of the cellulose’s form factor because gaseous precursors can diffuse everywhere!
(Or “Look, Mom, No Surface Tension!”)
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Water Repellent Paper
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Water Repellent Cardboard
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Fluorescence
MagnetismAnti-Bacterial
Hydrophobicity
Organics
Erbium,Europium
Iron,Cobalt
Oxides
Potential to Introduce More Functionality
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Burgeoning opportunities in vapor-phase modification of paper-based products.
Roll-to-roll atomic layer deposition has the potential to revolutionize paper and textile manufacturing.(Who will seize this opportunity?)
An even more immediate opportunity is to use single-cycle (or few cycle) vapor phase processing techniques to enhance the properties of FINISHED paper products.
-Water Repellency-Anti-Bacterial-Phosphorescence / Fluorescence-Magnetism
Summary
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Acknowledgments
ACS Petroleum Research
Fund Doctoral New
Investigator Program under
Award Number 55526-
DNI10.
The Losego Group @ Georgia Tech
Brandon Piercy (Graduate Student)Collen Leng (Graduate Student)Daniel Yin (Undergraduate)Derek Henry (Undergraduate)Shawn Gregory (Undergraduate)Andrew Short (Undergraduate)
Georgia Tech Startup Funds
Research Funding
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Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Losego Lab – www.losegolab.gatech.eduSchool of Materials
Science & Engineering
Kalanyan, Losego et a. Chem. Vap. Deposition 19, 161 (2013).
36
“Ideal” ALD
The ALD “Temperature Window”
*Sometimes this window is only a few degrees
• Provide sufficient precursor to saturate the surface
• Purge sufficiently long to remove all excess precursor
• Work within a temperature window where ONLY surface reactions are thermodynamically favored.