Silicon Light Machines Confidential

UVDI Technology Overview

Ultra Violet Direct ImagingBased on

Integrated GLV Technology

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Grating Light Valve TechnologySpatial Light Modulation Based on Diffraction

Specular State – No Bias Diffraction State – Bias Applied

Air Gap

Common Electrode(Ground Plane)

IncidentLight

DiffractedLight+1 Order

Diffracted

Light

-1 Order

IncidentLight Reflected

Light

Moving Ribbon(bias voltage applied)

Fixed Ribbon

GLV DeviceCross

Section

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Integrated MEMS – What is it?

“Integration” = CMOS + MEMS on the same chipMEMS devices must interfaced to outside world. These interfaces can fall into 2 general categories:§ Multi-chip packaging solutions (multiple chips wire-bonded)§ Monolithic integration solutions (single chip)

Motivation for integration:§ Performance (high density, low parasitics, e.g. iGLV)§ Cost (reduced component count)

SLM is one of the few companies to successfully realize a fully integrated MEMS/CMOS device (iGLV)§ 2006: SLM integrated GLV with Cypress Via-link 2.7 process§ 2009: SLM is integrating GLV with Freescale SmartMOS07

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Discrete & Integrated Solutions

Worked well for CtP application§ 1088 channels§ 28 mm die length § 25.5 um channel

pitch

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Required because of UVDI channel count § 8192 channels§ 41 mm die length§ 5 um channel pitch

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Integrated Process Flow

Si substrateDiffusions

GLV Nitride

Interlevel dielectric (ILD1)

ILD2

Gate Poly

Metal 1

Metal 2

Sacrificial Poly

Contact

Via

Transistor diffusions are first. Poly-Si gate lines followed by first insulating oxide & polish (CMP)Contacts are drilled & filled. Surface is polished again.GLV sacrificial layer is deposited & patternedLPCVD silicon nitride ribbon deposition.Metal1 deposited & patterned, more dielectric, vias, and Metal2.GLV re-exposed with high-selectivity etching & final interconnectFinal MEMS ribbon patterning. GLV complete

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New 8K Integrated GLV Device

§ GLV linear array has 8192 addressable elements§ 12-14 bit Grayscale (independent of frame rate)§ Designed for UV applications

GLV Array

Integrated Driver Electronics

Silicon Light Machines Confidential

Direct Write Lithography Applications

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GLVTM Direct Write Lithography

Developed new, high pixel count Ultra Violet Digital Imaging (UVDI) GLV module

Customer system currently in Beta trials in production fab

UVDI Module can be modified for visible (RGB) applications

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Application Overview

Line Illumination Optics

UVDI GLVModules (8X)

10:1 ReductionOptics

Line Images

Line Illumination Optics

UVDI GLVModule

ReductionOptics

Line Images

UV Laser (355nm)

Substrate

GLV Device

Maskless Lithography using GLV

GLV module for ultra-violet direct imaging in lithography system

8192 controllable-element, UV version of GLV light modulator product for lithography

Integrated drive electronics with MEMS light modulator

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MFS = 2.5 µm

GLV pixel addressing

GLV timing

MAS = 0.5 µm

Tim

e st

ep =

1/5

Col

Per

iod

Col Timing

MFS:Minimum Feature SizeMAS:Minimum Address Size

Micro-address Technology

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GLV Maskless Lithography

355nm exposure

I-line resist

2 micron resolution

2 µm

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Wafer Direct Imaging

300 mm wafer

2.5 um resolution

Provided by courtesy of

Dainippon Screen R&D Center

Silicon Light Machines Confidential