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""UnderUnder PressurePressure" " -- fromfrom High High VoltageVoltage to MEMS to MEMS PressurePressure
Sensors Sensors WaferWafer ProbingProbing
Rainer Gaggl, Rainer Gaggl, Ph.DPh.D..T.I.P.S.MesstechnikT.I.P.S.Messtechnik GmbHGmbH
June 8June 8--11, 200811, 2008San Diego, CA USASan Diego, CA USA
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
OverviewOverview
• High Voltage Devices vs. MEMS Pressure Sensors – the D.U.T.
• HV Wafer Test - overview• MEMS Pressure Sensors• Probe Card Concept• Features• Summary
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
TheThe D.U.T. D.U.T. ……. .
• High Voltage Devices vs. MEMS Pressure Sensors
Gate
Emitter
High Voltage IGBT (Wafer)
≈
13 mm
MEMS Pressure Sensor
Pressure Sensing
Membrane Structure
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
High High VoltageVoltage DevicesDevices
• Test of breakthrough voltage for high voltage IGBTs, Diodes, MOSFETSChallenge: flashovers ….
GND
Probe(s)
+HV Wafer Chuck, Prober
Source-Pad, GNDPad 2,High Voltage
Wafer
d… when field strength
E=U/dexceeds breakthrough
limit of atmosphere
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
AvoidingAvoiding FlashoversFlashovers……. .
• Physics of Gas Discharges: – breakthrough voltage increases with atmospheric pressure -
"Paschen Curves" – breakthrough voltage vs. pressure
600 V
10 kVarea of
wafer test ……..byby applicationapplication of of
pressurepressure !!Paschen Diagram for Air
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
High High VoltageVoltage Probe Card Probe Card
• Concept of "Luftpolster" probe card *)– device is tested under increased atmospheric pressure
(compressed air)
*) presented at SWTW 2002
gas inlet
prober chuck
probe needle(s) wafer
"Luftpolster" pressure chamber
chamber sealto wafer
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
MEMS MEMS PressurePressure Sensors Sensors
• Technology: surface micro machined sensor cell
Bond pad
CMOS circuitry
Sensor cell area
Array of cells to
increase sensitivity
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
barometric air pressure sensors – e.g. used in engine control unit (ECU)
ApplicationsApplications forfor MEMS MEMS PressurePressure Sensors (Sensors (exampleexample) )
side crash detection for air bag release
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
ProbingProbing MEMS MEMS PressurePressure SensorsSensors……• signal capture through electrical probes• + mechanical excitation of sensor cells…..
….by application of pressure !
Same concept (though refined) as for High Voltage Wafer Test can be employed:
"LuPo-ABS" Probe Card
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
""LuPoLuPo--ABSABS" Probe Card" Probe Card
compressed air
prober chuck
probe needles
wafer
pressure chamber
gap seal≈
80 µm
PCBmovable side wall
principle setup of "No Touch" – gap seal probe card
•"LuPo-ABS": Luftpolster – Air Bearing Seal
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
""LuPoLuPo--ABSABS" Probe Card" Probe Card
Probe card top view with chip- scale pressure chamber
Probe card bottom view
"LuPo- ABS"
gap seal
pressure chamber
air connectors
Load board with electro-pneumatical components
magnetic valve
reference sensor
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
""LuPoLuPo--ABSABS" Probe Card " Probe Card -- detailsdetails
"LuPo-ABS" movable side wall with gap
sealpressure chamber
air piping
probes(2x2 array)
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
""LuPoLuPo--ABSABS" " -- Features (1)Features (1)
LuPo - pressure profile
-30
0
30
60
90
120
0 2 4 6 8 10 12 14
LuPo dimension / mm
pres
sure
/ kP
a
pressure chamberinner diameter
gap seal region
outside of chamber
Pressure profile of LuPo pressure chamber (diameter 8 mm)
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
""LuPoLuPo--ABSABS" " -- Features (2)Features (2)
Rise time, fall time of chamber pressure at switching from atmospheric pressure to approx. 1 bar overpressure
550 ms 80 ms
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
""LuPoLuPo--ABSABS" " -- SummarySummary• Based on a chip-scale pressure chamber with
a movable side wall that rests hovering about 80µm above the wafer surface - without touching it
• Application in wafer test of pressure sensors and high voltage devices
• Very homogenious pressure profile due to static pressure generation (compared to dynamic pressure generation with nozzles blowing on wafer)
• Fast change of pressure levels: wafer-level sensor calibration feasible
• Suitable for multi-site testing (up to 16x demonstrated)• Suitable for integration in modern prober environment
(probe card changer, automatic docking of air supplies)
June 8 to 11, 2008June 8 to 11, 2008June 8 to 11, 2008
AcknowledgementsAcknowledgements
• A. Reithofer, F. Reinwald, Infineon Technologies• customers that remain anonymous…