Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A• Tight parameter distribution• Safe paralleling• Positive VCE(sat) temperature coefficient• Low thermal resistance• Very fast soft recovery antiparallel diode

Applications• Photovoltaic inverters• High frequency converters

DescriptionThis device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents anoptimum compromise between conduction and switching loss to maximize theefficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer parallelingoperation.

Product status link

STGWA80H65DFB

Product summary

Order code STGWA80H65DFB

Marking GWA80H65DFB

Package TO-247 long leads

Packing Tube

Trench gate field-stop 650 V, 80 A high speed HB series IGBT

STGWA80H65DFB

Datasheet

DS11933 - Rev 2 - June 2019For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 650 V

ICContinuous collector current at TC = 25 °C 120 (1)

AContinuous collector current at TC = 100 °C 80

ICP (2) Pulsed collector current (tp ≤ 1 μs, TJ < 175 °C) 300 A

VGEGate-emitter voltage ±20 V

Transient gate-emitter voltage ±30 V

IFContinuous forward current at TC = 25 °C 120 (1)

AContinuous forward current at TC = 100 °C 80

IFP (2) Pulsed forward current (tp ≤ 1 μs, TJ < 175 °C) 300 A

PTOT Total power dissipation at TC = 25 °C 470 W

TSTG Storage temperature range - 55 to 150°C

TJ Operating junction temperature range - 55 to 175

1. Current level is limited by bond wires2. Defined by design, not subject to production test.

Table 2. Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 0.32

°C/WRthJC Thermal resistance junction-case diode 0.66

RthJA Thermal resistance junction-ambient 50

STGWA80H65DFBElectrical ratings

DS11933 - Rev 2 page 2/16

2 Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdownvoltage VGE = 0 V, IC = 2 mA 650 V

VCE(sat)Collector-emitter saturationvoltage

VGE = 15 V, IC = 80 A 1.6 2

VVGE = 15 V, IC = 80 A, TJ = 125 °C 1.8

VGE = 15 V, IC = 80 A, TJ = 175 °C 1.9

VF Forward on-voltage

IF = 80 A 1.9 2.3

VIF = 80 A, TJ = 125 °C 1.6

IF = 80 A, TJ = 175 °C 1.5

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 650 V 100 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 nA

Table 4. Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance

VCE= 25 V, f = 1 MHz, VGE = 0 V

- 10524 -

pFCoes Output capacitance - 385 -

Cres Reverse transfer capacitance - 215 -

Qg Total gate chargeVCC = 520 V, IC = 80 A, VGE = 15 V (seeFigure 28. Gate charge test circuit)

- 414 -

nCQge Gate-emitter charge - 78 -

Qgc Gate-collector charge - 170 -

STGWA80H65DFBElectrical characteristics

DS11933 - Rev 2 page 3/16

Table 5. IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCE = 400 V, IC = 80 A, VGE = 15 V,RG = 10 Ω (see Figure 27. Test circuit forinductive load switching)

84 -ns

tr Current rise time 52 -

(di/dt)on Turn-on current slope 1270 - A/µs

td(off) Turn-off-delay time 280 -ns

tf Current fall time 31 -

Eon (1) Turn-on switching energy 2.1 -

mJEoff (2) Turn-off switching energy 1.5 -

Ets Total switching energy 3.6 -

td(on) Turn-on delay time

VCE = 400 V, IC = 80 A, VGE = 15 V,RG = 10 Ω, TJ = 175 °C (seeFigure 27. Test circuit for inductive loadswitching)

77 -ns

tr Current rise time 51 -

(di/dt)on Turn-on current slope 1270 - A/µs

td(off) Turn-off-delay time 328 -ns

tf Current fall time 30 -

Eon (1) Turn-on switching energy 4.4 -

mJEoff (2) Turn-off switching energy 2.1 -

Ets Total switching energy 6.5 -

1. Including the reverse recovery of the diode.2. Including the tail of the collector current.

Table 6. Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time

IF = 80 A, VR = 400 V, VGE = 15 V di/dt = 100 A/µs (see Figure 27. Test circuitfor inductive load switching)

- 85 - ns

Qrr Reverse recovery charge - 1105 - nC

Irrm Reverse recovery current - 26 - A

dIrr/dt Peak rate of fall of reverserecovery current during tb

- 722 - A/µs

Err Reverse recovery energy - 267 - µJ

trr Reverse recovery time

IF = 80 A, VR = 400 V, VGE = 15 V,TJ = 175 °C di/dt = 100 A/µs (seeFigure 27. Test circuit for inductive loadswitching)

- 149 - ns

Qrr Reverse recovery charge - 4920 - nC

Irrm Reverse recovery current - 66 - A

dIrr/dt Peak rate of fall of reverserecovery current during tb

- 546 - A/µs

Err Reverse recovery energy - 1172 - µJ

STGWA80H65DFBElectrical characteristics

DS11933 - Rev 2 page 4/16

2.1 Electrical characteristics (curves)

Figure 1. Power dissipation vs case temperature

100

00 TC(°C)

PTOT(W)

100

200

50

300

150

400

GIPD160920130948FSR

VGE = 15 V, TJ = 175 °C

Figure 2. Collector current vs case temperature

I C

60

40

20

00 25 T C (°C)

(A)

100

80

50 75

100

120

125 150

VGE =15 V,TJ =175 °C

GIPD160920130941FSR

Figure 3. Output characteristics (TJ = 25 °C)

IGBT060715EWFRWOC25

0 1 2 3 4 V CE (V)

160

140

120

100

80

60

40

20

0

I C (A) V GE = 15 V 13 V

11 V

9 V

7 V

Figure 4. Output characteristics (TJ = 175 °C)

IGBT060715EWFRWOC175

160

140

120

100

80

60

40

20

00 1 2 3 4

I C (A)

V CE (V)

V GE = 15 V 13 V11 V

9 V

7 V

Figure 5. VCE(sat) vs junction temperature

IGBT060715EWFRWVCET

2.6

2.2

1.8

1.4

1.0-50 0 50 100 150

V CE(sat) (V)

T J (°C)

V GE = 15 V

I C = 160 A

I C = 80 A

I C = 40 A

Figure 6. VCE(sat) vs collector current

IGBT060715EWFRWVCEC

2.4

2.0

1.6

1.2

0.8

0.4

0.00 40 80 120 160

V CE(sat) (V)

I C (A)

V GE = 15 V

T J = -40 °C

T J = 25 °CT J = 175 °C

STGWA80H65DFBElectrical characteristics (curves)

DS11933 - Rev 2 page 5/16

Figure 7. Collector current vs switching frequency

40

60

80

100

120

1 10

Ic [A]

f [kHz]

G Ωrectangular current shape,(duty cycle=0.5, VCC = 400V, R =10 ,VGE = 0/15 V, TJ =175°C)

Tc=80°C

Tc=100 °C

140

160

GIPD260520141426FSR

Figure 8. Forward bias safe operating area

IGBT171120161002FSOA

10 2

10 1

10 0

10 0 10 1 10 2

IC (A)

VCE (V)

single pulse, TC = 25°CTJ < 175 °C, VGE = 15 V

tp = 1µs

tp = 10µs

tp = 100µs

Figure 9. Transfer characteristics

IGBT060715EWFRWTCH

200

160

120

80

40

05 6 7 8 9

I C (A)

V GE (V)

V CE = 4 V

T J = 25 °C

T J = 175 °C

Figure 10. Diode VF vs forward current

VF

2.0

1.6

1.2

0.820 IF(A)

(V)

40 60

TJ= 175°C

25°C

-40°C

80 100 120 140

2.4

GIPD160920131135FSR

Figure 11. Normalized VGE(th) vs junction temperature

0.8

0.7

0.6-50 TJ(°C)

(norm)

0 50 100 150

0.9

1.0

1.1

GIPD160920131151FSR

IC = 1mA

VGE(th)

Figure 12. Normalized V(BR)CES vs junction temperature

0.9-50 TJ(°C)

VBR(CES)(norm)

0 50 100 150

1.0

1.1

GIPD160920131144FSR

IC = 2 mA

STGWA80H65DFBElectrical characteristics (curves)

DS11933 - Rev 2 page 6/16

Figure 13. Capacitance variations

10000

1000

100

101 VCE(V)

C(pF)

10 100

CIES

GIPD160920131200FSR

0.1

COES

CRES

Figure 14. Gate charge vs gate-emitter voltage

00 Qg(nC)

VGE(V)

100 200 300 400

4

16

GIPD160920131156FSR

IC = 80 A

8

12

VCC = 520 V

Figure 15. Switching energy vs collector current

E

2000

100000 IC(A)

(µJ)

20 40 60 80

3000

4000

5000

VCC= 400V, VGE = 15VRG= 10Ω, TJ= 175°C

100 120 140

60007000

80009000

EON

EOFF

GIPD160920131436FSR

Figure 16. Switching energy vs gate resistance

E

2600

1800

10002 RG(Ω)

(µJ)

6 10 14 18

3400

4200

5000

VCC= 400V, VGE = 15VIC= 80A, TJ= 175°C

EON

EOFF

GIPD160920131208FSR

Figure 17. Switching energy vs temperature

E

1500

100025 TJ(°C)

(µJ)

50 75 100 125

2000

2500

3000

VCC= 400V, VGE = 15VIC= 80A, Rg= 10Ω

150

EOFF

EON

1750

3500

4000

4500

GIPD160920131504FSR

Figure 18. Switching energy vs collector emitter voltage

E

3000

2000

1000150 VCE(V)

(µJ)

200 250 300 350

4000

5000

6000 TJ= 175°C, VGE = 15VIC= 80A, Rg= 10Ω

400

EOFF

EON

450

GIPD160920131524FSR

STGWA80H65DFBElectrical characteristics (curves)

DS11933 - Rev 2 page 7/16

Figure 19. Switching times vs collector current

t

100

10

1IC(A)

(ns)

20 40 60 80

TJ= 175°C, VGE = 15VVCC= 400V, Rg= 10Ω

100

tf

tdon

120

tr

tdoff

140

GIPD160920131533FSR

Figure 20. Switching times vs gate resistance

t

100

10Rg(Ω)

(ns)

4 8

TJ= 175°C, VGE = 15VVCC= 400V, IC= 80A

12

tr

tdon

tf

tdoff

16 20

GIPD160920131539FSR

Figure 21. Reverse recovery current vs diode currentslope

= 80 A

Irm

80

40

00 di/dt(A/µs)

(A)

500 1000 1500

VF= 400V, IF= 80A

2000 2500

TJ= 175°C

TJ= 25°C

120

GIPD160920131550FSR

Figure 22. Reverse recovery time vs diode current slope

trr

100

50

00 di/dt(A/µs)

(ns)

500 1000 1500

VF= 400V, IF= 80A

2000 2500

TJ= 175°C

TJ= 25°C

150

200

250

300

350

GIPD160920131557FSR

Figure 23. Reverse recovery charge vs diode currentslope

Qrr

2000

1000

00 di/dt(A/µs)

(nC)

500 1000 1500

VF= 400V, IF= 80A

2000 2500

TJ= 175°C

TJ= 25°C

3000

4000

5000

6000

7000

GIPD160920131602FSR

Figure 24. Reverse recovery energy vs diode currentslope

r

Err

400

200

00 di/dt(A/µs)

(µJ)

500 1000 1500

VF= 400V, IF= 80A

2000 2500

TJ= 175°C

TJ= 25°C

600

800

1000

1200

GIPD160920131610FSR

STGWA80H65DFBElectrical characteristics (curves)

DS11933 - Rev 2 page 8/16

Figure 25. Thermal impedance for IGBT

ZthTO2T_A

10 -1

10 -2

10 -5 10 -4 10 -3 10 -2 10 -1

K

tp (s)

δ = 0.5

δ = 0.2

δ = 0.1 δ = 0.05

δ = 0.02

δ = 0.01

Single pulse

Figure 26. Thermal impedance for diode

STGWA80H65DFBElectrical characteristics (curves)

DS11933 - Rev 2 page 9/16

3 Test circuits

Figure 27. Test circuit for inductive load switching

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

Figure 28. Gate charge test circuit

AM01505v1

k

k

k

k

k

k

Figure 29. Switching waveform

AM01506v1

90%

10%

90%

10%

VG

VCE

IC td(on)

ton

tr(Ion)

td(off)

toff

tf

tr(Voff)

tcross

90%

10%

Figure 30. Diode reverse recovery waveform

25

STGWA80H65DFBTest circuits

DS11933 - Rev 2 page 10/16

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

STGWA80H65DFBPackage information

DS11933 - Rev 2 page 11/16

4.1 TO-247 long leads package information

Figure 31. TO-247 long leads package outline

8463846_2_F

STGWA80H65DFBTO-247 long leads package information

DS11933 - Rev 2 page 12/16

Table 7. TO-247 long leads package mechanical data

Dim.mm

Min. Typ. Max.

A 4.90 5.00 5.10

A1 2.31 2.41 2.51

A2 1.90 2.00 2.10

b 1.16 1.26

b2 3.25

b3 2.25

c 0.59 0.66

D 20.90 21.00 21.10

E 15.70 15.80 15.90

E2 4.90 5.00 5.10

E3 2.40 2.50 2.60

e 5.34 5.44 5.54

L 19.80 19.92 20.10

L1 4.30

P 3.50 3.60 3.70

Q 5.60 6.00

S 6.05 6.15 6.25

STGWA80H65DFBTO-247 long leads package information

DS11933 - Rev 2 page 13/16

Revision history

Table 8. Document revision history

Date Revision Changes

17-Nov-2016 1First release.

Part number previously included in datasheet DocID024366.

25-Jun-2019 2Modified Table 1. Absolute maximum ratings.

Minor text changes.

STGWA80H65DFB

DS11933 - Rev 2 page 14/16

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

4.1 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

STGWA80H65DFBContents

DS11933 - Rev 2 page 15/16

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STGWA80H65DFB

DS11933 - Rev 2 page 16/16