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Transistor Dr. Cahit Karakuş

Transistorckk.com.tr/ders/analog/00 Transistor 02.pdfBJT Transistors • A transistor is a device which acts like a controlled valve. The current flow permitted can be controlled

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  • Transistor

    Dr. Cahit Karakuş

  • BJT Transistors

    • A transistor is a device which acts like a controlled valve. The current flow permitted can be controlled.

    • The bipolar junction transistor (BJT) is a three-terminal electronic valve - the output (collector) terminal current-voltage characteristics are controlled by the current injected into the input port (base). The BJT is a semiconductor device constructed from two pn junctions. There are two types of BJT: pnp and npn. Figures 1 and 2 show the circuit symbols and common current and voltage polarities during normal (active) operation.

  • DC Analiz

  • Vcc

    VBB

    Rc

    Ic

    C

    E

    BRB

    VBE

    VCE

    IE

    IB

    CECCCC VIRV *

    BEBBBB VIRV *

    BC II *

    B

    BEBBB

    R

    VVI

    C

    CCSATC

    R

    VI

    .0;0 OlurVVSaturasyonIIdayaVV CESATccCE

    .0;0 OlurAIIKesmedeiseAI CBB

  • RC

    VCE

    VBE

    Ic

    IE

    IB C

    E

    B

    RE

    RB

    Vcc

    EECECCCC IRVIRV **

    EEBEBBCC IRVIRV **

    BC II *

    BBBBCE IIIIII *)1(*

    CC

    CE II

    II *)1

    (

  • RC

    VCE

    VBE

    Ic

    IE

    IB C

    E

    B

    RE

    RB

    VccEECEBCCCC IRVIIRV *)(*

    EEBEBBBCCCC IRVIRIIRV **)(*

    BC II *

    BBBBCE IIIIII *)1(*

    CC

    CE II

    II *)1

    (

  • Vcc

    RC

    VCE

    VBE

    Ic

    IE

    IB C

    E

    B

    RE

    R1

    R2

    Vcc

    VBB

    Rc

    Ic

    C

    E

    BRB

    VBE

    VCEIB

    IE

    RE

    21

    2*RR

    RVV CCBB

    21

    21 *

    RR

    RRRB

    EECECCCC IRVIRV **

    EEBEBBBB IRVIRV **

    BC II *

    BBBBCE IIIIII *)1(*

    CC

    CE II

    II *)1

    (

  • Sem I 0809/rosdiyana

    Introduction to BJT Small Signal Analysis

    CHAPTER 5

  • 15

    Introduction

    •To begin analyze of small-signal AC response of BJT

    amplifier the knowledge of modeling the transistor is

    important.

    •The input signal will determine whether it’s a small signal

    (AC) or large signal (DC) analysis.

    •The goal when modeling small-signal behavior is to make of

    a transistor that work for small-signal enough to “keep

    things linear” (i.e.: not distort too much) [3]

    •There are two models commonly used in the small signal

    analysis:

    a) re model

    b) hybrid equivalent model

  • 16

    Disadvantage

    Re model

    • Fails to account the output impedance level of device and feedback effect from output to input

    Hybrid equivalent model

    • Limited to specified operating condition in order to obtain accurate result

    Introduction

  • 17

    • The transistor can be employed as an amplifying device. That is, the output sinusoidal signal is greater than the input signal or the ac input power is greater than ac input power.

    • How the ac power output can be greater than the input ac power?

    Amplification in the AC domain

  • 18

    Amplification in the AC domain

    Conservation; output

    power of a system

    cannot be large than its

    input and the efficiency

    cannot be greater than 1

    The input dc plays the

    important role for the

    amplification to

    contribute its level to the

    ac domain where the

    conversion will become

    as η=Po(ac)/Pi(dc)

  • 19

    • The superposition theorem is applicable for the analysis and design of the dc & ac components of a BJT network, permitting the separation of the analysis of the dc & ac responses of the system.

    • In other words, one can make a complete dc analysis of a system before considering the ac response.

    • Once the dc analysis is complete, the ac response can be determined using a completely ac analysis.

    Amplification in the AC domain

  • 20

    BJT Transistor Model • Use equivalent circuit

    • Schematic symbol for the device can be replaced by this equivalent circuits.

    • Basic methods of circuit analysis is applied.

    • DC levels were important to determine the Q-point

    • Once determined, the DC level can be ignored in the AC analysis of the network.

    • Coupling capacitors & bypass capacitor were chosen to have a very small reactance at the frequency of applications.

  • 21

    The AC equivalent of a network is

    obtained by:

    1. Setting all DC sources to zero & replacing them by a short-circuit equivalent.

    2. Replacing all capacitors by a short-circuit equivalent.

    3. Removing all elements bypassed by short-circuit equivalent.

    4. Redrawing the network.

    BJT Transistor Model

  • 22

  • 23

  • 24

    Example

  • 25

    Example

  • 26

    Example

  • 27

    The re transistor model

    • Common Base PNP Configuration

  • 28

    Common Base PNP Configuration

    • Transistor is replaced by a single diode between E & B, and control current source between B & C

    • Collector current Ic is controlled by the level of emitter current Ie.

    • For the ac response the diode can be replaced by its equivalent ac resistance.

  • 29

    Common Base PNP Configuration

    • The ac resistance of a diode can be determined by the equation;

    Where ID is the dc current through the diode at the Q-point.

    EI

    mVre

    26

  • 30

    • Input impedance is relatively small and output impedance quite high.

    • range from a few Ω to max 50 Ω

    • Typical values are in the M Ω

    CBi reZ

    CBZo

    Common Base PNP Configuration

  • 31

    The common-base characteristics

  • 32

    Voltage Gain

    re

    RA

    re

    R

    rI

    RI

    V

    VA

    rI

    ZI

    ZIV

    RI

    RI

    RIV

    LV

    L

    ee

    Le

    i

    OV

    ee

    ie

    iii

    Le

    LC

    Loo

    :gain voltage

    : ageinput volt

    )(

    : tageoutput vol

  • 33

    Current Gain

    1

    i

    e

    e

    e

    C

    i

    oi

    A

    I

    I

    I

    I

    I

    IA

    • The fact that the polarity of the Vo as determined by the current IC is the same as defined by figure below.

    • It reveals that Vo and Vi are in phase for the common-base configuration.

  • 34

    Common Base PNP Configuration

    Approximate model for a common-base npn transistor configuration

  • 35

    Example 1: For a common-base configuration in figure

    below with IE=4mA, =0.98 and AC signal of 2mV is

    applied between the base and emitter terminal:

    a) Determine the Zi b) Calculate Av if RL=0.56k

    c) Find Zo and Ai

    e

    b b

    c

    ec I αI

    IcI

    e

    common-base re equivalent cct

    re

  • 36

    Solution:

    5.6m4

    m26

    I

    26mr Za)

    Eei

    43.845.6

    )k56.0(98.0

    r

    RA b)

    e

    Lv

    98.0I

    IA

    Ω Zc)

    i

    oi

    o

  • 37

    Example 2: For a common-base configuration in previous

    example with Ie=0.5mA, =0.98 and AC signal of 10mV is

    applied, determine:

    a) Zi b) Vo if RL=1.2k c) Av d)Ai e) Ib

    20m5.0

    m10

    I

    V Za)

    :Solution

    e

    ii

    88mV5

    (1.2k)0.98(0.5m)

    RIRIV b) LeLco

    8.58m10

    m588

    V

    VA c)

    i

    ov

    98.0A d) i

    A10

    )98.01(m5.0

    )1(m5.0

    I-I

    I-II e)

    ee

    ceb

  • Common Emitter NPN Configuration

    • Base and emitter are input terminal

    • Collector and emitter are output terminals

    38

  • Common Emitter NPN Configuration

    • Substitute re equivalent circuit

    • Current through diode

    39

    bc II

    bbe

    bbbce

    III

    IIIII

    )1(

  • 40

    • Input impedance

    ei

    ei

    b

    ebi

    eb

    eei

    b

    be

    i

    ii

    rZ

    rZ

    I

    rIZ

    rI

    rIV

    I

    V

    I

    VZ

    ; 1an greater thusually

    )1(

    )1( that so

    )1(

    :ageinput volt

    :impedanceinput

  • 41

    The output graph

  • 42

    bI

    c

    e

    bIi=I

    b

    re model for the C-E transistor configuration

    re

    ro

    e

    0AbI

    c

    e

    bI

    i=I

    b

    re

    ro

    e

    Vs=0V

    = 0A

    oZ

    impedance)high cct,(open ΩZ

    the thusignored is r if

    rZ

    o

    o

    oo

    Output impedance Zo

  • 43

    e

    LV

    eb

    Lb

    i

    oV

    eb

    iii

    Lb

    Lco

    Loo

    r

    RA

    rI

    RI

    V

    VA

    rI

    ZIV

    RI

    RIV

    RIV

    that so

    :ageinput volt

    : tageoutput vol

    i

    b

    b

    b

    C

    i

    oi

    A

    I

    I

    I

    I

    I

    IA

    Voltage Gain Current Gain

  • re model for common-emitter

    44

  • 45

    Example 3: Given =120 and IE(dc)=3.2mA for a common-

    emitter configuration with ro= , determine:

    a) Zi b)Av if a load of 2 k is applied c) Ai with the 2 k load

    975)125.8(120rZ

    125.8m2.3

    m26

    I

    26mr a)

    ei

    Ee

    :Solution

    15.246125.8

    k2

    r

    Rb)A

    e

    Lv

    120I

    IA c)

    i

    oi

  • 46

    Example 4: Using the npn common-emitter configuration,

    determine the following if =80, IE(dc)=2 mA and ro=40 k

    a) Zi b) Ai if RL =1.2k c) Av if RL=1.2k

    k04.1)13(80rZ

    13m2

    m26

    I

    26mr a)

    ei

    Ee

    :Solution

    bI

    cbIi=I

    b

    re model for the C-E transistor configuration

    re

    ro

    e

    RL

    Io

  • 47

    67.77

    )80(k2.1k40

    k40

    Rr

    r

    I

    Rr

    )I(r

    A

    Rr

    )I(rI

    I

    I

    I

    IiAb)

    (cont)Solution

    Lo

    o

    b

    Lo

    bo

    i

    Lo

    boL

    b

    L

    i

    o

    6.8913

    k40k2.1

    r

    rRvAc)

    e

    oL

  • 48

    Common Collector Configuration

    • For the CC configuration, the model defined for the common-emitter configuration is normally applied rather than defining a model for the common-collector configuration.