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Transient beam loading at injection
Ivan Karpov and Philippe Baudrenghien
Power requirements at injection
The full-detuning scheme has no advantage during machine filling (previous meeting)
→ The half-detuning scheme needs to be used
Required peak power in steady-state situation 𝑃HD =𝑉cav መ𝐼b,rf
8, but is it
the same during injection process?
→ Evaluation of power including details of LLRF system is necessary
Peak beam rf current
2
Cavity-beam-generator model developed for FCC
3
rf cavity
Load
Circulator
Generator
LLRF Σ
–
+
𝐼b,rf, rf component of
the beam current
𝑉ref, reference voltage
𝑉, cavity voltage
𝐼g, generator current
𝐼r, Reflected current
𝑉 𝑡 , 𝐼b,rf 𝑡 , 𝐼g 𝑡 , 𝐼r 𝑡 are time-varying complex phasors rotating with angular rf frequency 𝜔rf
𝑑𝑉 𝑡
𝑑𝑡= −𝑉 𝑡
1
𝜏− 𝑖Δ𝜔 + 𝜔rf 𝑅/𝑄 𝐼𝑔 𝑡 −
𝐼b,rf 𝑡
2
*J. Tückmantel, Cavity-Beam-Transmitter Interaction Formula Collection with Derivation, CERN-ATS-Note-2011-002, 2011
For given 𝐼g 𝑡 and 𝐼b,rf 𝑡 the cavity voltage can be found from*
Cavity filling time 𝜏 = 2𝑄L/𝜔rf, cavity detuning Δ𝜔 = 𝜔r − 𝜔rf, 𝑅/𝑄 = 45 Ω
→ How do we get 𝐼b,rf 𝑡 and 𝐼g 𝑡 ?
𝜖 = 𝑉ref − 𝑉, error signal
rf component of the beam current
4
The rf power chain (amplifier, circulator, etc.) has limited bandwidth
For power transient calculations, we are interested dynamics of the system for the first few turns after injection
→ 𝐼b,rf 𝑡 can be replaced by a stepwise function 𝑓(𝑡) with sampling rate 1/𝑡bb = 40 MHz (𝑡bb - bunch spacing), so
𝐼b,rf 𝑡 = −𝑖 መ𝐼b,rf 𝑓(𝑡)
→ Synchrotron motion can be neglected
Peak rf current መ𝐼b,rf =𝑒𝑁p𝐹b
𝑡bbBunch form factor 𝐹𝑏 = 2𝑒−
𝜔rf2 𝜎2
2 𝑁p - number of particles per bunch
Fourier transform
Generator current as output of LLRF module
5
Delay, 𝜏delay Gain, G
OTFB
AC coupling AC coupling
𝐼g 𝑡 𝜖 𝑡Σ+
+
First simplified model (analog direct rf feedback): 𝐼g 𝑡 = 𝐺 𝜅 𝑡 − 𝜏delay = 𝐺𝜖(𝑡 − 𝜏delay)
Correction signal Error signal
𝜅 𝑡
The direct feedback gain is defined by the loop stability 𝐺 = 2 𝑅/𝑄 𝜔rf𝜏delay−1
for 𝜏delay = 650 ns
For the finite gain cavity voltage will be lower than 𝑉ref
It improves longitudinal multi-bunch stability
Generator current as output of LLRF module
6
Delay, 𝜏delay Gain, G
OTFB
AC coupling AC coupling
𝐼g 𝑡 𝜖 𝑡Σ+
+
Model for analog and digital direct rf feedback:𝑑𝐼g 𝑡
𝑑𝑡=𝐼g 𝑡
𝑎d𝜏d+𝐺
𝜏d𝜅 𝑡 − 𝜏delay + 𝐺
𝑑𝜅 𝑡 − 𝜏delay
𝑑𝑡
Correction signal Error signal
𝜅 𝑡
In the LHC 𝑎d = 10, 𝜏d ≈2
𝜔rev=
𝑡rev
𝜋, for the revolution period 𝑡rev ≈ 88.9 μs
Frequency dependent gain
𝜔𝜔rev
1
𝑎d
1/𝜏d1/𝑎d𝜏d
With digital rf feedback error in cavity voltage can be reduced
Generator current as output of LLRF module
7
Delay, 𝜏delay Gain, G
OTFB
AC coupling AC coupling
𝐼g 𝑡 𝜖 𝑡Σ+
+
Model for one-turn delay feedback:
Correction signal Error signal
𝜅 𝑡
In the LHC 𝑎OTFB =15
16, 𝐾 = 10, 𝜏AC = 100 μs.
OTFB reduces transient beam loading and improves longitudinal multi-bunch stability
Frequency dependent gain
𝜔𝜔rev
1
𝑎d
1/𝜏d1/𝑎d𝜏d
𝑦 𝑡 = 𝑎OTFB𝑦 𝑡 − 𝑡rev + 𝐾 1 − 𝑎OTFB 𝑥(𝑡 − 𝑡rev + 𝜏delay)
Removes DC offset
from the signal
Model AC coupling: 𝑦 𝑡
𝑑𝑡= −
𝑦 𝑡
𝜏AC+
𝑑𝑥 𝑡
𝑑𝑡
𝑥
𝑦
𝑥𝑦
Results: analog DFB only (1/2)
8
Injection of 3 × 48 bunches with 𝐹𝑏 = 1 and 𝑁𝑝 = 2.3 × 1011; rf cavities are pre-detuned with Δ𝜔 = 2𝜋Δ𝑓
𝑉cav መ𝐼b,rf8
→ The requested power is below steady-state limit, but what happens with cavity voltage?
𝑃 𝑡 =1
2𝑅/𝑄 𝑄L 𝐼g 𝑡
2
*J. Tückmantel, Cavity-Beam-Transmitter Interaction Formula Collection with Derivation, CERN-ATS-Note-2011-002, 2011
Generator power*
Results: analog DFB only (2/2)
9
Injection of 3 × 48 bunches with 𝐹𝑏 = 1 and 𝑁𝑝 = 2.3 × 1011; rf cavities are pre-detuned with Δ𝜔 = 2𝜋Δ𝑓
𝑉cav
As expected for the finite gain, the voltage is lower than it is requested
→ This explains lower power consumption
Results: analog + digital DFB (1/2)
10
Injection of 3 × 48 bunches with 𝐹𝑏 = 1 and 𝑁𝑝 = 2.3 × 1011; rf cavities are pre-detuned with Δ𝜔 = 2𝜋Δ𝑓
There is a small overshoot in power after injection
Results: analog + digital DFB (2/2)
11
Injection of 3 × 48 bunches with 𝐹𝑏 = 1 and 𝑁𝑝 = 2.3 × 1011; rf cavities are pre-detuned with Δ𝜔 = 2𝜋Δ𝑓
Some modulation of the cavity voltage amplitude and more significant modulation of the cavity voltage phase
Results: analog + digital DFB + OTFB (1/2)
12
Injection of 3 × 48 bunches with 𝐹𝑏 = 1 and 𝑁𝑝 = 2.3 × 1011; rf cavities are pre-detuned with Δ𝜔 = 2𝜋Δ𝑓
There is a difference between first and the second turn after injection
Significant overshoot due to action of OTFB
First turn
Second turn
Results: analog + digital DFB + OTFB (2/2)
13
Injection of 3 × 48 bunches with 𝐹𝑏 = 1 and 𝑁𝑝 = 2.3 × 1011; rf cavities are pre-detuned with Δ𝜔 = 2𝜋Δ𝑓
First turn
Second turn
Better compensation of the cavity voltage at the second turn by OTFB costs significantly more power
Conclusions
• Detailed model of LLRF in the LHC was implemented in the time-domain beam-cavity-generator interaction equations.
• Preliminary results show that one turn delay feedback can cause problems during injection process resulting in large power transients. Possible solution would be reduction of OTFB gain during machine filling.
• Next steps:
• Comparison with MD data and BLonD model
14
Benchmarks
15
Expected impulse response constant of OTFB
𝜏OTFB =𝑡rev
1 − 𝑎OTFB≈ 1.5 ms
Long term evolution
16
17
18
19