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Towards minimizing read time for NAND Flash Globecom December 5 th , 2012 Borja Peleato, Rajiv Agarwal, John Cioffi (Stanford University) Minghai Qin, Paul H. Siegel (UCSD)

Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

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Page 1: Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

Towards minimizing read time for NAND Flash 

Towards minimizing read time for NAND Flash 

GlobecomDecember 5th, 2012

Borja Peleato, Rajiv Agarwal, John Cioffi (Stanford University) Minghai Qin, Paul H. Siegel (UCSD)

Page 2: Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

2Towards Minimizing Read Time for NAND FLash

Outline

• Introduction– NAND Flash write and read– Memory structure

• Problem: choosing read thresholds• Progressive read algorithm

– Estimating Min-BER threshold– Generating soft information

• Results

Page 3: Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

3Towards Minimizing Read Time for NAND FLash

N+ Source N+ DrainP-Type SiliconSubstrate

Floating gate

Control gate

Dielectric

Cell write procedure

Page 4: Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

4Towards Minimizing Read Time for NAND FLash

N+ Source N+ Drain

P-Type SiliconSubstrate

Floating gate

Control gate

Dielectric

Vt = 2V

Cell read procedure

+_Vt = 1V

Exact voltage unknown, read returns 1 if Vt < Vcell and 0 otherwise

Page 5: Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

5Towards Minimizing Read Time for NAND FLash

Memory structure

Page (~105 cells): write/read unit

Block (~128 pages): erase unit

• Main sources of noise:– Over-programming (and write noise)– Leakage– Inter-Cell-Interference (ICI)

Voltage

Nu

mb

er o

f ce

lls

Noise increases with cell scaling and wear

Page 6: Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

6Towards Minimizing Read Time for NAND FLash

Voltage

Nu

mb

er o

f ce

lls

• How do we choose read voltages when noise estimates are not available?

Problem

Page 7: Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

7Towards Minimizing Read Time for NAND FLash

If then hence

Solve for read threshold with min BER

1

21

1

11121 1,

t

Qt

Qtt

• Estimate Gaussian noise from noisy cdf samples

voltage

Pro

babi

lity

Progressive Read Algorithm

ynt

Qt

Qty

2

2

1

1

2

1

2

1)(

),(),( 222

211

t ())ˆ,ˆ(),ˆ,ˆ(),(),...,,( 22114411 ytyt

Page 8: Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

8Towards Minimizing Read Time for NAND FLash

Min BER threshold

• Minimum estimation error when reads are close to the means and spread out

voltage

Pro

babi

lity

2*ˆ

*ˆˆˆˆ

*)(*)ˆ(

),(,,,21121

t

yyt

etBERtBER

nnOeeee

t

Page 9: Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

9Towards Minimizing Read Time for NAND FLash

Soft information

• If hard decoding fails, re-use reads for soft decoding– For lower failure rate, reads clustered in uncertainty

region…

voltage

Pro

babi

lity

– For best combined noise estimation and decoding, two reads in each region

if means and variances are known

Page 10: Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

10Towards Minimizing Read Time for NAND FLash

S1 S2 S3

| Aµ - µ | / µ 1.2 ∙ 10-2 0.13 2.1 ∙ 10-2

| Aσ – σ | / σ 7.5 ∙ 10-2 0.59 0.13

| At* - t* | / t* 2.2 ∙ 10-2 4.2 ∙ 10-2 2.4 ∙10-2

| BER(At*) - BER(t*) | BER(t*) 1.6 ∙ 10-2 6.1 ∙10-2 1.9 ∙10-2

LDPC fail rate 1 0.14 7.4 ∙10-3

Genie LDPC fail rate 1 0 3 ∙ 10-4

S1 S2 S3

| Aµ - µ | / µ 1.2 ∙ 10-2 0.13

| Aσ – σ | / σ 7.5 ∙ 10-2 0.59

| At* - t* | / t* 2.2 ∙ 10-2 4.2 ∙ 10-2

| BER(At*) - BER(t*) | BER(t*) 1.6 ∙ 10-2 6.1 ∙10-2

LDPC fail rate 1 0.14

Genie LDPC fail rate 1 0

S1 S2 S3

| Aµ - µ | / µ 1.2 ∙ 10-2

| Aσ – σ | / σ 7.5 ∙ 10-2

| At* - t* | / t* 2.2 ∙ 10-2

| BER(At*) - BER(t*) | BER(t*) 1.6 ∙ 10-2

LDPC fail rate 1

Genie LDPC fail rate 1

S1 S2 S3

| Aµ - µ | / µ

| Aσ – σ | / σ

| At* - t* | / t*

| BER(At*) - BER(t*) | BER(t*)

LDPC fail rate

Genie LDPC fail rate

Result: ½ read operations

4 reads instead of 8 2x speed

Page 11: Towards minimizing read time for NAND Flash Towards minimizing read time for NAND Flash Globecom December 5 th, 2012 Borja Peleato, Rajiv Agarwal, John

11Towards Minimizing Read Time for NAND FLash

Thank you!