OP484AMQMLR Quad Operational Amplifier Total Dose Characterization

Test Report Lot D/C: 0843A

JPL Log Number: 2276

April 28th, 2010

D. Thorbourn

Electronic Parts Engineering Office

Radiation Testing and Failure Analysis Group

Jet Propulsion Laboratory

California Institute of Technology

Pasadena, CA

The Jet Propulsion Laboratory, California Institute of Technology, under a contract

with National Aeronautics and Space Administration carried out the research in this report.

Reference herein to any specific commercial product, process, or service by trade

name, trademark, manufacturer, or otherwise, does not constitute or imply its endorsement

by the United States Government or the Jet Propulsion Laboratory, California Institute of

Technology.

SUMMARY

Test results revealed good overall performance to 50 krad(Si). Parametric shifts that occurred in VOS, IOS, IB, and AOL (RL=2K) were consistent with post-rad limits specified by the manufacturer at VS=5V. Parameters characterized for their post irradiation response such as CMRR, PSRR, and output voltage, were found to operate within their pre-rad ranges to 50 krad(Si) .

Characterization of output sink current showed little change, although changes in source current approached 50% of initial values in the unbiased condition.

Device performance was favorable at all supply voltages tested, although slightly less degradation occurred at VS=+/-10V. More tolerance to radiation was observed in the biased test condition under the low dose rate conditions of this test.

The results of the radiation characterization described in this report, and in associated data files are presented so that compliance with application tolerances may be verified.

1.0 BACKGROUND

This report presents the results of Co60 radiation tests performed on the ADI OP484AMQMLR

5962R0051701VDA quad operational amplifier to characterize its low dose rate total ionizing dose

response. This test will also serve as the Radiation Lot Acceptance test (RLAT) for the lot date code

0843A.

This device was manufactured on Analog Devices’ bipolar process, and is rated to 100 krad at high dose rate. This report includes the results of a characterization performed by JPL at 0.01 rads(Si)/sec in order to determine if any low dose rate issues exist to 50 krad(Si) total dose.

2.0 TEST PROCEDURE AND SETUP

Except where noted, this test was performed according to the JPL Radiation Test Procedure

RTP_OP484_090901. The highlights of which are state below.

2.1 TEST SAMPLES

Eleven (11) parts from a flight lot of OP484’s were provided to JPL by LMSS for TID testing. Test samples are identified as follows:

Table I. Device ID

Qty Part Number Manufacturer D/C Source Package

11 5962R0051701VDA ADI 0843A LMSS 14P Flat Pack

2.2 TEST FACILITY

Total dose irradiations were performed at JPL’s LDR Co-60 facility which is compliant to MIL-STD-883, Method 1019.7. Devices were irradiated to NIST traceable dose rates. Exposures were performed at ambient laboratory temperature.

2.3 TEST GROUPS

Eleven (11) parts were divided into 2 groups for irradiation; Group 1 consisted of 5 devices in the biased condition, and group 2 consisted of 5 devices in the unbiased condition. The remaining devices were used for test development and control unit. Approximate cumulative test levels are shown in Table II below. Measurement times were varied somewhat to allow for convenient test times.

Table II. Details of test groups

Group

Qty

Bias

Dose Rate (reds(Si) /sec)

Serial #

Test Levels (krad)

1

5

LDR Biased

0.010

51 - 55

0, 5, 10, 20, 30, 50

2

5

LDR Unbiased

0.010

56, 57, 60, 61, 63

0, 5, 10, 20, 30, 50

2.4 ELECTRICAL TESTS

Electrical tests were performed using an Analog Devices LTS-2020 mixed signal test system. All test samples were treated in a manner which protects them against potential ESD issues.

2.5 TEST PARAMETERS AND LIMITS

Parametric tests were performed in accordance with manufacturer’s specifications per document 5962-00517 REV. E 06-06-27 to include subgroup1 and 4 test parameters for post-rad specs

unless stated otherwise. Test conditions, parameters, and limits are listed in Table III for tests performed at Vs=5V; where parameters specified for post radiation response include VOS, IOS, IB, AOL, and ISY. In addition, tests were performed at Vs=+3V, +/-10V and +/-15V. The results of which are included in the attached dataset. Other parameters characterized include output source and sink currents, VOH and VOL at various load currents, as well as slew rate, AOL, and PSRR at lower supply voltages with relative limits applied. Parametric measurements were maintained beyond these specified limits where measurement criteria were satisfied. Table III. Test parameters, conditions, and limits at VS=5V, VCM=2.5V

[1] Parameter not specified for post irradiation per manufacturer

[2] Additional non specified parameter with relative limits

[3] VOH & VOL values are shifted by VCM=1.5V

Limits

Parameter Description Note Min Max Units

'+SUPPLY CURRENT @ VCC=2.5V VEE=-2.5V 0 5.85 MA

'-SUPPLY CURRENT @ VCC=2.5V VEE=-2.5V -5.85 0 MA

VOS VCC=2.5V VEE=-2.5V -600 600 UV

IIO VCC=2.5V VEE=-2.5V -400 400 NA

IB+ VCC=2.5V VEE=-2.5V -3000 3000 NA

IB- VCC=2.5V VEE=-2.5V -3000 3000 NA

CMRR VCC=2.5V VEE=-2.5V 1 86 300 DB

PSRR VS=+/-2V > +/-2.5V -4 2 90 300 DB

AVS @ RL=10K VCC=+/-2.5 VO=+/-1.5V 25 2.00E+20 V/mV

AVS @ RL=2K VCC=+/-2.5 VO=+/-1.5V 1 50 2.00E+20 V/mV

VOH @ 250UA VCC=2.5V VEE=-2.5V 2,3 2.35 2.5 V

VOH @ 500UA VCC=2.5V VEE=-2.5V 2,3 2.35 2.5 V

VOH @ 1000UA VCC=2.5V VEE=-2.5V 1,3 2.35 2.5 V

VOL @ 250UA VCC=2.5V VEE=-2.5V 2,3 -2.5 -2.375 V

VOL @ 500UA VCC=2.5V VEE=-2.5V 2,3 -2.5 -2.375 V

VOL @ 1000UA VCC=2.5V VEE=-2.5V 1,3 -2.5 -2.375 V

ISC SOURCE VCC=2.5V VEE=-2.5V 2 -999 -6.5 MA

ISC SINK VCC=2.5V VEE=-2.5V 2 6.5 999 MA

SR+ VCC=2.5V VEE=-2.5V RL=2K 2 2.4 9999 V/US

SR- VCC=2.5V VEE=-2.5V RL=2K 2 -9999 -2.4 V/US

2.6 IRRADIATION BIAS CONDITIONS AND TEST FIXTURE

A single Irradiation bias fixture was used to accommodate 5 biased and 5 unbiased sites. Each

biased device was configured in accordance with Figure 1. Unbiased devices had all pins tied to

ground.

Figure 1. Irradiation bias circuit

3.0 DISCUSSION OF TEST RESULTS

Summary of Performance

Test results revealed good overall performance to 50 krad(Si). The radiation response of parameters such as VOS, IOS, IIO, IB and AOL operated within manufacturer specified post-rad test limits at Vs=5V. Change occurring in parameters such as IB and VOS was consistent with characteristics observed in previous radiation studies conducted on other lot date codes of this device [1] [2]. The response of parameters such as PSRR, CMRR, and AOL (at 2 kohm) was observed to operate within pre-rad limits to 50 krad(Si). Slew rate was not speced at Vs=5V, and final values negative slew were found to be slightly below the relative test limit of 2.4 V/uS at 50 krad(Si). A reduction of about 50% was observed in output source current at the final test level. More tolerance to radiation was observed in the biased test condition.

In addition to the information provided in this report, parameter and delta parameter data have been

collected along with the following statistics: mean, max, min, standard deviation, and 99/90 high and

low. The files associated with this test are available on JPL’s Rad Database

http://radcentral.jpl.nasa.gov/ or by request.

3.1 Mean Response

Following is a brief discussion of the mean parametric response of the OP484 at Vs=5V.

As shifts are greater in most cases at lower supply voltages, these results are a good reference (in most cases) of device performance at supply voltages from 3V to +/-15V.

Input Offset Voltage

Input offset voltage results were similar at the various supply voltages tested. The average response at Vs=5 V shows a rise in Input offset voltage occurring earlier in biased devices (above 5 krad(Si)), and appears to remain relatively flat at approximately 150 uV above 30 krad(Si) . Change in unbiased devices increase significantly above 15 krad(Si). The maximum value at 50 krad(Si) was 450 uV. This change is well within the post-rad limit of 600 uV.

Figure 2. Average Input offset voltage at Vs=+5V versus total dose

-50

0

50

100

150

200

250

300

350

400

0 10 20 30 40 50 60Ave

rage

Inp

ut

Off

set

Vo

ltag

e (

uV

)

Total Dose [krad(Si)]

OP484 Mean Input Offset Voltage vs. Total Dose

CH 1 Biased

CH 2 Biased

CH 3 Biased

CH 4 Biased

CH 1 Unbiased

CH 2 Unbiased

CH 3 Unbiased

CH 4 Unbiased

Input Offset Current

Slight changes occurred in input offset current which did not exceed 46 nA on a single chip. This change is orders of magnitude below the post-rad limit of 400 nA. Shown below is the average input offset current for the biased and unbiased test condition to 50 krad(Si) .

Figure 3. Average Input offset current at Vs=+5V versus total dose

Input Bias Current

The parameter response of IB remained within post-rad test limits for all device channels. The maximum value at 50 krad(Si) was approximately 1300 nA, which is well below the post-rad limit of 3000 nA. For Vs=5V and 15V, pre-rad limits were exceeded above 10 krad(Si) , compared with 20 krad(Si) at Vs=10V. A significant difference in performance was observed in channels 3 & 4, where values of IB were approximately twice as much as channels 1 & 2. This is observed on all devices tested, and is probably related to the way the 4 channels are implemented on the single chip. Degradation occurs earlier in unbiased devices where IB begins to exceed pre-rad test limits above 5 krad(Si) , and is more than twice the value of devices in the biased condition.

-35

-30

-25

-20

-15

-10

-5

0

5

10

0 10 20 30 40 50 60Ave

rage

Inp

ut

Off

set

Cu

rren

t (n

A)

Total Dose [krad(Si)]

OP484 Mean Input Offset Current vs. Total Dose

Series1

Series2

Series3

Series4

Series5

Series6

Series7

Series8

Figure 4. Average positive Input bias current at Vs=+5V versus total dose

Open Loop Gain

The mean response of open loop gain with RL=10K was above 2000 V/mV at 50 krad(Si) . AOL with RL=2K, which was not specified post-rad, yielded a minimum value of 112 V/mV for a single device at 50 krad(Si) . The mean response of AOL with RL=2 kohms is shown below.

Figure 5. Average open loop gain at Vs=+5V versus total dose

0

200

400

600

800

1,000

0 10 20 30 40 50 60

Me

an In

pu

t B

ias

Cu

rre

nt+

(nA

)

Total Dose [krad(Si)]

OP484 Mean Positive Input Bias Current Vs. Total Dose

Series2

Series1

Series3

Series4

Series5

Series6

Series7

Series8

0

100

200

300

400

500

600

700

0 10 20 30 40 50 60

Me

an O

pe

n lo

op

Gai

n (V

/mV

)

Total Dose [krad(Si)]

OP484 Mean Open Loop Gain @ Rl=2K Vs. Total Dose

Series2

Series1

Series3

Series4

Series5

Series6

Series7

Series8

Output Current Source

Output source and sink current are non-specified parameters, but were included in this characterization. The relative lower limit applied was approximately half of initial values (-6.5 mA). The minimum value of output source current occurring at 50 krad(Si) was -5.5 mA in the unbiased condition.

Figure 6. Average output source current at Vs=+5V versus total dose

Output Current Sink

Change in sink current was much less than source current, and did not exceed 2 mA at 50 krad(Si) . Average values were above 17.5 mA for the biased and unbiased test condition at 50 krad(Si) as shown below.

-16

-14

-12

-10

-8

-6

-4

-2

0

0 10 20 30 40 50 60

Sou

rce

Cu

rre

nt

(Ma)

Total Dose [krad(Si)]

OP484 Mean Output Source CurrentVs. Total Dose in Unbiased Devices

Series2

Series1

Series3

Series4

Series5

Series6

Series7

Series8

Figure 7. Average output sink current at Vs=+5V versus total dose

Slew rate

This parameter was not speced at Vs=+5V, therefore the minimum relative (based on the value at Vs=+/-15V) test limit of 2.4 V/uS was applied. The response of average slew rate remained above the minimum this relative limit to 50 krad(Si), however, the minimum measured value of negative slew rate of 2.36 V/uS was slightly below this limit for a single device.

Figure 8. Average positive slew rate at Vs=+5V versus total dose

17.5

18.0

18.5

19.0

19.5

20.0

20.5

0 10 20 30 40 50 60

Sin

k C

urr

en

t (M

a)

Total Dose [krad(Si)]

OP484 Mean Output Sink CurrentVs. Total Dose in Unbiased Devices

Series2

Series1

Series3

Series4

Series5

Series6

Series7

Series8

3.5

3.6

3.7

3.8

3.9

4.0

4.1

4.2

4.3

0 10 20 30 40 50 60

Po

siti

ve S

lew

Rat

e (V

/uS)

Total Dose [krad(Si)]

OP484 Mean Positive Slew Rate Vs. Total Dose in Unbiased Devices

Series2

Series1

Series3

Series4

Series5

Series6

Series7

Series8

3.4 Summary of Test Results

Tests results at Vs=5V are summarized below for all parameters to include mean, delta, as well as 99/90 statistics where applicable. Highlighted results indicate total dose levels where pre-rad thresholds were exceeded. This does not indicate parametric failure, but rather identifies post-rad response relative to pre-rad limits. Test results at other supply voltages are available in the attached dataset.

Table VI-I. Summary of test results at Vs=5V versus total dose in the biased test condition

Table VI-II. Summary of test results at Vs=5V versus total dose in the biased test condition

Table VII-I. Summary of test results at Vs=5V versus total dose in the unbiased test condition

Table VII-II. Summary of test results at Vs=5V versus total dose in the unbiased test condition

3.5 Bias Condition Dependence

Moderate differences in radiation response were noted at each supply voltage. Results were observed to be better in the biased test condition, although degradation occurring in unbiased devices do not exceed post-rad limits for Vs=5V. Performance at Vs=3V, 10V, and 15V also remained within these limits. In general, more degradation occurs at lower supply voltages; for example, the lower relative test limit of slew rate is exceeded at 15 krad(Si) for Vs=3V, and 30 krad(Si) at 5V in the unbiased condition. Source current falls below 50% of initial values at 25 krad(Si) for Vs=3V, and 30 krad(Si) for Vs=5V in the unbiased condition.

3.4 ELDRS Discussion

As HDR testing was not within the scope of this report, an ELDRS evaluation is not included. However, based on a comparison with HDR biased performance provided by the manufacturer to 100 krad(Si), the LDR test results were found to be in compliance for all parameters tested at Vs=5V. This comparison suggests that no degradation beyond manufacturers HDR limits exist at low dose rate to 50 krad(Si) .

4.0 CONCLUSION

Parametric shifts that occurred in VOS, IOS, IB, and AOL (RL=2K) were consistent with post limits specified by the manufacturer at VS=5V.

Pre-rad specified parameters such as CMRR, PSRR, and VOL remained within pre-rad limits to 50 krad(Si).

Characterization of output sink and source showed moderate changes and the latter approached 50% of initial values in the unbiased condition. The performance of slew rate at Vs=+5V was also characterized to be slightly below 2.4 V/uS for negative transitions at 50 krad(Si) .

Device performance was favorably at all supply voltages tested, although slightly less degradation was observed at VS=+/-10V. Values of IB were observed to be significantly lower in channels 1 and 2, yet all channels remained within post-rad test limits. More tolerance to radiation was observed in the biased test condition.

The results described in this report, and in associated data files are provided in order that the

radiation response of OP484AMQMLR lot date code 0843A may be verified to comply with

application tolerances.

In addition to the information provided in this report, parameter and delta parameter data have been

collected along with the following statistics: mean, max, min, standard deviation, and 99/90 high and

low. The files associated with this test are available on JPL’s Rad Database

http://radcentral.jpl.nasa.gov/ or by request.

References

[1] Leif Scheick and Bernard Rax, “Test Report for Total Dose Radiation Tests of the OP484

Operational Amplifier Log Number: 2417”, December 4, 2006.

[2] Bernard Rax, Dennis Thorbourn, Rosa Rivas, and Allan Johnston, “Test Report for Total Dose

Radiation Tests of the OP484 Operational Amplifier Log Number: 2147”, Date Code 0123

August 7, 2006.