TL052, TL052A, TL052Y ENHANCED-JFET …docs-europe.electrocomponents.com/webdocs/0026/0900766b80026a28.pdfenhanced-jfet precision dual operational amplifiers ... texas instruments

TL052, TL052A, TL052Y ENHANCED-JFET PRECISION

DUAL OPERATIONAL AMPLIFIERS SLOS036C – JUNE 1988 – REVISED AUGUST 1994

Copyright 1994, Texas Instruments Incorporated

2–1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443

• Maximum Offset Voltage800 µV (TL052A)

• High Slew Rat e . . . 17.8 V/µs Typ at 25 °C• Low Total Harmonic Distortion

0.003% Typ at R L = 2 kΩ• Low Noise Voltage . . . 19 nV/√Hz

• Low Input Bias Current s . . . 30 pA Typ

description

The TL052 and TL052A dual operationalamplifiers incorporate well-matched, high-voltageJFET and bipolar transistors in a monolithicintegrated circuit. These devices offer thesignificant advantages of Texas Instruments newenhanced-JFET process. This process affords notonly low initial offset voltage due to the on-chipzener trim capability but also stable offset voltageover time and temperature. In comparison,traditional JFET processes are plagued bysignificant offset voltage drift.

This new enhanced process still maintains thetraditional JFET advantages of fast slew rates andlow input bias and offset currents. Theseadvantages coupled with low noise and lowharmonic distortion make the TL052 well suited fornew state-of-the-art designs as well as existingdesign upgrades. The TL052 has been designedto be functionally compatible, as well as pincompatible, with the TL072 and TL082. Two offsetvoltage grades are available: TL052 (1.5 mV max)and TL052A (800 µV max).

A variety of available packaging options includessmall-outline and chip-carrier versions for high-density system applications.

The C-suffix devices are characterized foroperation from 0°C to 70°C. The I-suffix devicesare characterized for operation from –40°C to85°C. The M-suffix devices are characterized foroperation over the full military temperature rangeof –55°C to 125°C.

symbol (each amplifier)

+

–IN –

IN +OUT

1

2

3

4

8

7

6

5

1OUT1IN–1IN+

VCC –

VCC+2OUT2IN–2IN+

D, JG, OR P PACKAGE(TOP VIEW)

3 2 1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

NC2OUTNC2IN –NC

NC1IN –

NC1IN+

NC

FK PACKAGE(TOP VIEW)

NC

1OU

TN

C2I

N +

NC

NC

NC

NC

NC – No internal connection

CC

+V

CC

–V

0–900 –600 –300 0 300 600 900

5

10

15

20

VIO – Input Offset Voltage – µV

Per

cent

age

of A

mpl

ifier

s –

%

TA = 25°C

DISTRIBUTION OF TL052AINPUT OFFSET VOLTAGE

403 Amplifiers Tested From 1 Wafer LotVCC± = ±15 V

P Package

PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.

TL052, TL052A, TL052YENHANCED-JFET PRECISIONDUAL OPERATIONAL AMPLIFIERS

SLOS036C – JUNE 1988 – REVISED AUGUST 1994

2–2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443

AVAILABLE OPTIONS

TV

PACKAGED DEVICESCHIP

TAVIOmaxAT 25°C

SMALLOUTLINE

CHIPCARRIER

CERAMICDIP

PLASTICDIP

CHIPFORM

(Y)AT 25 C OUTLINE(D)

CARRIER(FK)

DIP(JG)

DIP(P)

(Y)

0°C to 800 µV TL052ACD— —

TL052ACPTL052Y70°C

µ1500 µV TL052CD — — TL052CP TL052Y

–40°C to 800 µV TL052AID— —

TL052AIP—85°C

µ1500 µV TL052ID — — TL052IP —

–55°C to 800 µV TL052AMD TL052AMFK TL052AMJG TL052AMP—

125°Cµ

1500 µV TL052MD TL052MFK TL052MJG TL052MP—

The D packages are available taped and reeled. Add R suffix to device type (e.g., TL052CDR).

equivalent schematic (each amplifier)

R9IN–

IN+

Q2

Q3Q7

VCC+

Q14

Q6

R4

Q8

Q10

R7

Q11

R6

C1

Q9Q5

Q4

R5

R1

Q1

JF1 JF2

Q13

Q16

R8

JF3Q15

Q17

OUT

VCC–

R2 R3

Q12

R10 D2

D1

COMPONENT COUNT†

Transistors 34

Resistors 19

Diodes 3

Capacitors 2† Includes both amplifiers and all

bias and trim circuitry



2–3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443

TL052Y chip information

This chip, when properly assembled, displays characteristics similar to the TL052. Thermal compression orultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductiveepoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 TYPICAL

BONDING PADS: 4 × 4 MINIMUM

TJmax = 150°C

TOLERANCES ARE ±10%.

ALL DIMENSIONS ARE IN MILS.

PIN (4) IS INTERNALLY CONNECTEDTO BACKSIDE OF CHIP.

+

–1OUT

1IN+

1IN–

VCC+(8)

(6)

(3)

(2)

(5)

(1)

–

+(7) 2IN+

2IN–2OUT

(4)

VCC–

(1) (2)(3)

(4)

(5)(6)(7)

(8)

66

72




absolute maximum ratings over operating free-air temperatur range (unless otherwise noted) †

Supply voltage, VCC+ (see Note 1) 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply voltage, VCC– (see Note 1) –18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage (see Note 2) ±30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, VI (any input, see Notes 1 and 3) ±15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II (each input) ± 1 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO (each output) ± 80 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current into VCC+ 160 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current out of VCC– 160 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 4) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M suffix –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package 260°C. . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC–.2. Differential voltages are at IN+ with respect to IN–.3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less.4. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum

dissipation rating is not exceeded.

DISSIPATION RATING TABLE

PACKAGETA ≤ 25°C

POWER RATINGDERATING FACTORABOVE TA = 25°C

TA = 70°CPOWER RATING



D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW

FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW

JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW

P 1000 mW 8.0 mW/°C 640 mW 520 mW 200 mW

recommended operating conditionsC SUFFIX I SUFFIX M SUFFIX

UNITMIN MAX MIN MAX MIN MAX

UNIT

Supply voltage, VCC± ±5 ±15 ±5 ±15 ±5 ±15 V

Common-mode input voltage VICVCC± = ±5 V –1 4 –1 4 –1 4

VCommon-mode input voltage, VICVCC± = ±15 V –11 11 –11 11 –11 11

V

Operating free-air temperature, TA 0 70 –40 85 –55 125 °C




electrical characteristics at specified free-air temperature

PARAMETER TEST CONDITIONS †

TL052C, TL052AC

UNITPARAMETER TEST CONDITIONS TA† VCC± = ±5 V VCC± = ±15 V UNITAMIN TYP MAX MIN TYP MAX

V I ff l

V 0

TL052C25°C 0.73 3.5 0.65 1.5

VVIO Input offset voltage

V 0

TL052CFull range 4.5 2.5

mVVIO Input offset voltage

V 0 TL052AC25°C 0.51 2.8 0.4 0.8

mV

VO = 0,VIC = 0,

TL052ACFull range 3.8 1.8

T t ffi i t f

VIC = 0,RS = 50 Ω TL052C

25°C to8 8

V/°CαVIO

Temperature coefficient ofinput offset voltage

RS = 50 Ω TL052C25 C to70°C 8 8

µV/°CαVIO input offset voltage(see Note 5) TL052AC

25°C to8 6 25

µV/°C(see Note 5) TL052AC

25 C to70°C 8 6 25

Input offset voltagelong-term drift (see Note 6)

VO = 0, VIC = 0,RS = 50 Ω 25°C 0.04 0.04 µV/mo

IIO Input offset currentVO = 0, VIC = 0, 25°C 4 100 5 100 pA

IIO Input offset currentVO 0, VIC 0,See Figure 5 70°C 0.02 1 0.025 1 nA

IIB Input bias currentVO = 0, VIC = 0, 25°C 20 200 30 200 pA

IIB Input bias currentVO 0, VIC 0,See Figure 5 70°C 0.15 4 0.2 4 nA

VICRCommon-mode input

25°C–1to4

–2.3to

5.6

–11to11

–12.3to

15.6VVICR

Common mode inputvoltage range

Full range–1to4

–11to11

V

VM i i i k

RL = 10 kΩ25°C 3 4.2 13 13.9

VVOMMaximum positive peak

RL = 10 kΩFull range 3 13

VVOM+Maximum positive peakoutput voltage swing

RL = 2 kΩ25°C 2.5 3.8 11.5 12.7

V

RL = 2 kΩFull range 2.5 11.5

VM i i k

RL = 10 kΩ25°C –2.5 –3.5 –12 –13.2

VVOMMaximum negative peak

RL = 10 kΩFull range –2.5 –12

VVOM–Maximum negative peakoutput voltage swing

RL = 2 kΩ25°C –2.3 –3.2 –11 –12

V


ALarge signal differential

R 2 kΩ S N 7

25°C 25 59 50 105

V/ VAVDLarge-signal differentialvoltage amplification

RL = 2 kΩ, See Note 7 0°C 30 65 60 129 V/mVVD voltage amplification L70°C 20 46 30 85

ri Input resistance 25°C 1012 1012 Ω

ci Input capacitance 25°C 10 12 pF

CMRRCommon mode V V min

25°C 65 85 75 93

dBCMRRCommon-moderejection ratio

VIC = VICRmin,VO = 0, R S = 50 Ω 0°C 65 84 75 92 dB

rejection ratio VO = 0, RS = 50 Ω70°C 65 84 75 91

† Full range is 0°C to 70°C.NOTES: 5. This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing

on testing or nontesting of other parameters.6. Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated

to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.7. For VCC± = ±5 V, VO = ±2.3 V; at VCC± = ±15 V, VO = ±10 V.




electrical characteristics at specified free-air temperature (continued)


TL052C, TL052AC


kSupply voltage rejection

V 0 R 50 Ω

25°C 75 99 75 99

dBkSVRSupply-voltage rejectionratio (∆VCC ± /∆VIO)

VO = 0, RS = 50 Ω 0°C 75 98 75 98 dBSVR ratio (∆VCC ± /∆VIO) O S70°C 75 97 75 97

ISupply current

V 0 N l d

25°C 4.6 5.6 4.8 5.6

AICCSupply current(two amplifiers)

VO = 0, No load 0°C 4.7 6.4 4.8 6.4 mACC (two amplifiers) O70°C 4.4 6.4 4.6 6.4

VO1/VO2 Crosstalk attenuation AVD = 100 25°C 120 120 dB

operating characteristics at specified free-air temperature


TL052C, TL052AC

UNITPARAMETER TEST CONDITIONS TA† VCC± = ± 5 V VCC± = ± 15 V UNITAMIN TYP MAX MIN TYP MAX

SR + Slew rate at unity gainR 2 kΩ C 100 F

25°C 17.8 9 20.7

V/

SR + Slew rate at unity gainRL = 2 kΩ, CL = 100 pF, Full range 8

V/µs

SR –Negative slew rate

RL 2 kΩ, CL 100 pF,See Figure 1 and Note 8 25°C 15.4 9 17.8

V/µs

SR –Negative slew rateat unity gain Full range 8

Ri i

V 10 V

25°C 55 56

tr Rise time

V 10 V

0°C 54 55r

V 10 V

70°C 63 63ns

F ll i

VI(PP) = ±10 mV,R 2 kΩ

25°C 55 57ns

tf Fall time

( )RL = 2 kΩ,CL = 100 pF

0°C 54 56f CL = 100 pF,See Figures 1 and 2 70°C 62 64

O h f

See Figures 1 and 225°C 24% 19%

Overshoot factor 0°C 24% 19%

70°C 24% 19%

VnEquivalent input noise

R 20 Ω

f = 10 Hz 25°C 71 71nV/√HzVn

Equivalent input noisevoltage (see Note 5) RS = 20 Ω,

S Fi 3f = 1 kHz 25°C 19 19 30

nV/√Hz

VN(PP)Peak-to-peak equivalent input noise current

SSee Figure 3 f = 10 Hz to

10 kHz25°C 4 4 µV

InEquivalent input noise current

f = 1 kHz 25°C 0.01 0.01 pA/√Hz

THD Total harmonic distortionRS = 1 kΩ,f = 1 kHz,

RL = 2 kΩ,See Note 9

25°C 0.003% 0.003%

B U i i b d id hV 10 mV R 2 kΩ

25°C 3 3

MHB1 Unity-gain bandwidthVI = 10 mV,CL = 25 pF,

RL = 2 kΩ,See Figure 4

0°C 3.2 3.2 MHz1 y gCL = 25 pF, See Figure 4

70°C 2.6 2.7

Phase margin at unity V 10 mV R 2 kΩ25°C 60° 63°

φmPhase margin at unitygain

VI = 10 mV,CL = 25 pF,


0°C 59° 63°φm gain CL = 25 pF, See Figure 470°C 60° 63°

† Full range is 0°C to 70°C.NOTES: 5. This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing

on testing or nontesting of other parameters.8. For VCC± = ±5 V, VI(PP) = ±1 V; for VCC± = ±15 V, VI(PP) = ±5 V.9. For VCC± = ±5 V, VO(RMS) = 1 V; for VCC± = ±15 V, VO(RMS) = 6 V.






TL052I, TL052AI


V I ff l

V 0

TL052I25°C 0.73 3.5 0.65 1.5


V 0

TL052IFull range 5.3 3.3


VO = 0 TL052AI25°C 0.51 2.8 0.4 0.8

mV

VO = 0,VIC = 0,

TL052AIFull range 4.6 2.6

αVIOTemperature coefficient

VIC = 0,RS = 50 Ω

TL052I25°C to85°C 7 6

µV/°CαVIOTemperature coefficient(see Note 5)

TL052AI25°C to85°C 6 6 25

µV/°C

Input offset voltagelong-term drift (see Note 6)

VO = 0, VIC = 0,RS = 50 Ω 25°C 0.04 0.04 µV/mo


IIO Input offset currentVO 0, VIC 0,See Figure 5 85°C 0.06 10 0.07 10 nA


IIB Input bias currentVO 0, VIC 0,See Figure 5 85°C 0.6 20 0.7 20 nA


25°C–1to4

–2.3to

5.6

–11to11

–12.3to

15.6VVICR

Common mode inputvoltage range

Full range–1to4

–11to11

V

VM i i i k

RL = 10 kΩ25°C 3 4.2 13 13.9



VVOM+Maximum positive peakoutput voltage swing

RL = 2 kΩ25°C 2.5 3.8 11.5 12.7

V


VM i i k

RL = 10 kΩ25°C –2.5 –3.5 –12 –13.2



VVOM–Maximum negative peakoutput voltage swing

RL = 2 kΩ25°C –2.3 –3.2 –11 –12

V



R 2 kΩ S N 7

25°C 25 59 50 105


RL = 2 kΩ, See Note 7 –40°C 30 74 60 145 V/mVVD voltage amplification L85°C 20 43 30 76



CMRRCommon mode V V min

25°C 65 85 75 93


VIC = VICRmin,VO = 0, R S = 50 Ω –40°C 65 83 75 90 dB

rejection ratio VO = 0, RS = 50 Ω85°C 65 84 75 93

† Full range is –40°C to 85°C.NOTES: 5. This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing

on testing or nontesting of other parameters6. Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated

to TA = 25 °C using the Arrhenius equation and assuming an activation energy of 0.96 eV.7. At VCC± = ± 5 V, VO = ± 2.3 V; at VCC± = ±15 V, VO = ±10 V.




electrical characteristics at specified free-air temperature (continued)


TL052I, TL052AI



V 0 R 50 Ω

25°C 75 99 75 99

dBkSVRSupply-voltage rejectionratio (∆VCC± /∆VIO)

VO = 0, RS = 50 Ω –40°C 75 98 75 98 dBSVR ratio (∆VCC± /∆VIO) O S85°C 75 99 75 99

ISupply current

V 0 N l d

25°C 4.6 5.6 4.8 5.6


VO = 0, No load –40°C 4.5 6.4 4.7 6.4 mACC (two amplifiers) O85°C 4.4 6.4 4.6 6.4




TL052I, TL052AI


SR + Slew rate at unity gainR 2 kΩ C 100 F

25°C 17.8 9 20.7

V/

SR + Slew rate at unity gainRL = 2 kΩ, CL = 100 pF, Full range 8

V/µs

SR –Negative slew rate at

RL 2 kΩ, CL 100 pF,See Figure 1 and Note 8 25°C 15.4 9 17.8

V/µs

SR –Negative slew rate atunity gain Full range 8

Ri i

V 10 V

25°C 55 56

tr Rise time

V 10 V

–40°C 52 53r

V 10 V

85°C 64 65ns

F ll iVI(PP) = ±10 mV, 25°C 55 57

ns

tf Fall timeVI(PP) = ±10 mV,RL = 2 kΩ, CL = 100 pF,S Fi d

–40°C 51 53f L , L pSee Figures 1 and 2 85°C 64 65

O h f

25°C 24% 19%

Overshoot factor –40°C 24% 19%

85°C 24% 19%


R 20 Ω

f = 10 Hz 25°C 71 71Vn


S Fi 3f = 1 kHz 25°C 19 19 30



10 kHz25°C 4 4 µV

InEquivalent input noisecurrent

f = 1 kHz 25°C 0.01 0.01 pA/√Hz



25°C 0.003% 0.003%


25°C 3 3



–40°C 3.5 3.6 MHz1 y gCL = 25 pF, See Figure 4

85°C 2.5 2.6



VI = 10 mV,CL = 25 pF,


–40°C 58° 61°φm gain CL = 25 pF, See Figure 485°C 60° 63°

† Full range is –40°C to 85°C.NOTES: 5. This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing







TL052M, TL052AM


V I ff l

V 0

TL052M25°C 0.73 3.5 0.65 1.5


V 0

TL052MFull range 6.5 4.5


VO = 0 TL052AM25°C 0.51 2.8 0.4 0.8

mV

VO = 0,VIC = 0

TL052AMFull range 5.8 3.8

T ffi i

VIC = 0,RS = 50 Ω TL052M

25°C to10 9

V/°CαVIOTemperature coefficient

RS = 50 Ω TL052M 125°C 10 9µV/°CαVIO of input offset voltage

TL052AM25°C to125°C 9 8

µV/°C

Input offset voltage long-term drift (see Note 6)

VO = 0, VIC = 0,RS = 50 Ω 25°C 0.04 0.04 µV/mo


IIO Input offset current O , IC ,See Figure 5 125°C 1 20 2 20 nA


IIB Input bias current O , IC ,See Figure 5 125°C 10 50 20 50 nA


25°C–1to4

–2.3to

5.6

–11to11

–12.3to

15.6VVICR

pvoltage range

Full range–1to4

–11to11

V

VM i i i k

RL = 10 kΩ25°C 3 4.2 13 13.9



VVOM+p p

output voltage swingRL = 2 kΩ

25°C 2.5 3.8 11.5 12.7V


VM i i k

RL = 10 kΩ25°C –2.5 –3.5 –12 –13.2



VVOM–g p

output voltage swingRL = 2 kΩ

25°C –2.3 –3.2 –11 –12V



R 2 kΩ S N 7

25°C 25 59 50 105


RL = 2 kΩ, See Note 7 –55°C 30 76 60 149 V/mVVD voltage amplification L125°C 10 32 15 49



CMRRCommon mode

VIC = VICRmin, 25°C 65 85 75 93


VIC VICRmin,VO = 0,R 0

–55°C 65 83 75 92 dBrejection ratio O

RS = 50 Ω 125°C 65 84 75 94


V 0 R 50 Ω25°C 75 99 75 99

dBkSVRSupply-voltage rejectionratio (∆VCC± /∆VIO)

VO = 0, RS = 50 Ω –55°C 75 98 75 98 dBSVR ratio (∆VCC± /∆VIO) O S125°C 75 100 75 100

ISupply current

V 0 N l d

25°C 4.6 5.6 4.8 5.6


VO = 0, No load –55°C 4.4 6.4 4.5 6.4 mACC (two amplifiers) O125°C 4.2 6.4 4.4 6.4


† Full range is – 55°C to 125°C.NOTES: 6. Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150°C extrapolated

to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.7. For VCC± = ± 5 V, VO = ± 2.3 V; at VCC± = ±15 V, VO = ±10 V.






TL052M, TL052AM


SR +Positive slew rate

R 2 kΩ25°C 17.8 9 20.7

V/

SR +Positive slew rateat unity gain RL = 2 kΩ,

CL = 100 pFFull range 8

V/µs

SR –Negative slew rate

CL = 100 pF,See Figure 1 and Note 8 25°C 15.4 9 17.8

V/µs

SR –Negative slew rateat unity gain

See Figure 1 and Note 8Full range 8

Ri i

V 10 V

25°C 55 56

tr Rise time

V 10 V

–55°C 51 52r

V 10 V

125°C 68 68ns

F ll i

VI(PP) = ± 10 mV,R 2 kΩ

25°C 55 57ns

tf Fall time

( )RL = 2 kΩ,CL = 100 pF,

–55°C 51 52f CL = 100 pF,See Figures 1 and 2 125°C 68 69

O h f

See Figures 1 and 225°C 24% 19%

Overshoot factor –55°C 25% 19%

125°C 25% 19%


R 20 Ω

f = 10 Hz 25°C 71 71nV/√HzVn


S Fi 3f = 1 kHz 25°C 19 19

nV/√Hz



10 kHz25°C 4 4 µV


f = 1 kHz 25°C 0.01 0.01 pA/√Hz



25°C 0.003% 0.003%


25°C 3 3



–55°C 3.6 3.7 MHz1 y gCL = 25 pF, See Figure 4

125°C 2.3 2.4



VI = 10 mV,CL = 25 pF,


–55°C 57° 61°φm gain CL = 25 pF, See Figure 4125°C 60° 63°

† Full range is – 55°C to 125°C.NOTES: 5. This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearing






PARAMETER TEST CONDITIONS T

TL052Y

UNITPARAMETER TEST CONDITIONS TA VCC± = ± 5 V VCC± = ± 15 V UNITAMIN TYP MAX MIN TYP MAX

VIO Input offset voltage

V 0 V 0

25°C 0.73 3.5 0.65 1.5 mV

αVIOTemperature coefficient of

VO = 0 VIC = 025°C to

8 8 µV/°CαVIOTemperature coefficient ofinput offset voltage

VO = 0,RS = 50 Ω

VIC = 0,25 C to70°C 8 8 µV/°C

Input offset voltage long-termdrift

RS = 50 Ω

25°C 0.04 0.04 µV/mo

IIO Input offset currentVO = 0, VIC = 0,See Figure 5

25°C 4 100 5 100 pA

IIB Input bias currentVO = 0, VIC = 0,See Figure 5

25°C 20 200 30 200 pA

VICRCommon-mode input voltagerange

25°C–1to4

–2.3to

5.6

–11to11

–12.3to

15.6V

VOMMaximum positive peak RL = 10 kΩ

25°C3 4.2 13 13.9

V

VOM+Maximum positive peakoutput voltage swing RL = 2 kΩ

25°C2.5 3.8 11.5 12.7

V

VOMMaximum negative peak RL = 10 kΩ

25°C–2.5 –3.5 –12 –13.2

V

VOM–Maximum negative peakoutput voltage swing RL = 2 kΩ

25°C–2.3 –3.2 –11 –12

AVDLarge-signal differentialvoltage amplification

RL = 2 kΩ, See Note 7 25°C 25 59 50 105 V/mV



CMRR Common-mode rejection ratioVIC = VICRmin,VO = 0, RS = 50 Ω 25°C 65 85 75 93 dB

kSVRSupply-voltage rejection ratio(∆VCC± /∆VIO)

VO = 0, RS = 50 Ω 25°C 75 99 75 99 dB

ICC Supply current (two amplifiers) VO = 0, No load 25°C 4.6 5.6 4.8 5.6 mA


NOTE 7. For VCC± = ±5 V, VO = ±2.3 V; at VCC± = ±15 V, VO = ±10 V.





PARAMETER TEST CONDITIONS T

TL052Y

UNITPARAMETER TEST CONDITIONS TA VCC± = ±5 V VCC± = ±15 V UNITAMIN TYP MAX MIN TYP MAX

SR +Positive slew rate at unity gain RL = 2 kΩ, CL = 100 pF,

25°C 17.8 9 20.7

V/µs

SR –Negative slew rate atunity gain

RL 2 kΩ, CL 100 pF,See Figure 1 and Note 8

25°C 15.4 9 17.8

V/µs

tr Rise time VI(PP) = ±10 mV,25°C

55 56ns

tf Fall timeVI(PP) = ±10 mV,RL = 2 kΩ, CL = 100 pF,S Fi d

25°C 55 57ns

Overshoot factorL , L p

See Figures 1 and 2 24% 19%


R 20 Ω

f = 10 Hz 25°C 71 71nV/√HzVn


S Fi 3f = 1 kHz 25°C 19 19 30

nV/√Hz



10 kHz25°C 4 4 µV


f = 1 kHz 25°C 0.01 0.01 pA/√Hz



25°C 0.003% 0.003%

B1 Unity-gain bandwidthVI = 10 mV,CL = 25 pF,


25°C 3 3 MHz


VI = 10 mV,CL = 25 pF,


25°C 60° 63°

NOTES: 5. This parameter is tested on a sample basis. For other test requirements, please contact the factory. This statement has no bearingon testing or nontesting of other parameters.

8. For VCC± = ±5 V, VI(PP) = ±1 V; for VCC± = ±15 V, VI(PP) = ±5 V.9. For VCC± = ±5 V, VO(RMS) = 1 V; for VCC± = ±15 V, VO(RMS) = 6 V.

+–

VCC+

VCC–

Ground Shield

pA pA

Figure 5. Input-Bias and Offset-Current Test Circuit




PARAMETER MEASUREMENT INFORMATION

+

–

VCC+

VCC–

VIVO

Overshoot

10%

90%

tr

RL

NOTE A: CL includes fixture capacitance.

CL(see Note A)

Figure 1. Slew Rate, Rise/Fall Time, Figure 2. Rise Time and Overshootand Overshoot Test Circuit Waveform

VCC–

VCC+

+

–

VO

VO

VCC–

VCC+

+

–

RSRS

2 k Ω

RLCL(see Note A)

VI

10 k Ω

100 Ω


Figure 3. Noise-Voltage Test Circuit Figure 4. Unity-Gain Bandwidth andPhase-Margin Test Circuit

typical values

Typical values as presented in this data sheetrepresent the median (50% point) of deviceparametric performance.

input bias and offset current

At the picoamp-bias-current level typical of theTL052 and TL052A, accurate measurement of thebias current becomes difficult. Not only does thismeasurement require a picoammeter, but testsocket leakages can easily exceed the actualdevice bias currents. To accurately measure these small currents, Texas Instruments uses a two-step process.The socket leakage is measured using picoammeters with bias voltages applied but with no device in the socket.The device is then inserted in the socket, and a second test that measures both the socket leakage and thedevice input bias current is performed. The two measurements are then subtracted algebraically to determinethe bias current of the device.

noiseBecause of the increasing emphasis on low noise levels in many of today’s applications, the input noise voltagedensity is sample tested at f = 1 kHz. Texas Instruments also has additional noise testing capability to meetspecific application requirements. Please contact the factory for details.




TYPICAL CHARACTERISTICS

Table of GraphsFIGURE

VIO Input offset voltage Distribution 6

αVIO Temperature coefficient of input offset voltage Distribution 7

IIO Input offset current vs Free-air temperature 8

IIB Input bias currentvs Common-mode input voltage 9

IIB Input bias currentp g

vs Free-air temperature 8

VIC Common-mode input voltagevs Supply voltage 10

VIC Common-mode input voltagepp y g


VO Output voltage vs Differential input voltage 12, 13

VM i k

vs Supply voltage 14

VOMMaximum peak output

vs Supply voltagevs Frequency

1415, 16, 17

VOMp p

voltage swingq y

vs Output currentF i

, ,18, 1920 21vs Free-air temperature 20, 21

A Diff i l l lifi ivs Load resistance 22

AVD Differential voltage amplificationvs Load resistancevs Frequency

2223VD g p q y

vs Free-air temperature 24, 25

zo Output impedance vs Frequency 29

CMRR Common-mode rejection ratiovs Frequency 26, 27

CMRR Common-mode rejection ratioq y

vs Free-air temperature,

28

kSVR Supply-voltage rejection ratio vs Free-air temperature 30

I Sh i ivs Supply voltage 31

IOS Short-circuit output currentvs Supply voltagevs Time

3132OS p


ICC Supply currentvs Supply voltage 34

ICC Supply currentpp y g


SR Slew ratevs Load resistance 36, 37

SR Slew rate vs Free-air temperature,

38, 39

Overshoot factor vs Load capacitance 40

Vn Equivalent input noise voltage vs Frequency 41

THD Total harmonic distortion vs Frequency 42

B1 Unity-gain bandwidthvs Supply voltage 43

B1 Unity-gain bandwidthpp y g


Ph ivs Supply voltage 45

φm Phase marginvs Supply voltagevs Load capacitance

4546φm g p


Phase shift vs Frequency 23

Pulse responseSmall-signal 48

Pulse responseg

Large-signal 49




TYPICAL CHARACTERISTICS †

–1.50

Per

cent

age

of A

mpl

ifier

s –

%

VIO – Input Offset Voltage – mV–0.9 –0.3 0 0.3 0.9 1.5

0P

erce

ntag

e of

Am

plifi

ers

– %

αVIO – Temperature Coefficient – µV/°C

20

30

3

6

9

12

15

5

10

15

20100–10–20–30

DISTRIBUTION OF TL052INPUT OFFSET VOLTAGE

DISTRIBUTION OF TL052INPUT OFFSET VOLTAGE

TEMPERATURE COEFFICIENT

476 Amplifiers Tested From 1 Wafer LotVCC± = ±15 VTA = 25°CP Package

ÎÎÎÎÎÎÎÎÎÎÎ172 Amplifiers Tested From 2 Wafer LotsVCC± = ±15 VTA = 25°C to 125°CP Package

–1.2 –0.6 0.6 1.2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Outlier: One Unit at –34.6 µV/°C

Figure 6 Figure 7

–15–10

– In

put B

ias

Cur

rent

– n

A

VIC – Common-Mode Input Voltage – V

–5

0

5

10

–10 –5 0 5 10 15

TA = 25°CVCC± = ±15 V

INPUT BIAS CURRENT vs

COMMON-MODE INPUT VOLTAGE

INPUT BIAS CURRENT AND INPUT OFFSET CURRENT

vsFREE-AIR TEMPERATURE

IIO

IIB

TA – Free-Air Temperature – °C

– In

put B

ias

and

Offs

et C

urre

nts

– nA

0.00125

0.01

0.1

1

10

100

45 65 85 105 125

VCC± = ±15 VVO = 0VIC = 0

I IB

I IBan

d

I IO

Figure 8 Figure 9

† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.





–75–20


–15

–10

–5

0

5

10

15

20

–50 –25 0 25 50 75 100 125

COMMON-MODEINPUT VOLTAGE RANGE LIMITS


0–16

– C

omm

on-M

ode

Inpu

t Vol

tage

– V

| VCC± | – Supply Voltage – V

–12

–8

–4

0

4

8

12

16

2 4 6 8 10 12 14 16

TA = 25°C

COMMON-MODEINPUT VOLTAGE RANGE LIMITS

vsSUPPLY VOLTAGE

VIC

– C

omm

on-M

ode

Inpu

t Vol

tage

– V

VIC

ÎÎÎÎÎNegative Limit

ÎÎÎÎÎPositive Limit

ÎÎÎÎÎÎÎÎÎÎ

VCC± = ±15 V


Positive Limit


Negative Limit

Figure 10 Figure 11

– 400– 15

VID – Differential Input Voltage – µV

– 10

– 5

0

5

10

15

– 200 0 200 400

OUTPUT VOLTAGEvs

DIFFERENTIAL INPUT VOLTAGE

– 200– 5

– O

utpu

t Vol

tage

– V

– 4

– 3

– 2

– 1

0

1

2

3

4

5

– 100 0 100 200

ÎÎÎÎÎÎÎÎ

TA = 25°C

OUTPUT VOLTAGEvs

DIFFERENTIAL INPUT VOLTAGE

VID – Differential Input Voltage – µV

V O

– O

utpu

t Vol

tage

– V

V O

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÎÎÎÎRL = 600 ΩÎÎÎÎÎÎÎÎRL = 1 kΩÎÎÎÎRL = 2 kΩ

ÎÎÎÎRL = 10 kΩ

ÎÎÎÎÎÎÎÎ

RL = 600 Ω

ÎÎÎÎRL = 1 kΩ


RL = 10 kΩ

ÎÎÎÎÎÎÎÎÎÎVCC± = ±15 V


TA = 25°C

ÎÎÎÎÎRL = 2 kΩ


VCC± = ±5 V

Figure 12 Figure 13






010 k

f – Frequency – Hz

5

10

15

20

25

30

100 k 1 M 10 M–

Max

imum

Pea

k-to

-Pea

k O

utpu

t Vol

tage

– V RL = 2 kΩ

TA = 125°C

VCC± = ±5 V

TA = –55°C

VCC± = ±15 V

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs

FREQUENCY

0

–8

– M

axim

um P

eak

Out

put V

olta

ge –

V


–4

0

4

8

12

16

2 4 6 8 10 12 14 16

TA = 25°C VOM+

RL = 10 kΩ

RL = 2 kΩ

VOM–

RL = 2 kΩ

RL = 10 kΩ

MAXIMUM PEAK OUTPUT VOLTAGEvs

SUPPLY VOLTAGE

–12

–16

V OM

VO

(PP

)

Figure 14 Figure 15

– M

axim

um P

eak-

to-P

eak

Out

put V

olta

ge –

V

20

25

30

15

10

5

010 k 100 k


1 M 10 M


FREQUENCY

010 k


5

10

15

20

25

30

100 k 1 M 10 M


FREQUENCY

VO

(PP

) – M

axim

um P

eak-

to-P

eak

Out

put V

olta

ge –

VV O

(PP

)

ÁÁÁÁÁÁÁÁÁÁÁÁ

TA = 25°CRL = 2 kΩ


RL = 10 kΩTA = 25°C

ÁÁÁÁÁÁÁÁÁÁ

VCC± = ±15 V


VCC± = ±5 V


VCC± = ±5 V

ÁÁÁÁÁÁÁÁÁÁVCC± = ±15 V

Figure 16 Figure 17






00

2

4

6

8

10

12

14

16

10 20 30 40 50| IO | – Output Current – mA


OUTPUT CURRENT

00

– M

axim

um P

eak

Out

put V

olta

ge –

V

| IO | – Output Current – mA

1

2

3

4

5

4 12 16 208


OUTPUT CURRENT

|VO

M| –

Max

imum

Pea

k O

utpu

t Vol

tage

– V

|VO

M|

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

ÁÁÁÁÁÁ

VOM–

ÁÁÁÁÁÁ

VOM+

VCC± = ±5 VRL = 10 kΩTA = 25°C

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

VCC± = ±15 VRL = 10 kΩTA = 25°C

ÁÁÁÁÁÁ

VOM–


VOM+

2 6 10 14 18 5 15 25 35 50

Figure 18 Figure 19

–75–16

–50 –25 0 25 50 75 100 125

–12

–8

–4

0

4

8

12

16


RL = 10 kΩ

RL = 10 kΩ

RL = 2 kΩ

RL = 2 kΩ

VCC± = ±15 V


FREE-AIR TEMPERATURE

–75–5


–4

–3

–2

–1

0

1

2

3

4

5

–50 –25 0 25 50 75 100 125

RL = 2 kΩ

RL = 10 kΩ

RL = 10 kΩ

RL = 2 kΩ

VOM+

VCC± = ±5 V

MAXIMUM PEAK OUTPUT VOLTAGE vs


– M

axim

um P

eak

Out

put V

olta

ge –

VV

OM

– M

axim

um P

eak

Out

put V

olta

ge –

VV

OM

ÁÁÁÁÁÁ

VOM+

ÁÁÁÁÁÁ

VOM– ÁÁÁÁÁÁ

VOM–

Figure 20 Figure 21






10f – Frequency – Hz

10 M100 1 k 10 k 100 k 1 M0.1

1

101

104

102

103

VCC± = ±15 VRL = 2 kΩCL = 25 pFTA = 25°C

AVD

Phase Shift

0°

30°

60°

90°

120°

150°

180°

LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT

vsFREQUENCY

– D

iffer

entia

l Vol

tage

Am

plifi

catio

n –

V/m

V

0.40

RL – Load Resistance – k Ω

50

100

150

200

250

1 4 10 40 100

VO = ±1 VTA = 25°C

VCC± = ±15 V

LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION

vsLOAD RESISTANCE

VCC± = ±5 V

106

105

AV

D

– D

iffer

entia

l Vol

tage

Am

plifi

catio

n –

V/m

VA

VD

mφ

– P

hase

Shi

ft

Figure 22 Figure 23

–7510

125

1000

–50 –25 0 25 50 75 100

40

100

400 RL = 10 kΩ

RL = 2 kΩ




–7510


125

1000

–50 –25 0 25 50 75 100

40

100

400

RL = 2 kΩ

RL = 10 kΩ

VCC± = ±5 VVO = ±2.3 V




VCC± = ±15 VVO = 10 V

– D

iffer

entia

l Vol

tage

Am

plifi

catio

n –

V/m

VA

VD

– D

iffer

entia

l Vol

tage

Am

plifi

catio

n –

V/m

VA

VD

Figure 24 Figure 25






90

80

70

60

50

40

30

20

10

100

01 M100 k10 k1 k100 10 M


10

VCC± = ±15 VTA = 25°C

COMMON-MODE REJECTION RATIOvs

FREQUENCY

100

CM

RR

– C

omm

on-M

ode

Rej

ectio

n R

atio

– d

B


10 M

100

100 1 k 10 k 100 k 1 M

10

20

30

40

50

60

70

80

90VCC± = ±5 VTA = 25°C


FREQUENCY

CM

RR

– C

omm

on-M

ode

Rej

ectio

n R

atio

– d

B

Figure 26 Figure 27

1 k0.1

– O

utpu

t Im

peda

nce

–

1 M

100

10 k 100 k

1

10


AVD = 100

AVD = 10

AVD = 1

VCC± = ±15 VTA = 25°Cro (open loop) ≈ 250 Ω

OUTPUT IMPEDANCEvs

FREQUENCY

–7570


125

100

75

80

85

90

95

–50 –25 0 25 50 75 100

VIC = VICRMin

VCC± = ±5 V

VCC± = ±15 V



CM

RR

– C

omm

on-M

ode

Rej

ectio

n R

atio

– d

B

zo

Ω

0.4

4

40

Figure 28 Figure 29






0IO

S –

Sho

rt-C

ircui

t Out

put C

urre

nt –

mA


16

60

2 4 6 8 10 12 14

0

20

40

VO = 0TA = 25°C

VID = 100 mV

VID = –100 mV

SHORT-CIRCUIT OUTPUT CURRENTvs

SUPPLY VOLTAGE

–7590

kSV

R –

Sup

ply-

Vol

tage

Rej

ectio

n R

atio

– d

B

TA – Free-Air Temperature – °C125–50 –25 0 25 50 75 100

94

98

VCC± = ±5 V to ±15 V

SUPPLY-VOLTAGE REJECTION RATIOvs


–20

–40

–60

110

106

102

ÁÁÁÁÁÁ

kS

VR ÁÁ

ÁÁI O

S

Figure 30 Figure 31

VO = 0

0


40

20

–20

–40

60

–601007550250–25–50 125–75

VCC± = ±15 V

VCC± = ±5 V

VCC± = ±5 V

VCC± = ±15 V



0

t – Time – s

40

20

–20

–40

60

–60

5040302010 600

TA = 25°CVCC± = ±15 V

VID = 100 mV

VID = –100 mV


TIME

IOS

– S

hort

-Circ

uit O

utpu

t Cur

rent

– m

A

ÁÁÁÁÁÁ

I OS

IOS

– S

hort

-Circ

uit O

utpu

t Cur

rent

– m

A

ÁÁÁÁÁÁ

I OS


VID = 100 m V

ÎÎÎÎÎÎÎÎÎÎÎÎ

VID = –100 m V

Figure 32 Figure 33






00

5

2 4 6 8 10 12 14

1

2

3

4

–750

125

5

–50 –25 0 25 50 75 100

1

2

3

4TA = 25°CTA = –55°C

TA = 125°C

VO = 0No Load

VCC± = ±15 V

VCC± = ±5 V

16IC

C –

Sup

ply

Cur

rent

– m

A

ÁÁÁÁ

I CC

ICC

– S

uppl

y C

urre

nt –

mA

ÁÁÁÁ

I CC

SUPPLY CURRENTvs


SUPPLY CURRENTvs

SUPPLY VOLTAGE


VO = 0No Load

|VCC± | – Supply Voltage – V

Figure 34 Figure 35

1 4 10 4010410.40

RL – Load Resistance – k Ω

25

5

10

15

20

1000.4RL – Load Resistance – k Ω

SR+

SR–

SLEW RATEvs

LOAD RESISTANCE

SLEW RATEvs

LOAD RESISTANCE

SR–

SR+

40 100

CL = 100 pFTA = 25°CSee Figure 1

VCC± = ±5 VCL = 100 pFTA = 25°CSee Figure 1

VCC± = ±15 VSR

– S

lew

Rat

e –

V/µ

s

SR

– S

lew

Rat

e –

V/µ

s

0

25

5

10

15

20

Figure 36 Figure 37






SR+

SR–

SR–

SR+

–750


5

10

15

20

25

VCC± = ±5 VRL = 2 kΩCL = 100 pFSee Figure 1

SR

– S

lew

Rat

e –

V/

µs

–750


5

10

15

20

25

VCC± = ±15 VRL = 2 kΩCL = 100 pFSee Figure 1

SR

– S

lew

Rat

e –

V/

µs

SLEW RATEvs


SLEW RATEvs


Figure 38 Figure 39

ÎÎÎÎÎSee Figure 1

ÎÎÎÎÎÎÎÎÎÎÎÎ

TA = 25°CÎÎÎÎÎÎRL = 2 kΩ

ÎÎÎÎÎÎVI(PP) = ±10 mV


10

Vn

– E

quiv

alen

t Inp

ut N

oise

Vol

tage

–

10

20

30

40

50

70

100

100 1 k 10 k 100 k

EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

nV/

Hz


VCC± = ±15 VRS = 20 ΩTA = 25°CSee Figure 3

00

Ove

rsho

ot F

acto

r –

%

CL – Load Capacitance – pF

300

50

50 100 150 200 250

10

20

30

40

OVERSHOOT FACTORvs

LOAD CAPACITANCE


VCC± = ±15 V


VCC± = ±5 V

Figure 40 Figure 41







VI = 10 mVRL = 2 kΩCL = 25 pF

See Figure 4TA = 25°C

VO(RMS) = 6 V

0.001100


TH

D –

Tot

al H

arm

onic

Dis

tort

ion

– %

0.01

0.1

1

1 k 10 k 100 k

VCC± = ±15 VAVD = 1

TA = 25°C

TOTAL HARMONIC DISTORTIONvs

FREQUENCY

2.7

– U

nity

-Gai

n B

andw

idth

– M

Hz


16

3.2

4 6 8 10 12 14

2.8

2.9

3

3.1

UNITY-GAIN BANDWIDTHvs

SUPPLY VOLTAGE

B10.004

0.04

0.4

Figure 42 Figure 43

See Figure 4

VCC± = ±5 V to ±15 V

RL = 2 kΩCL = 25 pFTA = 25°C

VI = 10 mV

–750

TA – Free-Air Temperature – °C125

4

–50 –25 0 25 50 75 100

1

2

3

UNITY-GAIN BANDWIDTHvs


– U

nity

-Gai

n B

andw

idth

– M

Hz

B1

55°

m

16

65°

4 6 8 10 12 14

57°

59°

61°

63°

|VCC± | –Supply Voltage – V

PHASE MARGINvs

SUPPLY VOLTAGE

φ–

Pha

se M

argi

n

See Figure 4TA = 25°CCL = 25 pFRL = 2 kΩVI = 10 mV

Figure 44 Figure 45






–7555°

TA – Free-Air Temperature – °C125

65°

–50 –25 0 25 50 75 100

57°

59°

61°

63°VCC± = ±15 V

VCC± = ±5 V

PHASE MARGINvs


0CL – Load Capacitance – pF

100

70°

10 20 30 40 50 60 70 80 9045°

50°

55°

60°

65°

VI = 10 mVRL = 2 kΩTA = 25°CSee Figure 4


VCC± = ±15 VSee Note A

ÎÎÎÎVCC± = ±5 V

PHASE MARGINvs

LOAD CAPACITANCE

mφ

– P

hase

Mar

gin


CL = 25 pF

VI = 10 mVRL = 2 kΩ

See Figure 4

mφ

– P

hase

Mar

gin

NOTE A: Values of phase margin below a load capacitance of25 pF were estimated.

Figure 46 Figure 47

–8

t – Time – µs

6

8

0 1 2 3 4 5

–6

–4

–2

0

2

4

6

VOLTAGE-FOLLOWERLARGE-SIGNAL

PULSE RESPONSE

–16

– O

utpu

t Vol

tage

– m

V

t – Time – µs

1.2

16

0 0.2 0.4 0.6 0.8 1.0

–12

–8

–4

0

4

8

12

VOLTAGE-FOLLOWERSMALL-SIGNAL

PULSE RESPONSE

VO

– O

utpu

t Vol

tage

– V

VO

ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ

VCC± = ±15 VRL = 2 kΩCL = 100 pFTA = 25°CSee Figure 1


VCC± = ±15 VRL = 2 kΩCL = 100 pFTA = 25°CSee Figure 1

Figure 48 Figure 49





APPLICATION INFORMATION

output characteristics

All operating characteristics (except bandwidth and phase margin) are specified with 100-pF load capacitance.The TL052 and TL052A drive higher capacitive loads; however, as the load capacitance increases, the resultingresponse pole occurs at lower frequencies, thereby causing ringing, peaking, or even oscillation. The value ofthe load capacitance at which oscillation occurs varies with production lots. If an application appears to besensitive to oscillation due to load capacitance, adding a small resistance in series with the load should alleviatethe problem. Capacitive loads of 1000 pF and larger may be driven if enough resistance is added in series withthe output (see Figure 50).

(a) CL = 100 pF, R = 0 (b) CL = 300 pF, R = 0 (c) CL = 350 pF, R = 0

(d) CL = 1000 pF, R = 0 (e) CL 1000 pF, R = 50 Ω (f) CL = 1000 pF, R = 2 kΩ

Figure 50. Effect of Capacitive Loads

+

–

5 V

– 5 V

15 V

– 15 V

CL(see Note A)

2 kΩ

VOR


Figure 51. Test Circuit for Output Characteristics





input characteristics

The TL052 and TL052A are specified with a minimum and a maximum input voltage that, if exceeded at eitherinput, could cause the device to malfunction.

Because of the extremely high input impedance and resulting low bias current requirements, the TL052 andTL052A are well suited for low-level signal processing; however, leakage currents on printed-circuit boards andsockets can easily exceed bias current requirements and cause degradation in system performance. It is goodpractice to include guard rings around inputs (see Figure 52). These guards should be driven from alow-impedance source at the same voltage level as the common-mode input.

Unused amplifiers should be connected as grounded unity-gain followers to avoid possible oscillation.

+

–

+

–

+

–

VO

VO VO

VI

VI

(a) NONINVERTING AMPLIFIER (b) INVERTING AMPLIFIER (c) UNITY-GAIN AMPLIFIER

VI

Figure 52. Use of Guard Rings

noise performance

The noise specifications in operational amplifier circuits are greatly dependent on the current in the first-stagedifferential amplifier. The low input bias current requirements of the TL052 and TL052A result in a very lowcurrent noise. This feature makes the devices especially favorable over bipolar devices when using values ofcircuit impedance greater than 50 kΩ.





instrumentation amplifier with adjustable gain/null

The instrumentation amplifier in Figure 53 benefits greatly from the high input impedance and stable input offsetvoltage of the TL052A. Amplifiers U1A, U1B, and U2A form the actual instrumentation amplifier, while U2Bprovides offset null. Potentiometer R1 provides gain adjust. With R1 = 2 kΩ, the circuit gain equals 100, whilewith R1 = 200 kΩ, the circuit gain equals two. The following equation shows the instrumentation amplifier gainas a function of R1:

AV 1 R2 R3R1

Readjusting the offset null is necessary whenever the circuit gain is changed. If U2B is needed for anotherapplication, R7 can be terminated at ground. The low input offset voltage of the TL052A minimizes the dc errorof the circuit. For best matching, all resistors should be one percent tolerance. The matching between R4, R5,R6, and R7 controls the CMRR of this application.

The following equation shows the output voltages when the input voltage equals zero. This dc error can be nulledby adjusting the offset null potentiometer; however, any change in offset voltage over time or temperature alsocreates an error. To calculate the error from changes in offset, consider the three offset components in theequation as delta offsets rather than initial offsets. The improved stability of Texas Instruments enhanced JFETsminimizes the error resulting from change in input offset voltage with time. Assuming VI equals zero, VO canbe shown as a function of the offset voltage:

–VIO1R3R1 R7

R5 R7 1 R6

R4 R6

R41 R2

R1 VIO3

1 R6R4

VO VIO21 R3R1 R7

R5 R7 1 R6

R4 R2

R1R6R4

NOTE: U1 and U2 = TL052A; VCC± = ± 15 V.

100 kΩ

U2A

+

–

+

–

+

–

+

–

VI–U1A

R4

10 kΩ

R6

10 kΩ

200 kΩ

R2

10 MΩ

100 kΩ

10 turn

AV = 2 to 1002 kΩ R1

U1B

VI+

R5 R7U2B

0.1 µF

Offset Null

VCC–

82 kΩ

82 kΩ

VCC+R3

VO

10 kΩ 10 kΩ

10 MΩ

1 kΩ

Figure 53. Instrumentation Amplifier





analog thermometer

By combining a current source that does not vary over temperature with an instrumentation amplifier, a preciseanalog thermometer can be built (see Figure 54). Amplifier U1A and IC1 establish a constant current throughthe temperature-sensing diode D1. For this section of the circuit to operate correctly, the TL052 must use splitsupplies and R3 must be a metal-film resistor with a low temperature coefficient.

The temperature-sensitive voltage from the diode is compared to a temperature-stable voltage reference setby IC2. R4 should be adjusted to provide the correct output voltage when the diode is at a known temperature.Although this potentiometer resistance varies with temperature, the divider ratio of the potentiometer remainsconstant.

Amplifiers U1B, U2A, and U2B form the instrumentation amplifier that converts the difference between the diodeand reference voltage to a voltage proportional to the temperature. With switch S1 closed, the amplifier gainequals 5 and the output voltage is proportional to temperature in degrees Celsius. With S1 open, the amplifiergain is 9 and the output is proportional to temperature in degrees Fahrenheit. Every time that S1 is changed,R4 must be recalibrated. By setting S1 correctly, the output voltage equals 10 mV per degree (C or F).

+

–

+

–

+

–

IC1

C1

150 pFR1

100 kΩ U1A

R3 10 kΩ(see Note B)

D1(see Note A) +15 V

R2 100 kΩ

IC2R450 kΩ

U1B

R6

10 kΩ

R55 kΩ

R75 kΩ

S1(see Note C)

R8

10 kΩ

U2AR10

10 kΩR11

R9 R12

10 kΩ 10 kΩ

+15 V+

–

–15 V

10 kΩ

VO(see Note D)

U2B

NOTES: A. Temperature-sensing diode ≈ (–2 mV/°C)B. Metal-film resistor (low temperature coefficient)C. Switch open for °F and closed for °CD. VO α temperature; 10 mV/°C or 10 mV/°FE. U1, U2 = TL052. IC1, IC2 = LM385, LT1004, or LT1009 voltage reference

Figure 54. Analog Thermometer





phase meter

The phase meter in Figure 55 produces an output voltage of 10 mV per degree of phase delay between the twoinput signals VA and VB. The reference signal VA must be the same frequency as VB. The TLC3702 comparators(U1) convert these two input sine waves into ±5-V square waves. Then R1 and R4 provide level shifting priorto the SN74HC109 dual J-K flip flops.

Flip-flop U2B is connected as a toggle flip-flop and generates a square wave at half the frequency of VB.Flip-flop U2A also produces a square wave at half the input frequency. The pulse duration of U2A varies fromzero to half the period, where zero corresponds to zero phase delay between VA and VB and half the periodcorresponds to VB lagging VA by 360 degrees.

The output pulse from U2A causes the TLC4066 (U3) switch to charge the TL052 (U4) integrator capacitors C1and C2. As the phase delay approaches 360 degrees, the output of U4A approximates a square wave and U2Ahas an output of almost 2.5 V. U4B acts as a noninverting amplifier with a gain of 1.44 in order to scale the0- to 2.5-V integrator output to a 0- to 3.6-V output range.

R8 and R10 provide output gain and zero-level calibration. This circuit operates over a 100-Hz to 10-kHzfrequency range.

+

–+

–

+ 5 V

R2100 kΩ

R1

100 kΩU1A

VAS

1JC1

U2A

1KR

NC

U2B

2K

R3

VBU1B

R6

10 kΩ

R7

10 kΩ

+ 5 V

S2J

C1

R

NC100 kΩ

R4100 kΩ

U3

R5 C110 kΩ 0.016 µF

C20.016 µF

U4AU4B VO

R9

20 kΩ

R8

Gain50 kΩ

+ 5 V

R1010 kΩZero

– 5 V

NOTES: U1 = TLC3702; VCC± = ±5 VU2 = SN74HC109U3 = TLC4066U4, U5 = TL051; VCC± = ±5 V

Figure 55. Phase Meter





precision constant-current source over temperature

A precision current source benefits from the high input impedance and stability of Texas Instrumentsenhanced-JFET process. A low-current shunt regulator maintains 2.5 V between the inverting input and theoutput of the TL052. The negative feedback then forces 2.5 V across the current setting resistor R; therefore,the current to the load is simply 2.5 V divided by R.

Possible choices for the shunt regulator include the LT1004, LT1009, and LM385. If the regulator’s cathodeconnects to the operational amplifier output, this circuit sources load current. Similarly, if the cathode connectsto the inverting input, the circuit sinks current from the load. To minimize output current change with temperature,R should be a metal film resistor with a low temperature coefficient. Also, this circuit must be operated withsplit-voltage supplies.

+

–

+

–

150 pF

U2

+ 15 V

U1

– 15 V

R

100 kΩ

IO

LoadV = 0 to 10 V

(a) SOURCE CURRENT LOAD (b) SINK CURRENT LOAD

V = 0 to –10 VLoad

II

R

– 15 V

U1

+ 15 V

150 pF

U2

100 kΩ

NOTES: U1 = 1/2 TL052 U2 = LM385, LT1004, or LT1009 voltage reference

I = 2.5 VR

, R = Low temperature coefficient metal film resistor

Figure 56. Precision Constant-Current Source


IMPORTANT NOTICE

Texas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductorproduct or service without notice, and advises its customers to obtain the latest version of relevant informationto verify, before placing orders, that the information being relied on is current.

TI warrants performance of its semiconductor products and related software to the specifications applicable atthe time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques areutilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of eachdevice is not necessarily performed, except those mandated by government requirements.

Certain applications using semiconductor products may involve potential risks of death, personal injury, orsevere property or environmental damage (“Critical Applications”).

TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTEDTO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS.

Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TIproducts in such applications requires the written approval of an appropriate TI officer. Questions concerningpotential risk applications should be directed to TI through a local SC sales office.

In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards should be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance, customer product design, software performance, orinfringement of patents or services described herein. Nor does TI warrant or represent that any license, eitherexpress or implied, is granted under any patent right, copyright, mask work right, or other intellectual propertyright of TI covering or relating to any combination, machine, or process in which such semiconductor productsor services might be or are used.

Copyright 1995, Texas Instruments Incorporated

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