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Three-Dimensional Nanoscale Composition Mapping of Semiconductor Nanowires. D.E. Perea, J.E. Allen, S.J. May, B.W. Wessels, D.N. Seidman, L.J. Lauhon Nano Letters 6 (2). Feb 2006, p181-185. Joanne Yim EE C235/NSE C203. Nanowire composition. - PowerPoint PPT Presentation
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W 2007 April 11 EE C235/NSE C203 1
Three-Dimensional Nanoscale Composition Mapping of Semiconductor NanowiresD.E. Perea, J.E. Allen, S.J. May, B.W. Wessels, D.N. Seidman, L.J. Lauhon
Nano Letters 6(2). Feb 2006, p181-185.
Joanne YimEE C235/NSE C203
W 2007 April 11 EE C235/NSE C203 2
Nanowire composition
• Compositional flucuations especially critical at nanoscale– Dopants, catalyst, at interface, etc…
• Composition mapping tools:– SIMS = secondary ion mass spectroscopy: resolution
limited to >100nm– TEM = transmission electron microscopy (Energy
Dispersive X-ray Spectroscopy and Electron Energy Loss Spectroscopy): not for volumetric, low concentration.
• Averaged over electron beam spot size – Cross sectional Scanning Tunneling Microscopy (XSTM)
• Requires making a cross section• 2D
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LEAP Microscope• Local Electrode Atom Probe microscope• Sub-nanometer
resolution for atom tomography (imaging by sectioning)
• Create 3D mapping of composition
• First data published from commercial instrument in 2002
http://www.imago.com/imago/
3 easy payments of$999,999.95
(prices and participation may vary)
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• microtip sample: ~100nm radius of curvature in UHV chamber
• + bias sample, makes positive ions on sample tip– negatively pulsed local
electrode tip to induce positive ions to leave
• Position sensitive detector collects ions– Lighter mass -> travel faster– Mass-to-charge -> element– Relative composition using
counts– Straight line travel -> relative
positions
http://www.imago.com/imago/html/technology/technology.jsp
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Experimental
• Au seed-catalyzed InAs nanowire growth on GaAs(111)B by MOVPE– Epitaxial, vertical array of nanowires 140um
long, spaced 500um apart as defined by initial Au e-beam/liftoff
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(curvature is software artifact)
Cross section shows lines corresponding to growth planes (0001) ┴ growth direction
spacing of 0.35nm
Au atoms(98% In, As removed for picture)
SEM
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Catalyst-nanowire interface
10 nm dia X 1 nm thick slices
23x14x14 nm3
www.nsf.gov/mps/dmr/highlights/05highlights/imr/0449933.ppt
Interface width <0.5nm
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Summary
• 3D composition mapping can be achieved
• LEAP microscope sample geometry ideal for nanowire morphology
• Found Au catalyst incorporated along length of nanowire