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Thomas Jefferson National Accelerator Facility Page 1 IPR June 26-28, 2007 Tagger microscope R&D: silicon photomultiplier Tagger microscope R&D: silicon photomultiplier tests tests integrate pulses integrate pulses create spectrum create spectrum LED pulser (485 520 nm) dark box dark box Thermal controller 20º +100º C SiPM 1. 1. resolution resolution 2. 2. dark rate dark rate 3. 3. gain gain 4. 4. PDE PDE vs T, V vs T, V bias bias measurements taken of: measurements taken of: 1 mm 1 mm 2 4 mm 4 mm 2 attenuator charge collected (p.e.) events

Thomas Jefferson National Accelerator Facility Page 1 IPR June 26-28, 2007 Tagger microscope R&D: silicon photomultiplier tests integrate pulsesintegrate

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Page 1: Thomas Jefferson National Accelerator Facility Page 1 IPR June 26-28, 2007 Tagger microscope R&D: silicon photomultiplier tests integrate pulsesintegrate

Thomas Jefferson National Accelerator Facility

Page 1

IPR June 26-28, 2007

Tagger microscope R&D: silicon Tagger microscope R&D: silicon photomultiplier testsphotomultiplier tests

• integrate pulsesintegrate pulses• create spectrumcreate spectrum

LED pulser (485 520 nm)

dark boxdark box

Thermal controller20º +100º C

SiPM

1.1. resolutionresolution

2.2. dark ratedark rate

3.3. gaingain

4.4. PDEPDE

vs T, Vvs T, Vbiasbias

measurements taken of:measurements taken of:1 mm1 mm22 4 mm4 mm22

attenuator

charge collected (p.e.)

even

ts

Page 2: Thomas Jefferson National Accelerator Facility Page 1 IPR June 26-28, 2007 Tagger microscope R&D: silicon photomultiplier tests integrate pulsesintegrate

Thomas Jefferson National Accelerator Facility

Page 2

IPR June 26-28, 2007

Tagger microscope R&D: silicon Tagger microscope R&D: silicon photomultiplier testsphotomultiplier tests

0 10 20 300

0.2

0.4

0.6

0.8

1

x 10-10 Gain at Vbias=20V

Temperature (degC)

Gai

n (

Vs/

pix)

19 19.5 20 20.5 210

0.2

0.4

0.6

0.8

1

x 10-10

Bias Voltage (V)

Gai

n (

Vs/

pix

)

Gain at T=20degC

0 10 20 30 400

2

4

6

8

10

Temperature (degC)

Dar

k R

ate

(M

Hz)

Dark Rate at Vbias=20V

0 10 20 300

0.05

0.1

0.15

0.2

0.25

Photon Detection Efficiency (PDE) at Vbias=20V

Temperature (degC)

PD

E

Page 3: Thomas Jefferson National Accelerator Facility Page 1 IPR June 26-28, 2007 Tagger microscope R&D: silicon photomultiplier tests integrate pulsesintegrate

Thomas Jefferson National Accelerator Facility

Page 3

IPR June 26-28, 2007

Beam Line Instrumentation: Active CollimatorBeam Line Instrumentation: Active Collimator

Full-scale prototype: 8 sectors8 sectors 4 quadrants4 quadrants 200 200 m res.m res.

Beam test: Spring 2007Spring 2007 Hall B alcoveHall B alcove parasiticparasitic

Page 4: Thomas Jefferson National Accelerator Facility Page 1 IPR June 26-28, 2007 Tagger microscope R&D: silicon photomultiplier tests integrate pulsesintegrate

Thomas Jefferson National Accelerator Facility

Page 4

IPR June 26-28, 2007

Beam Line Instrumentation: Active CollimatorBeam Line Instrumentation: Active Collimator

Beam tests in Hall B (2007) collimated coherent collimated coherent beam beam photon beam spot ~5mm rmsphoton beam spot ~5mm rms fixed beam, scan the detector fixed beam, scan the detector

(horizontal direction only)(horizontal direction only)left sectorleft sector right sectorright sector

dete

ctor

cu

rren

t

horizontal scan position

Page 5: Thomas Jefferson National Accelerator Facility Page 1 IPR June 26-28, 2007 Tagger microscope R&D: silicon photomultiplier tests integrate pulsesintegrate

Thomas Jefferson National Accelerator Facility

Page 5

IPR June 26-28, 2007

Photon Source: Thin diamond R&D at Photon Source: Thin diamond R&D at CHESSCHESS

ccd X-ray cameraccd X-ray camera

diamond target ladderdiamond target ladder

4-circle diffraction goniometer4-circle diffraction goniometer

X-ray diffraction: assess crystal quality of diamond radiators for the coherent brems. source.

Result: large stress deformation observed in the 20 m diamond