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The NFET explained… in only a few confusing slides.

The NFET explained… in only a few confusing slides

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The NFET explained… in only a few confusing slides. Voltage-controlled Current Source. D rain. V ds. G ate. I DS. d. V gs. g. Vds > Vgs-Vt. S ource. s. l

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Page 1: The NFET explained…                               in only a few confusing slides

The NFET explained…

in only a few confusing slides.

Page 2: The NFET explained…                               in only a few confusing slides

Voltage-controlledCurrent Source

g

s

d

IDS = k ( ) ( Vgs - Vt )W

L

2

Drain

Source

GateIDS

Vgs

Vds

Vds > Vgs-Vt

Saturation Region:

(1 + Vds)

Early Effect

<< 1

Page 3: The NFET explained…                               in only a few confusing slides

Fig 4-13

Vt

Ids

Vgs

Drain

Source

GateIDS

Vgs

Vds

Vds > Vgs - Vt

Page 4: The NFET explained…                               in only a few confusing slides

Ohmic (Triode) Region:

IDS = k ( ) [ 2 (Vgs - Vt) Vds - Vds ]W

L

2

Vds < Vgs - Vt

Drain

Source

GateIDS

(Vds is small)

Page 5: The NFET explained…                               in only a few confusing slides

Vds

IdsFig 4-12

Drain

Source

GateIDS

dotted line iswhat the previousgraph plotted.

Page 6: The NFET explained…                               in only a few confusing slides

n+ n+

p-type

source = 0.0 v drain = 0.0 v

gate = 0.0 v

NFET - Operation

depletion regions

Page 7: The NFET explained…                               in only a few confusing slides

NFET - Operation

n+ n+

p-type

source = 0.0 v drain = 0.0 v

gate = 0.0 v

(subthreshold)

Page 8: The NFET explained…                               in only a few confusing slides

NFET - Operation

n+ n+

p-type

source = 0.0 v drain = 0.0 v

gate = 0.4 v

depletion region

(subthreshold)

Page 9: The NFET explained…                               in only a few confusing slides

NFET - Operation

n+ n+

p-type

source = 0.0 v drain = 0.0 v

gate = 0.6 v

(subthreshold)

Page 10: The NFET explained…                               in only a few confusing slides

NFET - Operation

n+ n+

p-type

source = 0.0 v drain = 0.0 v

gate = 0.75 v

inversion

A channel is formed….

Threshold Voltage, Vgs = 0.75 v

Page 11: The NFET explained…                               in only a few confusing slides

NFET - Operation

n+ n+

p-type

source = 0.0 v drain = 0.0 v

gate = 1.0 v

(above threshold)

Ids = 0.0 A

Page 12: The NFET explained…                               in only a few confusing slides

NFET - Operation

n+ n+

p-type

source = 0.0 v drain = .05 v

gate = 1.0 v

(above threshold)

Ids = 10 uA

Page 13: The NFET explained…                               in only a few confusing slides

NFET - Operation

n+ n+

p-type

source = 0.0 v drain = 0.1 v

gate = 1.0 v

(above threshold)

Ids = 20 uA

0.1v0.05v

Page 14: The NFET explained…                               in only a few confusing slides

NFET - Operation

n+ n+

p-type

source = 0.0 v drain = 0.2 v

gate = 1.0 v

(above threshold)

Ids = 40 uA

0.1v 0.2v.05v

Page 15: The NFET explained…                               in only a few confusing slides

NFET - Operation

n+ n+

p-type

source = 0.0 v drain = 0.25 v

gate = 1.0 v

(above threshold)

Ids = 59 uA

.05v 0.1v0.25v

Pinch-off

Vds > Vgs - Vt

Page 16: The NFET explained…                               in only a few confusing slides

NFET - Operation

n+ n+

p-type

source = 0.0 v drain = 0.3 v

gate = 1.0 v

(above threshold)

Ids = 60 uA

.05v 0.1v 0.25v

Vds > Vgs - Vt

Page 17: The NFET explained…                               in only a few confusing slides

NFET - Operation

n+ n+

p-type

source = 0.0 v drain = 0.4 v

gate = 1.0 v

(above threshold)

Ids = 61 uA

.05v 0.1v 0.25v

Vds > Vgs - Vt

= Vgs-Vt

Page 18: The NFET explained…                               in only a few confusing slides

NOTICE - thesaturation region isnow up where thecurrent is constant

for different VDS.

Vds

IdsFig 4-12

the arrows indicatewhat we showedin the previous figuresas Vds was increasedfor a fixed Vgs