The Advanced Low-dimensional Electronics & Nano-science Team

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Xufeng Kou

School of Information Science and TechnologyShanghaiTech University

TALENT

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We Need Heart! TALENT

Foundry• Intel M-5Y70 – 14 nm vs. SMIC – 40 nm• The smaller, the much more complex & expensive

• Success of Samsung Electronics (RAM, AMOLED, graphene) We need the heart to lead the new heart (spintronics) direction !

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Action Items TALENT

Grand Visions: Pursuit of novel semiconductors and new device concepts

based on nanoelectronics and spintronics. Design of low-power, non-volatile devices

compatible/complementary with next-generation spintronics state-of-art.

Development of device integrations into next-generation spintronics analog/digital networks.

Device Physics

Device Integration

CircuitDesign

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Ultra-high mobility

conduction channel

Van der Waals 2D Materials

Atomic-scale Lego block

2D-materials Skyscrapers

Multi-functional 2D Electronics TALENT

Tunable Bandgap

Tunneling Barrier

Electrode

Spin Divider

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TOPFET & Interconnect TALENT

Vds VG

GateFM

Non-FM

Al2O3

TI Channel

(magnetic) TI as spin injector, channel, and detector Energy-dissipationless Interconnect based on QAHE for

both spin and electron Chirality enables reprogrammable architecture

SOT-RAM1 transistor + 1 MTJ + 1

metal layerHigh density, Non-Volatile

Lower Power

Memory for Spintronics TALENT

6 transistors for one cellLow density, Volatile

STT-RAM1 transistor + 1 MTJHigher density, Non-

VolatileLow Power

Logic Function Block for Spintronics CPU

Spin-transfer RAM for Memory

Non-volatile SpintronicsLogic Circuit

Circuit Level Spintronics TALENT

Nano-Fabrication Center(OPTIONAL)

TALENT

Summary• Solid knowledge of semiconductors, device physics, and circuit

design.• 5+ years hand-on skills in semiconductor growth, fabrication, and

device characterization.• Well-established collaborations with first-class research group and

institute around the world.• Leadership, Persistence, Enthusiasm

• Bellwether of non-volatile, low-power spin-electronics research • SIST to be the birthplace of the next technology revolution

TOGETHER WE’LL GO FAR

TALENT