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DATA SHEET
Preliminary specificationSupersedes data of 2004 Feb 04
2004 May 05
INTEGRATED CIRCUITS
TDA8928JPower stage 2 x 10 or 1 x 20 Wclass-D audio amplifier
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
CONTENTS
1 FEATURES
2 APPLICATIONS
3 GENERAL DESCRIPTION
4 QUICK REFERENCE DATA
5 ORDERING INFORMATION
6 BLOCK DIAGRAM
7 PINNING
8 FUNCTIONAL DESCRIPTION
8.1 Power stage8.2 Protection8.2.1 Maximum temperature8.2.2 Maximum current
9 LIMITING VALUES
10 THERMAL CHARACTERISTICS
11 QUALITY SPECIFICATION
12 DC CHARACTERISTICS
13 AC CHARACTERISTICS
14 SWITCHING CHARACTERISTICS
15 TEST AND APPLICATION INFORMATION
15.1 SE application15.2 Package ground connection15.3 Output power15.4 Reference design15.4.1 Printed-circuit board15.4.2 Bill of materials15.5 Curves measured in reference design
16 PACKAGE OUTLINE
17 SOLDERING
17.1 Introduction to soldering through-hole mountpackages
17.2 Soldering by dipping or by solder wave17.3 Manual soldering17.4 Suitability of through-hole mount IC packages
for dipping and wave soldering methods
18 DATA SHEET STATUS
19 DEFINITIONS
20 DISCLAIMERS
2004 May 05 2
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
1 FEATURES
• High efficiency (> 90 %)
• Supply voltage from ±7.5 V to ±30 V
• Very low quiescent current
• High output power
• Diagnostic output
• Usable as a stereo Single-Ended (SE) amplifier
• Electrostatic discharge protection (pin to pin)
• No heatsink required.
2 APPLICATIONS
• Television sets
• Home-sound sets
• Multimedia systems
• All mains fed audio systems.
3 GENERAL DESCRIPTION
The TDA8928J is a switching power stage for a highefficiency class-D audio power amplifier system.
With this power stage a compact 2 × 10 W self oscillatingdigital amplifier system can be built, operating with highefficiency and very low dissipation. No heatsink isrequired. The system operates over a wide supply voltagerange from ±7.5 V up to ±30 V and consumes a very lowquiescent current.
4 QUICK REFERENCE DATA
5 ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
General
VP supply voltage ±7.5 ±12.5 ±30 V
Iq(tot) total quiescent current no load connected; VP = ±12.5 V − 25 45 mA
η efficiency Po = 10 W; RL = 8 Ω; VP = ±12.5 V − 90 − %
Stereo single-ended configuration
Po output power RL = 8 Ω; THD = 10 %; VP = ±12.5 V 9 10 − W
RL = 16 Ω; THD = 10 %; VP = ±12.5 V − 5 − W
TYPENUMBER
PACKAGE
NAME DESCRIPTION VERSION
TDA8928J DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm) SOT243-3
TDA8928ST RDBS17P plastic rectangular DIL-bent-SIL power package; 17 leads (rowspacing 2.54 mm)
SOT577-2
2004 May 05 3
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
6 BLOCK DIAGRAM
MGX377
handbook, full pagewidth
CONTROLAND
HANDSHAKE
DRIVERHIGH
TDA8928J
TEMPERATURE SENSORAND
CURRENT PROTECTION
DRIVERLOW
temp
current
4
7
VSS1
VSS1 VSS2
VDD2
6
1
2
9
8 10
VDD2 VDD1
13 5
CONTROLAND
HANDSHAKE
DRIVERHIGH
DRIVERLOW
14
11
12
17
16
3
15
EN1
DIAG
REL1
SW1
SW2
REL2
POWERUP
EN2
BOOT1
OUT1
STAB
OUT2
BOOT2
Fig.1 Block diagram.
2004 May 05 4
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
7 PINNING
SYMBOL PIN DESCRIPTION
SW1 1 digital switch input; channel 1
REL1 2 digital control output; channel 1
DIAG 3 digital open-drain output forovertemperature and overcurrentreport
EN1 4 digital enable input; channel 1
VDD1 5 positive power supply; channel 1
BOOT1 6 bootstrap capacitor; channel 1
OUT1 7 PWM output; channel 1
VSS1 8 negative power supply; channel 1
STAB 9 decoupling internal stabilizer forlogic supply
VSS2 10 negative power supply; channel 2
OUT2 11 PWM output; channel 2
BOOT2 12 bootstrap capacitor; channel 2
VDD2 13 positive power supply; channel 2
EN2 14 digital enable input; channel 2
POWERUP 15 enable input for switching oninternal reference sources
REL2 16 digital control output; channel 2
SW2 17 digital switch input; channel 2
handbook, halfpage
TDA8928J
MGX378
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
VSS1
VSS2
VDD2
VDD1
EN1
DIAG
REL1
SW1
SW2
REL2
POWERUP
EN2
BOOT1
OUT1
STAB
OUT2
BOOT2
Fig.2 Pin configuration.
2004 May 05 5
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
8 FUNCTIONAL DESCRIPTION
The TDA8928J is a two-channel audio power amplifiersystem using class-D technology.
The power stage TDA8928J is used for driving theloudspeaker load. It performs a level shift from thelow-power digital PWM signal, at logic levels, to ahigh-power PWM signal that switches between the mainsupply lines. A 2nd-order low-pass filter converts the PWMsignal into an analog audio signal across the loudspeaker.
8.1 Power stage
The power stage contains high-power DMOS switches,drivers, timing and handshaking between the powerswitches and some control logic (see Fig.1).
The following functions are available:
• Switch (pins SW1 and SW2): digital inputs; switchingfrom VSS to VSS + 12 V and driving the power DMOSswitches
• Release (pins REL1 and REL2): digital outputs;switching from VSS to VSS + 12 V; follow pin SW1 andSW2 with a small delay. Note: for self oscillatingapplications this pin is not used
• Power-up (pin POWERUP): must be connected to acontinuous supply voltage of at least VSS + 5 V withrespect to VSS
• Enable (pins EN1 and EN2): digital inputs; at a level ofVSS the power DMOS switches are open and the PWMoutputs are floating; at a level of VSS + 12 V the powerstage is operational
• Diagnostics (pin DIAG): digital open-drain output; pulleddown to VSS if the maximum temperature or maximumcurrent is exceeded.
8.2 Protection
Temperature and short-circuit protection sensors areincluded in the TDA8928J. The diagnostic output is pulleddown to VSS in the event that the maximum current ormaximum temperature is exceeded. The system shutsitself down when pin DIAG is connected to pins EN1 andEN2.
8.2.1 MAXIMUM TEMPERATURE
Pin DIAG becomes LOW if the junction temperature (Tj)exceeds 150 °C. Pin DIAG becomes HIGH again if Tj isdropped to approximately 130 °C, so there is a hysteresisof approximately 20 °C.
8.2.2 MAXIMUM CURRENT
When the loudspeaker terminals are short-circuited thiswill be detected by the current protection. Pin DIAGbecomes LOW if the output current exceeds the maximumoutput current of 2 A. Pin DIAG becomes HIGH again if theoutput current drops below 2 A. The output current islimited at the maximum current detection level when pinDIAG is connected to pins EN1 and EN2.
2004 May 05 6
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
9 LIMITING VALUESIn accordance with the Absolute Maximum Rate System (IEC 60134).
Notes
1. Human Body Model (HBM); Rs = 1500 Ω; C = 100 pF.
2. Machine Model (MM); Rs = 10 Ω; C = 200 pF; L = 0.75 µH.
10 THERMAL CHARACTERISTICS
11 QUALITY SPECIFICATION
In accordance with “SNW-FQ611” if this device is used as an audio amplifier.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VP supply voltage − ±30 V
VP(sc) supply voltage forshort-circuits across the load
− ±30 V
IORM repetitive peak current inoutput pins
− 2 A
Tstg storage temperature −55 +150 °CTamb ambient temperature −40 +85 °CTvj virtual junction temperature − 150 °CVesd(HBM) electrostatic discharge voltage
(HBM)note 1
all pins with respect to VDD (class 1a) −500 +500 V
all pins with respect to VSS (class 1a) −1500 +1500 V
all pins with respect to each other(class 1a)
−1500 +1500 V
Vesd(MM) electrostatic discharge voltage(MM)
note 2
all pins with respect to VDD (class B) −250 +250 V
all pins with respect to VSS (class B) −250 +250 V
all pins with respect to each other(class B)
−250 +250 V
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth(j-a) thermal resistance from junction to ambient in free air 40 K/W
Rth(j-c) thermal resistance from junction to case in free air 1.5 K/W
2004 May 05 7
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
12 DC CHARACTERISTICSVP = ±12.5 V; Tamb = 25 °C; measured in test diagram of Fig.4; unless otherwise specified.
Note
1. Temperature sensor or maximum current sensor activated.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
VP supply voltage ±7.5 ±12.5 ±30 V
Iq(tot) total quiescent current no load connected − 25 45 mA
outputs floating − 5 10 mA
Internal stabilizer logic supply (pin STAB)
VO(STAB) stabilizer output voltage referenced to VSS 11.7 13 14.3 V
Switch inputs (pins SW1 and SW2)
VIH HIGH-level input voltage referenced to VSS 10 − 15 V
VIL LOW-level input voltage referenced to VSS 0 − 2 V
Control outputs (pins REL1 and REL2)
VOH HIGH-level output voltage referenced to VSS 10 − 15 V
VOL LOW-level output voltage referenced to VSS 0 − 2 V
Diagnostic output (pin DIAG, open-drain)
VOL LOW-level output voltage IDIAG = 1 mA; note 1 0 − 1.0 V
ILO output leakage current no error condition − − 50 µA
Enable inputs (pins EN1 and EN2)
VIH HIGH-level input voltage referenced to VSS 9 − 15 V
VIL LOW-level input voltage referenced to VSS 0 5 − V
VEN(hys) hysteresis voltage − 4 − V
II(EN) input current − − 300 µA
Switching-on input (pin POWERUP)
VPOWERUP operating voltage referenced to VSS 5 − 12 V
II(POWERUP) input current VPOWERUP = 12 V − 100 170 µA
Temperature protection
Tdiag temperature activating diagnostic VDIAG = VDIAG(LOW) 150 − − °CThys hysteresis on temperature
diagnosticVDIAG = VDIAG(LOW) − 20 − °C
Current protection
IO(ocpl) overcurrent protection level − 2.1 − A
2004 May 05 8
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
13 AC CHARACTERISTICSVP = ±12.5 V; Tamb = 25 °C; unless otherwise specified.
Notes
1. VP = ±12.5 V; RL = 8 Ω; fi = 1 kHz; fosc = 310 kHz; Rs = 0.1 Ω (series resistance of filter coil); Tamb = 25 °C;measured in reference design (SE application) shown in Fig.5; unless otherwise specified.
2. Indirectly measured; based on Rds(on) measurement.
3. Total Harmonic Distortion (THD) is measured in a bandwidth of 22 Hz to 20 kHz (AES 17 brickwall filter). Whendistortion is measured using a low-order low-pass filter a significantly higher value will be found, due to the switchingfrequency outside the audio band. Measured using the typical application circuit, given in Fig.5.
4. Efficiency for power stage.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Single-ended application; note 1
Po output power RL = 8 ΩTHD = 0.5 % 7(2) 8 − W
THD = 10 % 9(2) 10 − W
RL = 16 ΩTHD = 0.5 % − 4 − W
THD = 10 % − 5 − W
THD total harmonic distortion Po = 1 W; note 3
fi = 1 kHz − 0.05 0.1 %
fi = 10 kHz − 0.2 − %
η efficiency endstage Po = 2 × 10 W; fi = 1 kHz; note 4 − 90 − %
2004 May 05 9
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
14 SWITCHING CHARACTERISTICSVP = ±12.5 V; Tamb = 25 °C; measured in Fig.4; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
PWM outputs (pins OUT1 and OUT2) ; see Fig.3
tr rise time − 30 − ns
tf fall time − 30 − ns
tblank blanking time − 70 − ns
tPD propagation delay from pin SW1 (SW2) topin OUT1 (OUT2)
− 200 − ns
tW(min) minimum pulse width − 220 270 ns
Rds(on) on-resistance of the outputtransistors
− 0.2 0.4 Ω
handbook, full pagewidth
MGW145
PWMoutput
(V)
VDD
VSS
0 V
tblanktftr
1/fosc
100 ns
VSTAB
VSS
VSW(V)
tPD
VSTAB
VSS
VREL(V)
Fig.3 Timing diagram PWM output, switch and release signals.
2004 May 05 10
2004M
ay05
Philips S
emiconductors
Pow
er stage 2 xaudio am
plifier
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15T
ES
T A
ND
AP
PLIC
AT
dbook, full pagewidth
Prelim
inary specification
10 or 1 x 20 W class-D
TD
A8928J
ION
INF
OR
MAT
ION
15 nF
MGX379
15 nF
2
1
BOOT1
2VP
OUT1
OUT2
VOUT2
VOUT1
BOOT2
V
V
11
12 kΩ
100nF
CONTROLAND
HANDSHAKE
DRIVERHIGH
TDA8928J
TEMPERATURE SENSORAND
CURRENT PROTECTION
DRIVERLOW
temp
current
4
7
VSS1
VSS1VREL2 VSS
VDD2
6
1
2
9
8 10
VDD2 VDD
13 5
CONTROLAND
HANDSHAKE
DRIVERHIGH
DRIVERLOW
14
11
12
17
16
3
15
EN1
DIAG
REL1
SW1
SW2
REL2
POWERUP
EN2
STAB
12 V
V
VSW2VREL1
V
VSW1VEN VDIAG
V
VSTAB
V
12 V0
12 V0
Fig.4 Test diagram.
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
15.1 SE application
For a SE application the application diagram as shown in Fig.5 can be used.
15.2 Package ground connection
The heatsink of the TDA8928J is connected internally to VSS.
15.3 Output power
The output power in SE self oscillating class-D applications can be estimated using the formula
The maximum current should not exceed 2 A.
Where:
RL = load impedance
Rs = series resistance of filter coil
Po(1%) = output power just at clipping.
The output power at THD = 10 %: Po(10%) = 1.25 × Po(1%).
15.4 Reference design
The reference design for a self oscillating class-D system for the TDA8928J is shown in Fig.5. The Printed-Circuit Board(PCB) layout is shown in Figs 6, 7 and 8. The bill of materials is given in Section 15.4.2.
Po(1%)
RL
RL Rds(on) Rs+ +( )------------------------------------------------ VP×2
2 RL×----------------------------------------------------------------------=
IO(max)
VP[ ]RL Rds(on) Rs+ +-------------------------------------------=
2004 May 05 12
2004M
ay05
Philips S
emiconductors
Prelim
inary specification
Pow
er stage 2 x 10 or 1 x 20 W class-D
audio amplifier
TD
A8928J
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mgx380
C241 µF
C251 µF
C34220 nF
C32470 nF
C1215 nF
LS18 Ω
LS28 Ω
R2222 Ω
C28100 nF
C2722 µF (100 V)
R195.6 Ω
C28560 pF
C29560 pF
C30560 pF
C31560 pF
VSSP
R30
39 kΩ
L3
33 µH
L4
33 µH
R31
39 kΩ
VSSP
VDDP
VDDP
VDDP
VDDP
C35220 nF
C33470 nF
C1315 nF
R2322 Ω
R215.6 Ω
VSSP
C1100 nF
+14.5 V
−14.5 V
CON1supply
123 C2
100 nF
C3470 µF(35 V)
L1
beadVDDP
C4470 µF(35 V)
8J.
13
C10220 nF
C8C9
220 nF22 µF
(100 V)
R260 Ω
220 nF
U1TDA8928J
17
6
9
12
11
5 13
8 10
2
15
3
4
14
16
17
C11220 nF
C38100 nF
S1power-ON
C37220 pF
STAB (U1,9)
STAB (U1,9)
DZ23.3 V
DZ136 V
R24
R16
1 kΩ
R100 Ω
C17
C15
100 nF
22 µF(100 V)
C1422 µF (100 V)
C16100 nF
R280 Ω
R290 Ω
R4
1 kΩ
R35
R343.9 kΩ
R210 kΩ
150 Ω
R8
3.9 kΩ
R6
220 kΩ
C22
2.2 nF
C42
2.2 nF
R32
100 Ω
C39
2.2 nF
C41
47 nF
R7
3.9 kΩ
C40
47 nFIn1
In2
C21
2.2 nF
R1315 kΩ
R91 kΩ
R333.9kΩ
R110 kΩ
R1415 kΩ
R252 kΩ
R1510 kΩ
R175.6 kΩ
R122 kΩ
R112 kΩ
Q2BC856
Q1BC848
0 Ω
C6470 µF(35 V)
VSSP
C7
470 µF(35 V)C5
VDD1 VDD2
VSS1 VSS2
VSSP
VSSP
VDDP
VDDP
VDDP
U2ALM393
12
8
43
U2BLM393
75
6
VSSP
VSSP
VSSP
J12 1
J32
1
J22 1
SW1OUT1
BOOT1
STAB
BOOT2
OUT2
REL1
POWERUP
DIAG
EN1
EN2
REL2
SW2
R5
220 kΩ
R3
1 kΩ
C20
2.2 nF
C19
2.2 nF
bead
L2VSSP
Fig.5 Single-ended self oscillating class-D system application diagram for TDA892
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
15.4.1 PRINTED-CIRCUIT BOARD
The printed-circuit board dimensions are 8.636 × 5.842 cm; single-sided copper of 35 µm; silk screen on both sides;79 holes; 94 components (32 resistors and 41 capacitors).
handbook, full pagewidth
MDB615Bottom silk
C37R15
C45C36R33R34
R3C19C50
C17
C40
C41R8
R16
IN2 IN1
Q1
C38R25
Q2C2
C12 C13VDD
R28
R14R13
R29
C11
C10R26
R24pin 1
R30 C28R11
R12R2R31
C25
C24C8
C9
C26C31
C26
C31
C26
C30
R9
R35R32
R1
GND22 V
OUT1
R23
C35
R22
C34
OUT2C1
C16
R4C22C21R6R10 R17 R7 R5
U2
++ − −
C37R15
R19R21R19R21
Fig.6 Printed-circuit board (bottom silk) layout for TDA8928J.
handbook, full pagewidth
MDB617Bottom copper
Fig.7 Printed-circuit board (bottom copper) layout for TDA8928J.
2004 May 05 14
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
mgx381Top silk
TDA8928ST
In1 In2
Con3
C32 C33
L2
L1
L4
L3
C4 C3DZ1
C14 C15
J3
C6
C7 C27
C5 U1J2
J1
Con2 Con1CO2 CO1
S1DZ2
power_on
GN
D
Out1 Out2
VD
D
VS
S
state of D art
VP typ +/- 12.5 V2 x 10 W in 8 Ω
single layer
demo PCB v2r4RL 1 2003
Fig.8 Printed-circuit board (top silk) layout for TDA8928ST.
15.4.2 BILL OF MATERIALS
COMPONENT DESCRIPTION TYPE COMMENTS
U1 TDA8928ST Philips Semiconductors,SOT577-2
U2 LM393AD National, SO8 alternatives: TIsemiconductors and Onsemiconductors
DZ1 36 V Zener diode BZX-79C36V, DO-35 used as jumper
DZ2 3.3 V Zener diode BZX-79C3V3, DO-35 used as jumper, optional
Q1 BC848 transistor NPN, SOT23
Q2 BC856 transistor PNP, SOT23
L1, L2 bead Murata BL01RN1-A62 used as jumper
L3, L4 33 µH coil Toko 11RHBP-330M ws totally shielded
S1 power-on switch PCB switch, SACME09-03290-01
optional
Con1 VSS, GND, VDD connector Augat 5KEV-03 optional
Con2, Con3 Out2, Out1 connector Augat 5KEV-02 optional
CO1, CO2 In1, In2 connector Cinch Farnell 152-396 optional
J1, J2, J3 wire Jumpers, D = 0.5 mm
Capacitors
C37 220 pF, 50 V SMD0805
C28, C29, C30,C31
560 pF, 100 V SMD0805 50 V is OK
2004 May 05 15
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
C19, C20, C21,C22, C39, C42
2.2 nF, 50 V SMD0805
C12, C13 15 nF, 50 V SMD0805
C40, C41 47 nF, 50 V SMD1206
C1, C2, C16, C17,C26, C38
100 nF, 50 V SMD0805
C8, C9, C10, C11,C34, C35
220 nF, 50 V SMD1206 C8 to C11 used as jumper
C32, C33 470 nF, 63 V MKT
C24, C25 1 µF, 16 V SMD1206 1206 due to supply range
C7, C14, C15,C27
22 µF, 100 V Panasonic NHG SeriesECA1JHG220
63 V is OK
C3, C4, C5, C6 470 µF, 35 V Panasonic M SeriesECA1VM471
C18, C23, C36 these capacitors have beenremoved
Resistors
R10, R26, R28,R29
0 Ω SMD1206 used as jumpers
R24 0 Ω SMD0805 short-circuited in a newprinted-circuit board layout
R19, R21 5.6 Ω, 0.25 W SMD1206 1206 due to dissipation
R22, R23 22 Ω, 1 W SMD2512 2512 due to dissipation
R35 150 Ω SMD1206 used as jumper
R32 100 Ω SMD1206 used as jumper
R9 1 kΩ SMD1206 used as jumper
R3, R4, R16 1 kΩ SMD0805
R11, R12 2 kΩ SMD1206 used as jumpers
R25 2 kΩ SMD0805
R7, R8, R33, R34 3.9 kΩ SMD0805
R17 5.6 kΩ SMD0805
R1, R2, R15 10 kΩ SMD0805
R13, R14 15 kΩ SMD0805
R30, R31 39 kΩ SMD0805
R5, R6 220 kΩ SMD0805
R18, R20, R27 these resistors have beenremoved
COMPONENT DESCRIPTION TYPE COMMENTS
2004 May 05 16
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
15.5 Curves measured in reference design
handbook, halfpage
MGX383
10−2 10−1 1 10 102
THD + N(%)
102
10
1
10−1
10−2
10−3
Po (W)
(2)
(1)
(3)
Fig.9 THD + N as function of output power.
2 × 8 Ω SE; VP = ±12.5 V.
(1) 6 kHz.
(2) 1 kHz.
(3) 100 Hz.
handbook, halfpage
MGX384
10 102 103 104 105
102
10
1
10−1
10−3
10−2
fi (Hz)
THD + N(%)
(1)
(2)
Fig.10 THD + N as function of frequency.
2 × 8 Ω SE; VP = ±12.5 V.
(1) Po = 10 W.
(2) Po = 1 W.
handbook, halfpage
0 10
100
0
20
40
60
80
2 4 6 8
η(%)
Po (W)
MGX385
Fig.11 Efficiency as function of output power.
2 × 8 Ω SE; VP = ±12.5 V; fi = 1 kHz.
handbook, halfpage
(4)
MGX386
SVRR(dB)
−60
−50
−30
−40
−20
−10
0
fi (Hz)10 102 103 104 105
(2)
(1)
(3)
Fig.12 SVRR as function of frequency.
VP = ±12.5 V; Vripple(p-p) = 2 V.
(1) Both supply lines in phase.
(2) One supply line (VSS) rippled.
(3) One supply line (VDD) rippled.
(4) Both supply lines in antiphase.
2004 May 05 17
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
handbook, halfpage
0
100
20
40
60
80
MGX387
10−110−2Po (W)
S/N(dB)
1 10 102
Fig.13 S/N as function of output power.
2 × 8 Ω SE; VP = ±12.5 V.
handbook, halfpage
−100
0
−80
−60
−40
−20
MGX388
10210fi (Hz)
αcs(dB)
103 104 105
(1)
(2)
Fig.14 Channel separation as function offrequency.
2 × 8 Ω SE; VP = ±12.5 V.
(1) Po = 1 W.
(2) Po = 10 W.
handbook, halfpage
10
35
15
20
25
30
MDB624
10210fi (Hz)
G(dB)
103 104 105
Fig.15 Gain as function of frequency.
2 × 8 Ω SE; VP = ±12.5 V; Vi = 100 mV.
handbook, halfpage
10
(1)
20
24
4
8
12
16
20
12
Po(W)
VP (V)14 16 18
MGX389
(2)
Fig.16 Output power as function of supply voltage.
THD + N = 10 %; fi = 1 kHz.
(1) 2 × 8 Ω SE.
(2) 2 × 16 Ω SE.
2004 May 05 18
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
16 PACKAGE OUTLINE
REFERENCESOUTLINEVERSION
EUROPEANPROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT243-3
0 5 10 mm
scale
D
L
E
A
c
A2
L3
Q
w Mbp
1
d
D
Z e
e
x h
1 17
j
Eh
non-concave
99-12-1703-03-12
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 7.7 mm) SOT243-3
view B: mounting base side
m 2e
v M
B
UNIT A e 1A2 bp c D(1) E(1) Z(1)d eDh L L 3 m
mm 17.015.5
4.64.4
0.750.60
0.480.38
24.023.6
20.019.6
10 2.54
v
0.612.211.8
1.27
e 2
5.08 2.41.6
Eh
6 2.001.45
2.11.8
3.43.1
4.38.47.0
Qj
0.25
w
0.03
x
2004 May 05 19
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
UNIT A e1 e2A2 bp c E(1)D(1) Z(1)d e L L 1
REFERENCESOUTLINEVERSION
EUROPEANPROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 13.54.64.4
0.750.60
0.480.38
24.023.6
20.019.6
10 2.5412.211.8
1.27 2.54 3.753.15
EhDh
6 2.001.45
2.11.8
3.43.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
3.753.15
SOT577-2
0 5 10 mm
scale
Qj
0.4
w
0.6
v
0.03
x
D
E
A
L1
QL
c
A2
w Mbp
1
d
Z e
2e
e
1 17
j
01-01-0503-03-12
RDBS17P: plastic rectangular-DIL-bent-SIL power package; 17 leads(row spacing 2.54 mm) SOT577-2
v M
Dx h
Eh
non-concave
view B: mounting base side
B
2004 May 05 20
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
17 SOLDERING
17.1 Introduction to soldering through-hole mountpackages
This text gives a brief insight to wave, dip and manualsoldering. A more in-depth account of soldering ICs can befound in our “Data Handbook IC26; Integrated CircuitPackages” (document order number 9398 652 90011).
Wave soldering is the preferred method for mounting ofthrough-hole mount IC packages on a printed-circuitboard.
17.2 Soldering by dipping or by solder wave
Driven by legislation and environmental forces theworldwide use of lead-free solder pastes is increasing.Typical dwell time of the leads in the wave ranges from3 to 4 seconds at 250 °C or 265 °C, depending on soldermaterial applied, SnPb or Pb-free respectively.
The total contact time of successive solder waves must notexceed 5 seconds.
The device may be mounted up to the seating plane, butthe temperature of the plastic body must not exceed thespecified maximum storage temperature (Tstg(max)). If theprinted-circuit board has been pre-heated, forced coolingmay be necessary immediately after soldering to keep thetemperature within the permissible limit.
17.3 Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of thepackage, either below the seating plane or not more than2 mm above it. If the temperature of the soldering iron bitis less than 300 °C it may remain in contact for up to10 seconds. If the bit temperature is between300 and 400 °C, contact may be up to 5 seconds.
17.4 Suitability of through-hole mount IC packages for dipping and wave soldering methods
Notes
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
2. For PMFP packages hot bar soldering or manual soldering is suitable.
PACKAGESOLDERING METHOD
DIPPING WAVE
CPGA, HCPGA − suitable
DBS, DIP, HDIP, RDBS, SDIP, SIL suitable suitable(1)
PMFP(2) − not suitable
2004 May 05 21
Philips Semiconductors Preliminary specification
Power stage 2 x 10 or 1 x 20 W class-Daudio amplifier
TDA8928J
18 DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet waspublished. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVELDATA SHEET
STATUS(1)PRODUCT
STATUS(2)(3) DEFINITION
I Objective data Development This data sheet contains data from the objective specification for productdevelopment. Philips Semiconductors reserves the right to change thespecification in any manner without notice.
II Preliminary data Qualification This data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification withoutnotice, in order to improve the design and supply the best possibleproduct.
III Product data Production This data sheet contains data from the product specification. PhilipsSemiconductors reserves the right to make changes at any time in orderto improve the design, manufacturing and supply. Relevant changes willbe communicated via a Customer Product/Process Change Notification(CPCN).
19 DEFINITIONS
Short-form specification The data in a short-formspecification is extracted from a full data sheet with thesame type number and title. For detailed information seethe relevant data sheet or data handbook.
Limiting values definition Limiting values given are inaccordance with the Absolute Maximum Rating System(IEC 60134). Stress above one or more of the limitingvalues may cause permanent damage to the device.These are stress ratings only and operation of the deviceat these or at any other conditions above those given in theCharacteristics sections of the specification is not implied.Exposure to limiting values for extended periods mayaffect device reliability.
Application information Applications that aredescribed herein for any of these products are forillustrative purposes only. Philips Semiconductors makeno representation or warranty that such applications will besuitable for the specified use without further testing ormodification.
20 DISCLAIMERS
Life support applications These products are notdesigned for use in life support appliances, devices, orsystems where malfunction of these products canreasonably be expected to result in personal injury. PhilipsSemiconductors customers using or selling these productsfor use in such applications do so at their own risk andagree to fully indemnify Philips Semiconductors for anydamages resulting from such application.
Right to make changes Philips Semiconductorsreserves the right to make changes in the products -including circuits, standard cells, and/or software -described or contained herein in order to improve designand/or performance. When the product is in full production(status ‘Production’), relevant changes will becommunicated via a Customer Product/Process ChangeNotification (CPCN). Philips Semiconductors assumes noresponsibility or liability for the use of any of theseproducts, conveys no licence or title under any patent,copyright, or mask work right to these products, andmakes no representations or warranties that theseproducts are free from patent, copyright, or mask workright infringement, unless otherwise specified.
2004 May 05 22
© Koninklijke Philips Electronics N.V. 2004 SCA76All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changedwithout notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com . Fax: +31 40 27 24825For sales offices addresses send e-mail to: [email protected] .
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R30/02/pp23 Date of release: 2004 May 05 Document order number: 9397 750 13041