Example 3.4

Problem: Use Silvaco’s Athena software to create a quasi one dimensional grid and do a

subsequent solid source phosphorus predeposition diffusion

Solution:

go athena

#TITLE: Solid Source Phosphorus Diffusion Example 3.2

line x loc=0.0 spacing=0.02

line x loc=0.2 spacing=0.02

line y loc=0.0 spacing=0.02

line y loc=0.1 spacing=0.02

line y loc=0.4 spacing=0.04

line y loc=0.8 spacing=0.06

line y loc=1.5 spacing=0.10

init c.boron=3e14

method adapt

# Diffuse Phosphorus

diffuse time=60 temp=1000 c.phos=1e20

# extract junction depth

extract name="xj" xj material="Silicon" mat.occno=1 x.val=0.1 junc.occno=1

#extract 1D electrical parameters

extract name="sheet_rho" n.sheet.res material="Silicon" mat.occno=1 x.val=0.1 region.occno=1

# Save and plot the final structure

structure outfile=ex3_4.str

tonyplot

go athena

#TITLE: Triple Diffused (3D) Bipolar Transistor Example 3.4

line x loc=0.0 spacing=0.02

line x loc=0.2 spacing=0.02

line y loc=0.0 spacing=0.02

line y loc=0.1 spacing=0.02

line y loc=0.3 spacing=0.04

line y loc=0.6 spacing=0.04

line y loc=0.8 spacing=0.06

line y loc=1.5 spacing=0.10

init c.phos=1e15

method adapt

# Diffuse Phosphorus for the collector

diffuse time=10 temp=1000 c.phos=1e19

# Perform drive-in diffusion for collector

Diffuse Temperature=1100 Time=120

# Diffuse Boron for the base

diffuse time=10 temp=900 c.boron=1e20

# Perform drive-in diffusion for base

Diffuse Temperature=1000 Time=60

# Diffuse Arsenic for the emitter

diffuse time=10 temp=1000 c.arsenic=1e20

# extract junction depths

extract name="xj" xj material="Silicon" mat.occno=1 x.val=0.1 junc.occno=1

extract name="xj" xj material="Silicon" mat.occno=1 x.val=0.1 junc.occno=2

#extract 1D electrical parameters

extract name="sheet_rho" n.sheet.res material="Silicon" mat.occno=1 x.val=0.1

region.occno=1

extract name="sheet_rho" p.sheet.res material="Silicon" mat.occno=1 x.val=0.1

region.occno=2

extract name="sheet_rho" n.sheet.res material="Silicon" mat.occno=1 x.val=0.1

region.occno=3

# Saveand plot the final structure

structure outfile=ex3_3.str

tonyplot

quit

\

go athena

#TITLE: Furnace Gate Oxidation Example 4.2

line x loc=0.0 spacing=0.02

line x loc=0.2 spacing=0.02

line y loc=0.0 spacing=0.02

line y loc=0.1 spacing=0.02

line y loc=0.3 spacing=0.04

line y loc=0.6 spacing=0.04

line y loc=0.8 spacing=0.06

line y loc=1.5 spacing=0.10

init c.boron=1e17

method adapt

# Push the wafers at 800 C

Diffuse Temperature=27 T.rate=25.7667 Time=30

#extract oxide thickness

extract name="tox1" thickness material="oxide" mat.occno=1 y.val=0.1

# Ramp the furnace to 1000 C

Diffuse Temperature=800 T.rate=20 Time=10 F.N2=1.8 F.O2=0.2

#extract oxide thickness

extract name="tox2" thickness material="oxide" mat.occno=1 y.val=0.1

# Grow gate oxide

Diffuse Temperature=1000 DryO2 HCl=3.0 Time=30

#extract oxide thickness

extract name="tox3" thickness material="oxide" mat.occno=1 y.val=0.1

# Ramp the furnace to 800 C

Diffuse Temperature=1000 T.rate=-20 Time=10 F.N2=1.8 F.O2=0.2

#extract oxide thickness

extract name="tox4" thickness material="oxide" mat.occno=1 y.val=0.1

# Pull the wafers at 800 C

Diffuse Temperature=800 T.rate=-25.7667 Time=30

#extract oxide thickness

extract name="tox" thickness material="oxide" mat.occno=1 y.val=0.1

# Saveand plot the final structure

structure outfile=ex4_2

tonyplot

quit

go athena

#TITLE: Rapid Thermal Gate Oxidation Example 4.3

line x loc=0.0 spacing=0.02

line x loc=0.2 spacing=0.02

line y loc=0.0 spacing=0.01

line y loc=0.1 spacing=0.02

line y loc=0.3 spacing=0.04

init c.boron=1e17

method adapt

# Soak at 500 C

Diffuse Temperature=27 T.rate=1892 Time=0.25

#extract oxide thickness

extract name="tox1" thickness material="oxide" mat.occno=1 y.val=0.1

# Ramp the system to 900 C

Diffuse Temperature=500 T.rate=6000 Time=0.066667 F.N2=1.8 F.O2=0.2

#extract oxide thickness

extract name="tox2" thickness material="oxide" mat.occno=1 y.val=0.1

# Grow gate oxide

Diffuse Temperature=900 DryO2 Time=0.2

#extract oxide thickness

extract name="tox3" thickness material="oxide" mat.occno=1 y.val=0.1

# Ramp the system to room temperature C

Diffuse Temperature=900 T.rate=-6000 Time=0.15 F.N2=1.8 F.O2=0.2

#extract oxide thickness

extract name="tox" thickness material="oxide" mat.occno=1 y.val=0.1

# Save and plot the final structure

structure outfile=ex4_3

quit

go athena

#TITLE: Boron Implant Example 5.3

line x loc=0.0 spacing=0.02

line x loc=0.2 spacing=0.02

line y loc=0.0 spacing=0.005

line y loc=0.1 spacing=0.005

line y loc=0.2 spacing=0.01

line y loc=0.4 spacing=0.02

line y loc=0.6 spacing=0.04

init c.phos=1e17

method adapt

# implant Boron

implant boron energy=2 dose=1e+15

# extract junction depth

extract name="xj" xj material="Silicon" mat.occno=1 x.val=0.1 junc.occno=1

#extract 1D electrical parameters

extract name="sheet_rho" n.sheet.res material="Silicon" mat.occno=1 x.val=0.1 region.occno=1

diffuse time=0.017 temp=1000

extract name="sheet_rho" n.sheet.res material="Silicon" mat.occno=1 x.val=0.1 region.occno=1

# Save and plot the final structure

structure outfile=ex5_3.str

tonyplot

Solution:

go athena

#TITLE: Boron Implant Example 5.4

line x loc=0.0 spacing=0.02

line x loc=0.2 spacing=0.02

line y loc=0.0 spacing=0.002 line y loc=0.1 spacing=0.002 line y loc=0.2 spacing=0.005

line y loc=0.4 spacing=0.01 line y loc=0.6 spacing=0.02

init c.phos=1e17

method adapt

# implant Boron implant boron energy=2 dose=1e+15 # extract junction depth

extract name="xj" xj material="Silicon" mat.occno=1 x.val=0.1 junc.occno=1

#extract 1D electrical parameters

extract name="sheet_rho" p.sheet.res material="Silicon" mat.occno=1 x.val=0.1 region.occno=1

# Save and plot the final structure

structure outfile=ex5_4.str

tonyplot