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©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 1
22 Bd Benoni Goullin44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected] www.systemplus.fr
STMicroelectronics SiC ModuleTesla Model 3 InverterPower Semiconductor report by Elena Barbarini June 2018 – version 1
REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 2
SUMMARY
Overview / Introduction 4
o Executive Summary
o Reverse Costing Methodology
Company Profile 9
o STMicroelectronics
Physical Analysis 18
o Synthesis of the Physical Analysis
o Package analysis
Package opening
Package Cross-Section
o MOSFET Die
MOSFET Die View & Dimensions
MOSFET Die Process
MOSFET Die Cross-Section
MOSFET Die Process Characteristic
Manufacturing Process 81
o MOSFET Die Front-End Process
o MOSFET Die Fabrication Unit
o Final Test & Packaging Fabrication unit
Cost Analysis 91
o Synthesis of the cost analysis
o Yields Explanation & Hypotheses
o MOSFET die
MOSFET Front-End Cost
MOSFET Die Probe Test, Thinning & Dicing
MOSFET Wafer Cost
MOSFET Die Cost
o Complete Module
Packaging Cost
Final Test Cost
Component Cost
Price Analysis 106
o Estimation of selling price
Comparison 109
o Comparison with Mitsubishi J-Series TP-M power module
Feedbacks 112
Company services 114
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 3
Overview / Introductiono Executive Summaryo Marketo Reverse Costing
Methodology
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Executive Summary
Pushed by aggressive legislation, CO2 reduction is one of the key challenges in the 21st century. The best solution currentlyavailable to the automotive industry is the electrification of vehicles, with different levels of electrification depending on thestrategies of different car manufacturers. 780,000 battery electric vehicles were shipped in 2017, a number expected to growto almost 2.8M by 2022. Standard inverter power modules integrate silicon IGBTs, but in electric vehicles the available spacein the engine compartment is often so limited that it is difficult to accommodate a power control unit (PCU). Thus, it isnecessary that the PCU, which controls electric vehicles’ traction motors, has a higher power density and therefore is smaller.Thanks to higher thermal and electrical performance, SiC is the new competitor to silicon at high voltages. Nevertheless, highpower densities need high thermal dissipation and thus new packages are needed to improve device performance. To achievethese targets, manufacturers have developed different solutions, such as limiting wire bonding or using overmolded structuresto efficiently cool the power semiconductor chips.
Tesla is the first high-class car manufacturer to integrate a full SiC power module, in its Model 3. Thanks to its collaborationwith STMicroelectronics the Tesla inverter is composed of 24 1-in-1 power modules assembled on a pin-fin heatsink.
The module contains two SiC MOSFETs with an innovative die attach solution and connected directly on the terminals withcopper clips and thermally dissipated by copper baseplates.
The SiC MOSFET is manufactured with the latest STMicroelectronics technology design, which allows reduction of conductionlosses and switching losses. Based on a complete teardown analysis, the report also provides an estimation of the productioncost of the SiC MOSFET and package.
Moreover, the report includes a technical and cost comparison with the Mitsubishi J-Series TP-M power module. It highlightsthe differences in design of the packaging and the material solutions adopted by the two companies.
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 4
Overview / Introductiono Executive Summaryo Marketo Reverse Costing
Methodology
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
POWER MODULE Die LEVEL: different integration
6-in-1 power module
1-in-1 power module
2-in-1 power module
all-in-1 power module
Leaf2011
Leaf2012
Prius &Mirai 2015
Camry2013
e-up! 2013Golf 2014
Civic &Fit2010
Zoe 2013
Focus 2014
Outlander2014
Volt 2015
Accord2013
Prius 2010
Auris2011
Yaris2012
Prius 2004
4-in-1 power module
C-max 2015
Model3 2017
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 5
Overview / Introductiono Executive Summaryo Marketo Reverse Costing
Methodology
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Power Module Issues
Heatsink
Thermal Interface Material (TIM)
Substrate
Baseplate
Plastic case & Encapsulation: better thermal conductivity
Die attach: improve thermal reliability and lifetime
Interconnection: better lifetime and reduce inductance
Encapsulation
Substrate: higher thermal conductivity
Heat sink
- Junction temperature
- Heat sink temperature
- Case temperature
Ambient temperature
In Si modules , mismatching CTE (coefficient of thermal expansion) makes layers detach from one another.
With the introduction of SiC this problem is much more highligted; in fact the main problem of SiC is thermal dissipation because of material density; thus an adapted package and system integration is needed.
Substrate attach: suppress layers to improve reliability and decrease thickness
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 6
Overview / Introduction
Company Profile & Supply Chain o STMicroelectronics Profileo STMicroelectronics Product
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
ST SiC products
Part Number VDSSDrain Current (Dc)
(A)P<sub>TOT</sub> (W) Package RDS(on) (Ω) (@VGS=20V)
SCT10N120 1200 12 150 HiP247 IN LINE 0.69
SCT20N120 1200 20 175 HiP247 IN LINE 0.239
SCT30N120 1200 45 270 HiP247 IN LINE 0.1
SCT50N120 1200 65 318 HiP247 IN LINE 0.069
SCTWA50N120 1200 65 318 HIP247 LONG LEADS 0.069
SCTW100N65G2AG 650 100 390 HiP247 IN LINE -
• ST’s 650 V and 1200 V silicon carbide (SiC) MOSFETs feature very low RDS(on)*area combined with excellent switching
performance, translating into more efficient and compact systems. Compared with silicon MOSFETs, SiC MOSFETs
exhibit low on-state resistance*area even at high temperatures and excellent switching performances versus the best-
in-class IGBTs in all temperature ranges, simplifying the thermal design of power electronic systems.
Similar to analysed device
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 7
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Heatsink
Package Cross section
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 8
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Heatsink
Package Cross section
Package Cross section
xxxxx
Al heatsink
Al heatsink
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 9
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
xxxx
xm
m
MOSFET die dimensions
MOSFET Die – Optical view
o Die dimensions:xxxx mm² (xxxxmm x xxxxmm)
o There is no marking on the die.
xxxx mm
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 10
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Die cross section
Die cross section – Optical View
o Substrate thickness: xxxx µm
xxx µm
Blade dicing
SiC Substrate
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 11
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Die cross section
Die cross section –SEM View
Die cross section –SEM View
xxxx µmOxide #1 + #2
xxxx µmOxide #3
Xxx µmOxide #1
Al contact
Al contact
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 12
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Die cross section
Die cross section – SEM View
Al contact
xxxx µm
Oxide xxxµm
poly xxx µm
NiSi
Oxide
xxx µm
Gate oxide
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 13
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo Fab Unito Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Description of the Wafer Fabrication Units - MOSFETIn our calculation, we simulate a production unit using 100mm wafers.
MOSFET wafer fab unit:
Name: STMicro CTM 100mm wafer
Wafer diameter: 100mm (4-inch)
Capacity: 30,000 wafers / month
Year of start: 1980
Most advanced process: Power device
Products: Discrete/Power - Mainly power products; Diodes & MOSFET
Location: Catania, Italy
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 14
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo Fab Unito Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
MOSFET Process Flow (1/4)
Epitaxy
•Epitaxy
Implantation
• SiO2 deposition
•Pattern SiO2
•P well implantation
Implantation
• SiO2 deposition
•Pattern SiO2
•N+ source implantation
N- Drift region Epitaxy
SiC Substrate N+
00 00 000
00 00 000
Drawing not to Scale
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 15
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo Fab Unito Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
MOSFET Process Flow (3/4)
Drawing not to Scale
Gate isolation
•Oxide: deposition and pattern
Silicide
•Nickel deposition and pattern
• Silicidation
Metal contact
•Ti and Aluminum deposition and pattern
00 00 000
00 00 000
00 00 000
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 16
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Feedback
About System Plus
MOSFET Front-End Cost
The front-end cost ranges from $xxxx to $xxx accordingto years.
The main part of the wafer cost in 2018 is due to the xxxx(xxx%).
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 17
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Feedback
About System Plus
MOSFET Die Cost
The MOSFET die cost ranges from $xxxx to $xxxxaccording to years.
The Front-end manufacturing represents xxxx of thecomponent cost in 2018.
Probe test, dicing and scrap account for xxxx of thecomponent cost.
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 18
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Feedback
About System Plus
Final Module Cost
The module cost ranges from $xxx to $xxxx according toyears.
The SiC MOSFET dies manufacturing represents xxx% ofthe component cost.
The packaging represents xx% of the component cost.
Final test and yield losses account for x% of thecomponent cost.
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 19
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Estimated Manufacturer Price
The module manufacturing cost ranges from$xxx to $xxx according to years.
By taking into account a gross margin of 39%for ST (2017 results), the modulemanufacturer price is estimated to range from$xxxx to $xxxxx according to years.
Gross Margin 39.0%
STMicroelectronics
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 20
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Pluso Company serviceso Related reportso Contacto Legal
REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING
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©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 21
COMPANYSERVICES
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 22
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Pluso Company serviceso Related reportso Contacto Legal
Business Models Fields of Expertise
Custom Analyses(>130 analyses per year)
Reports(>40 reports per year)
Costing Tools
Trainings
©2018 by System Plus Consulting | STMicroelectronics SiC Module in Tesla Model3 Inverter 23
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Pluso Company serviceso Related reportso Contacto Legal
Contact
Headquarters21 rue La Noue Bras de Fer44200 NantesFRANCE+33 2 40 18 09 [email protected]
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