February 2017 DocID026148 Rev 2 1/15

This is information on a product in full production. www.st.com

STGFW20V60DF

Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

Datasheet - production data

Figure 1: Internal schematic diagram

Features Maximum junction temperature: TJ = 175 °C

Very high speed switching series

Tail-less switching off

VCE(sat) = 1.8 V (typ.) @ IC = 20 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Very fast soft recovery antiparallel diode

Lead free package

Applications Photovoltaic inverters

Uninterruptible power supply

Welding

Power factor correction

Very high frequency converters

Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Table 1: Device summary

Order code Marking Package Packing

STGFW20V60DF G20V60DF TO-3PF Tube

12

3

TO-3PF

C (2)

G (1)

E (3)Sc12850_no_tab

Contents STGFW20V60DF

2/15 DocID026148 Rev 2

Contents

1 Electrical ratings ............................................................................. 3

2 Electrical characteristics ................................................................ 4

2.1 Electrical characteristics curves ........................................................ 6

3 Test circuits ................................................................................... 11

4 Package information ..................................................................... 12

4.1 TO-3PF package information .......................................................... 12

5 Revision history ............................................................................ 14

STGFW20V60DF Electrical ratings

DocID026148 Rev 2 3/15

1 Electrical ratings Table 2: Absolute maximum ratings

Symbol Parameter Value Unit

VCES Collector-emitter voltage (VGE = 0) 600 V

IC Continuous collector current at TC = 25 °C 40 A

Continuous collector current at TC = 100 °C 20 A

ICP(1) Pulsed collector current 80 A

VGE Gate-emitter voltage ±20 V

IF Continuous forward current at TC = 25 °C 40 A

Continuous forward current at TC = 100 °C 20 A

IFP(1) Pulsed forward current 80 A

VISO Insulation withstand voltage (RMS) from all three leads to external

heat sink (t = 1 s, TC = 25 °C) 3.5 kV

PTOT Total dissipation at TC = 25 °C 52 W

TSTG Storage temperature range -55 to 150 °C

TJ Operating junction temperature range -55 to 175 °C

Notes:

(1)Pulse width is limited by maximum junction temperature.

Table 3: Thermal data

Symbol Parameter Value Unit

RthJC Thermal resistance junction-case IGBT 2.9 °C/W

RthJC Thermal resistance junction-case diode 3.4 °C/W

RthJA Thermal resistance junction-ambient 50 °C/W

Electrical characteristics STGFW20V60DF

4/15 DocID026148 Rev 2

2 Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)CES Collector-emitter breakdown

voltage VGE = 0 V, IC = 2 mA 600

V

VCE(sat) Collector-emitter saturation

voltage

VGE = 15 V, IC = 20 A

1.8 2.2

V

VGE = 15 V, IC = 20 A,

TJ = 125 °C 2.15

VGE = 15 V, IC = 20 A,

TJ = 175 °C 2.3

VF Forward on-voltage

IF = 20 A

1.7 2.2

V IF = 20 A, TJ = 125 °C

1.55

IF = 20 A, TJ = 175 °C

1.3

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5 6 7 V

ICES Collector cut-off current VGE = 0 V, VCE = 600 V

25 µA

IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V

250 µA

Table 5: Dynamic characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

Cies Input capacitance VCE= 25 V, f = 1 MHz,

VGE = 0 V

- 2800 - pF

Coes Output capacitance - 110 - pF

Cres Reverse transfer capacitance - 64 - pF

Qg Total gate charge VCC = 480 V, IC = 20 A, VGE = 0 to 15 V (see Figure 28: " Gate charge test circuit")

- 116 - nC

Qge Gate-emitter charge - 24 - nC

Qgc Gate-collector charge - 50 - nC

STGFW20V60DF Electrical characteristics

DocID026148 Rev 2 5/15

Table 6: IGBT switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VCE = 400 V, IC = 20 A,

VGE = 15 V

(see Figure 27: " Test circuit

for inductive load switching" )

- 38 - ns

tr Current rise time - 10 - ns

(di/dt)on Turn-on current slope - 1556 - A/µs

td(off) Turn-off-delay time - 149 - ns

tf Current fall time - 15 - ns

Eon(1) Turn-on switching energy - 200 - µJ

Eoff(2) Turn-off switching energy - 130 - µJ

Ets Total switching energy - 330 - µJ

td(on) Turn-on delay time

VCE = 400 V, IC = 20 A,

VGE = 15 V, TJ = 175 °C

(see Figure 27: " Test circuit

for inductive load switching" )

- 37 - ns

tr Current rise time - 12 - ns

(di/dt)on Turn-on current slope - 1340 - A/µs

td(off) Turn-off-delay time - 150 - ns

tf Current fall time - 23 - ns

Eon(1) Turn-on switching energy - 430 - µJ

Eoff(2) Turn-off switching energy - 210 - µJ

Ets Total switching energy - 640 - µJ

Notes:

(1)Including the reverse recovery of the diode. (2)Including the tail of the collector current.

Table 7: Diode switching characteristics (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

trr Reverse recovery time

IF = 20 A, VR = 400 V,

VGE = 15 V, di/dt = 1000 A/µs

(see Figure 27: " Test circuit

for inductive load switching")

- 40

ns

Qrr Reverse recovery charge - 320

nC

Irrm Reverse recovery current - 16

A

dIrr/dt Peak rate of fall of reverse

recovery current during tb - 910

A/µs

Err Reverse recovery energy - 115

µJ

trr Reverse recovery time

IF = 20 A, VR = 400 V,

VGE = 15 V, TJ = 175 °C,

di/dt = 1000 A/µs

(see Figure 27: " Test circuit

for inductive load switching")

- 72

ns

Qrr Reverse recovery charge - 930

nC

Irrm Reverse recovery current - 26

A

dIrr/dt Peak rate of fall of reverse

recovery current during tb - 530

A/µs

Err Reverse recovery energy - 307

µJ

Electrical characteristics STGFW20V60DF

6/15 DocID026148 Rev 2

2.1 Electrical characteristics curves

Figure 2: Power dissipation vs. case temperature

Figure 3: Collector current vs. case temperature

Figure 4: Output characteristics (TJ = 25 °C)

Figure 5: Output characteristics (TJ = 175 °C)

Figure 6: VCE(sat) vs. junction temperature

Figure 7: VCE(sat) vs. collector current

20

30

40

50

50 75 100 125 150 175

Ptot (W)

TC (°C)0 250

10

AM17175v2 AM17174v2

0

5

10

15

20

0 25 50 75 100 125 150 175

IC (A)

TC(°C)

VGE =15 V, T J= 175 °C

AM17171v1

9 V

11 V

13 V

15 V

0

10

20

30

40

50

60

70

0 1 2 3 4

Ic (A)

VCE (V)

VGE=7 V

AM17172v1

9 V

11 V

13 V

15 V

0

10

20

30

40

50

60

70

0 1 2 3 4

Ic (A)

VCE (V)

VGE=7 V

AM17176v1

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

-50 -25 0 25 50 75 100 125 150 175

VCE(sat)

(V)

TJ(ºC)

IC 40A

IC = 20A

IC = 10A

VGE =15V

AM17177v1

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

0 10 20 30 40 50 60 70 80

VCE(sat)

(V)

IC (A)

TJ= 25°C

TJ=-40°C

TJ= 175°C

VGE=15V

STGFW20V60DF Electrical characteristics

DocID026148 Rev 2 7/15

Figure 8: Transfer characteristics

Figure 9: Diode VF vs. forward current

Figure 10: Normalized VGE(th) vs. junction temperature

Figure 11: Normalized V(BR)CES vs. junction temperature

Figure 12: Capacitance variations

Figure 13: Gate charge vs. gate-emitter voltage

AM17173v1

TJ=175°C

10

20

30

40

50

60

70

7 8 9 10 11

IC(A)

VGE(V)

-40°C25°C

VCE = 10 V

AM17178v1

0.8

1.2

1.6

2

2.4

10 15 20 25 30 35

VF(V)

IF (A)

T =175 °C

25°C

-40°C

J

AM17181v1

0.6

0.7

0.8

0.9

1.0

1.1

-50 0 50 100 150

VGE(th)norm

TJ(ºC)

VCE = VGE

IC = 1mA

AM17180v1

0.9

1.0

1.1

-50 0 50 100 150

V(BR)ces

norm

TJ(ºC)

IC= 2 mA

AM17183v1

10

100

1000

0.1 1 10

C (pF)

VCE(V)

Cres

Coes

Cies

AM17182v1

0

2

4

6

8

10

12

14

16

0 25 50 75 100 125

VGE(V)

Qg (nC)

VCC = 480 V

IC = 20 A

Electrical characteristics STGFW20V60DF

8/15 DocID026148 Rev 2

Figure 14: Switching energy vs. collector current

Figure 15: Switching energy vs. gate resistance

Figure 16: Switching energy vs. junction temperature

Figure 17: Switching energy vs. collector emitter voltage

Figure 18: Switching times vs. collector current

Figure 19: Switching times vs. gate resistance

AM17185v1

0

200

400

600

800

1000

0 10 20 30 40

E (µJ)

Ic (A)

EON

EOFF

VCC 400V, VGE= 15V,

Rg=10Ω, TJ= 175°C

AM17184v1

100

300

500

700

0 10 20 30 40

E (µJ)

RG (Ω)

E ON

E OFF

VCC 400V, VGE= 15V,

IC =20 A, TJ= 175°C

AM17186v1

100

150

200

250

300

350

400

450

0 25 50 75 100 125 150 175

E (µJ)

TJ (ºC)

EON

EOFF

VCC 400V, VGE= 15V,IC= 20A, Rg= 10Ω

AM17187v1

100

200

300

400

500

600

150 200 250 300 350 400 450

E (µJ)

Vce (V)

EON

EOFF

VGE= 15V,TJ = 175 °C

IC = 20 A, Rg= 10 Ω

AM17188v1

1

10

100

0 10 20 30 40

t (ns)

Ic (A)

VCC=400V, VGE =15V,

Tj =175°C, Rg =10Ωtdoff

tdontf

tr

AM17189v1

tf

1

10

100

0 10 20 30 40

t (ns)

Rg (Ω)

VCC= 400V, VGE= 15V,

Tj=175°C Ic = 20 A

tdoff

tdon

tr

STGFW20V60DF Electrical characteristics

DocID026148 Rev 2 9/15

Figure 20: Reverse recovery current vs. diode current slope

Figure 21: Reverse recovery time vs. diode current slope

Figure 22: Reverse recovery charge vs. diode current slope

Figure 23: Reverse recovery energy vs. diode current slope

AM17190v1

0

10

20

30

40

50

0 500 1000 1500 2000 2500

Irm(A)

di/dt (A/µs)

Vr = 400V, IF= 20 A

TJ=25°C

TJ=175°C

AM17191v1

0

20

40

60

80

100

120

140

160

180

0 500 1000 1500 2000 2500

trr (µs)

di/dt (A/µs)

Vr = 400V, IF= 20 A

TJ=25°C

TJ=175°C

AM17192v1

0

200

400

600

800

1000

1200

1400

0 500 1000 1500 2000 2500

Qrr (nC)

di/dt (A/µs)

Vr = 400V,IF= 20 A

TJ=25°C

TJ=175°C

AM17193v1

0

100

200

300

400

500

600

700

800

0 500 1000 1500 2000 2500

Err (µJ)

di/dt (A/µs)

Vr = 400 V, IF= 20 A

TJ=25°C

TJ=175°C

Electrical characteristics STGFW20V60DF

10/15 DocID026148 Rev 2

10 µs

100 µs

1 ms

(single pulse TC=25°C,

TJ<=175°C; VGE=15V)

AM17179v2

0.01

0.1

1

10

1 10 100

IC (A)

VCE (V)

10-5

10-4

10-3

tp(s)10

-2

10-1

K

0.2

0.05

0.02

0.01

0.1

Zth=k Rthj-cd=tp/t

tp

t

Single pulse

d=0.5

10-2

10-1

10

ZthTOF3T_A

CG20930

tp

Zth = k R

thj-C

δ = tp/ Ƭ

10-5 10-4 10-3 10-210-2

10-1

K

10-1 tp(s)

Ƭ

δ = 0.5

δ = 0.2

δ = 0.1

δ = 0.01

δ = 0.02δ = 0.05

SINGLE PULSE

Zth = k R

thj-C

δ = tp/ Ƭ

tpƬ

Figure 24: Safe operating area

Figure 25: Thermal impedance for IGBT

Figure 26: Thermal impedance for diode

STGFW20V60DF Test circuits

DocID026148 Rev 2 11/15

3 Test circuits Figure 27: Test circuit for inductive load

switching

Figure 28: Gate charge test circuit

Figure 29: Switching waveform

Figure 30: Diode reverse recovery waveform

A AC

E

G

B

RG+

-

G

C 3.3µF

1000µF

L=100 µH

VCC

E

D.U.T

B

AM01504v1

t

AM01507v1

10%

VRRM

dv/dt

di/dt

IRRM

IF

trr

ts

tf

Qrr

IRRM

Package information STGFW20V60DF

12/15 DocID026148 Rev 2

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

4.1 TO-3PF package information

Figure 31: TO-3PF package outline

7627132_D

STGFW20V60DF Package information

DocID026148 Rev 2 13/15

Table 8: TO-3PF mechanical data

Dim. mm

Min. Typ. Max.

A 5.30

5.70

C 2.80

3.20

D 3.10

3.50

D1 1.80

2.20

E 0.80

1.10

F 0.65

0.95

F2 1.80

2.20

G 10.30

11.50

G1

5.45

H 15.30

15.70

L 9.80 10 10.20

L2 22.80

23.20

L3 26.30

26.70

L4 43.20

44.40

L5 4.30

4.70

L6 24.30

24.70

L7 14.60

15

N 1.80

2.20

R 3.80

4.20

Dia 3.40

3.80

Revision history STGFW20V60DF

14/15 DocID026148 Rev 2

5 Revision history Table 9: Document revision history

Date Revision Changes

28-Mar-2014 1 Initial release

14-Feb-2017 2 Updated Table 1: "Device summary".

Minor text changes

STGFW20V60DF

DocID026148 Rev 2 15/15

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