24
This is information on a product in full production. March 2013 DocID022363 Rev 3 1/24 24 STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Figure 1. Internal schematic diagram Features High speed switching Tight parameters distribution Safe paralleling Low thermal resistance Short circuit rated Ultrafast soft recovery antiparallel diode Applications Inverter UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. 1 3 1 2 3 1 2 3 1 2 3 D²PAK TO-220FP TO-220 TO-247 TAB TAB C (2, TAB) G (1) E (3) Table 1. Device summary Order codes Marking Package Packaging STGB30H60DF GB30H60DF D²PAK Tape and reel STGF30H60DF GF30H60DF TO-220FP Tube STGP30H60DF GP30H60DF TO-220 STGW30H60DF GW30H60DF TO-247 www.st.com

STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

  • Upload
    others

  • View
    12

  • Download
    0

Embed Size (px)

Citation preview

Page 1: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

This is information on a product in full production.

March 2013 DocID022363 Rev 3 1/24

24

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF

600 V, 30 A high speed trench gate field-stop IGBT

Datasheet - production data

Figure 1. Internal schematic diagram

Features• High speed switching

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Short circuit rated

• Ultrafast soft recovery antiparallel diode

Applications• Inverter

• UPS

• PFC

DescriptionThis device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.

13

12

3

12

3

12

3

D²PAKTO-220FP

TO-220 TO-247

TAB

TAB

C (2, TAB)

G (1)

E (3)

Table 1. Device summary

Order codes Marking Package Packaging

STGB30H60DF GB30H60DF D²PAK Tape and reel

STGF30H60DF GF30H60DF TO-220FP

TubeSTGP30H60DF GP30H60DF TO-220

STGW30H60DF GW30H60DF TO-247

www.st.com

Page 2: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

Contents STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

2/24 DocID022363 Rev 3

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Page 3: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

DocID022363 Rev 3 3/24

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol ParameterTO-220D²PAKTO-247

TO-220FP Unit

VCES Collector-emitter voltage (VGE = 0) 600 V

IC Continuous collector current at TC = 25 °C 60 60 (1)

1. Limited by maximum junction temperature

A

IC Continuous collector current at TC = 100 °C 30 30(1) A

ICP (2)

2. Pulse width limited by maximum junction temperature and turn-off within RBSOA.

Pulsed collector current 120 120(1) A

VGE Gate-emitter voltage ±20 V

IF Continuous forward current TC = 25 °C 60 60(1) A

IF Continuous forward current at TC = 100 °C 30 30(1) A

IFP (2) Pulsed forward current 120 120(1) A

PTOT Total dissipation at TC = 25 °C 260 37(1) W

TSTG Storage temperature range - 55 to 150°C

TJ Operating junction temperature - 40 to 175

Table 3. Thermal data

Symbol ParameterValue

UnitD²PAK TO-220FP TO-220 TO-247

RthJCThermal resistance junction-case IGBT

0.58 4 0.58 °C/W

RthJCThermal resistance junction-case diode

2.5 5.6 2.5 °C/W

RthJAThermal resistance junction-ambient

62.5 50 °C/W

Page 4: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

4/24 DocID022363 Rev 3

2 Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static

Symbol Parameter Test condition Min. Typ. Max. Unit

V(BR)CESCollector-emitter breakdown voltage

(VGE = 0)IC = 2 mA 600 V

VCE(sat) Collector-emitter saturation voltage

VGE = 15 V, IC = 30 A 2.0 2.4 V

VGE = 15 V, IC = 30 ATJ = 175 °C

2.4 V

VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA 5.0 6.0 7.0 V

ICES Collector cut-off current (VGE = 0) VCE = 600 V 25 µA

IGESGate-emitter leakage

current (VCE = 0)VGE = ± 20 V 250 nA

Table 5. Dynamic

Symbol Parameter Test condition Min. Typ. Max. Unit

Cies Input capacitanceVCE = 25 V, f = 1 MHz, VGE = 0

-

3600

-

pF

Coes Output capacitance 130 pF

Cres Reverse transfer capacitance 65 pF

Qg Total gate chargeVCC = 400 V, IC = 30 A, VGE = 15 V

- 105 - nC

Qge Gate-emitter charge - 30 - nC

Qgc Gate-collector charge - 35 - nC

Page 5: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

DocID022363 Rev 3 5/24

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Electrical characteristics

Table 6. Switching on/off (inductive load)

Symbol Parameter Test condition Min. Typ. Max. Unit

td(on) Turn-on delay time VCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 V-

50

-

ns

tr Current rise time 15 ns

(di/dt)on Turn-on current slope 1600 A/µs

td(on) Turn-on delay time VCE = 400 V, IC = 30 A,RG = 10 Ω, VGE = 15 VTJ = 175 °C

-

47

-

ns

tr Current rise time 17 ns

(di/dt)on Turn-on current slope 1400 A/µs

tr(Voff) Off voltage rise timeVCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 V-

20

-

ns

td(off) Turn-off delay time 160 ns

tf Current fall time 60 ns

tr(Voff) Off voltage rise time VCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 VTJ = 175 °C

-

22

-

ns

td(off) Turn-off delay time 146 ns

tf Current fall time 88 ns

tsc Short circuit withstand time VCC ≤ 360 V, VGE = 15 V 3 6 - µs

Table 7. Switching energy (inductive load)

Symbol Parameter Test condition Min. Typ. Max. Unit

Eon (1) Turn-on switching losses

VCE = 400 V, IC = 30 A,RG = 10 Ω, VGE = 15 V

- 0.35 - mJ

Eoff (2) Turn-off switching losses 0.40 mJ

Ets Total switching losses 0.75 mJ

Eon (1) Turn-on switching losses VCE = 400 V, IC = 230 A,

RG = 10 Ω, VGE = 15 VTJ = 175 °C

0.61 mJ

Eoff (2) Turn-off switching losses 0.84 mJ

Ets Total switching losses 1.45 mJ

1. Energy losses include reverse recovery of the diode.

2. Turn-off losses include also the tail of the collector current.

Page 6: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

6/24 DocID022363 Rev 3

Table 8. Collector-emitter diode

Symbol Parameter Test condition Min. Typ. Max. Unit

VF Forward on-voltageIF = 30 A - 2.0 2.3 V

IF = 30 A, TJ = 175 °C 1.5 V

trr Reverse recovery timeVr = 400 V, IF = 30 A; diF/dt = 400 A / µs

- 110 - ns

Qrr Reverse recovery charge 136 nC

Irrm Reverse recovery current 2.5 A

trr Reverse recovery timeVr = 400 V, IF = 30 A; diF/dt = 400 A / µsTJ = 175 °C

- 190 - ns

Qrr Reverse recovery charge 506 nC

Irrm Reverse recovery current 5.3 A

Page 7: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

DocID022363 Rev 3 7/24

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Electrical characteristics

2.1 Electrical characteristics (curves) Figure 2. Output characteristics (TJ = 25°C) Figure 3. Output characteristics (TJ = 175°C)

Figure 4. Transfer characteristics Figure 5. Normalized VGE(th) vs. junction temperature

Figure 6. Power dissipation vs. case temperature for D²PAK, TO-220 and TO-247

Figure 7. Power dissipation vs. case temperature for TO-220FP

IC

60

40

20

00 2 VCE(V)4

(A)

1 3

80

10011V

9V

13V

VGE=15VAM17360v1 IC

60

40

20

00 2 VCE(V)4

(A)

1 3

80

100 11V

9V

13V

VGE=15V

7V

AM17361v1

IC

60

40

20

07 9 VGE(V)11

(A)

8 10

80

100

TJ=-40°C

TJ=25°C

TJ=175°CVCE=5V

AM17362v1VGE(th)

0.9

0.8

0.7

0.6-50 0 TJ(°C)100

norm

50

1.0

150

AM17369v1

PTOT

120

80

40

00 50 TCASE(°C)100

(W)

25 75

160

200

125 150

240

AM17364v1 PTOT

16

8

00 50 TCASE(°C100

(W)

25 75

24

32

125 150

AM17365v1

Page 8: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

8/24 DocID022363 Rev 3

Figure 8. Collector current vs. frequency for D²PAK, TO-220 and TO-247

Figure 9. Collector current vs. frequency for TO-220FP

Figure 10. VCE(sat) vs. junction temperature Figure 11. VCE(sat) vs. collector current

Figure 12. Collector current vs. case temperature for D²PAK, TO-220 and TO-247

Figure 13. Collector current vs. case temperature for TO-220FP

IC

30

201 f(kHz)

(A)

10

40

50

60

rectangular current shape,(duty cycle=0.5, Vcc= 400V Rg=10ohm,Vge=0/15V, Tj=175 °C)

Tc=80°C

Tc=100°C

AM17380v1 IC

4

01 f(kHz)

(A)

10

8

12

16

rectangular current shape,(duty cycle=0.5, Vcc= 400V Rg=10ohm,Vge=0/15V, Tj=175 °C)

Tc=80°C

Tc=100°C

AM17381v1

VCE(sat)

1.81.6

1.41.2

-50 0 TJ(°C)100

(V)

50

2.02.2

150

2.4

2.62.8

3.0

IC=15A

IC=30A

IC=60A

AM17366v1

VGE=15VVCE(sat)

1.81.61.41.2

10 20 IC(A)40

(V)

30

2.02.2

50

2.42.62.83.0

TJ=-40°C

VGE=15V

TJ=25°C

TJ=175°C3.2

1.

AM17367v1

IC

30

20

00 50 TCASE(°C)100

(A)

25 75

40

50

VGE>15VTJ<175°C

125 150

60

10

AM17363v1 IC

10

5

00 50 TCASE(°C)100

(A)

25 75

15

20

VGE>15VTJ<175°C

125 150

AM17378v1

Page 9: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

DocID022363 Rev 3 9/24

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Electrical characteristics

Figure 14. Forward bias safe operating area for TO-220, D²PAK and TO-247

Figure 15. Thermal impedance for TO-220, D²PAK and TO-247

Figure 16. Forward bias safe operating area for TO-220FP

Figure 17. Thermal impedance for TO-220FP

Figure 18. Gate charge vs. gate-emitter voltage Figure 19. Capacitance variations vs. VCE

IC

100

10

1 1 100 VCE(V)10

(A)

(single pulse TC=25°C,TJ<175°C, VGE=15V)

1µs

100µs

1ms

VCE(

sat)

limit

AM17370v1

10-5

10-4

10-3 10

-210

-1tp(s)

10-2

10-1

K

δ0

δ0.01

δ0.02

δ0.05

δ0.1

δ0.2

δ0.5

Zth=k Rthj-cδ=tp/t

tp

t

ZthTO2T_B

IC

100

10

1 1 100 VCE(V)10

(A)

(single pulse TC=25°C,TJ<175°C, VGE=15V)

1µs

100µs

1ms

AM17371v1

VCE(

sat)

limit

10-5

10-4

10-3 10

-210

-1tp(s)

10-2

10-1

K

10-3

δ0

δ0.01

δ0.02

δ0.05

δ0.1

δ0.2

δ0.05

Zth=k Rthj-cδ=tp/t

tp

t

100

ZthTO2T_B_FP

VGE

8

6

4

2

0 Qg(nC)100

(V)

50

10

VCC= 400V, IC=30A

12

14

16

0

AM17372v1C

1000

100

0.1 VCE(V)10

(pF)

110

Cies

Coes

Cres

AM17373v1

Page 10: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

10/24 DocID022363 Rev 3

Figure 20. Diode VF vs. forward current Figure 21. Switching losses vs. gate resistance

Figure 22. Switching losses vs. collector current

Figure 23. Switching losses vs temperature

Figure 24. Short circuit time & current vs. VGE

VF

1.8

1.6

1.4

1.215 20 IF(A)30

(V)

25

2.0

2.2

35

2.4

2.6 TJ=-40°C

TJ=25°C

TJ=175°C

40 45 50 55

AM17368v1E

1000

750

500

0 RG(Ω)20

(µJ)

10

VCC= 400V, VGE=15V

250

Eon

Eoff

4030

IC= 30A, TJ=175°C

1250

1500

AM17374v1

E

1200

800

400

15 IC(A)35

(µJ)

25

VCC= 400V, VGE=15V

0

Eon

Eoff

5545

RG= 10Ω, TJ=175°C

1600

2000

AM17375v1E

600

500

400

25 TJ(°C)75

(µJ)

50

VCC= 400V, VGE=15V

300

Eon

Eoff

125100

RG= 10Ω, IC=30A

700

800

150

AM17376v1

tsc

15

10

5

8 VGE(V)12

(µs)

10

VCC= 360V, RG= 10Ω

0

tSC

ISC

14

20

ISC(A)

150

100

500

200

300

250

350

400

450

AM17377v1

Page 11: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

DocID022363 Rev 3 11/24

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Test circuits

3 Test circuits

Figure 25. Test circuit for inductive load switching

Figure 26. Gate charge test circuit

Figure 27. Switching waveform Figure 28. Diode recovery time waveform

AM01504v1 AM01505v1

AM01506v1

90%

10%

90%

10%

VG

VCE

ICTd(on)

TonTr(Ion)

Td(off)

Toff

Tf

Tr(Voff)

Tcross

90%

10%

AM01507v1

IRRM

IF

di/dt

trr

ta tb

Qrr

IRRM

t

VF

dv/dt

Page 12: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

Package mechanical data STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

12/24 DocID022363 Rev 3

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.

Table 9. D²PAK (TO-263) mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

A1 0.03 0.23

b 0.70 0.93

b2 1.14 1.70

c 0.45 0.60

c2 1.23 1.36

D 8.95 9.35

D1 7.50

E 10 10.40

E1 8.50

e 2.54

e1 4.88 5.28

H 15 15.85

J1 2.49 2.69

L 2.29 2.79

L1 1.27 1.40

L2 1.30 1.75

R 0.4

V2 0° 8°

Page 13: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

DocID022363 Rev 3 13/24

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Package mechanical data

Figure 29. D²PAK (TO-263) drawing

0079457_T

Page 14: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

Package mechanical data STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

14/24 DocID022363 Rev 3

Table 10. TO-220FP mechanical data

Dim.mm

Min. Typ. Max.

A 4.4 4.6

B 2.5 2.7

D 2.5 2.75

E 0.45 0.7

F 0.75 1

F1 1.15 1.70

F2 1.15 1.70

G 4.95 5.2

G1 2.4 2.7

H 10 10.4

L2 16

L3 28.6 30.6

L4 9.8 10.6

L5 2.9 3.6

L6 15.9 16.4

L7 9 9.3

Dia 3 3.2

Page 15: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

DocID022363 Rev 3 15/24

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Package mechanical data

Figure 30. TO-220FP drawing

7012510_Rev_K_B

Page 16: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

Package mechanical data STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

16/24 DocID022363 Rev 3

Table 11. TO-220 type A mechanical data

Dim.mm

Min. Typ. Max.

A 4.40 4.60

b 0.61 0.88

b1 1.14 1.70

c 0.48 0.70

D 15.25 15.75

D1 1.27

E 10 10.40

e 2.40 2.70

e1 4.95 5.15

F 1.23 1.32

H1 6.20 6.60

J1 2.40 2.72

L 13 14

L1 3.50 3.93

L20 16.40

L30 28.90

∅P 3.75 3.85

Q 2.65 2.95

Page 17: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

DocID022363 Rev 3 17/24

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Package mechanical data

Figure 31. TO-220 type A drawing

0015988_typeA_Rev_S

Page 18: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

Package mechanical data STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

18/24 DocID022363 Rev 3

Table 12. TO-247 mechanical data

Dim.mm.

Min. Typ. Max.

A 4.85 5.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c 0.40 0.80

D 19.85 20.15

E 15.45 15.75

e 5.30 5.45 5.60

L 14.20 14.80

L1 3.70 4.30

L2 18.50

∅P 3.55 3.65

∅R 4.50 5.50

S 5.30 5.50 5.70

Page 19: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

DocID022363 Rev 3 19/24

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Package mechanical data

Figure 32. TO-247 drawing

0075325_G

Page 20: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

Packaging mechanical data STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

20/24 DocID022363 Rev 3

5 Packaging mechanical data

Figure 33. D²PAK footprint(a)

Table 13. D²PAK (TO-263) tape and reel mechanical data

Tape Reel

Dim.mm

Dim.mm

Min. Max. Min. Max.

A0 10.5 10.7 A 330

B0 15.7 15.9 B 1.5

D 1.5 1.6 C 12.8 13.2

D1 1.59 1.61 D 20.2

E 1.65 1.85 G 24.4 26.4

F 11.4 11.6 N 100

K0 4.8 5.0 T 30.4

P0 3.9 4.1

P1 11.9 12.1 Base qty 1000

P2 1.9 2.1 Bulk qty 1000

R 50

T 0.25 0.35

W 23.7 24.3

16.90

12.20

9.75

3.50

5.08

1.60

Footprint

Page 21: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

DocID022363 Rev 3 21/24

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Packaging mechanical data

Figure 34. Tape

a. All dimensions are in millimeters

P1A0 D1

P0

F

W

E

D

B0K0

T

User direction of feed

P2

10 pitches cumulativetolerance on tape +/- 0.2 mm

User direction of feed

R

Bending radius

Top covertape

AM08852v2

Page 22: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

Packaging mechanical data STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

22/24 DocID022363 Rev 3

Figure 35. Reel

A

D

B

Full radius G measured at hub

C

N

REEL DIMENSIONS

40mm min.

Access hole

At slot location

T

Tape slot in core fortape start 25 mm min.width

AM08851v2

Page 23: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

DocID022363 Rev 3 23/24

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF Revision history

6 Revision history

Table 14. Document revision history

Date Revision Changes

14-Oct-2011 1 Initial release.

03-Oct-2012 2Document status promoted from target specification ti preliminary data.

20-Mar-2013 3Document status promoted from preliminary data to production data.Added new root part number STGF30H60DF in TO-220FP package.

Added new root part number STGW30H60DF in TO-247 package.

Page 24: STGB30H60DF, STGF30H60DF, STGP30H60DF ...Electrical characteristics STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 6/24 DocID022363 Rev 3 Table 8. Collector-emitter diode Symbol

STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF

24/24 DocID022363 Rev 3

Please Read Carefully:

Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve theright to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at anytime, without notice.

All ST products are sold pursuant to ST’s terms and conditions of sale.

Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes noliability whatsoever relating to the choice, selection or use of the ST products and services described herein.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of thisdocument refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party productsor services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of suchthird party products or services or any intellectual property contained therein.

UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIEDWARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIEDWARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWSOF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.

ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USEIN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITHPRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS ORENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNEDFOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED INWRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE,AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS.PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THECORRESPONDING GOVERNMENTAL AGENCY.

Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately voidany warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, anyliability of ST.

ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.

The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.

© 2013 STMicroelectronics - All rights reserved

STMicroelectronics group of companies

Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America

www.st.com