Superior device quality attainable in R&D and production environments

> Best-in-class ion beam etch (IBE) system performance and capabilities

> Single module configuration with reduction in footprint compared to previous IBE generations

> Production-proven technology with large install base in use today

> Large applications database with dedicated process and technical expertise

> Veeco sales and service support infrastructure ensuring world class customer satisfaction

Lancer™Ion Beam Etch System for Next Generation MEMS and Sensor Manufacturing

Stand-alone ion beam etch system with low costof ownership and highest quality etch attributes

The Veeco Ion Beam Etch AdvantageIon beam etching is a proven technology for enabling thefabrication of advanced thin film devices in a high volumeproduction environment. However, both R&D and pilot lineproduction environments continue to innovate nextgeneration MEMS, Magnetic Sensors and Data Storagedevices that also rely on high performing etch systemswith best-in-industry performance specifications.

Applications flexibility:> Piezoelectric and electrode etching for RF MEMS

(SAW/BAW/FBAR)> Complex magnetic stacks with mixed metal-dielectric materials

(AMR, GMR, TMR/ MRAM)> Reactive etching capability for III/V materials (HEMT transistors,

power electronics)> Off-angle ion beam smoothing> Low energy etch for reducing magnetic damage of devices> General noble metals and materials often difficult to etch and

control with traditional dry etch techniques

Patented 350EX Tunable Source for high performance etching and milling:> Improved Etch Depth Control (unmatched 200mm U%)> Low Magnetic Damage (stable energy down to 50eV)> Improved CD Uniformity (highly collimated beam, <4deg half

angle)> Additional U% tuning knob > Ability to adjust U% with grid life(extends MTBM for grids)> 2-5x improvement in U% at 200mm over the standard RF350

source> Ability to ‘tune’ etch profile to compensate for concave/convex

deposition profiles> Typical performance

• <2% 3s, 0-80°, 100-400V, 75k mins between rebuilds• <2.5%, 3s, 0-80°, 400-850V, 15k mins between rebuilds

Key Attributes of Ion Beam Etching (IBE):>Material flexibility

• Can etch any material - no chemistry dependence• Production proven method for etching complex materials and

structures>Shape control

• Directional beam with etch angle control for device shape / wallangle control

• Veeco-developed high collimation source> Low ion damage

• Low energy capability (down to 50V)> Independent beam current and voltage control> Isolation of source from substrate

Lancer IBE Configuration Options:> Front End/Substrate Handling Configurations:

• Automated Single wafer loader• Automated 25 wafer cassette loader

> Ion Source Options:• Standard RF-350 (RF-ICP)• Tunable 350EX

> Substrate Fixture configurations:• System supports up to 8” (200mm) wafers

• Backside gas cooled Mechanical clamped chuck orelectrostatic chuck options available.

> End Point Detection (EPD) Capability:• Optical emission spectroscopy (OES)• Secondary Ion Mass Spectrometer (SIMS) • Integration with Veeco software

In situ SIMS signal during IBE of a typical GMR

RF350EX Tunable ion Source RF350 Standard ion source

Single wafer loaderAutomated cassette loader

Tool DimensionProcess

SiO2 Rotational Etch Uniformity (at -45°)

Wafer-to-Wafer RepeatabilityEtch Rate (nm/min)

NiFe

SiO2, Pt, PZT

Au

Beam Divergence

Process Angle RangeProcess Angle AccuracyBase PressureProcess Pressure Range

HWFixture Rotation SpeedSubstrate Cooling

SW

Tool Software

SECSIIGEM

Standard 350 Ion Source* 350EX Tunable Ion Source

(Up to 200mm or 8” round wafers)

2.7m x 1.1m x 2.0m

< 4% 3s*< 2% 3s

< 1% 3s

10 – 90* 5 – 7510 – 120* 5 – 10010 – 300* 5 – 250

<6°* <4°

+90° to -80°±0.5°

≤ 4.0e-7 Torr0.2 – 0.5m Torr

Static, sweep, or full rotation (up to 20 RPM)Backside He gas (<100deg C)

Supports full automation and offers production proven HMI

Yes

Lancer General Specifications

IBE System Dimensions

Front view Side view

Illustrations of unfavorable etch geometry:(a) Fencing due to re-deposition; (b) Faceting; (c) Trenching; (d) Footing.

SEM image of Au features after (a) first step and (b) secondstep of a two-step etching process.

Veeco Instruments Inc.1 Terminal DrivePlainview, NY 11803(516) 349-8300

Learn more at www.veeco.comor call 1.888.24.VEECO©2017 Veeco Instruments Inc. All rights reserved.

Process End Point Detection, Monitoring and ControlWhen patterning an electrode, it is important to determine when the metallayer or another material has been completely removed. Accuratedetermination of this removal is critical in order to minimize the amount ofover-etching into the underlying layer and to account for any variations in themetal layer thickness. Optical emission spectroscopy (OES) or secondary ionmass spectroscopy (SIMS) endpoint detectors can be used in conjunctionwith the Veeco ion beam etching system to accomplish this.

An optical emission (OES) endpoint detector monitors optical fluorescenceemissions from the etched materials to determine the presence or absenceof a particular material. Each element has characteristic fluorescencewavelengths, and common noble metals exhibit emissions that are strongenough to be used as reliable endpoint signals. The table at right containscharacteristic wavelengths used to detect common noble metals. Either OESor SIMS can be optionally integrated with the Lancer IBE system.

For the first step, an angle between 30° and 55° is used to clear the majorityof the metal layer. Using an off-normal angle suppresses faceting, andprevents the accumulation of re-deposition on the sides of the mask andfeature by providing a significant amount of sidewall etching. SEM images ofa gold feature after this first step are shown at right. There is a significantsecondary wall angle left in the bottom half of the feature and no visible re-deposition near the top of the feature. The second etch step is performed atan angle between 5° and 25°. This near-normal incidence angle is used toclear the metal material forming the “foot” at the bottom of the feature.Typically, the duration of this step is approximately 30% of the duration ofthe first step. The feature now has nearly vertical sidewalls with a singleangle along the entire depth of the feature. The Lancer IBE system helpsachieve superior levels of etching process control.

Process Control of Sidewall EtchingA successful electrode etching process must be able to preserve the criticaldimensions of the etched features and ensure nearly vertical feature sidewalls.Re-deposition, faceting, trenching and footing (as illustrated at right) should allbe minimized. In order to accomplish this, a two-step process, using twodifferent ion beam angles of incidence, is frequently used.

Sample optical omission trace while etching through Ptelectrodes and ferrelectric (Ti signal) stack

Veeco’s Ion Beam Etch uniformity over wide angle andenergy range

Ion Beam Etch UniformitySilicon-based magnetic sensors are processed on wafers up to 200mm indiameter. The sensor element critical dimensions, and the underlayer over-etchdepth, are required to be uniform across the wafer area. This necessitates etchuniformity over a wide range of incidence angles over areas up to 200mm. Theplot at right presents etch uniformity over a 200mm wafer processed usingVeeco’s advanced ion source, at a range of energies, even down to 100V beamenergy. The source has been specifically designed to meet the low energy andlow etch rate requirements of AMR, GMR and TMR film stacks. The Lancer IBEsystem incorporates this industry proven ion source.