24
Snubbers - 1 W.P. Robbins 1 Snubber Circuits Lecture Notes William P. Robbins Dept. of Electrical and Computer Engineering University of Minnesota Outline A. Overview of Snubber Circuits B. Diode Snubbers C. Turn-off Snubbers D. Overvoltage Snubbers E. Turn-on Snubbers F. Thyristor Snubbers

Snubbers circuits.hhpdf

Embed Size (px)

DESCRIPTION

jjj

Citation preview

Page 1: Snubbers circuits.hhpdf

Snubbers - 1�W.P. Robbins 1

Snubber Circuits

Lecture Notes

William P. Robbins

Dept. of Electrical and Computer Engineering

University of Minnesota

Outline

A. Overview of Snubber Circuits

B. Diode Snubbers

C. Turn-off Snubbers

D. Overvoltage Snubbers

E. Turn-on Snubbers

F. Thyristor Snubbers

Page 2: Snubbers circuits.hhpdf

Snubbers - 2�W.P. Robbins

Overview of Snubber Circuits for Hard-Switched Converters

Function: Protect semiconductor devices by:

• Limiting device voltages during turn-off transients

• Limiting device currents during turn-on transients

• Limiting the rate-of-rise (di/dt) of currents through the semiconductor device at device turn-on

• Limiting the rate-of-rise (dv/dt) of voltages across the semiconductor device at device turn-off

• Shaping the switching trajectory of the device as it turns on/off

Types of Snubber Circuits

1. Unpolarized series R-C snubbers • Used to protect diodes and thyristors

2. Polarized R-C snubbers • Used as turn-off snubbers to shape the turn-on switching trajectory of controlled switches. • Used as overvoltage snubbers to clamp voltages

applied to controlled switches to safe values. • Limit dv/dt during device turn-off

3. Polarized L-R snubbers • Used as turn-on snubbers to shape the turn-off switching trajectory of controlled switches. • Limit di/dt during device turn-on

Page 3: Snubbers circuits.hhpdf

Snubbers - 3�W.P. Robbins

Need for Diode Snubber Circuit

• Diode breakdown if Vd + LσdiLσdt > BVBD

-

+

Df

Rs

Cs

Vd

I o

Sw

L = stray inductanceσ

S closes at t = 0w R - C = snubber circuits s

I rr

i Dfd

d t

VdLσ

=Io

t

tVd

i (t)Df

v (t)Df

• Diode voltage without snubber

dd t

Lσi Lσ

Page 4: Snubbers circuits.hhpdf

Snubbers - 4�W.P. Robbins

Equivalent Circuits for Diode Snubber

Rs

+

-

Vdanodecathode Diode

snap-off

Cs

+

-

Vd

v Cs+

-

• R = 0s• v = -v Cs Df

• Simplified snubber - the capacitive snubber

• Worst case assumption- diode snaps off instantaneously at end of diode recovery

i Df t

• Governing equation - d2vCsdt2

+ vCsLσCs

= Vd

 LσCs

• Boundary conditions - vCs(0+) = 0 and iLσ(0+) = Irr

Page 5: Snubbers circuits.hhpdf

Snubbers - 5�W.P. Robbins 5

Performance of Capacitive Snubber

• vCs(t) = Vd - Vd cos(ωot) + Vd Cbase

Cs sin(ωot)

• ωo = 1

LσCs ; Cbase = Lσ

Irr

Vd

2

• Vcs,max = Vd

1 +  1 + Cbase

Cs 

0

1

2

3

4

5

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

d

VCs,max

V

C

Cs

base

Page 6: Snubbers circuits.hhpdf

Snubbers - 6�W.P. Robbins

Effect of Adding Snubber Resistance

Snubber Equivalent Circuit

VdfVd

(t) = - 1 - e-αt

η cos(φ) sin(ωat - φ + ζ) ; Rs ≤ 2 Rb

ωa = ωo 1- (α/ ωo)2 ; α = Rs

2 Lσ ; ωo =

1LσCs

; φ = tan-1

(2-x) η

4 - ηx2

η = CsCb

; x = RsRb

; Rb = VdIrr

; Cb = Lσ [Irr]

2

Vd2 ; ζ = tan-1(α/ωa)

• Governing equation Lσ d2i

dt2 + Rs

didt +

iCs

= 0

• Boundary conditions

i(0+) = Irr and di(0+)

dt = Vd - IrrRs

Lσ -

VdCs

R s

+

+

-

v (t)Df

i(t)

Diode voltage as a function of time

Page 7: Snubbers circuits.hhpdf

Snubbers - 7�W.P. Robbins

Performance of R-C Snubber

• At t = tm vDf(t) = Vmax

• tm = tan-1(ωa/α)

ωa + φ - ξωa ≥ 0

•Vmax

Vd = 1 + 1 + η-1 - x exp(-αtm)

• η = Cs

Cbase and x =

RsRbase

• Cbase = Ls Irr

2

Vd2 and Rbase =

VdIrr

0

1

2

3

0 1 2

C = Cs base

R Is rrVd

V

Vmax

d

R sR base

R s,optR base

= 1.3

Page 8: Snubbers circuits.hhpdf

Snubbers - 8�W.P. Robbins 8

Diode Snubber Design Nomogram

0

0

00

00 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0

0

1

2

3

0 1 2 3

R

R s,op

base

V

Vmax

d s,optfor R = Rs

L I /2s r r2

WR

Wtot

L I /2s r r2

base/ CCs

Page 9: Snubbers circuits.hhpdf

Snubbers - 9�W.P. Robbins

Need for Snubbers with Controlled Switches

t o t1

t3 t4t 5 t 6

Lσdidt

Lσdidt

VdIoIo

vsw

i sw

I rrI o

Vd

L 1 L 2

L 3Sw

vsw+

-

i sw

L1 L 2 L 3• , , = stray inductances

L1 L 2 L3Lσ = ++•

turn-on

turn-off

idealized switching loci

t ot1

t3t4

t 5t 6

Vd

i sw

vsw

• Overvoltage at turn-off due to stray inductance

• Overcurrent at turn-on due to diode reverse recovery

Step-down converter Switch current and voltage waveforms

Switching trajectory of switch

Page 10: Snubbers circuits.hhpdf

Snubbers - 10�W.P. Robbins

Turn-off Snubber for Controlled Switches

Df

Ds

C s

R s

Vd

I o+

-

i DF

iC s

Turn-off snubber

Sw

C s

I o - iVd

i s w

D fI o

s w

Step-down converter with turn-off snubber

Equivalent circuit during switch turn-off. • Simplifying assumptions

1. No stray inductance.

2. isw(t) = Io(1 - t/tfi)

3. isw(t) uneffected by snubber circuit.

Page 11: Snubbers circuits.hhpdf

Snubbers - 11�W.P. Robbins

iDf

i C s

Vd

vCs

C = Cs s1

t f i

i s w

iDfiDf

I o

t f it f i

i s wi s w

C < Cs s 1 C > Cs s1

Turn-off Snubber Operation

• Capacitor voltage and current for 0 < t < tfi iCs(t) = Iottfi

and v (t) = Cs

I to2

2C ts fi

• For Cs = Cs1, vCs = Vd at t = tfi yielding Cs1 = Iotfi2Vd

Circuit waveforms for varying values of Cs

Page 12: Snubbers circuits.hhpdf

Snubbers - 12�W.P. Robbins

I oDf

C s

I o

R sVd

DsSw

t r rt r i +

i s w

t r r

0

discharge of C s

t r i t 2

VdI o

vs w

vs w

I r r

I o

I r r

iD f

t r r

VdR si s w

Benefits of Snubber Resistance at Switch Turn-on

• Ds shorts out Rs during Sw turn-off.

• During Sw turn-on, Ds reverse-biased and

Cs discharges thru Rs.

• Turn-on with Rs = 0

• Energy stored on Cs dissipated in Sw.

• Extra energy dissipation in Sw because of lengthened voltage fall time.

• Turn-on with Rs > 0

• Energy stored on Cs dissipated in Rs rather than in Sw.

• Voltage fall time kept quite short.

Page 13: Snubbers circuits.hhpdf

Snubbers - 13�W.P. Robbins

Effect of Turn-off Snubber Capacitance

Cs < Cs1

Cs = Cs1

Cs > Cs1

I o

Vdvs w

i s w

RBSOA

Switching trajectory

0

0.2

0.4

0.6

0.8

1

0 0.2 0.4 0.6 0.8 1 1.2 1.4

WT / W base

WR / Wbase

Wtotal / W base

Cs / Cs1

W

W

Energy dissipation

WR = dissipation in resistor

WT = dissipation in switch Sw

Cs1 = Iotfi2Vd

Wtotal = WR + WT

Wbase = 0.5 VdIotfi

Page 14: Snubbers circuits.hhpdf

Snubbers - 14�W.P. Robbins

Turn-off Snubber Design Procedure

Selection of Rs

• Limit icap(0+) = VdRs

< Irr

• Usually designer specifies Irr < 0.2 Io so VdRs

= 0.2 Io

Snubber recovery time (BJT in on-state)

• Capacitor voltage = Vd exp(-t/RsCs)

• Time for vCs to drop to 0.1Vd is 2.3 RsCs

• BJT must remain on for a time of 2.3 RsCs

Selection of Cs

• Minimize energy dissipation (WT) in BJT at turn-on

• Minimize WR + WT

• Keep switching locus within RBSOA

• Reasonable value is Cs = Cs1

Page 15: Snubbers circuits.hhpdf

Snubbers - 15�W.P. Robbins

Overvoltage Snubber

+

-

Vd

L σ

Df I oRov

CovDovSw

• Step-down converter with overvoltage snubber comprised of Dov, Cov, and Rov.

• Overvoltage snubber limits overvoltage (due to stray � Inductance) across Sw as it

turns off.

o tfi

VdI o

kVdi sw

vsw

• kVd = LσdiLσdt = Lσ

Iotfi

• Lσ = kVdtfi

Io

• Switch Sw waveforms without overvoltage snubber

• tfi = switch current fall time ; kVd = overvoltage on Sw

Page 16: Snubbers circuits.hhpdf

Snubbers - 16�W.P. Robbins

Operation of Overvoltage Snubber

+

-

Vd

L σRov

Cov

Dov

i Lσ

vCov

+

-

• Dov on for 0 < t < π LσCov

2

• tfi << π LσCov

2

• Dov,Cov provide alternate path for inductor current as Sw turns off.

• Switch current can fall to zero much faster than Ls current.

• Df forced to be on (approximating a short ckt) by Io after Swis off.

Page 17: Snubbers circuits.hhpdf

Snubbers - 17�W.P. Robbins

Overvoltage Snubber Design

• Limit vsw,max to 0.1Vd

= IoLοCov

• Using L = kVd tfi

Io in above equation yields

• Cov = kVdtfiIo

2

Io(0.1Vd)2 =

100k tfi Io Vd

• Cov = 200 k Cs1 where Cs1 = tfiIo 2Vd

which is used

in turn-off snubber • Choose Rov so that the transient recovery of Cov is critically damped so that ringing is minimized. For a critically damped

circuit Q = 1 =

ωoLσRov

=LσCov

1Rov

.

Rov =0.1VdIo

• Check that the recovery time of Cov (2.3L /Rov) is less than off-time duration, toff, of the switch Sw. • With choice of Rov from above, trecovery is trecovery = 23 k tf i

Page 18: Snubbers circuits.hhpdf

Snubbers - 18�W.P. Robbins

Turn-on Snubber

Vd

+

-

LsDLs

Df

R Ls

Io

Sw

Vd

-

LsDLs

Df R Ls Io

Sw

Df

+

Snubber circuit

Step-down converter with turn-on snubber

• Snubber reduces Vsw at switch turn-on due drop across inductor Ls.

• Will limit rate-of-rise of switch current if Ls is sufficiently large.

swi

vswVd

I o

L sdi swdt

Without snubber

With snubber

Switching trajectory with and without turn-on snubber.

Page 19: Snubbers circuits.hhpdf

Snubbers - 19�W.P. Robbins

Turn-on Snubber Operating Waveforms

tri t rr

rrI

I oVd

vsw

i sw

•diswdt controlled by switch Sw

and drive circuit.

• Δvsw = LsIotri

I o

Vd

vsw

i sw

rrIreduced

t ≈ > t + t IL os

Vdon ri rr

Large values of snubber inductance (Ls > Ls1)

Small values of snubber inductance (Ls < Ls1)

•diswdt limited by circuit to

VdLs

< Iotri

• Ls1 = Vdtri

Io

• Irr reduced when Ls > Ls1 because Irr proportional to diswdt

Page 20: Snubbers circuits.hhpdf

Snubbers - 20�W.P. Robbins

Turn-on Snubber Recovery at Switch Turn-off

Vd

+

-

LsDLs

Df

R Ls

Io

Sw

vsw

i sw Vd

I o R Ls

I o

t rv

IoRLsexp(-R Lst/Ls)

• Assume switch current fall timetri = 0.

• Inductor current must discharge thru DLs- RLs series segment.

• Overvoltage smaller if tfi smaller.

• Time of 2.3 Ls/RLs required for inductor current to decay to 0.1 Io

• Off-time of switch must be > 2.3 Ls/RLs

• Switch waveforms at turn-off with turn-on snubber in circuit.

Page 21: Snubbers circuits.hhpdf

Snubbers - 21�W.P. Robbins

Turn-on Snubber Design Trade-offs

Selection of inductor

• Larger Ls decreases energy dissipation in switch at turn-on

• Wsw = WB (1 + Irr/Io)2 [1 - Ls/Ls1]• WB = VdIotfi/2 and Ls1 = Vdtfi/Io• Ls > Ls1 Wsw = 0

• Larger Ls increases energy dissipation in RLs• WR = WB Ls / Ls1

• Ls > Ls1 reduces magnitude of reverse recovery current Irr

• Inductor must carry current Io when switch is on - makes inductor expensive and hence turn-on snubber seldom used

Selection of resistor RLs

• Smaller values of RLs reduce switch overvoltage Io RLs at turn-off

• Limiting overvoltage to 0.1Vd yields RLs = 0.1 Vd/Io

• Larger values of RLs shortens minimum switch off-time of 2.3 Ls/RLs

Page 22: Snubbers circuits.hhpdf

Snubbers - 22�W.P. Robbins

id

1 3 5

24 6

+

+

+-

-

-

van

vbn

R s

Cs

A

B

C

P

vcn

Thyristor Snubber Circuit

• van(t) = Vssin(ωt), vbn(t) = Vssin(ωt - 120°),vcn(t) = Vssin(ωt - 240°)

α

vanvbn = vba

vanvbn

ω t1=v LL

Phase-to-neutral waveforms

• vLL(t) = 3 Vssin(ωt - 60°)

• Maximum rms line-to-line voltage VLL = 32 Vs

3-phase thyristor circuit with snubbers

Page 23: Snubbers circuits.hhpdf

Snubbers - 23�W.P. Robbins

Cs

R s

Vba( )ω t1T (on)3

T afterrecovery1

iT1

P

A

2 L σ

i Lσ

+

-

Equivalent circuit after T1 reverse recovery

• Trigger angle α = 90° so that vLL(t) = maximum = 2 VLL

• Reverse recovery time trr << period of ac waveform so that

vLL(t) equals a constant value of vba(ωt1) = 2 VLL

• Worst case stray inductance Lσ gives rise to reactance equal

to or less than 5% of line impedance.

• Line impedance = Vs2Ia1

= 2VLL6Ia1

= VLL3Ia1

where Ia1 = rms value of fundamental component of theline current.

• ωLσ = 0.05 VLL3Ia1

Assumptions

Equivalent Circuit for SCR Snubber Calculations

Page 24: Snubbers circuits.hhpdf

Snubbers - 24�W.P. Robbins

• Use same design as for diode snubber but adapt the formulas to the thyristor circuit notation

• Snubber capacitor Cs = Cbase = Lσ

Irr

Vd

2

• From snubber equivalent circuit 2 Lσ diLσdt = 2 VLL

• Irr = diLσdt trr =

2VLL2Lσ

trr = 2VLL

2 0.05 VLL

3 Ia1ω

trr = 25 ωIa1trr

• Vd = 2 VLL

• Cs = Cbase = 0.05 VLL

3 Ia1ω

25 ωIa1trr

  2VLL 2

= 8.7 ωIa1trr

VLL

• Snubber resistance Rs = 1.3 Rbase = 1.3 VdIrr

• Rs = 1.3 2VLL

25ωIa1trr =

0.07 VLL ωIa1trr

• Energy dissipated per cycle in snubber resistance = WR

• WR = LσIrr

2

2 + CsVd

2

2 = 18 ω Ia1 VLL(trr)2

Component Values for Thyristor Snubber