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Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.1
Lecture 6Analysis of electrostatically actuated micro devicesSome features of nonlinearly coupled electrostatic and elasto-static and dynamic governing equations of electrostatic MEMS.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.2
Contents• Why is electrostatic actuation popular in MEMS?• Nonlinearity explained with examples• Computing the electrostatic force
– Parallel-plate capacitor– General
• Effects of nonlinearity– Pull-in, pull-up, hysteresis, etc.
• Squeezed-film damping– Iso-thermal Reynolds equation
• Design challenges– Shape optimization– Topology optimization?
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.3
Why is electrostatic actuation popular in MEMS?
• Ease of fabrication• Ease of actuation• Energy-efficient• High frequency (MHz and even GHz)• Scalability• Easy sensing mechanism (capacitance-
based)Some inconveniences-- high voltages for large displacements-- small forces (they move themselves mostly; suited for sensors)-- charging and stiction
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.4
Micro-mechanical filters
C.T.-C. Nguyen, “Micromechanical Components for Miniaturized Low-Power Communications,” Proc. 1999 IEEE MTT-S Int. Microwave Symposium, RF-MEMS Workshop, Anaheim, CA, June 18, 1999, pp. 48-77.
Electrostatic actuation and sensing is the key to this.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.5
Why micro-mechanical filters?
Why mechanical filters?
Narrow bandwidth (high selectivity)
Low loss (high Q, 10,000 to 25,000)
Good stability with temperature variation
Passive (no power and clock required)
Why micromechanical filters?
Better performance and cost
Low power consumption
Smaller size (more applications: e.g., cellular phones)
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.6
Working principle of mechanical filters
FrequencyT
rans
mis
sion
(d
B)
Tra
nsm
issi
on (
dB
)
Frequency
tF sin
tF sin
tFkxxbxm sin
m
b
k
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.7
Schematics of Nguyen’s micro-mechanical filter and a high-Q disk resonators
J. R. Clark, W.-T. Hsu, and C.T.-C. Nguyen, “Measurement Techniques for Capacitively-transduced VHF-to-UHF Micromechanical Resonators, Proc. of Transducers, 2001, Munich, June 10-14, 2001, pp. 1118-1121.
Side viewContour disk resonator“Free-free” beam resonator
Top view
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.8
A bi-directional pumpV
Diaphragm
Passive inlet valve Passive outlet valve
tV sin
Frequency
Flow
rate
R. Zengerle, J. Ulrich, S. Kluge, M. Richter, and A. Richter, “A Bidirectional Silicon Micropump”, Sensors and Actuators, A 50, 1995, pp. 81-86.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.9
Electrostatic comb-drive—the prime mover for MEMS today
anchorShuttlemass
Folded-beam suspension Movingcombs
Fixedcombs
Misaligned parallel-plate capacitor
W. C. Tang, T.-C. H. Nguyen, M. W. Judy and R. T. Howe, “Electrostatic-comb drive of lateral polysilicon resonators,” Sensors and Actuators, Vol. A 21-23, pp. 328 – 381, 1990.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.10
Computing the electrostatic force in the parallel-plate capacitor
22
022
0
20
20
202
2
1
2
1
2
1
2
1
)(
2
1
2
1
Vg
AV
g
wl
g
EF
Vg
l
w
EF
Vg
w
l
EF
Vg
wlCVE
eg
ew
el
e
l
wg
Electrostatic energy
Force in the length direction
Force in the width direction
Force in the gap direction
0 = permittivity of free spaceV= applied voltageC= capacitance
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.11
Computing the electrostatic force in general 3-D problems
Electric potential = Electric field =
n
Fˆ
2
1 2
eElectrostatic force = Dieletric constant of the intervening medium
Charge density = charge per unit area
Surface normal
22 V
Conductor 1Conductor 2
It is a surface force (traction).
11 V
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.12
Computing the electrostatic force (contd.)
42 02
On the conductorsIn the intervening medium
Plus, potentials on the conductors are specified.
Governing equations to solve for the charge density in the differential equation form:
This is suited for FEM but sufficient intervening medium also needs to be meshed along with the interior of the conductors.
''
)()( dS
xx
xx
Surfaces
Governing equations to solve for the charge density in the integral equation form:
This is suited for BEM because only conductor boundaries need to be meshed.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.13
Static equilibrium of an elastic structure under electrostatic force
V
+ ++
++
+
++++
+
--
--
--
- -
--
-
-
++ ++++
+
++
++
--- - - - -
--
--
- Charge distribution causes electrostatic force of attraction between conductors
Electrostatic force deforms conductors
Deformation of conductors causes charges to re-distribute
0
2 ˆ
2
1
n
F eElectrostatic force =
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.14
Coupled governing equations of electro- and elasto- statics
conductorsalloffor''
)()( sdS
xx
xx
Surfaces
0
2 ˆ
2
1
n
f te
T
u
te
uuε
εEσ
uu
fnσ
σ
2
1
:
on
onˆ
in everywhere0
0
A self-consistent solution is needed!
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.15
Start with 1-dof lumped model…
V
2
20
0
2
1V
xg
Akx
2
20
0
2
1V
xg
A
kx
x
k
0g
A
0= plate area
= permittivity of free space
Static equilibrium
A cubic equation!
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.16
Lumped 1-dof modeling of coupled electro- and elasto- static behavior
2
20
0
2
1V
xg
Akx
kx
2
20
0
2
1V
xg
A
x
Forc
es
Three solutions
Two stable; one unstable; And, one infeasible
x
Pote
nti
al en
erg
y
2
0
02
2
1
2
1V
xg
AkxPE
Potential energyS
tab
le
Sta
ble
Unst
able
0g
0)(
x
PE
30
20
2
2
)(
)(
xg
AVk
x
PE
Use to test stability.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.17
Pull-in phenomenonPote
nti
al en
erg
y
3/0g
1V 2V< 3V<
A
xgkV
xg
AVk
x
PE
0
302
30
20
2
2 )(0
)(
)(
32
)(
2
1 0022
0
0 gx
xgkV
xg
Akx
Condition for critical stability
3/2 0g inpullV
x
x
A
gkV inpull
0
3
27
80
inpullV
0g
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.18
With a dielectric layer: pull-up and hysteresis
x0g
dt
Dielectric layer
3
0inpull 027
8
r
dtgA
kV
uppullV
2
0up pull 0
2
r
dtgA
kV
inpullV
x
V
0gPull-up voltage is found by equating the forces of spring and electrostatics at .
0gx Gilbert, J. R., Ananthasuresh, G. K., and Senturia, S. D., “3-D Modeling and Simulation of Contact Problems and Hysteresis in Coupled Electromechanics,” presented at the IEEE-MEMS-96 Workshop, San Diego, CA, Feb. 11-15, 1996.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.19
V
+ + + + + + + + +
V++ +
++ ++
++
Distributed modeling of the electrostatically actuated beam
0)(2 2
0
20
4
4
ug
wV
dx
udEI
Include the effects of residual stress as well:
0)(2 2
0
20
2
2
04
4
ug
wV
dx
udwt
dx
udEI
FEM or FDM could be used to solve the nonlinear equation:
Finite element method Finite difference method
A correction due to fringing field (edge and corner effects) is also included.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.20
Solving the general 3-D problem
Boundary element method for the integral equation of electrostatics
''
)()( dS
xx
xx
Surfaces
ipanel k
n
i i
ik xx
da
a
qp
'
'
1
Potential on kth panel
Charge on kth panel
Area of kth panel
Discretize the boundary surfaces into n panels.
qPp qpC
Assemble to get:
Finite element method for the differential equation of elastostatics
kkk aqnf ˆ
)/(
0
2
kpanelon
eFUK
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.21
Solution approachesRelaxation
-- iterate between the elastic and electrostatic domains.-- converges except in the vicinity of pull-in voltage; but slow.
Surface Newton-- compute sensitivities of surface nodes.-- use a Newton step to update those nodes.-- then, re-compute electrostatic force and internal deformations.
Direct Newton-- compute all derivatives to update charges and deformations.
E
M
EE
MM
R
R
q
U
q
R
U
Rq
R
U
R Residuals in mechanical and electrical domains
For example, see: G. Li and N. R. Aluru, “Linear, non-linear, and mixed-regime analysis of electrostatic MEMS,” Sensors and Actuators, A 91, 2001, pp. 279-291, and references therein.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.22
What about dynamic behavior?Pote
nti
al en
erg
y
in-pulldynamicV = dynamic pull-in voltage
x
0g
tV
20
20
)(2 xg
AVkxxm
0)(2 2
0
20
4
4
ug
wV
dx
udEIuwt
Lumped 1-dof model
Beam model
Frequency =
tVtVVVtVVV acacdcdcacdc 22222 sinsin2)sin(
Will contain a term!2So, the response will show two resonance at two frequencies.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.23
Damping: squeezed film effects
V Squeezed-film damping
Use isothermal, compressible, narrow gap Reynolds equation to model the film of air beneath the beam/plate/membrane.It is widely used in lubrication theory.By analyzing this equation, we can extract the essence of damping as a lumped parameter – the so called “macromodeling”.
20
20
)(2 xg
AVkxxbxm
0)(2 2
0
20
4
4
ug
wV
dx
udEIubuwt
Lumped 1-dof model Beam model
How do you obtain ?b
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.24
Modeling squeezed film effects: isothermal Reynolds equation
),(),(),(12
1),(),( 3 yxpyxgyxpt
yxgyxp
Pressure distribution in the 2-D x-y plane Gap varies in the x-y plane for a deformable
structure (beam,plate, membrane)
Viscosity of air
For lumped 1-dof modeling, we have a rigid plate. So, gdoes not depend on . ),( yx
),(2
1
12),(),(
12
),( 2233
yxpg
yxpyxpg
t
gyxp
Assume further that pressure distribution is the same along the length of the plate so that it becomes a one dimensional problem.
)(2
1
12
)( 223
ypg
t
gyp
xy
Assumed pressure distribution
S. D. Senturia, Microsystems Design, Kluwer, 2001.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.25
Behavior with small displacements
)(2
1
12
)( 223
ypg
t
gyp
Linearize around :),( 00 gp
gggppp 00
02
2
20
20
2
2
20
20 ˆ
12
ˆˆ
12
ˆ
g
gp
w
pg
t
gp
w
pg
t
p
Separation of spatial and temporal components:teptp )(~),(ˆ
teg
gp
p
w
pg
0
2
2
20
20 ~
~
12
Also, use non-dimensional variables:00
ˆ,ˆ,g
gg
p
pp
w
y
width
Assume a sudden velocity impulse to the plate. Then, for t > 0, this term is zero. (with displacement )0xx
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.26
Behavior with small displacements (contd.)
nnnn BAppp
w
pgcossin~0~
~
12 2
2
20
20
020
212
pg
w nn
Boundary conditions and velocity-impulse assumption give:
n
tn
nn
nenng
xA
nw
npgn
odd0
0
2
220
20
)sin(4
,...5,3,1;12
;
Force on the plate = n
tsq
neg
xwlpdtpwlptf
odd22
0
00
1
00 n
8),(ˆ)(
Take the Laplace transform (continued on the next slide).
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.27
Finally, getting to lumped approximation…
)(1
1
n
196
1
1
n
196)(
odd43
04
3
0odd
430
4
3
ssXsg
wlx
sg
wlsF
n
n
n
n
sq
)(1
)(1
196)(
30
4
3
ssXs
bssX
sg
wlsF
cc
sq
For only.1n
30
4
396
g
wlb
20
20
2
12 w
pgc
Damping coefficient
Cut-off frequency
Transfer function for general displacement input!
bR
cbC 1
)(),( sXtx )(),( sFtf sqsq
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.28
What does it mean mechanically?
x
k
x0
208
g
wpbk csq
m
30
4
396
g
wlb
Thus, squeezed film effect creates two effects:Viscous damping + “air-spring”
Further analysis indicates that at low frequencies, damping dominates, and air-spring at high frequencies.See S. D. Senturia, Microsystems Design, Kluwer, 2001, for details.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.29
Move up to beam modeling…
),,()},({),,(12
1)},({),,( 30
0 tyxptxugtyxpt
txugtyxp
0)},({2
)(),(),,(
),(2
0
20
4
42/
2/2
txug
twV
dx
txudEIdytyxp
t
txuwt
w
w
Note that this is still a parallel-plate approxmation!
Solve these two coupled equations.
An approachUse FDM for pressure equation and FEM or FDM for discretizing the dynamic equation, and integrate in time using the Runge-Kutta method.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.30
A typical responseThe transverse deflection of the mid-point of a fixed-fixed beam under (Vdc+Vac) voltage input under the squeezed film effect:
pointmidu
t
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.31
What about this problem now?
VDiaphragm
Passive inlet valve Passive outlet valve
tV sin
Frequency
Flow
rate
A problem involving three energy domains that are strongly coupled. Furthermore, the fluids part is non-trivial.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.32
Shape optimization: example of electrostatic comb-drive
Straight-finger comb-drive
Variable force comb-drives with curved stationary fingers
Linear
Quadratic
CubicNeed to compensate the non-linearities caused by the folded-beam suspension.
(Figures provided by W. Ye)
(Made with Cornell’s SCREAM process)
(Ye and Mukherjee, Cornell)
W. Ye and S. Mukherjee, “Optimal design of three-dimensional MEMS with applications to electrostatic comb drives,” International Journal for Numerical Methods in Engineering, Vol. 45, pp. 175-194, 1999.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.33
Synthesis with electrostatic actuation
(Ye and Mukherjee, Cornell)
(Figures provided by W. Ye)
Shape-optimized comb-fingers to compensate suspension’s nonlinearities.
(Made with Cornell’s SCREAM process) Ye and Mukherjee used BEM for discretizing both the electrostatic and elasto-static governing equations.
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.34
How about topology optimization?
Introducing new holes (i.e., topology variation) certainly helps elastic behavior but it complicates the electrostatics problem.
To use the “smoothening” (between 0 and 1) approach, every spatial point should be able to assume the states of empty space, a conductor, or a dielectric.
Fringing field effect becomes harder to deal with as new holes get introduced.
Can be done but there are issues to be resolved…
Stiff Structures, Compliant Mechanisms, and MEMS: A short course offered at IISc, Bangalore, India. Aug.-Sep., 2003. G. K. Ananthasuresh Slide 6.35
Main points
• Electrostatic force is THE most widely used actuation in MEMS – for many good reasons.
• Very interesting nonlinear behaviors.• Analysis of couple electrostatic and
elastostatics (and dynamics) is non-trivial.• Squeezed film effect causes damping as well
as air-spring stiffness.• Shape optimization makes more sense but
topology optimization can certainly be attempted.