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Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of Madrid, CSIC SPAIN J. Fernández-Rossier, R. Aguado www.ua.es/personal/jfrossier/ Spin dependent Capacitance Z19-1 Gate Tuning Anisotropy CdTe+1 Mn

Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

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Page 1: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

Single electron Transport in diluted magnetic semiconductor quantum dots

Department of Applied Physics, U. Alicante SPAINMaterial Science Institute of Madrid, CSIC SPAIN

J. Fernández-Rossier, R. Aguado

www.ua.es/personal/jfrossier/

Spin dependentCapacitance

Z19-1

Gate Tuning Anisotropy

CdTe+1 Mn

Page 2: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

GaMnAs Single electron transistor

cond-mat/0602608 Coulomb blockade anisotropic magnetoresistance: Single electronics meets spintronicsAuthors:J. Wunderlich et al.

Page 3: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

Mn(2+)

S=5/22S+1=6

PL

Int

ensi

ty

www.ua.es/personal/jfrossier/

Y. Léger et al., PRL 95, 047403 (05)L. Besombes et al. PRL 93, 207403 (04)

Single ExcitonSpectroscopy

1 Mn per dot

Page 4: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

MSJMSJHH eezzheh

0

ST=Se+M

Heisenberg

Ising

25zM

21zM

23zM

Mzhe JJ

Page 5: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

Single exciton spectroscopy (1 Mn dot)

EXPERIMENTS:Y. Léger et al. PRL 95, 047403 (05)

THEORY: J. Fernández-Rossier, PRB73, 045301 (06)

WE UNDERSTAND e+h+Mn

Page 6: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

NENH Ndot

Theory I: The dot STATES

MSffJffVH vvvvvv

vvv

nnGvdot

','

',',

NUMERICAL DIAGONALIZATION

STATES WITH a FIXED NUMBER of CARRIERS (Controlled By Gate Voltage)

Page 7: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

GATE CONTROL of Magnetic Anisotropy

Heisenberg

ST

Q=-1 Q=0 Q=+1 Q=+3

Free

HHLH

Ising ZXX

Mz

Page 8: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

KL

LKNMKLMNMN RHi

dt

d,,

, ,

tunneldrainsourcedot VHHHH

N

NNNNNNNNI ,11,11,,

MASTER EQUATION

Scattering Rates

Theory: Single electron transport

Density matrix (Vg, Vb)

2

1, 1 NdNNN

Page 9: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

CHARGING the dot

E

Q=0

Q=1

Q=2

VG

VG

Q

Q=0Q=1

Q=2 G

Page 10: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

CHARGING the dot

S=3

S=2

Spin dependentCHARGING

ENERGY

3 PEAKS instead of 1 !!

Page 11: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

2/5 2/5

2/3 2/3

2/1 2/1

2/1 2/1

2/3 2/3

2/5 2/5

VG

E

25zM

21zM

23zM

Page 12: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

2/5 2/5

2/3 2/3

2/1 2/1

2/1 2/1

2/3 2/3

2/5 2/5

VG

E

25zM

21zM

23zM

Page 13: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

2/5 2/5

2/3 2/3

2/1 2/1

2/1 2/1

2/3 2/3

2/5 2/5

VG

E

25zM

21zM

23zM

Page 14: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

2/5 2/5

2/3 2/3

2/1 2/1

2/1 2/1

2/3 2/3

2/5 2/5

VG

E

Q=0

Page 15: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

2/5 2/5

2/3 2/3

2/1 2/1

2/1 2/1

2/3 2/3

2/5 2/5

VG

E

Q=1/3

Page 16: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

2/5 2/5

2/3 2/3

2/1 2/1

2/1 2/1

2/3 2/3

2/5 2/5

VG

E

Q=2/3

Page 17: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

2/5 2/5

2/3 2/3

2/1 2/1

2/1 2/1

2/3 2/3

2/5 2/5

VG

E

Q=3/3

Page 18: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

Inelastic single spin spectroscopy

Page 19: Single electron Transport in diluted magnetic semiconductor quantum dots Department of Applied Physics, U. Alicante SPAIN Material Science Institute of

CONCLUSIONS

Electric Tuning of magnetic anisotropy

Ising ZXX

Mz

www.ua.es/personal/jfrossier/

SPIN conditional charging energy

Q=+1 Q=+3