Upload
roberta-gardner
View
220
Download
0
Embed Size (px)
Citation preview
Silicon Microstrip detectorSingle sided and double sided
K.Kameswara rao, Tariq Aziz , Chendvankar , M.R.Patil Tata institute of fundamental research , Mumbai , India
Y.P.Prabhakara Rao 、 Y. Rejeena RaniBharat Electronics limited , Bangalore , India
Detector specifications
First Batch : <111> , Resistivity 2k-4kohm Single sided、 Prototype
Second Batch : <100> , Resistivity 10k-20kohm(Single sided and double sided detectors )
Third Batch : <111> , Resistivity 9k - 12kohm、Single sided
Fourth Batch : <111> , Resistivity 2k -4kohm Single sided
First Batch :• Main Features of the Detector :
11 sets of different width and pitches in one detector
Minimum Strip width of 12microns and strip pitch of 65microns for about 7.4cms long on a 4” silicon wafer.
AC coupling, Common Bias via Polyresistor High value of resistance (1.5M to 3.5Mohms ) achieved within less than 500microns of length and width of 30 to
60microns
Wafer : n type Silicon, 4inch Diameter, 300 micron thickness, FZ type
Orientation : <111>
Resistivity : 5 Kohm-cm
No. Of Independent sets of detectors : 11
Type of implantation for strips : p+
No. strips per set : 32
Polysilicon resistor value: 2 to 4 Megaohms
Dark Current ( at 100V reverse voltage ) max : 5 Microamps
MASK DESIGNS
Mask 1 : p+ Mask 5 : Opening Contacts over dc pad, bias pad Mask2 : Capacitor (Sio2) Mask 6 : MetalMask3 : Polycontact opening Mask 7 : Protective layer Mask4 : Polyresistor
First Batch
Actual Silicon Microstrip Detector
Geometry : 76mm * 47mm
Microscopic view of SILICON MICROSTRIP DETECTOR
Bias padAc padDc pad
poly
I - V Characteristics of Silicon Microstrip Detector
0
200
400
600
0 50 100 150 200 250 300 350 400 450
Voltage
Cu
rre
nt
( n
ano
am
ps
)
Set 1
Set 2
Set 3
Set 4
Set 5
Set 6
Set 7
Set 8
Set 9
Set 10
Set 11
C - V Characteristics
0
50
100
150
200
250
0 20 40 60 80 100 120
Voltage
Ca
pa
cit
an
ce
( p
f )
Set 1
Set 2
Set 3
Set 4
Set 5
Set 6
Set 7
Set 8
Set 9
Set 10
Set 11
Second Batch : Detectors Produced : 1) SSD - 5 No’s 2) DSSD – SL - 10 No’s 3) DSSD – DL - 10 No’s
• Wafer crystal orientation : < 100 >• Type : FZ• Wafer thickness : 300 µm• Size : 4 inch• Resistivity : > 10 to 20 Kohm-cm• Breakdown voltage : > 300V• Polysilicon resistor value : > 4 Megaohms• Total Dark current : <= 2 microamps @ 100V• Area : 79600 x 28400• Effective Area : 76800 x 25600
Wafer specifications :
P side : No. of Masks : 10 ( double metal structure )• Number of strips : 1024 Number of Readout strips : 512 Pitch : 75 P+ strip width : 50 P+ strip length : 25600 N side : No. of Masks : 8• Number of strips : 512 Pitch : 50 N+ strip width : 12 N+ strip length : 76800 P stop with ATTOL structure• AC pad accessibility of the strips will be available with
double metal structure and as well as without double metal structure ( provision for bonding with kapton cable)
Double sided silicon detector specifications
0 20 40 60 80 100 120 140 1600
50
100
150
200
250
300
350
I - V Characteristics of SSD <100> Res. 10k to 20k Series1
Series3
Series5
Series7
Series9
Voltage(volts)
Curr
ent
(uA
)
0 20 40 60 80 100 12070
90
110
130
150
170
190
210
230
C - V Charcteristics of SSD <100>
SSD#56 SSD#57 SSD#49 SSD#63 SSD#29
Voltage (volts)
Capacitance(pf)
Double-sided Silicon Microstrip detector
n+
p+
bulk n
Al
p+ stopper
SIO2
SIO2
Al
Advantages : Two dimensional positional information
0 20 40 60 80 100 1200
20
40
60
80
100
120
140
I - V Characteristics of DSSD -SL <100> Res.10k to 20k Series1
Series3
Series5
Series7
Series9
Series11
Series13
Series15
Series17
Series19
Voltage(volts)
Curr
ent
(uA
)
0 20 40 60 80 100 12050
60
70
80
90
100
110
120
C - V Characteristics of DSSD - SL
DS-SL#44 DS-SL#46 DS-SL#10 DS-SL#65 DS-SL#41 DS-SL#16 DS-SL#66 DS-SL#28
DS-SL#18 DS-SL#42
Voltage (volts)
Capacitance (pf)
DSSD with double metal ―P –side design with all masks
Photo of P - side Via’s and Metal 2
Via’s
Photo of N side AC pads
0 20 40 60 80 100 120 140 1600
100
200
300
400
500
600
I - V Characteristics of DSSD - DL <100> Res. 10k to 20k
Series1Series3Series5Series7Series9Series11Series13Series15Series17Series19
Voltage( volts)
Curr
ent
(uA
)
0 20 40 60 80 100 120130
180
230
280
330
380
C - V Characteristics of DSSD - DL
DS-DL#36 DS-DL#32 DS-DL#32+ DS-DL#08 DS-DL#48 DS-DL#47 DS-DL#34
DS-DL#9 DS-DL#64 DS-DL#31
Voltage (volts )
Capacitance (pf)
0
50
100
150
200
250
300
350
0 50 100 150 200 250
Cu
rre
nt (
mic
ro a
mp
s )
Voltage ( volts )
I - V Characteristics comparision of ssd and dssd
SSD#63
DSSD-SL#28
DSSD-DL #31
0 20 40 60 80 100 120 140 1600
5
10
15
20
25
30
35
40
45
50
I - V Characteristics of SSD <111> Res. 9k to 12k Series1
Series3
Series5
Series7
Voltage (volts )
Curr
ent
(uA
)Third Batch
Response of silicon detector with 1064nm pulsed laser Tested with single sided detector
0 50 100 150 200 250 300 350 400 4500
100
200
300
400
500
600
700
Pulse height distribution
Series1
milli volts
No. of time occurred
0 50 100 150 200 250 300 350 4000
0.5
1
1.5
2
2.5
3
3.5
4
8004-5*8018-1*8018-2*8018-38004-78004-8
Reverse voltage ( volts )
cur
rent
( µ
amps
)
I - V characteristics of SSD with resistivity of 2-4kohm (03-03-09)
Fourth Batch
0 20 40 60 80 100 12040
50
60
70
80
90
100
110
120
8004-5* 8018-1* 8018-2* 8018-3 8004-7 8004-8
Reverse voltage (volts)
capa
cita
nce
( pf )
C-V characteristics of ssd(03-03-09)
Present status
Recently developed detectors has to under go different tests。