SiC Power Module Technologies and Products for

SiC Power Module Technologies and Products for

Page 1

GPTG Proprietary and Confidential

Agenda

• General Overview of Global Power Technologies Group

• Difference between Si and SiC

• Hybrid & SiC Power Modules

• GPTG SiC Based Power Modules

• Module Reliability Concerns

Page 2

GPTG Overview

20692 Pr ism P lace, Lake Forest CA 92630

Page 3


GLOBAL POWER TECHNOLOGIES GROUP, INC. (“GPTG”) IS AN

INTEGRATED DEVELOPMENT AND MANUFACTURING COMPANY DEDICATED TO

PRODUCTS BASED ON SILICON CARBIDE (SIC) AND AMORPHOUS MAGNETIC MATERIALS.

Global Power Technologies GroupSung Joon Kim – Founder/CEO

SiC Epitaxial

Materials Group

SiC Epitaxial Material

SiC Commercial

Devices Group

Schottky Diode &

MOSFET

SiC Modules and

Systems Group

- SiC Modules

- SiC Subsystems

Inverters,

On-Board Chargers

Magnetic

Materials Group

Amorphous Magnetic Material for Power

Electronics

Current application areas include:

EV Automotive, Solar Inverters, HV AC, Lighting, Motor Transformers,

Energy Storage , Motor Inverters, Medical, Servers, Renewable Energy

COMPANY SUMMARY

Page 4


• Experience in SiC Module Design� Electrical design and simulation. Design and manufacture modules from System Users’

perspective and within components capabilities.

� Thermo-mechanical design and simulation

� Module material analysis and design: case, substrate, heat sink, encapsulant, bonding,

solder.

• Experience of SiC subsystem design using GPTG’s SiC devices and module� 4 generations of SiC based On Board Chargers

� 17 kW and 50 kW all SiC based inverter that included the development of SiC based

modules

� Delivered several SiC subsystem designs to industry customers using GPTG’s SiC modules.

• Commercialization of SiC based modules and guaranteed delivery of quality products.� Tier 1 system customers in Europe and N. America

• Manufacturing and Qualification Process.� Failure Mode analysis

� Manufacturability platform

� Qualification testing.

• Business based on vertical integration from SiC material, device, module and

subsystem

• Collaborating partners around the world� Over 20 partners worldwide.

GPTG Capabilities, Competencies and Differentiation

Page 5


GPTG Vertical Integration Strategy for SiC Power Module Development and Manufacturing

Page 6

SiC Wafer

Front End

SiC Epiwafer

Photolithography

Metallization

Dielectrics

Etching…

Dies on WaferBack End 1

Wafer Level Testing

DicingBare Dies

Back End 2

Die Attach

Wire Bond

Discrete & Module Package


PRODUCT AND TECHNOLOGY PORTFOLIO SUMMARY

• 100 mm epiwafer - Now


• 200 mm epiwafer – 2017 if there is market need



• 200 mm epiwafer – 2017 if there is market need

SiC Epitaxial Wafer Manufacturing

• SiC Diodes : 600V, 1200V, 1700 V and 3300V – Now

• SiC MOSFETs: 23 mOhm, 80mOhm, 160mOhm – Q4/2016

• SiC Diodes : 600V, 1200V, 1700 V and 3300V – Now

• SiC MOSFETs: 23 mOhm, 80mOhm, 160mOhm – Q4/2016Low Cost SiC Devices

• 600V, 1200V, 1700 V – Now and Q3/2016

• Anti- Parallel, Parallel, Full Bridge, Boost Chopper , Buck Chopper - Now

• 600V, 1200V, 1700 V – Now and Q3/2016

• Anti- Parallel, Parallel, Full Bridge, Boost Chopper , Buck Chopper - NowSiC Modules

• 3.3kW and 6.6 kW On-board Charger – Commercial Product Q2/17

• 50~100 kW Inverter and Converter – Customer Application Specific

• Custom System for Automotive, Industrial, Solar, Motor Control Markets

• 3.3kW and 6.6 kW On-board Charger – Commercial Product Q2/17

• 50~100 kW Inverter and Converter – Customer Application Specific

• Custom System for Automotive, Industrial, Solar, Motor Control MarketsSiC Subsystems

• High performance, high frequency, low loss magnetic material for inductor and transformer. – Samples Now

• Critical technology that enables and enhances SiC based power electronics.

• High performance, high frequency, low loss magnetic material for inductor and transformer. – Samples Now

• Critical technology that enables and enhances SiC based power electronics.

Magnetics Material for the Power Market

GPTG deliver an entire platform of high performance, low cost and ground

breaking power electronics solutions from SiC Epiwafers to SiC Subsystem and

Amorphous Magnetic Materials

Page 7


Discrete SiC Diodes in Production

Part Voltage Amp Package

GP2D0003A060A 600 3 TO-220

GDP03S060C 600 3 TO-252 (DPAK)

GP2D0003A060C 600 3 TO-252 (DPAK)

GDP06S060A 600 6 TO-220

GP2D006A060A 600 6 TO-220

GP2D006A060C 600 6 TO-252 (DPAK)

GDP06S060D 600 6 TO-263 (D2PAK)

GDP12S060A 600 12 TO-220

GP2D012A060A 600 12 TO-220

GP2D012A060D 600 12 TO-252 (DPAK)

GDP12S060D 600 12 TO-263 (D2PAK)

GDP24P060B 600 24 TO-247

GDP36Z060B 600 36 TO-247

GP2D024A060U 600 2X12 TO-247-3

GDP48Y060B 600 2X24 TO-247-3

GP2D003A065A 650 3 TO-220

GP2D003A065C 650 3 TO-252 (DPAK)

GP2D005A065A 650 5 TO-220

GP2D005A065C 650 5 TO-252 (DPAK)

GP2D006A065A 650 6 TO-220

GP2D006A065C 650 6 TO-252 (DPAK)

GP2D010A065A 650 10 TO-220

GP2D010A065C 650 10 TO-252 (DPAK)

GP2D012A065A 650 12 TO-220

GP2D012A065C 650 12 TO-252 (DPAK)

GP2D020A065B 650 20 TO-247

Part Voltage Amp Package

GP2D005A120A 1200 5 TO-220

GP2D005A120C 1200 5 TO-252 (DPAK)

GDP08S120A 1200 8 TO-220

GP2D010A120A 1200 10 TO-220

GP2D010A120B 1200 10 TO-247

GP2D010A120C 1200 10 TO-252 (DPAK)

GP2D015A120A 1200 15 TO-220

GP2D015A120B 1200 15 TO-247

GP2D020A120A 1200 20 TO-220

GP2D020A120B 1200 20 TO-247

GD2D030A120B 1200 30 TO-247-2L

GP2D050A120B 1200 50 TO-247-2L

GP2D060A120B 1200 60 TO-247-2L

GDP60Z120E 1200 60 Extended TO-247

GP2D020A120U 1200 2x10 TO-247-3

GP2D030A120U 1200 2x15 TO-247-3

GP2D040A120U 1200 2x20 TO-247-3

GP2D060A120U 1200 2x30 TO-247-3

GP2D005A170B 1700 5 TO-247

GP2D010A170B 1700 10 TO-247

GP2D020A170B 1700 20 TO-247

Page 8


SiC

Epi wafer

SBD & MOSFET

Modules

Subsystem

In Production

Soft and Permanent

Magnets

Inductor transformer

Nd-less Permanent Magnet for motor

Prototype and

Samples

H.T. & H.D Film Capacitor

Technology

HEV/EV H.T.

Power Train

Evaluation and Partnership

High Temp. IC

Gate Driver

& H.T. IC

applications

Early SOI evaluation

samples

High Efficiency and Compact

High Integration, High Performance, Low Cost

Game Changing Power Electronics

GPTG POWER ELECTRONICS PLATFORM AND ROADMAP

SiC and magnetic materials technologies are needed for highly efficient power generation, conversion and transmission at low cost in the future.

Page 9

DIFFERENCE BETWEEN SI AND SIC

Page 10


Material properties for Si vs. SiC

SIC ADVANTAGES

Page 11


SIC ADVANTAGES

Page 12


Advantages of SiC Diodes in PFC Circuits

I C

urr

en

t (A

)

-10

-8

-6

-4

-2

0

2

4

6

8

10

-1.0E-07 -5.0E-08 0.0E+00 5.0E-08 1.0E-07 1.5E-07 2.0E-07

CSD10060

TJ = 25, 50, 100, 150°C

600V, 10A Si FRED

TJ = 25°C

TJ = 50°C

TJ = 100°C

TJ = 150°C Competitors Silicon

Diode

Wasted Energy!

SiC Switching Waveform –

Constant over Temp

Time (s)

• Because JBS Diodes Do Not Have Minority Carriers

They Switch with Virtually “Zero Reverse Recovery Energy”.

• JBS Diode “Zero Reverse Recovery Energy”

Behavior is More Pronounced at Higher Temperatures

Page 13


Why Hybrid Modules?

Page 14


Benefits of SiC Free Wheeling Diode With Si IGBT In AC Motor Drive

Parameterw/ Si

FWD

w/SiC

FWD

Reduction

IGBT Conduction

Loss (w)

5.34 5.34

FWD Conduction

Loss (w)

2.91 5.58

IGBT Switching

Loss (w)

11.51 5.29 54%

FWD Switching

Loss (w)

1.625 0.01 99%

Total Switching

loss (w)

13.14 5.3 60%

Total conduction

loss (w)

8.25 10.92

Total Inverter

loss (w)

128.3 97.32 24.2%

• 24% Reduction In Inverter Loss Using SiC FWD

• Leading to 0.6% Increase in Inverter Efficiency

Page 15


Benefits of SiC Free Wheeling Diode With Si IGBT In AC Motor Drive

• Radiated EMI plot from 30MHz to 1GHz for Si FWD and SiC FWD.

• Shows the contribution of diode reverse recovery on the EMI spectrum in these systems. EMI can be a critical challenge during qualification

• Similar reductions achieved in the conducted EMI spectrum (150kHz to 30MHz).

• SiC FWD Reduces Radiated and Conducted EMI

Page 16


Lower Conduction Losses of SiC MOSFET

Page 17


• SiC MOSFET RDSON increases only 20% over operating temperature versus more than 250% for 1200V silicon MOSFETs

• Low RDSON flatness greatly eases system design-in for high efficiency applications

• Ensures simple and reliable system thermal performance

• Positive temperature coefficient allows easy paralleling of many devices to achieve higher system current ratings

RDS(on) over Temperature

Page 18


Efficient Switching with Minimal Ringing SiC Module

Page 19


Hybrid Modules vs. All SiC Modules

� High Cost

Page 20


Charging Solution with SiC Devices

21


Off Board DC Charging System

22


SiC MOSFET Inverter Advantage

• SiC MOSFETs reduce switching losses by 33% to 50% in drive system:

� Improved inverter efficiency & lower operating energy costs and

� Operating temperatures can be reduce by 50%:

o Cooler device operation increases system reliability

o Heatsink can be shrunk making the system smaller, lighter and less costly

o Cooling system can be reduced further improving reliability and lowering cost

• Lower switching losses of SiC MOSFETS enable higher frequency operation� Decrease size & weight of capacitors and magnetics

� Present silicon systems limited to 1-8kHz producing audible “hum”

� SiC enables quiet, >20kHz operation reducing noise while maintaining efficiency

Silicon IGBT Inverter SiC MOSFET Inverter

• Same general topologies

• Improved packages

•SiC provides:

• Better efficiency

• Faster switching

• Higher reliability

Page 23


Efficient Switching Benefits Realized at System Level

SiC Module Operates 69oC Cooler than IGBT4 in 30 HP Motor Drive

Page 24


Boost Converter for Automotive

Boost Converter

- Maximum Input Current: 266A Rated- Input/Output Voltage: 150V / 700V- Switching Frequency: ~150KHz- Cooling Method: Air Cooling or 105℃ Liquid Cooling (Use engine coolant)

Motor Driver Inverter

- Maximum Current(MG1/MG2) : 150Arms / 250Arms Rated- Switching Frequency: ~150KHz- Cooling Method: Air Cooling or 105℃ Liquid Cooling (Use engine coolant)

Page 25


SiC Solution in Re-Generative Inverter

• SiC simplifies design, increase reliability and drive down cost of filter magnetics

• Large cost advantage from reliability, shipping and installation overheads

SiC MOSFETs enable:

• Higher efficiency than silicon

• Eliminates 24 silicon semis

• Size and weight reduced by 50%

• Reliability improved

SiC

Replaces

SiC Two Level Inverter

Slow, inefficient silicon forces complex, multi-level

inverter designs

Si Three Level Inverter

• SiC provides same efficiency and reliability advantages to the re-gen inverter as for the motor

inverter

• When regenerated energy is put back on the utility grid, care must be taken to filter spurious

electrical noise from grid

• SiC brings higher frequency capability to make filter components smaller, lighter and less

costly without reverting to multi-level silicon topologies

Page 26


Topology Analysis for 3-Phase PV Inverter

Page 27


Solar Inverter Example Using SiC MOSFET

7kW 750V DC link 3-Phase Solar Inverter(Fraunhofer Institute, Freiberg Germany)

~ 2% Efficiency Improvement

vs. Si IGBT

Record PV efficiency since

demonstrated at 99.05% with

SiC power devices

Page 28


LED Lighting Power Supply

29


Why SiC SBDs?

30


Diode Effect on Efficiency

31

GPTG Power Module Products

Page 32


GPTG’s SiC Power Modules Used in Subsystem Applications

GPTG Established

(2007)

200oC Hermetic Sealed SiC Half Bridge

Module Used in 18

kW Inverter

(2008)

200oC SiC 6-Pack

module for 50 kW

Inverter

(2011)

SiC PFC DC/DC Power

module for 6.6kW On-

Board Charger

(2014)

SiC Half Bridge

Modules (2015)

High Density SiC Integrated

Power Module (2016-2017)

SiC SBDs/

MOSFETS

Industrial

SiC

Hybrid

Power

Module

(2015)

Page 33

Technology Demonstration Commercial Product Development Next Generation High Performance Products

2008 2011 2013 2014 2015

www.gptechgroup.com

20172016


GPTG SiC Power Module Products

• SOT-227 for both SiC Diode Modules and Hybrid

Copak/Boost/Buck Modules

� Qualifications

� In Production

• New SiC Power Modules

� Hybrid Power Modules

� Full SiC Power Modules

Page 34

Power Modules in SOT-227 Package

Page 35


SiC SBDs in SOT-227

Page 36


SiC SBD Module in SOT-227

Page 37

Red colored ones are under development


Hybrid with Si IGBTs + SiC Diodes

Page 38


Hybrid with Si IGBT + SiC Diode Module

Page 39


Si SBD SOT-227

40


Si FRED SOT-227

41


6-Pack Si IGBT Modules

Page 42


Hybrid Modules in 34 mm/62 mm Package

Page 43


Hybrid PIM Modules with SiC FWDs

Page 44


SiC MOSFET Power Modules

Part Number VDSS[V]ID[A] @

Tj=150oC

Typical

RDS_ON[mW]Qg [nC] Package Type Topology Package

GCMS040A120S1-E1 1200 30 40 115 SOT-227

GCMS020A120S1-E1 1200 60 20 230 SOT-227

GCMS012A120S1-E1 1200 100 12.5 360 SOT-227

GCMS080A120B1H1 1200 20 80 49 B1_Flow0

GCMS040A120B1H1 1200 40 40 115 B1_Flow0

GCMS020A120B1H1 1200 80 20 230 B1_Flow0

GCMS010A120S7B1 1200 160 10 460 S7_62mm

GCMS007A120S7B1 1200 240 6.8 690 S7_62mm

GCMS004A120S7B1 1200 360 4.2 1074 S7_62mm

GCMS008A120B1B1 1200 150 8.3 B1_Flow0

Product Part Number Customers Applications

GCMS020A120S1-E1 Test equipment Suppliers Charger Test Equipment

GCMS080A120B1H1 Military, Aerospace PFC Boost, DC/DC converter

GCMSXXXA120S7B1 Industrial, automation, and others Motor Driver, Inverter, Converter

GCMS008A120B1B1 Automotive venture company Light/Fast Motor Driver

Page 45


GPTG SiC MOSFET Module: Value Proposition

• Customized Solutions

� Optimize module design for a specific customer

� Design Optimization of Substrate Layout and Materials (Al2O3/AlN/Si3N4)

• Use our standard package Platforms

� Minimum or No NRE charges

� Quick prototype delivery (less than 8~12 weeks ARO)

� SOT-227, Flow-0 Compatible, EASYPACK Compatible modules

• New Package Platform Development (S7B1 type)

� Lower package height: from 30mm to 17mm

� Lower parasitic power loop inductance: less than 10nH (Laminated Bus-bar option for further reduction of stray inductance)

� Improve reliability: by using AMB Si3N4 substrate

� Customize voltage & current rating of SiC MOSFETs and SBDs by customer requirements

Page 46

* Use commercially available SiC MOSFET die until GPTG MOSFETs are qualified.


SiC Copack Module S1E1 Type (Qualification)

GPTG 1200V SiC MOSFETs Copack Module

• Low profile(12mm height)

• SOT-227 package

• Ultra low power loss

• Electrically Isolated baseplate

• Customer: KeySight

Page 47

In production now

1

21

2

43


SiC Full-Bridge Module B1H1 Type (Qualification)

GPTG 1200V SiC MOSFETs Half Bridge Module


• low inductance with internal capacitor


• AlN Substrate without base plate

• Customer: General Atomics, Toshiba

Page 48

Engineering sample available now


Double Pulse Testing of GCMS020A120B1H1

Yellow: Vds=600V

Green: Id= 40A

Blue: Vgs =+18V/-5V

Double Pulse Test Board for Transient

Switching CharacterizationRequired design optimization

for 17mm half bridge module

Page 49


SiC Half-Bridge Module B1B1 Type (Q3 2017)



• low inductance with internal Snubber capacitor


• AlN Substrate without base plate

Page 50

Preliminary datasheet available now


SiC Half-Bridge Module S7B1 Type (Q4 2017)

Page 51



• Low inductance less than 10nH

• Three different current ratings (160/240/360A)


• Si3N4 AMB Substrate

Preliminary Datasheet are generated and shared with potential customers.

GCMS010A120S7B

1

GCMS007A120S7B

1

GCMS004A120S7B

1


GPTG New Design (I) Optimize Substrate Design with Laminated Busbar

• Improved layout for lower commutation loop inductance: Relocated Q1, Q2, Q3 next to D4, D5, D6 (opposite side commutation diodes)

@100KHz Total (nH) L1 (nH) L2(nH)

Original 29mm 10.88 11.42 11.39

Original 17mm 8.56 9.14 9.03

D9 (17mm) with

Laminated Busbar

5 (Target was

less than 10)

8.24 7.55

http://www.wolfspeed.com/media/downloads/183/CAS300M12BM2.pdf

• Cree package with design simulation: close to our original 29mm data

L1 L2

DC+

DC-

D4D5 D6

D1D2

D3

Q1Q2

Q3

Q4Q5

Q6

DC-

DC+• Laminated DC+/DC- busbar in order to

reduce DC+/DC- loop inductance

• Q3D simulation results between DC+ and DC- terminals

Page 52


Design Optimization : Simulation Flow Chart

Reduce development cost and minimize prototype development cycle times.

Page 53

Q3D stray inductance analysis

IcePak thermal analysis

SolidWorks 3D modeling

Optimize DBC layout and busbar

in terms of inductance

Evaluate the impact of replacing AlN

substrates with 6 types of Si3N4 substrates

Mechanical Stress

Analysis

ANSYS Mechanical Analysis


Customer Specific Power Modules Under Development

54


Full Rectifier Package Modeling

Cu-leadframe on top of ceramic-Al substrate

Coefficient of thermal conductivity Thickness

AL 160W/m-k 0.7 mm AL6061

insulation 1.5-2W/m-k 0.2 mm

Epoxy 0.36W/m-k n/a EME1100-RG


Package Outline Drawing


SiC MOSFET 6-pack Module Plus Si-Diode Half Bridge

57

• SiC MOSFET: 1200V 80mohm

• Si Diode: 1200V 50A

• Substrate: Si3N4 AMB for high reliability

• Operating Junction Temperature : -40 ~+150oC

• Package Size: 51 x 62.8 x 12 mm

• PCB Interface: Soldering pin (Press Fit is under development)

• Weight: 40 g


SiC MOSFET Full Bridge and Diode Rectifier Module (Opt. 1)

58


• SiC SBD: 1200V 30A

• Substrate: Si3N4 AMB


• Package Size: 33.8 x 62.8 x 12 mm

• PCB Interface: Press Fit

• Weight: 24 g

Separated two modules


SiC MOSFET Full Bridge and Diode Rectifier Module (Opt. 2)

59


• SiC SBD: 1200V 30A

• Substrate: Si3N4 AMB


• Package Size: 51 x 62.8 x 12 mm

• PCB Interface: Soldering pin (Press Fit is under development)

• Weight: 40 g

Single module solution

+


HB module with Dual Gate Driver IC (Under Development)

60


Leadfram Based Boost IPM (Under Development)

61


Automotive Qualified Manufacturing Platforms

GPTG team is designing and manufacturing

power modules with the assembly process based

on ISO TS 16949 qualified manufacturing line

through manufacturing partners.

Page 62

Power Module Reliability Concerns

Page 63


Ceramic Mechanical Characteristics

Page 64


Ceramic Electrical Characteristics

Page 65


Temperature Cycle Reliability

Page 66


GPTG Standard Power Module Reliability Test Flows

Page 67


Reliability Test Items (Referenced by JEDEC and AEC-Q101)

Page 68

GPTG could perform the following reliability tests concurrently, based on AEC Q101

requirements with 30 prototype samples.

Items Test Stress typeREL Test

LocationStandard # of legs Samples ACC/REJ Test Conditions

AEC Q101

Experience

1 TESTPre- and Post-Stress

Electrical TestGPTG NA N/A

Dielectric and Parametric test @ 25°C , functional test

when applicable per User's or Supplier's specNA

2 ACLV Autoclave AEGJESD22-

A102 1 5 0/1 96 hrs, Ta=121°C, RH=100%, 15psig. N*

3 TCTemperature Cycling (not

operating, not powered)AEG

JESD22-

A1041 5 0/1 1000 cycles, -40°C / +150°C, Transfer 12°C/min (TBD) Y

4 H3TSL

High Humidity, High

Temp. High Efficient

Storage Level)

AEGJESD22-

A101 1 5 0/1

1000 hrs, 85°C/85% RH. Device reverse bias at 80% of

rated breakdown voltage.N**

5 HTRBHigh Temperature

Reverse BiasGPTG

JESD22-

A108 1 5 0/1

168, 500, 1000 hrs at Tj max=175°C, 80% of device

Breakdown Voltage (1200V)Y

6 HTGBHigh Temperature Gate

Bias GPTG

JESD22-

A108 1 5 0/1

168, 500, 1000 hrs at Tj max=175°C, 100% Vg max

(limited to 24V)Y

7 IOL

Intermittent Operational

Life(operating: power

cycle)

WYLE

MIL-STD-

750

TM1042

1 5 0/1Power cycling Delta Tj>=100°C min, 6,000 load cycles (5

min on and 5 min off)N***

8 VIB Vibration Variable Freq. WYLEJESD22-

1031 3 0/1 TBD N***

9 MS Mechanical Shock WYLEJESD22-

B1041 3 0/1 1500g 0.5ms pulse, 10 shock/axis, 3 axis N***

* GPTG has experience for ACLV testing without 15 PSI pressure.

** GPTG has been done H3TRB testing up to 100V reverse bias condition.

*** GPTG didn't performed the AEC-Q101 module testing, however, WYLE has been done this type of testing for long time.


GPTG Gen2 600V Diodes Pass 1000 Hours HTRB Reliability Testing

Pre-Test

(time=0 hrs)

Post-Test

(time=1000 hrs)

High Temperature Reverse Bias (HTRB). 1000 hours @ 480 V (80% VR).

Pre-Test

(time=0 hrs)

Post-Test

(time=1000 hrs)

Page 69


GPTG Gen2 600V Diodes Pass 1000 Hours HTRB Reliability Testing Summary


100% Pass

Summary

Page 70


GPTG Gen2 1200V Diodes Pass 1000 Hours HTRB Reliability Testing

Pre-Test

(time=0 hrs)

Post-Test

(time=1000 hrs)

100% Pass


Summary

Page 71


Thank You for Your Attention!

Contact: Timothy J. Han Ph.D.

Group Leader of Systems and Modules

Global Power Technologies Group

20692 Prism Place

Lake Forest, CA 92630

Office: (949) 216-8792, Cell: (714) 470-3525

E-mail: [email protected]

Skype account: jhhan.gpe

web: www.gptechgroup.com

Page 72

Documents

SiC Power Module Technologies and Products for