Semiconductor Processing: Thermal Oxides, Defects ...· Planar Processing with Semiconductors (Silicon):

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    Semiconductor Processing:

    Thermal Oxides, Defects, impurities, and diffusion

    Professor Benjamn AlemnDepartment of PhysicsUniversity of Oregon

    N

    CC

    VacancyC

  • Planar Processing with Semiconductors (Silicon):Course Map

    Crystal growth (semiconductors) Wafer doping (in situ) Wafer characteristics SiO2 growth* Defects and impurities

    SiO2 growth* Masked diffusion doping Lithography Vacuum Systems Thin Films: CVD, MBE,

    PVD, ALD Implantation Wet and Dry Etching Integration

  • Quartz and Silica

  • Linear rate constant vs. Temperature

    Factor of 10X

  • Density of available bonds in (111) and (100) faces

    6.78 1014 atoms/cm2 7.83 1014 atoms/cm2

  • Parabolic rate constant vs. Temperature

    Factor of 100X

  • Experimental SiO2 thickness vs. oxidation time shows that the overall growth rate is greater

    for the wet process

    Dry Wet

    Poorer Quality: More porous, OH bonds block O bridges.

    Highest Quality:Must take care to avoid H20 contamination

  • Optical interference

    Constructive interference Interference fringes in soap

    http://en.wikipedia.org/

  • Transmission electron microscopy

    www.tf.uni-kiel.de vi.wikipedia.org

    https://www.google.com/url?sa=i&rct=j&q=&esrc=s&source=images&cd=&cad=rja&uact=8&docid=o3Aial8A4qE9uM&tbnid=SHXqmNkMGgRg5M:&ved=0CAQQjB0&url=http://www.tf.uni-kiel.de/matwis/amat/semitech_en/kap_6/illustr/i6_1_2.html&ei=wJLHU_CHFMm0iwKEpICABA&bvm=bv.71126742,d.cGE&psig=AFQjCNGpAEpLpVJ6Wf8-pmWgm04MwyePrw&ust=1405674452884854http://vi.wikipedia.org/wiki/T%E1%BA%ADp_tin:HRTEM.jpg