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Semiconductor Nanostructure Acoustodynamics Jens Ebbecke Linz 25/06/09

Semiconductor Nanostructure Acoustodynamics

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Semiconductor Nanostructure Acoustodynamics. Jens Ebbecke. Linz 25/06/09. outline. fibres and hybrids. acoustoelectrics. acoustooptics. surface acoustic waves. one kind of solutions: surface acoustic waves first investigated in 1885 by Lord Rayleigh for earth quakes. nanostructure. - PowerPoint PPT Presentation

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Page 1: Semiconductor Nanostructure Acoustodynamics

Semiconductor NanostructureAcoustodynamics

Jens Ebbecke

Linz 25/06/09

Page 2: Semiconductor Nanostructure Acoustodynamics

outline

acoustoelectrics acoustooptics fibres and hybrids

Page 3: Semiconductor Nanostructure Acoustodynamics

GaAs

kikklikli

kkijklijklij

ESeD

EeScT

one kind of solutions: surface acoustic waves

first investigated in 1885 by Lord Rayleigh for earth quakes

surface acoustic waves

f = cSAW / p

nanostructure

Page 4: Semiconductor Nanostructure Acoustodynamics

Surface Acoustic Waves and

Semiconductor Nanostructures:

the electronic part

Page 5: Semiconductor Nanostructure Acoustodynamics

Acoustoelectric Current Device (SET-SAW)

3 m

100 nm

700 nm

700 nm

RF Drive ofFrequency f

Current = e·f

Gate Voltage

Page 6: Semiconductor Nanostructure Acoustodynamics

Current Plateaus

f = 3.58 GHz

P = 16 dBm

T = 1.7 K

I = e f

-2.2 -2.1 -2.0 -1.9

0

1

2

3

4

5

.

Cur

rent

/ nA

Gate Voltage / V

700 nm

700 nm

Page 7: Semiconductor Nanostructure Acoustodynamics

Vgate

2D data

Vgate

RF Amplitude

I=2ef

I=ef

I=3ef

RF Amplitude

Page 8: Semiconductor Nanostructure Acoustodynamics

-1.1

2 V

-1.2

0 V

Interaction of SAW and Impurity dot

Vga

te

RF Amplitude-30 dBm 0 dBm

PRB 68, 245310, (2003)

Page 9: Semiconductor Nanostructure Acoustodynamics

charging energy of a conductor: EC = e2/C Coulomb blockade

EC = e2/C >> kBT

RT >> h/2e2

zero-dimensional electronic system:

energy quantisation :

total energy:

Δ E = EN+1 - EN = Δ + EC

EF ΔE

Semiconductor quantum dots

Page 10: Semiconductor Nanostructure Acoustodynamics

quantized current through a static quantum dot

APL 84, 4319 (2004)

RF Amplitude

Gat

e V

olta

ge

I = 1 ef I = 1·e·f

I = 1 e f

I = 2 e f

I = 3 e f.

..

.

..

0

2

Cur

r.

/ n

A

I = e·f

Page 11: Semiconductor Nanostructure Acoustodynamics

Acoustic turnstile device

-1.1

2 V

-1.2

0 V

V

gate

RF Amplitude-30 dBm 0 dBm

a) b)

a)

Page 12: Semiconductor Nanostructure Acoustodynamics

Exciting: an Archimedian screw for electrons

PRB 72, 121311(R) 2005

(picture taken from Science,304, 1079 (2004)„Highlights of the recent literature“)

Page 13: Semiconductor Nanostructure Acoustodynamics

Charge pumping in Carbon Nanotubes

New J. of Phys. 9, 73 (07)PRB 70, 233401 (04)

I = e·f

1m

Page 14: Semiconductor Nanostructure Acoustodynamics

SAW and GaN nanowires

Nanotechnology 19 , 275708 (08)

400 nm

SiO2 / Au

GaN

Page 15: Semiconductor Nanostructure Acoustodynamics

Surface Acoustic Waves and

Semiconductor Nanostructures:

the optic part

Page 16: Semiconductor Nanostructure Acoustodynamics

Single photon source by bipolar charge transport

GaAs

GaAlAs

GaAs-Quantumwell

Page 17: Semiconductor Nanostructure Acoustodynamics

Single photon source by bipolar charge transport

PRB 74, 035407 (06)

Page 18: Semiconductor Nanostructure Acoustodynamics

ZnCdSe/LiNbO3- Hybrid

Epi-Liftoff of ZnCdSe-QWonto LiNbO3 substrate

Page 19: Semiconductor Nanostructure Acoustodynamics

Finally...

Organic nanofibres

and new stuff

Page 20: Semiconductor Nanostructure Acoustodynamics

Growth of Carbon Nanosticks

Laser ablation of carbon leads self-organisationof carbon nanosticks->Pyroelectric effects responsible for nanostick growth-> organic nanowire son LiNbO3

Page 21: Semiconductor Nanostructure Acoustodynamics

p6P nanofibres on LiNbO3

Standard white LiNbO3 Black LiNbO3

Page 22: Semiconductor Nanostructure Acoustodynamics

p6P nanofibres on LiNbO3

5 µm

5 µm

Post-Growth cleaning withTrimethylpentane

Growth on prestructuredmetal electrodes