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Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter [email protected] http://www.uta.edu/ronc/

Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter [email protected]

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Page 1: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

Semiconductor Device Modeling and

Characterization – EE5342 Lecture 2 – Spring 2011

Professor Ronald L. [email protected]

http://www.uta.edu/ronc/

Page 2: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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Web Pages

* Bring the following to the first class

• R. L. Carter’s web page– www.uta.edu/ronc/

• EE 5342 web page and syllabus– http://www.uta.edu/ronc/5342/

syllabus.htm• University and College Ethics Policieswww.uta.edu/studentaffairs/conduct/www.uta.edu/ee/COE%20Ethics%20Statement%20Fall%2007.pdf

Page 3: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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First Assignment

• e-mail to [email protected]– In the body of the message include

subscribe EE5342 • This will subscribe you to the

EE5342 list. Will receive all EE5342 messages

• If you have any questions, send to [email protected], with EE5342 in subject line.

Page 4: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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A Quick Review of Physics

• Review of –Semiconductor Quantum

Physics–Semiconductor carrier statistics–Semiconductor carrier dynamics

Page 5: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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Bohr model H atom• Electron (-q) rev. around proton

(+q)• Coulomb force, F=q2/4peor2,

q=1.6E-19 Coul, eo=8.854E-14

Fd/cm• Quantization L = mvr = nh/2p• En= -(mq4)/[8eo

2h2n2] ~ -13.6 eV/n2

• rn= [n2eoh]/[pmq2] ~ 0.05 nm = 1/2 Ao

for n=1, ground state

Page 6: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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Quantum Concepts

• Bohr Atom• Light Quanta (particle-like waves)• Wave-like properties of particles• Wave-Particle Duality

Page 7: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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Energy Quanta for Light

• Photoelectric Effect:• Tmax is the energy of the electron

emitted from a material surface when light of frequency f is incident.

• fo, frequency for zero KE, mat’l spec.

• h is Planck’s (a universal) constanth = 6.625E-34 J-

sec

stopomax qVffhmvT 2

21

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Photon: A particle-like wave• E = hf, the quantum of energy for

light. (PE effect & black body rad.)• f = c/l, c = 3E8m/sec, l =

wavelength• From Poynting’s theorem (em

waves), momentum density = energy density/c

• Postulate a Photon “momentum” p = h/ l = hk, h =

h/2p wavenumber, k = 2 p / l

Page 9: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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Wave-particle Duality• Compton showed Dp = hkinitial -

hkfinal, so an photon (wave) is particle-like

• DeBroglie hypothesized a particle could be wave-like, l = h/p

• Davisson and Germer demonstrated wave-like interference phenomena for electrons to complete the duality model

Page 10: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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Newtonian Mechanics• Kinetic energy, KE = mv2/2 =

p2/2m Conservation of Energy Theorem

• Momentum, p = mvConservation of

Momentum Thm• Newton’s second Law

F = ma = m dv/dt = m d2x/dt2

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Quantum Mechanics

• Schrodinger’s wave equation developed to maintain consistence with wave-particle duality and other “quantum” effects

• Position, mass, etc. of a particle replaced by a “wave function”, Y(x,t)

• Prob. density = |Y(x,t)• Y*(x,t)|

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Schrodinger Equation

• Separation of variables givesY(x,t) = y(x)• f(t)

• The time-independent part of the Schrodinger equation for a single particle with KE = E and PE = V.

2

2

280

x

x

mE V x x

h2 ( )

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Solutions for the Schrodinger Equation• Solutions of the form of

y(x) = A exp(jKx) + B exp (-jKx) K = [8p2m(E-V)/h2]1/2

• Subj. to boundary conds. and norm. y(x) is finite, single-valued, conts. dy(x)/dx is finite, s-v, and conts.

1dxxx

Page 14: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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Infinite Potential Well• V = 0, 0 < x < a• V --> inf. for x < 0 and x > a• Assume E is finite, so

y(x) = 0 outside of well

248

2

2

22

2

22 hkhp,

kh

ma

nhE

1,2,3,...=n ,axn

sina

x

n

Page 15: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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Step Potential

• V = 0, x < 0 (region 1)• V = Vo, x > 0 (region 2)• Region 1 has free particle solutions• Region 2 has

free particle soln. for E > Vo , and evanescent solutions for E < Vo

• A reflection coefficient can be def.

Page 16: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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Finite Potential Barrier• Region 1: x < 0, V = 0• Region 1: 0 < x < a, V = Vo

• Region 3: x > a, V = 0• Regions 1 and 3 are free particle

solutions• Region 2 is evanescent for E < Vo

• Reflection and Transmission coeffs. For all E

Page 17: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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Kronig-Penney Model

A simple one-dimensional model of a crystalline solid

• V = 0, 0 < x < a, the ionic region• V = Vo, a < x < (a + b) = L,

between ions• V(x+nL) = V(x), n = 0, +1, +2, +3,

…, representing the symmetry of the assemblage of ions and requiring that y(x+L) = y(x) exp(jkL), Bloch’s Thm

Page 18: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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K-P Potential Function*

Page 19: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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K-P Static Wavefunctions• Inside the ions, 0 < x < a

y(x) = A exp(jbx) + B exp (-jbx) b = [8p2mE/h]1/2

• Between ions region, a < x < (a + b) = L y(x) = C exp(ax) + D exp (-ax) a = [8p2m(Vo-E)/h2]1/2

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K-P Impulse Solution• Limiting case of Vo-> inf. and b ->

0, while a2b = 2P/a is finite• In this way a2b2 = 2Pb/a < 1, giving

sinh(ab) ~ ab and cosh(ab) ~ 1• The solution is expressed by

P sin(ba)/(ba) + cos(ba) = cos(ka)

• Allowed values of LHS bounded by +1

• k = free electron wave # = 2p/l

Page 21: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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K-P Solutions*

P sin(ba)/(ba) + cos(ba) vs. ba

xx

Page 22: Semiconductor Device Modeling and Characterization – EE5342 Lecture 2 – Spring 2011 Professor Ronald L. Carter ronc@uta.edu

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K-P E(k) Relationship*

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Analogy: a nearly-free electr. model• Solutions can be displaced by ka =

2np• Allowed and forbidden energies• Infinite well approximation by

replacing the free electron mass with an “effective” mass (noting E = p2/2m = h2k2/2m) of

1

2

2

2

2

4

k

Ehm

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Generalizationsand Conclusions• The symm. of the crystal struct.

gives “allowed” and “forbidden” energies (sim to pass- and stop-band)

• The curvature at band-edge (where k = (n+1)p) gives an “effective” mass.

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Silicon Covalent Bond (2D Repr)

• Each Si atom has 4 nearest neighbors

• Si atom: 4 valence elec and 4+ ion core

• 8 bond sites / atom

• All bond sites filled

• Bonding electrons shared 50/50

_ = Bonding electron

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Silicon BandStructure**• Indirect Bandgap• Curvature (hence

m*) is function of direction and band. [100] is x-dir, [111] is cube diagonal

• Eg = 1.17-aT2/(T+b) a = 4.73E-4 eV/K b = 636K

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References

*Fundamentals of Semiconductor Theory and Device Physics, by Shyh Wang, Prentice Hall, 1989.

**Semiconductor Physics & Devices, by Donald A. Neamen, 2nd ed., Irwin, Chicago.