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16
AVS12th
International Conference on Atomic Layer Deposition
June 17th to 20th, 2012, Westin Bellevue, Dresden, Germany
Schedule of Contents
Oral Presentations
Monday, June 18th
Oral Session I – Conference Hall 2/3 Topics: (Session Chair: S. George) p. 55-57
09:00 – 09:25 Atomic-scale simulation of the transmetallation mechanism for copper ALD T. S. D. Elliott, G. Dey and Y. Maimaiti
Tyndall National Institute, University College Cork, Lee Maltings, Cork, Ireland
09:25 – 09:50 In-situ FTIR characterization of growth inhibition in Atomic Layer Deposition using
reversible surface functionalization A.Yanguas-Gil, J. A. Liberia and J. W. Elam
Energy Systems Division, Argonne National Laboratory, 9700 S Cass Ave, Argonne IL 60439 (USA)
09:50– 10:15 Oxidative Molecular Layer Deposition of PEDOT a Conductive Polymer S.Atanasov, B. Gong, G. N. Parsons
Department of Chemical and Biomolecular Eng, North Carolina State Univ. Raleigh NC, USA
Oral Session II – Conference Hall 2/3 Topics: (Session Chair: G. Parsons) p. 58-60
10:45 – 11:10 TiO2-on-insulating-layer and insulating-layer-on-TiO2 photo anodes for next-
generation dye-sensitized solar cells A. K. Chandiran, Md. K. Nazeeruddin, M. Grätzel
Laboratory of Photonics and Interfaces, Swiss Federal Institute of Technology (EPFL), Station 6, 1015
Lausanne, Switzerland
11:10 – 11:35 Ferroelectric Phase Transitions in Poly-Crystalline Al:HfO2-Thin Films S. Mueller, A.Singh, T. Mikolajick, J. Müller, S Riedel, J. Sundqvist
NaMLab gGmbH & TU Dresden, Noethnitzer Straße 64, 01187 Dresden, Germany
11:35 – 12:00 Low Temperature Growth of High Purity, Low Resistivity Copper Films by
Atomic Layer Deposition T. Knisley, T. C. Ariyasena, C. H. Winter, T. Sajavaara, M. J. Saly
Department of Chemistry, Wayne State University, Detroit, Michigan 48202,
USA
Oral Session III– Conference Hall 2 Topics: High k on III/V Semiconductor (Session Chair: H. Jeon) p. 61-65
13:30 – 14:00 Investigating the interface between high mobility III-V semiconductors and
ALD oxides for future transistor applications (Invited) P. Hurley, V Djara, É. O’Connor, J. Lin, S. Monaghan, I. Povey,
M. Pemble, M. A. Negara, D. O’Connell and K. Cherkaoui.
Tyndall National Institute, University College Cork, Cork
17
14:00 – 14:15 Surface chemistry during incubation period of ALD of aluminium and hafnium
oxides on oxidised III-V substrate from simulation S. Klejna, S. D. Elliott
Tyndall National Institute, University College Cork, Cork
14:15 – 14:30 Effect of H2 plasma pre-treatment on the reduction of native oxides at the PEALD
Al2O3/GaSb interface E. Cleveland, L. B. Ruppalt, J. B. Boos, B. R. Bennett, and S.M. Prokes
Electronic Science and Technology Division, U. S. Naval Research Laboratory, Washington D.C.
14:30 – 14:45 TMA-based atomic layer deposition of high-permittivity Al:HfO2 and
Al:ZrO2 on In0.53 Ga0.47 As substrates E.Cianci,, A. Molle, S. Baldovino, A. Lamperti, C. Wiemer, S. Spiga, M. Fanciulli, C. Merckling, G.
Brammertz, M. Caymax
Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, Agrate Brianza, Italy
14:45 – 15:00 Interface Electronic State Characterization of Remote PEALD High-k Dielectrics on
GaN B. S. Eller, J. Yang, and R. J. Nemanich
Department of Physics, Arizona State University, Tempe, Az 85287, USA
Oral Session IV – Conference Hall 3 Topics: Characterization I (Session Chair: C. Detavernier) p. 66-70
13:30 – 14:00 Scanning Probe Microscopy of Single Molecules on Ultrathin Insulation Films
(Invited) Jascha Repp
Institute of Experimental and Applied Physics, University of Regensburg, 93053
Regensburg, Germany
14:00 – 14:15 Measuring Adhesion of ALD Aluminum Oxide Thin Films on Silicon Substrate by
using Embedded Nanospheres Jussi Lyytinen, Maria Berdova, Xuwen W. Liu, Juha Larismaa, Jari Koskinen and Sami Franssila Department of Materials Science and Engineering, Aalto University, Espoo, Finland
14:15 – 14:30 Surface Characterization and Process Control for ALD using Inline XPS Technique Min Dai, Srinivasan Rangarajan, Joseph F Shepard, Rishikesh Krishnan, Bing Sun, Arun Srivatsa,
Michael P Chudzik / Mark Klare, Michael Kwan, and Tom Larson
IBM, 2070 Route 52, Hopewell Junction, NY 12533
14:30 – 14:45 Probing ultrathin film continuity and interface abruptness with x-ray photoelectron
spectroscopy and low-energy ion scattering
Wenyu Zhang, Rambert K. Nahm, James R. Engstrom, Paul F. Ma
School of Chemical and Biomolecular Engineering Cornell University, Ithaca, NY 14853, USA
14:45 – 15:00 Densification of Low-Temperature ALD Aluminum Oxide Thin Films by in-situ Flash
Annealing
T. Henke, C. Hossbach, M. Knaut, M. Geidel, M. Albert, J. W. Bartha / A. Singh
Institute of Semiconductors and Microsystems, TU Dresden, 01062 Dresden, Germany
18
Oral Session V – Conference Hall 2 Topics: High k Metal Gate/Metal (Session Chair: H. Kim) p.71-74
15:30 – 15:45 Atomic layer deposition of ruthenium (Ru) thin films using ethylbenzene-
cyclohexadienyl Ru(0) as a seed layer for copper metallizations Seungmin Yeo, Sang-Hyeok Choi, Soo-Hyun Kim, Taehoon Cheon, Byoung-Yong Lim,
Sunjung Kim, Tae-Eun Hong
School of Materials Science and Engineering, Yeungnam University, 214-1, Dae-dong, Gyeongsan-
City, 712-749, Korea
15:45 – 16:00 Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl
titanium and H2 plasma and applications to a diffusion barrier and contact material Sang-Kyung Choi, Soo-Hyun Kim ,Taehoon Cheon
School of Materials Science and Engineering, Yeungnam University, Daedong, Gyeongsan city,
Gyeongsangbuk-do 712-749, Korea
16:00 – 16:15 Development of a TaCN Batch Furnace ALD Process M. Drescher, J. Sundqvist, A. Naumann, P. Polakowski, J. Calvo, M. Czernohorsky, E. Erben, K.
Hempel, J. Metzger, B. Jongbloed, H. Sprey, G. Probst, S. Beulens, S. Haukka
Fraunhofer CNT, Dresden, Germany / Globalfoundries, Dresden, Germany
16:15 – 16:30 Low temperature PEALD SiN for gate first HKMG sidewall protection layer D.H. Triyoso, V. Jaschke, J. Shu, S. Mutas, K. Hempel, J. Schaeffer, S. Ohsiek, and M. Lenski
GLOBALFOUNDRIES, Wilschdorfer Landstraße 101, 01109 Dresden, Germany
Topics: Short Poster Presentation p.75-79
16:35 – 16:40 Low thermal budget surface passivation of crystalline silicon by ALD Al2O3 E. Cianci, G. Seguini, C. Wiemer, M. Perego / D. S. Saynova, J.A.M. van Roosmalen
Laboratorio MDM, IMM-CNR, Via C. Olivetti 2, Agrate Brianza, Italy
16:40 – 16:45 Enhancement of Growth Rate in Rapid Atomic Layer Deposition by Oxygen
Plasma Joonrae Kim, Sanghyun Park, HyeongJoon Kim / Hajin Lim / Seok-Jun Won
Department of Materials Science and Engineering, and Inter-University Semiconductor
Research Center, Seoul National University, Seoul, 151-744, Korea
16:45 – 16:50 Low temperature HfO2 and Al2O3 single layer and multilayer structures A. Singh, U. Schröder, T. Mikolajick, C. Hoßbach, C. Hodson, Qi Fang
Namlab gGmbh, Nöthnitzerstr 64, Dresden, 01187 Germany / IHM Mierdel-Bau,TU
Dresden, Nöthnitzerstr 64, Dresden, 01187 Germany
19
Oral Session VI – Conference Hall 3 Topics: Functional Materials I (Session Chair: K. Nielsch) p.80-83
15:30 – 15:45 Elaboration of functional carbon based heterostructures by controlled surface
functionalization and metal oxide ALD.
C. Marichy, N. Pinna, K.H. Lee, M.G. Willinger, J.-P. Tessonnier, S. Cavaliere, G. Neri
World Class University (WCU) program of Chemical Convergence for Energy and Environment (C2E2),
School of Chemical and Biological Engineering, College of Engineering, Seoul National University
(SNU), Seoul, 151-744, Korea
15:45 – 16:00 Patterning of ALD Coatings on Textiles William J. Sweet III, Christina K. Devine, Christopher J. Oldham, Gregory N. Parsons, Jesse S. Jur
Department of Chemical and Biomolecular Engineering / Department of Textile Engineering, Chemistry
and Science North Carolina State University, Raleigh, North Carolina, 27695, USA
16:00 – 16:15 Synthesis of noble metal core/shell nanoparticles by ALD M.J. Weber, A.J.M. Mackus,
W.M.M. Kessels, M.A. Verheijen / C. van der Marel
Department of Applied Physics, Eindhoven University of Technology, The Netherlands /
16:15 – 16:30 Atomic layer deposition of W:Al2O3 nanocomposites with tunable resistivity
Anil U. Mane and Jeffrey W. Elam
Argonne National Laboratory, Argonne, Illinois 60439, USA
Topics: Short Poster Presentation p. 84-89
16:30 – 16:35 High-k Gate Dielectrics for III-N MIS-HEMTs T.J. Anderson, D.J. Meyer, M.A. Mastro, J.K. Hite, K.D. Hobart, F.J. Kub, C.R. Eddy, Jr.
/ N. Nepal,
U.S. Naval Research Laboratory,Electronics Science & Technology Division, Washington, DC 20375 /
American Society for Engineering Education, Washington DC, 20036
16:35 – 16:40 Atomic layer deposition of high-k dielectrics for flash memories
Nikolaos Nikolaou, Panagiotis Dimitrakis, Pascal Normand, Vassilios Ioannou-Sougleridis, Konstantinos Giannakopoulos, Konstantina Mergia, Jaakko Niinistö, Mikko Ritala, Markku Leskelä,
Kaupo Kukli
Department of Chemistry, University of Helsinki, FI-00014 Helsinki, Finland
16:40 – 16:45 Adhesion Performance and Tribological Properties of Atomic Layer Deposited Aluminum Oxide Films
Helena Ronkainen, Lauri Kilpi, Antti Vaajoki, Simo Varjus, Oili M. E. Ylivaara and Riikka L. Puurunen
VTT Technical Research Centre of Finland, Metallimiehenkuja 8, FI-02044 Espoo, Finland
16:45 – 16:50 Characterization of ALD TaN for gate last high-k metal gate integration D.H. Triyoso, K. Hempel, E. Erben, K. Dittmar, M. Weisheit, R. Binder, J. Metzger, and A. Wei
GLOBALFOUNDRIES, Wilschdorfer Landstraße 101, 01109 Dresden, Germany
16:50 – 16:55 Monitoring Pentakis(dimethylamido) Tantalum Delivery for TaN ALD J.E. Maslar, W.A. Kimes, B.A. Sperling, J. Hoang / P.F. Ma, J. Anthis, J.R. Bakke, R. Kanjolia
National Institute of Standards and Technology, Gaithersburg, MD, USA
16:55 – 17:00 ALD-deposited TiO2 Thin Film Transistor Feyza Bozkurt, Furkan Çimen, Ali Kemal Okyay, Mohammad Ghaffari
Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800, Turkey
20
Tuesday, June 19th
Oral Session VII – Conference Hall 2 Topics: Solar/Transparent Conducting Oxides I (Session Chair: E. Kessels) p.93-97
08:30 – 09:00 Nanoscale Architectures Fabricated by Atomic Layer Deposition and Conformal
Coating of Nanotemplates for Solar Energy Conversion (Invited) Hyunjung Shin
School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Korea
09:00 – 09:15 ALD of transition metal doped ZnO films for transparent electrode Do-Joong Lee, Ki-Ju Kim, Ki-Bum Kim / Jimmy Xu / Jang-Yeon Kwon / Soo-Hyun Kim
WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National
University, Seoul 151-742, Korea.
09:15 – 09:30 ALD-enabled tunneling and transparent conductive oxide layers for novel silicon
nanowire solar cells Minna Toivola, Satu Ek, Tero Pilvi, Juhana Kostamo, Sanna Arpiainen
Picosun Oy, Tietotie 3, FI-02150 Espoo, Finland
09:30 – 09:45 ALD for 3D Nanostructured Building Blocks: Urchin-Inspired Architectures for Solar
Cells Ivo Utke, Jamil Elias, Johann Michler, Laetitia Philippe, Mikhael Bechelany
EMPA – Swiss Federal Laboratories of Materials Science & Technology, Laboratory for Mechanics of
Materials and Nanostructures, Thun, Switzerland
09:45 – 10:00 High deposition rate (~ nm/s) of TCOs for solar and electronic devices by Spatial
ALD A. Illiberi, P. Poodt, F. Roozeboom
Netherlands Organization for Applied Scientific Research (TNO), PO Box 6235,5600 HE Eindhoven,
The Netherlands
Oral Session VIII– Conference Hall 3 Topics: Characterization II (Session Chair: J. Kim) p.98-102
08:30 – 09:00 Surface Chemistry of Atomic Layer Deposition Processes (Invited) Francisco Zaera
Department of Chemistry, University of California, Riverside, California 92521, USA
09:00 – 09:15 Interface oxide evolution on InP(100) during atomic layer deposition of Al2O3 studied
by in-situ infrared spectroscopy W. Cabrera, B. Brennan, H. Dong, R.M. Wallace, Y. J. Chabal, I. M.Povey
Department of Material Science and Engineering, The University of Texas at Dallas Richardson, TX,
U.S.A.
09:15 – 09:30 In-situ analysis of Al2O3 ALD growth on PET and PEN substrates for flexible organic
electronics
Marion Geidel, Christoph Hossbach, Martin Knaut, Matthias Albert and Johann W. Bartha
TU Dresden, Institute of Semiconductors
09:30 – 09:45 In situ reaction mechanism studies on ALD of mixed silicon aluminium oxides from
trimethylaluminium, hexakis ethylaminodisilane and Water Yoann Tomczak, Kjell Knapas, Marianna Kemell, Mikko Heikkilä, Markku Leskelä, Mikko Ritala, Suvi
Haukka, Marcel Ceccato
Laboratory of Inorganic Chemistry, University of Helsinki, P.O.Box 55 FIN-00014 University of
Helsinki, Finland
21
09:45 – 10:00 Surface chemistry and film morphology of tin oxide thin films grown by chemical
vapor deposition Gilbère J. A. Mannie, Hans (J. W.) Niemantsverdriet, Peter C. Thüne, Joop van Deelen
Materials innovation institute (M2i), P.O. Box 5008, 2600 GA Delft, The Netherlands
Oral Session IX – Conference Hall 2 Topics: High k Metal Gate/Dielectric (Session Chair: A. Delabie) p.103-107
10:30 – 11:00 ALD Process Applications of Advanced Logic Technology (Invited) Nae-In Lee, H. S. Jung, H. S. Son, J. H. Park, S. J. Won, D. S. Shin, W. H. Kim, K. H. Kim, Y. B. Kim,
Willie Choi, W. J. Jang, H. J. Shin, M. Y. Liu, J. H. Lee
TD Team, System LSI Business, Samsung Electronics, San #24 Nongseo-Dong, Giheung-Gu, Yongin-
City, Gyeonggi-Do 446-711 Korea
11:00 – 11:15 ALD high-k surface pre-treatment and sequence tuning for reliability improvement in
28nm CMOS devices E. Erben, M. Trentzsch, R. Carter, D.H. Triyoso, K. Dittmar, S. Ohsiek, C. Grass, R. Agaiby, Y-Y. Lin /
A. Naumann, J. Sundqvist
GLOBALFOUNDRIES, Wilschdorfer Landstraße 101, 01109 Dresden, Germany
11:15 – 11:30 Critical Challenges in the Atomic Layer Deposition of Highly Electropositive Metals
in Semiconductor Fabrication Scott. B. Clendenning , Patricio E. Romero / Michael McSwiney / Harsono S. Simka, Atashi B.
Mukhopadhyay, and Sadasivan Shankar
Components Research, Intel Corporation, Hillsboro, Oregon, USA 97124
11:30 – 11:45 ALD of Dy2O3 and Er2O3 Thin Films: A Study on the ALD Characteristics, Structural
and Eectrical Properties
Ke Xu, Harish Parala, Anjana Devi / Ramdurai Ranjith, Apurba Laha, Eberhard Bugiel, Hans-Jörg
Osten Inorganic Materials
Chemistry, Ruhr-University Bochum, 44780 Bochum, Germany
11:45 – 12:00 HfO2 / SiO2 Composite-layer One-Time Programmable Memory Cell Prepared by
Atomic Layer Deposition Xi Lin, Wei Wang, Xiao-Yong Liu, Peng-Fei Wang, Qing-Qing Sun, and David Wei Zhang
State Key Laboratory of ASIC and System, Dept. of Microelectronics, Fudan University, Shanghai,
200433 China
Oral Session X – Conference Hall 3 Topics: Functional Materials II (Session Chair: N. Pinna) p. 108-112
10:30 – 11:00 Nanoparticles by ALD: From Nucleation Mechanisms to Applications in
Quantum Dot Solar Cells (Invited) Stacey F. Bent, Han-Bo-Ram Lee, Marja Mullings, Bruce Clemens, Thomas P. Brennan, Pendar
Ardalan, Jonathan R. Bakke, I-Kang Ding, Michael D. McGehee Departments of Chemical Engineering and Materials Science and Engineering, Stanford University,
Stanford, CA 94305 USA
11:00 – 11:15 Atomic Layer Deposition of Cobalt Ferrites films for Magneto-Plasmonic Core-Shell
Nanowires J.M. Montero-Morenoa, M. Waleczek, D. Görlitza, K. Nielsch, G. Armelles, A. Cebollada, A. García-
Martín
Institut für Angewandte Physik, Universität Hamburg Jungiusstr. 11, 20355 Hamburg, Germany
22
11:15 – 11:30 Thermoelectric Characterizations of ALD grown Sb2Te3 Films Sebastian Zastrow, Johannes Gooth*, Tim Böhnert, Kornelius Nielsch, Stefan Heimann, Stephan
Schulz,
University of Hamburg, Institute of Applied Physics, Germany
11:30 – 11:45 Atomic Layer Deposited TiO2 Nanotubes and Thin Films for Biosensor Applications Mingun Lee, Antonio Lucero, Jie Huang, Moon.J Kim and Jiyoung Kim
Department of Material Science and Engineering, The University of Texas at Dallas, Richardson, TX,
USA
11:45 – 12:00 Porous TiO2 nanotubes with controlled pore size by molecular layer deposition Yong Qin, Mato Knez
Institute of Coal Chemistry, Chinese Academy of Sciences, 030001,Taiyuan, P.R.China
Oral Session XI – Conference Hall 2 Topics: Solar/ Transparent Conducting Oxides II (Session Chair: J. Elam) p.113-117
13:30 – 14:00 ALD for solar cells (Invited)
Jan Benick
Fraunhofer ISE Freiburg
14:00 – 14:15 Selective ALD of SiO2 on Dye-Sensitized Solar Cells
Roy G. Gordon, Xinwei Wang / Ho-Jin Son, Chaiya Prasittichai, Joseph T. Hupp
Department of Chemistry and Chemical Biology, Harvard University, Cambridge, MA
14:15 – 14:30 Atomic layer deposition of transparent conducting oxide substrates for CdTe based
photovoltaics Paul R. Chalker, Paul A. Marshall, Simon Romani / Stuart J C Irvine, Daniel A. Lamb, Andrew J.
Clayton / Paul A. Williams
Centre for Materials & Structures, University of Liverpool, Liverpool, L69 3GH, UK
14:30 – 14:45 ALD developments in the Zn(O,S) buffer layer for CIGS solar cells Steven Christensen, Jonathan Mann / Stephen Glynn, Jian Li, Rommel Noufi, Kannan Ramanathan,
Arrelaine Dameron
National Center for Photovoltaics National Renewable Energy Laboratory, Golden, Colorado 80401,
USA
14:45 – 15:00 Growth, characterization and performance of amorphous Zn1-x Snx Oy thin films by
atomic layer deposition for CuIn1-x Gax Se2 solar cells Tobias Törndahl, Johan Lindahl, Adam Hultqvist, Jörn Timo Wätjen and Marika Edoff
Ångström Solar Center, Solid State Electronics, Uppsala University, Box 534, SE-75121 Uppsala,
Sweden
Oral Session XII– Conference Hall 3 Topics: Nucleation & Growth control (Session Chair: M. Ritala) p.118-123
13:30 – 13:45 Controlling the growth morphology of ALD copper oxide on CNTs
by thermal oxidation prior to the ALD
Marcel Melzer , Anja Foerster , Thomas Waechtler, Christian Wagner , Holger Fiedler, Jörg Schuster ,
Sascha Hermann, Stefan E. Schulz, Thomas Gessner
Fraunhofer Institute for Electronic Nano Systems (ENAS), D-09126 Chemnitz, Germany
13:45 – 14:00 An Approach to Radical Enhanced ALD Without Plasma: Impact of Atomic
Hydrogen on Thermal ALD Processes H. Van Bui, A. A. I. Aarnink, A. Y. Kovalgin* and R. A. M. Wolters
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, the
Netherlands
23
14:00 – 14:15 Reactions Mechanisms in Al2O3 Atomic Layer Deposition studied by Density
Functional Theory A. Delabie, G. Pourtois, S. Sioncke, S. Van Elshocht, K. Pierloot
imec, Kapeldreef 75, B-3001 Leuven, Belgium / University of Leuven, Department of Chemistry,
Celestijnenlaan 200F, B-3001 Leuven,Belgium
14:15 – 14:30 On the kinetics of spatial atomic layer deposition reactions Paul Poodt, Andrea Illiberi, Raymond Knaapen, Mireille Smets, Fred Roozeboom, Almie
van Asten
TNO, PO Box 6235, 5600HE Eindhoven, The Netherlands
14:30 – 14:45 On the role of ions during plasma-assisted ALD H. B. Profijt, M. C. M. van de Sanden, and W. M. M. Kessels
Eindhoven University of Technology, Eindhoven, The Netherlands
14:45 – 15:00 On the mechanism of zinc oxide ALD using diethylzinc and ozone Wayne L. Gladfelter, Ellis Warner, Stephen A. Campbell and Christopher J. Cramer
Departments of Chemistry and Electrical and Computer Engineering, University of
Minnesota, Minneapolis, USA
Oral Session XIII – Conference Hall 2 Topics: Emerging Applications (Session Chair: A. Londergan) p.124-128
15:30 – 16:00 Enabling High Performance Detectors and Optics for Astronomy and Planetary
Exploration with ALD (Invited) Frank Greer, Erika Hamden, Michael C. Lee, Matthew Beasley, David Schiminovich, Peter Day, Rick
Leduc, Shouleh Nikzad
Jet Propulsion Laboratory/California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA
91109 U.S.A
16:00 – 16:15 Atomic Layer Deposition of Optical Coatings for Guided Mode Resonance Gratings A. Szeghalmi, H. Yang, E.-B. Kley, M. Knez, A. Tünnermann
Institut für Angewandte Physik, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena, Max-
Wien-Platz 1, 07743 Jena
16:15 – 16:30 Efficient SERS substrates by combining PEALD silver with electrospun fibers Eero Santala, Maarit Kariniemi, Timo Hatanpää, Jaakko Niinistö, Markku Leskelä, Mikko Ritala, Orest
J. Glembocki, Sharka M. Prokes
Department of Chemistry, University of Helsinki
16:30 – 16:45 Deposition of a self-assembled monolayer using a molecular layer deposition (MLD)
technique for pore sealing application James Connolly, Paul Ma, Jeff Bielefeld
Applied Materials, Santa Clara, CA, USA / Intel Corporation, Portland, OR, USA
Topics: Short Poster Presentation p.129-131
16:45 – 16:50 Metamaterial properties of silver films deposited by ALD E. Cleveland, O.J. Glembocki, S.M. Prokes, R.W Rendell, Edward Foos
Naval Research Lab, Washington DC 20375
16:50 – 16:55 Atomic Layer Deposition as a Tool for Accelerated Materials Development Monika M. Biener, J. Biener, T.F. Baumann, A. V. Hamza
Nanoscale Synthesis and Characterization Laboratory, Lawrence Livermore National Laboratory
(LLNL), Livermore, CA 94550, USA
24
16:55 – 17:00 Modifying nanostructured biological surfaces: tailoring the superhydrophobic and
photocatalytic properties of lotus leaf/TiO2 composites Imre Miklós Szilágy, Emma Härkönen; Elina Färm; Timo Hatanpää; Timur Nikitin, Leonid Khriachtchev,
Markku Räsänen, Mikko Ritala, Markku Leskelä, Georg Teucher
Technical Analytical Chemistry Research Group of the Hungarian Academy of Sciences, Department of
Inorganic and Analytical Chemistry, Budapest University of Technology and Economics, Budapest, Szt.
Gellért tér. 4., H-1111, Hungary
Oral Session XIV– Conference Hall 2
Topics: MLD (Session Chair: O. Nilsen) p.133-135
15:30 – 16:00 Synergic Combinations of Organic and Inorganic Nanolayers Using Molecular
Layer Deposition with Atomic Layer Deposition (Invited) Myung Mo Sung
Department of Chemistry, Hanyang University
16:00 – 16:15 Water Vapor Transmission Rates and Critical Tensile Strains for Alloy Films Grown
Using Al2O3 ALD & Alucone MLD Shih-Hui Jen, Byoung H. Lee, Steven M. George, Robert S. McLean and Peter F. Carcia
Department of Chemistry and Biochemistry
16:15 – 16:30 Highly fluorescent monolayers of Alq3 prepared by molecular layer deposition A. Räupke, D. Theirich, T. Riedl, F. Albrecht, H.-H. Johannes, W. Kowalsky
Institute of Electronic Devices, University of Wuppertal, Germany
Topics: Short Poster Presentation ..p.136-141
16:30 – 16:35 Modeling ALD surface reaction and process dynamics using absolute reaction rate
theory Raymond A. Adomaitis and Crutch D. Travis
Department of Chemical and Biomolecular Engineering Institute for Systems Research,
University of Maryland, College Park, MD 20742 USA
16:35 – 16:40 The Initial Growth of Tantalum Nitride ALD: A Comparative Quantum Chemical and
In Situ Experimental Study
Christoph Hossbach, Daniela Seiffert, Steffen Strehle, Marcel Junige, Matthias Albert,
Johann W. Bartha, Markus Drees TU
Dresden, Institute of Semiconductors and Microsystems, 01187 Dresden, Germany
16:40 – 16:45 Atomic Layer Epitaxy of InN Films N. Nepal,, N. Mahadik, J. K. Hite, M. A. Mastro, C. R. Eddy, JR, M. Currie, S. Gamage, I. Senevirathna
Electronics Science & Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375,
USA
16:45 – 16:50 New insights on the ALD of multinary oxide and sulfide thin films
Pascal Genevée, Frederique Donsanti, Gilles Renou, Daniel Lincot
Institut de Recherche et Développement sur l’Energie Photovoltaïque (IRDEP) UMR 7174
EDF – CNRS – Chimie ParisTech, 6, Quai Watier, 78401, Chatou, France
16:50 – 16:55 Atomic Layer Deposition Study of Cobalt Silicide Films by In-situ Infrared
Spectroscopy Karla Bernal Ramos, Jinhee Kwon, Yves J. Chabal / Mark J. Saly, Ravindra K. Kanjolia / Mathew D.
Halls
Department of Materials Science & Engineering, University of Texas at Dallas, Richardson, TX 75080,
USA / SAFC Hitech, Haverhill, Massachusetts 01832, USA
25
16:55 – 17:00 Plasma-enhanced atomic layer deposition of gallium oxide and indium gallium
oxide (IGO) thin films Inci Donmez, Cagla Ozgit-Akgun, Necmi Biyikli
UNAM - Institute of Materials Science and Nanotechnology, Ihsan Dogramaci Bilkent University,
Ankara 06800, Turkey
Wednesday, June 20th
Oral Session XV – Conference Hall 2
Topics: Memory (Session Chair: C.S. Hwang) p.145-149
08:30 – 09:00 Enabling Resistive RAM for Next Generation Memory through ALD Processes
(Invited) B. Govoreanu, G.S. Kar, L. Goux, Y-Y. Chen,, A. Fantini, I.P. Radu, C. Adelmann, A. Delabie, S.
Clima, R. Degraeve, O. Richard, D.J. Wouters, L. Altimime, M. Jurczak
imec, Kapeldreef 75, B-3001 Leuven, Belgium, also with ESAT/KU Leuven, Kasteelpark Arenberg 10,
B-3001 Leuven, Belgium
09:00 – 09:15 In-Situ Control of Oxygen Vacancy Concentration by ALD for Resistive Switching
Devices Woo Lee , Sang-Joon Park, Byung Youn You, Jeong-Pyo Lee, Jong Shik Jang, Hyun Rhu, Chang Soo
Kim, Yong-Jai Cho, Kyung Joong Kim, Byungsung, Hyunung Yu, Sang-Wook Han, Sunggi Baik
Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Korea
09:15 – 09:30 Deposition and Electrical Characterization of ALD GexSbyTez for Future Applications
of Phase Change Memory Devices L.Yang, U.Weber, P.K.Baumann / Z.Karim, S.Ramanathan, B.Lu / W. Czubatyj, S. Hudgens, T. Lowery
Aixtron SE, Kaiserstrasse 98, 52134 Herzogenrath, Germany / Ovonyx Inc, 1000 John R Road, Ste
105, Troy, MI 48083, USA
09:30 – 09:45 Scalability of ALD strontium titanate films for 3X DRAM MIM capacitors Mihaela Popovici, Johan Swerts, Kazuyuki Tomida, Min-Soo Kim, Annelies Delabie, Johan
Meersschaut, Alexis Franquet, Ben Kaczer, Malgorzata Jurczak, Sven Van Elshocht
imec, Kapeldreef 75, 3001-Leuven, Belgium
09:45 – 10:00 Atomic layer deposition of metal silicates as scalable high-k metalinsulator-metal
capacitors with low leakage, high-breakdown fields and improved voltage linearity. Ian M. Povey and Scott Monaghan
Tyndall National Institute, University College Cork,Lee Maltings, Cork, Ireland
Oral Session XVI– Conference Hall 3 Topics: Reactor/Roll to Roll (Session Chair: G. Sundaram) p.150-154
08:30 – 09:00 Leading Edge Atomic Layer Deposition Applications and Equipment for
Semiconductor Manufacturing (Invited) Paul Ma, Schubert S. Chu, Mei Chang, Vicky Nguyen, Atif Noori, Maitreyee Mahajani, Srinivas
Gandikota, and Joseph Yudovsky
Applied Materials, 974 E. Arques Avenue, Sunnyvale, CA 94085, USA
09:00 – 09:15 Atmospheric-pressure ALD for production of nanostructured particles J. Ruud van Ommen
Delft University of Technology, ChemE, Julianalaan 136, 2628 BL Delft, the Netherlands
09:15 – 09:30 Model-based Optimization of Cross-Flow ALD Rectors
Anders Holmqvist, Stig Stenström
Department of Chemical Engineering, Lund University, Lund, SE-221 00, Sweden
26
09:30 – 09:45 Deposition of Al2O3 Films by Spatially Separated Atomic Layer Deposition with a
Large Gap Distance Sungin Suh, Sanghyun Park, Hajin Lim, Yu-Jin Choi , Hyeong Joon Kim / Seok-Jun Won,
Department of Materials Science and Engineering, and Inter-University Semiconductor Research
Center, Seoul National University, Seoul, 151-744, Korea / Technology
09:45 – 10:00 Atmospheric Spatial ALD in Roll-to-Roll Processes Raymond Knaapen, Paul Poodt, Ruud Olieslagers, Adriaan Lankhorst, Matijs van den Boer, Dennis
van den Berg, Almie van Asten / Fred Roozeboom
TNO, PO Box 6235, 5600 HE Eindhoven, The Netherlands
Oral Session XVII – Conference Hall 2 Topics: Energy Storage (Session Chair: M. Leskelä) p.155-159
10:30 – 10:45 Reduction of Leakage Current in Supercapacitors by Atomic Layer Deposition of a
Blocking Layer on the Electrodes 1
Jing Wang,Tete Tevi, Paula Algarin, Arash Takshi, Sylvia Thomas / Adrien LaVoie
Department of Electrical Engineering, University of South Florida, Tampa FL 33620, U.S.A.
10:45 – 11:00 Atomic Layer Deposition of LixTiyOz Films 1 Ville Miikkulainen, Ola Nilsen, Helmer Fjellvåg / Mikko Laitinen, Timo Sajavaara
Centre for Materials Science and Nanotechnology (SMN), Department of Chemistry, University of Oslo,
P.O. Box 1126 Blindern, NO-0318 Oslo, Norway
11:00 –11:15 Atomic-layer-deposition synthesis of energy nanomaterials and their applications in
lithium-ion batteries Jian Liu, Xifei Li, Xiangbo Meng, Yuhai Hu, Dongsheng Geng, Ruying Li, Xueliang Sun
Nano+Energy@Western Group, Department of Mechanical & Materials Engineering
University of Western Ontario, London, ON N6A 5B9, Canada
11:15 – 11:30 Atomic Layer Deposition of RuO2 for Energy Storage Applications
Keith Gregorczyk, Xinyi Chen, Gary W. Rubloff
Department of Material Science and Engineering & Institute for Systems Research, University of
Maryland, College Park, MD, 20742, USA
11:30 – 11:45 Electrochemical Supercapacitors Fabricated Using TiO2 ALD on Graphene and
Carbon Nanotubes
Xiang Sun, Gongkai Wang, Hongtao Sun, Jie Lian / Ming Xie, Matthias J. Young, Jonathan J. Travis, Andrew S. Cavanagh, Steven M. George
Dept. of Mechanical, Aerospace & Nuclear Engineering, Rensselaer Polytechnic Institute, New York
12180
11:45 – 12:00 ALD V2O5 as active electrochemical material in energy storage nanostructures Liangbing Hu, Xinyi Chen, Gary W. Rubloff, Keith Gregorczyk
Department of Materials Science & Engineering, University of Maryland, College Park, MD 20742, USA
Oral Session XVIII – Conference Hall 3
Topics: Epitaxy and Doping (Session Chair: C. Winter) p.160-164
10:30 – 11:00 Epitaxial growth of oxide thin films by atomic layer deposition (Invited) Jaan Aarik, Hugo Mändar, Aivar Tarre, Teet Uustare
Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia
11:00 – 11:15 Growth of epitaxial oxide films on silicon substrates using ALD: Case study of TiO2,
SrTiO3, and LaAlO3 on SrTiO3-buffered Si(001) Martin D. McDaniel, Thong Q. Ngo, John G. Ekerdt, Agham Posadas, Alex A. Demkov
University of Texas at Austin, Department of Chemical Engineering, Austin, TX 78712, USA
27
11:15 – 11:30 Deposition and X-ray Characterization of Epitaxial Thin Films of LaAlO3 Sønsteby, H, Østreng, E, Nilsen, O, Fjellvåg, H. University of Oslo, Centre for Materials Science and Nanotechnology, Norway
11:30 – 11:45 Structural properties of as deposited and annealed ZrO2 influenced by ALD,
substrate, and doping W. Weinreich, L. Wilde, J. Müller; E. Erben; J. Heitmann; M. Lemberger¸ A. J. Bauer
Fraunhofer Center Nanoeletronic Technologies, Dresden, Germany / Globalfoundries, Dresden,
Germany
11:45 – 12:00 Atomic layer deposition of oxide layers as dopant source for ultra-shallow doping of
silicon Bodo Kalkofen, Max Klingsporn, Edmund P. Burte, Marco Lisker,
IMOS, University of Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
Oral Session XIX– Conference Hall 2 Topics: Precursor (Session Chair: R. Kanjolia) p.165-169 13:30 – 14:00 Metal Chalcogenide Precursors at KRICT (Invited) Chang Gyoun Kim, Taek-Mo Chung, Ki-Seok An, Sun Sook Lee, and Bo Keun Park
Advanced Materials Division, Korea Research Institute of Chemical Technolgy Yuseong P.O.Box 107,
Daejeon 305-600, Republic of Korea
14:00 – 14:15 Atomic Layer Deposition of SrO and SrTiO3 Using Novel Sr Imidazolate Precurs M. S. Kim, S.H. Yang, Sergei Ivanov, John A. T. Norman, Iain Buchanan Air Products and Chemicals, 7201 Hamilton Blvd, Allentown, PA 18195
14:15 – 14:30 Elementary reaction analyses on NH2 radicals in gas phase for Cobalt thin film
deposition by hot wire assisted ALD (HW-ALD) Hideharu SHIMIZU, Takeshi MOMOSE, and Yukihiro SHIMOGAKI
The University of Tokyo
14:30 – 14:45 Novel nitride processes, Li3N and Mo2N by ALD Erik Østreng, Ponniah Vajeeston, Ola Nilsen, Helmer Fjellvåg
University of Oslo, Norway
14:45 – 15:00 Non-Pyrophoric Al Precursor for the ALD of Al2O3 and Al-Doped ZnO
S. E. Potts, P. M. Hermkens, D. García-Alonso, W. M. M. Kessels, C. Lachaud
Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The
Netherlands
Oral Session XX – Conference Hall 3 Topics: Nucleation & Growth - Metal (Session Chair: S. Elliott) p.170-175
13:30 – 13:45 Low Temperature ALD of Noble Metals Using Ozone and Molecular Hydrogen as
Reactants Jani Hämäläinen, Esa Puukilainen, Mikko Ritala, Markku Leskelä, Timo Sajavaara
Department of Chemistry, P.O. Box 55, FI-00014 University of Helsinki, Finland
13:45 – 14:00 Comparison of three processes for plasma-enhanced ALD of platinum D. Longrie, K. Devloo-Casier, C. Detavernier, S. Van den Berghe, K. Driesen
Department of Solid State Sciences, Ghent University Ghent, Belgium
14:00 – 14:15 Nucleation of 1-D Pt Nanowires by Atomic Layer Deposition on Highly Oriented
Pyrolitic Graphite Han-Bo-Ram Lee, Jong Suk Yoo, and Stacey F. Bent
Department of Chemical Engineering, Stanford University, Stanford, CA94305, USA
28
14:15 – 14:30 Dehydrogenation reactions and catalytic combustion during Ru ALD N. Leick, A.J.M. Mackus, W.M.M. Kessels, S. Agarwal,
Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
14:30 – 14:45 Atomic layer deposition of (GeTe2)1-x(Sb2Te3)x pseudo-binary layers for phase
change memories Cheol Seong Hwang, Taeyong Eom, Taehong Gwon, Si Jeong Yoo / Moo-Sung Kim / Manchao Xiao,
Iain Buchanan
Department of Materials Science & Engineering and Inter-university Semiconductor Research Center,
Seoul National University, Seoul 151-744, Korea / Air Products Korea, 15 Nongseo-dong, Giheung-gu,
Yongin-si, Gyeonggi-do, 446-920, Republic of Korea / Air Products and Chemicals, Inc., 1969 Palomar
Oaks Way, Carlsbad, CA 92011, USA
14:45 – 15:00 Improved Ru ALD Process with Deactivation Step Ronald F. Spohn, John D. Peck
Praxair, Inc., 175 East Park Dr., Tonawanda, NY, USA
Oral Session XXI – Conference Hall 2 Topics: Catalysis (Session Chair: P. Ma) p.176-180
15:30 – 15:45 Fabrication of Pt-ZnO catalysts by UV-assisted atomic layer deposition
for electro-oxidation of methanol Chung-Yi Su, Yang-Chih Hsueh, Chi-Chung Kei, Chun-Ting Lin, Tsong-Pyng Perng
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
15:45 – 16:00 Synthesis of Nanostructured Catalysts by Atomic Layer Deposition Junling Lu, Yu Lei, Joseph A. Libera, Jeffrey W. Elam
Argonne National Laboratory, Argonne, Illinois 60439, USA
16:00 – 16:15 Atomic layer deposition of platinum on tungsten oxide as a novel PEM cathode
catalyst Katherine E. Hurst, Anne C. Dillon, Steven T. Christensen, Arrelaine A. Dameron, Shyam S. Kocha,
K.C. Neyerlin, Jason Zack, John Turner, Steven M. George, Virginia R. Anderson National
Renewable Energy Laboratory Golden, CO 80401
16:15 – 16:30 Systematic catalytic current enhancement for the oxidation of water at
nanostructured iron (III) oxide electrodes Julien Bachmann, Julia Gemmer, Yvonne Hinrichsen, Annik Abel
Physics Department, Chemistry Department, and Interdisciplinary Nanoscience Center Hamburg,
University of Hamburg, Sedanstrasse 19, D–20146 Hamburg, Germany
16:30 – 16:45 Nanostructured Materials for PhotoelectrochemicalWater Splitting by ALD
Qing Peng, Jeffrey T. Glass, Paul Hoertz, Berç Kalanyan, Gregory N. Parsons, Jie Liu
Electrical and Computer Engineering and 4Chemistry Departments, Duke University, Durham, NC, 27708 / Research Triangle Institute, NC, 27709
Oral Session XXII– Conference Hall 3 Nucleation & Growth – Compounds (Session Chair: S. Ramanathan) p.181-186
15:30 – 15:45 Nucleation and Growth of Atomic Layer Deposition of PtOx Using (MeCp)PtMe3 and
O2 Plasma I.J.M. Erkens, A.J.M. Mackus, H.C.M. Knoops, H.H. Brongersma, M.A. Verheijen, F.
Roozeboom and W.M.M. Kessels
Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
29
15:45 – 16:00 Atomic layer deposition of Bi2Te3
Tiina Sarnet, Timo Hatanpää, Mikko Ritala, Markku Leskelä
Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, Finland
16:00 – 16:15 Atomic layer deposition of bismuth ferrite Manjunath Puttaswamy,, Mikko Ritala, Markku Leskelä, Kaupo Kukli, Marko Vehkamäki,, Kemell, Timo
Hatanpää, Mikko Heikkilä/ Mukesh Chandra, Marianna, Aile Tamm / Dimri, Raivo Stern / Marcel
Ceccato
University of Helsinki, Department of Chemistry, P.O.Box 55, FI-00014, Helsinki, Finland
16:15 – 16:30 Atomic layer deposition of a-Fe2O3 using FeCl3 and H2O Jeffrey A. Klug, Nicholas G. Becker, Shannon C. Riha, Alex B. F. Martinson, Jeffrey W. Elam,
Michael J. Pellin, and Thomas Proslier
Argonne National Laboratory, Argonne, Illinois 60439, USA
16:30 – 16:45 Optimization of the annealing conditions for thin VO2 ALD films Geert Rampelberg, Davy Deduytsche, Bob De Schutter, Christophe Detavernier, Marc Schaekers,
Koen Martens, Jorge Kittl
Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent, Belgium
16:45 – 17:00 Deuterium uptake during heavy water ALD half reaction of transparent
conductive oxide nanolaminates Al2O3/ZnO Ivo Utke, James Whitby, Deborah Alberts, Jeanne Baudot, Johann Michler, Max Döbeli
EMPA – Swiss Federal Laboratories of Materials Science & Technology, Laboratory for Mechanics of
Materials and Nanostructures, Thun, Switzerland